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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHJ240N60E-T1-GE3

Name: SIHJ240N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHJ240N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHJ240N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIHJ240N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 12A PPAK SO-8

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Product details

Overview

SIHJ240N60E-T1-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel Power MOSFET in PowerPAK® SO-8L package, featuring R_DS(on) = 0.208 Ω (typ.) at V_GS = 10 V, Q_g = 15 nC (typ.), and E_AS = 81 mJ - optimized for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHJ240N60E-T1-GE3 datasheet, SIHJ240N60E-T1-GE3 pinout, SIHJ240N60E-T1-GE3 application, or SIHJ240N60E-T1-GE3 equivalent, key selection criteria include avalanche-rated ruggedness, low Co(er) = 32 pF for reduced switching loss, and thermal resistance R_thJC = 1.0 °C/W for high-power-density SMPS designs.

Technical Context

This 4th-generation E-series MOSFET employs trench-gate silicon technology to achieve low figure-of-merit (R_DS(on) × Q_g = 3.13 Ω·nC), enabling high-frequency operation up to 500 kHz in hard-switched topologies. Its optimized gate charge profile (Q_gs/Q_gd = 4/6 nC) supports clean turn-on with minimal Miller-induced oscillation.

The device integrates an intrinsic body diode with t_rr = 209 ns (typ.) and Q_rr = 2.1 μC (typ.) at T_J = 25 °C, supporting ZVS-capable PFC and resonant LLC designs. dv/dt immunity of 100 V/ns (T_J = 125 °C) ensures robust operation in noisy high-voltage bus environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for transient overvoltage in telecom/server PSUs
R_DS(on) typ.	0.208 Ω at V_GS = 10 V - enables ≤1.3 W conduction loss at 5.5 A continuous current
Q_g max	23 nC - determines gate drive power requirement and switching speed in 100–300 kHz PFC stages
E_AS	81 mJ - guarantees single-pulse unclamped inductive switching survival in motor drive or welder output stages
R_thJC max	1.4 °C/W - allows ≥70 W power dissipation with 100 °C case temperature rise, critical for compact heatsink layouts
C_o(er)	32 pF - reduces capacitive turn-off energy loss by >30 % vs. legacy 600 V MOSFETs with similar R_DS(on)
t_rr	209 ns typ. - minimizes diode recovery loss and EMI in continuous-conduction-mode boost PFC

Pinout & Package

Package: PowerPAK® SO-8L - surface-mount, dual-side thermal enhanced leadless package with exposed drain pad on bottom side for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; input capacitance C_iss = 783 pF limits high-frequency gate driver selection
D	Drain	Main high-side switching node; electrically connected to exposed copper pad for thermal and current path integrity
S	Source	Power return and gate reference; tied to PCB ground plane; source inductance must be minimized to suppress ringing

Key Features

Feature	Design Value
4th-generation E-series trench MOSFET	Delivers 25 % lower R_DS(on) × Q_g than previous generation, directly reducing total switching + conduction loss
Avalanche energy rated (UIS)	81 mJ single-pulse rating enables reliable operation without external snubbers in inductive load switching
Low effective output capacitance Co(er)	32 pF enables faster voltage transition and lower turn-off loss in hard-switched converters above 200 kHz
Enhanced body diode recovery	Q_rr = 2.1 μC and t_rr = 209 ns reduce reverse recovery stress and EMI in boost PFC circuits
PowerPAK® SO-8L thermal design	R_thJC = 1.0 °C/W allows >80 % of heat to flow vertically into PCB, eliminating need for bulky clip-based packages

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant AC-DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, high-current synchronous rectification switch operating at 250 kHz with 50 % duty cycle. Use Value: Low R_DS(on) and Q_g reduce thermal load on 2-oz copper heatsink; E_AS rating eliminates need for clamping diodes during line transients.	Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with >96 % efficiency. IC Role / Device Role / Timing Role: Fast-switching, high-reliability main switch handling 12 A RMS current at 100 kHz. Use Value: Optimized C_o(er) and t_rr minimize recovery loss and conducted EMI, meeting EN 55022 Class B without added filtering.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverter's DC-DC stage interfacing 1000 V PV arrays. IC Role / Device Role / Timing Role: 600 V-rated primary switch in interleaved flyback converter operating at 200 kHz. Use Value: 600 V V_DS rating with 150 °C T_J capability ensures reliability under desert ambient conditions; low Q_g eases gate driver sizing.	Use Scenario: Output stage switch in 5 kW servo drive feeding 3-phase BLDC motor with regenerative braking. IC Role / Device Role / Timing Role: High-ruggedness switching element subjected to repetitive inductive turn-off stress and body diode commutation. Use Value: 81 mJ E_AS and 30 A I_DM support safe energy absorption during brake events; low C_oss reduces voltage overshoot during fast di/dt transitions.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant AC-DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, high-current synchronous rectification switch operating at 250 kHz with 50 % duty cycle.

Use Value: Low R_DS(on) and Q_g reduce thermal load on 2-oz copper heatsink; E_AS rating eliminates need for clamping diodes during line transients.

Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with >96 % efficiency.

IC Role / Device Role / Timing Role: Fast-switching, high-reliability main switch handling 12 A RMS current at 100 kHz.

Use Value: Optimized C_o(er) and t_rr minimize recovery loss and conducted EMI, meeting EN 55022 Class B without added filtering.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverter's DC-DC stage interfacing 1000 V PV arrays.

IC Role / Device Role / Timing Role: 600 V-rated primary switch in interleaved flyback converter operating at 200 kHz.

Use Value: 600 V V_DS rating with 150 °C T_J capability ensures reliability under desert ambient conditions; low Q_g eases gate driver sizing.

Use Scenario: Output stage switch in 5 kW servo drive feeding 3-phase BLDC motor with regenerative braking.

IC Role / Device Role / Timing Role: High-ruggedness switching element subjected to repetitive inductive turn-off stress and body diode commutation.

Use Value: 81 mJ E_AS and 30 A I_DM support safe energy absorption during brake events; low C_oss reduces voltage overshoot during fast di/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60M2	R_DS(on) = 0.28 Ω (typ.), Q_g = 21 nC, TO-220 package, no Co(er) spec	Higher conduction loss; requires larger heatsink; unsuitable for ultra-thin board designs	Prefer when cost sensitivity outweighs thermal density and switching loss targets
IXFH24N60X	R_DS(on) = 0.22 Ω (typ.), Q_g = 32 nC, TO-247 package, E_AS = 420 mJ	Higher gate drive loss; superior avalanche ruggedness but 3× larger footprint and thermal mass	Prefer for high-reliability industrial motor drives where layout space and gate drive margin are available

Compared with STP12N60M2 and IXFH24N60X, SIHJ240N60E-T1-GE3 delivers the best balance of low-profile packaging, low R_DS(on) × Q_g, and controlled body diode recovery - making it optimal for space-constrained, high-frequency, high-efficiency power conversion where thermal management via PCB is prioritized.

Availability

SIHJ240N60E-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHJ240N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line targets high-frequency, high-efficiency switching applications including server PSUs, telecom rectifiers, and renewable energy inverters - engineered for low FOM and robust avalanche performance.

FAQ

What is the maximum continuous drain current for SIHJ240N60E-T1-GE3 at 100 °C case temperature?

The SIHJ240N60E-T1-GE3 supports 7 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package; operation above this current requires active cooling or reduced ambient temperature to maintain T_J ≤ 150 °C. The SIHJ240N60E-T1-GE3 datasheet specifies linear derating beyond 100 °C at 0.63 W/°C.

Does SIHJ240N60E-T1-GE3 have a specified gate threshold voltage range?

Yes, the SIHJ240N60E-T1-GE3 has a gate-source threshold voltage V_GS(th) range of 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious triggering. The SIHJ240N60E-T1-GE3 is not a logic-level device; 5 V drive is insufficient for full enhancement.

Is SIHJ240N60E-T1-GE3 suitable for use in avalanche mode?

Yes, the SIHJ240N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy E_AS of 81 mJ at T_J = 25 °C. This rating is validated per JEDEC JESD24-11 and permits safe operation in circuits with inductive loads such as motor drives and welding equipment without external protection. The SIHJ240N60E-T1-GE3 datasheet provides test conditions including L = 28.2 mH and I_AS = 2.4 A.

What is the thermal resistance from junction to case (R_thJC) for SIHJ240N60E-T1-GE3?

The SIHJ240N60E-T1-GE3 has a maximum junction-to-case thermal resistance R_thJC of 1.4 °C/W, with a typical value of 1.0 °C/W. This low value is enabled by the PowerPAK® SO-8L package's exposed drain pad, which provides a direct thermal path to the PCB copper layer. The SIHJ240N60E-T1-GE3 achieves >80 % of its heat transfer through the drain pad, minimizing reliance on leads for thermal conduction.

How does the body diode performance of SIHJ240N60E-T1-GE3 compare to standard 600 V MOSFETs?

The SIHJ240N60E-T1-GE3 features a fast, soft-recovery body diode with t_rr = 209 ns (typ.) and Q_rr = 2.1 μC (typ.) at T_J = 25 °C - significantly improved over legacy 600 V MOSFETs. This reduces diode-related switching loss and EMI in PFC and LLC topologies. The SIHJ240N60E-T1-GE3 body diode forward voltage V_SD is 1.2 V at I_S = 5.5 A, supporting efficient bidirectional conduction in synchronous rectification.

SIHJ240N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 783 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIHJ240N60E-T1-GE3 FAQ

1.How can I place an order for SIHJ240N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHJ240N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHJ240N60E-T1-GE3 reliable?

The price and inventory of SIHJ240N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHJ240N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHJ240N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHJ240N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHJ240N60E-T1-GE3?

SIHJ240N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHJ240N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHJ240N60E-T1-GE3?

For technical support, including SIHJ240N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHJ240N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHJ240N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHJ240N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHJ240N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHJ240N60E-T1-GE3?

All SIHJ240N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHJ240N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHJ240N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHJ240N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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