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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH28N60E-T1-GE3

Name: SIHH28N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH28N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH28N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH28N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 29A PPAK 8 X 8

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Product details

Overview

SIHH28N60E-T1-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, ultra-low gate charge (86–129 nC), and 0.085 Ω R_DS(on) at 10 V_GS, designed for high-efficiency hard-switched and resonant power converters in server PSUs and solar inverters.

For engineers reviewing the SIHH28N60E-T1-GE3 datasheet, SIHH28N60E-T1-GE3 pinout, SIHH28N60E-T1-GE3 application, or SIHH28N60E-T1-GE3 equivalent, key selection criteria include avalanche-rated ruggedness (353 mJ E_AS), low C_iss (2614 pF), Kelvin-source noise immunity, and thermal resistance R_thJC of 0.48 °C/W - critical for high-power density SMPS and PFC stages.

Technical Context

This device employs a trench-gated superjunction structure optimized for high-voltage switching with minimized figure-of-merit (R_DS(on) × Q_g). Its Kelvin source terminal separates power and signal return paths to suppress gate oscillation under high dI/dt conditions, enabling stable operation in fast-switching topologies like LLC and phase-shifted full-bridge.

The MOSFET supports unclamped inductive switching (UIS) up to 353 mJ and features a body diode with trr = 386–772 ns and Q_rr = 6–12 μC at 25 °C, making it suitable for synchronous rectification and bidirectional energy transfer where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage in telecom and industrial PFC stages.
R_DS(on) typ	0.085 Ω @ 10 V_GS, 14 A - enables <1.7 W conduction loss at 29 A continuous drain current, reducing heatsink requirements.
Q_g max	129 nC - lowers gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) converters.
C_iss	2614 pF @ V_DS = 100 V - contributes to low capacitive switching losses and predictable turn-on timing in ZVS circuits.
E_AS	353 mJ - provides robustness against inductive load transients without external snubbers in motor drives and welding inverters.
R_thJC	0.48 °C/W - enables >150 W power dissipation with ≤75 °C case-to-junction rise, supporting compact thermal design in enclosed power modules.
V_GS(th)	2.0–4.0 V - ensures reliable enhancement-mode turn-on with standard 10 V gate drivers while avoiding false triggering from noise.
trr / Q_rr	386–772 ns / 6–12 μC - defines body diode recovery behavior critical for minimizing shoot-through risk and EMI in half-bridge configurations.

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm × 1.0 mm), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad on bottom for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main control input; connects to gate driver output; requires low-inductance routing due to high dV/dt capability (70 V/ns).
Pin 2	Kelvin Source	Dedicated low-current source reference for gate driver feedback; isolates gate loop from high di/dt power return path to prevent oscillation.
Pin 3	Source	Main power return path for drain current; carries full load current (up to 29 A continuous); tied to PCB ground plane via multiple vias.
Pin 4	Drain	High-voltage power input/output node; connected to exposed copper pad on package underside for optimal thermal and electrical performance.

Key Features

Feature	Design Value
Kelvin source connection	Separates gate drive reference from high-current source return, eliminating gate ringing during 100+ A/μs switching events in PFC boost stages.
Avalanche energy rating (E_AS)	353 mJ single-pulse - eliminates need for external clamping circuits in inductive load switching applications such as battery charger flyback transformers.
Low R_DS(on) × Q_g FOM	~11.0 Ω·nC - balances conduction and switching losses for peak efficiency at 100–300 kHz in telecom rectifiers and solar microinverters.
Ultra-low C_iss and C_oss	2614 pF C_iss, 125 pF C_oss - reduces capacitive charging losses and improves light-load efficiency in resonant LLC converters.
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - meets environmental compliance requirements for global industrial and telecom equipment.
Body diode with controlled Q_rr	6–12 μC reverse recovery charge - enables predictable dead-time design in synchronous rectifier and bidirectional DC/DC topologies.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.5 kW front-end AC/DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, operating at 150 kHz with ZVS-assisted turn-on. Use Value: Kelvin source prevents gate oscillation during 80 A/μs di/dt transitions, while 0.085 Ω R_DS(on) limits conduction loss to <2.5 W at full load.	Use Scenario: DC-link switch in 5 kW string inverter H-bridge stage interfacing 600–1000 V PV array. IC Role / Device Role / Timing Role: Main power switch conducting bidirectional current during modulation, subjected to repetitive UIS stress during grid faults. Use Value: 353 mJ E_AS rating withstands unclamped inductive energy from transformer leakage during anti-islanding protection events.
Industrial Motor Drive	Telecom Rectifier
Use Scenario: Inverter leg switch in 7.5 kW servo drive with regenerative braking and active short-circuit protection. IC Role / Device Role / Timing Role: High-side and low-side switching device managing 29 A RMS phase current and 100 A peak regeneration pulses. Use Value: Low Q_gd/Q_g ratio (44/129 nC) ensures sharp Miller plateau transition, enabling precise dead-time control and minimizing shoot-through risk.	Use Scenario: Active clamp switch in 2 kW telecom rectifier with 380 V DC output and 96 % efficiency target. IC Role / Device Role / Timing Role: Clamp MOSFET absorbing transformer reset energy in forward converter, switching at 250 kHz with high dv/dt. Use Value: 70 V/ns dV/dt rating and low C_iss ensure stable gate control despite 1000 V/μs common-mode transients on primary side.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.5 kW front-end AC/DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, operating at 150 kHz with ZVS-assisted turn-on.

Use Value: Kelvin source prevents gate oscillation during 80 A/μs di/dt transitions, while 0.085 Ω R_DS(on) limits conduction loss to <2.5 W at full load.

Use Scenario: DC-link switch in 5 kW string inverter H-bridge stage interfacing 600–1000 V PV array.

IC Role / Device Role / Timing Role: Main power switch conducting bidirectional current during modulation, subjected to repetitive UIS stress during grid faults.

Use Value: 353 mJ E_AS rating withstands unclamped inductive energy from transformer leakage during anti-islanding protection events.

Industrial Motor Drive

Telecom Rectifier

Use Scenario: Inverter leg switch in 7.5 kW servo drive with regenerative braking and active short-circuit protection.

IC Role / Device Role / Timing Role: High-side and low-side switching device managing 29 A RMS phase current and 100 A peak regeneration pulses.

Use Value: Low Q_gd/Q_g ratio (44/129 nC) ensures sharp Miller plateau transition, enabling precise dead-time control and minimizing shoot-through risk.

Use Scenario: Active clamp switch in 2 kW telecom rectifier with 380 V DC output and 96 % efficiency target.

IC Role / Device Role / Timing Role: Clamp MOSFET absorbing transformer reset energy in forward converter, switching at 250 kHz with high dv/dt.

Use Value: 70 V/ns dV/dt rating and low C_iss ensure stable gate control despite 1000 V/μs common-mode transients on primary side.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 140 nC, TO-247 package, no Kelvin source	Higher current rating but larger footprint and no Kelvin source; higher gate drive loss due to +9 % Q_g	Preferred when board space permits and higher continuous current is required; not drop-in due to different package and pinout.
IXFH40N60X	600 V, 40 A, R_DS(on) = 0.075 Ω, Q_g = 115 nC, TO-247 package, standard 3-pin configuration	Lower R_DS(on) but lacks Kelvin source and has higher C_iss (3000 pF); unsuitable for ultra-low-noise gate drive layouts	Applicable where thermal margin exists and layout does not require Kelvin-source noise isolation; requires PCB redesign.

Compared with STW48N60M2 and IXFH40N60X, SIHH28N60E-T1-GE3 delivers superior gate noise immunity and power density via its Kelvin-source PowerPAK® 8 × 8 package, while trading off some current rating for lower Q_g and tighter thermal resistance - ideal for space-constrained, high-frequency industrial and telecom power systems.

Availability

SIHH28N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for SIHH28N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.

The SIHH28N60E-T1-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered for high-voltage, high-frequency power conversion in demanding industrial, telecom, and renewable energy applications where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHH28N60E-T1-GE3 at 100 °C case temperature?

The SIHH28N60E-T1-GE3 supports 19 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® 8 × 8 package and must be validated against actual board-level thermal performance using R_thJC = 0.48 °C/W and ambient conditions. The SIHH28N60E-T1-GE3 datasheet confirms this value under pulsed and linear derating conditions.

Does SIHH28N60E-T1-GE3 have a Kelvin source connection, and how is it implemented physically?

Yes, SIHH28N60E-T1-GE3 features a dedicated Kelvin source terminal (Pin 2) separate from the main source (Pin 3), implemented as an isolated bond wire internal to the PowerPAK® 8 × 8 package. This design decouples gate drive return from high-current source return, reducing gate loop inductance and suppressing oscillation during high dI/dt switching. The SIHH28N60E-T1-GE3 pinout diagram explicitly labels Pin 2 as "Kelvin connection" in the Product Summary section.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHH28N60E-T1-GE3, and why does it matter?

The SIHH28N60E-T1-GE3 body diode exhibits Q_rr = 6–12 μC at T_J = 25 °C, IS = 14 A, dI/dt = 100 A/μs, and V_R = 25 V. This parameter directly affects switching losses and EMI in half-bridge and synchronous rectifier topologies. Lower Q_rr reduces tail current and associated heat generation during commutation - a key advantage of the SIHH28N60E-T1-GE3 in high-frequency PFC and LLC designs.

Can SIHH28N60E-T1-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHH28N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 353 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 5 A). This ruggedness enables reliable operation in circuits with significant leakage inductance, such as flyback transformers and motor drive snubbers, without requiring external protection components. The SIHH28N60E-T1-GE3 datasheet specifies this in the Absolute Maximum Ratings table.

What is the gate-source threshold voltage range for SIHH28N60E-T1-GE3, and how does it affect drive compatibility?

The SIHH28N60E-T1-GE3 has a V_GS(th) range of 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA, confirming enhancement-mode operation compatible with standard 10 V gate drivers. This range ensures robust turn-on margin above logic-level thresholds while preventing accidental conduction from noise or leakage. The SIHH28N60E-T1-GE3 specification avoids the risk of partial turn-on seen in devices with wider or lower V_GS(th) spreads, improving system reliability in noisy industrial environments.

SIHH28N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 129 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2614 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 202W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH28N60E-T1-GE3 FAQ

1.How can I place an order for SIHH28N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH28N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH28N60E-T1-GE3 reliable?

The price and inventory of SIHH28N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH28N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH28N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH28N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH28N60E-T1-GE3?

SIHH28N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH28N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH28N60E-T1-GE3?

For technical support, including SIHH28N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH28N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH28N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH28N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH28N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH28N60E-T1-GE3?

All SIHH28N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH28N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH28N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH28N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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