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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHJ690N60E-T1-GE3

Name: SIHJ690N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHJ690N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHJ690N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIHJ690N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 5.6A PPAK SO-8

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Product details

Overview

SIHJ690N60E-T1-GE3 from Vishay Siliconix is a 600 V, 5.6 A N-channel Power MOSFET in PowerPAK® SO-8L package, featuring R_DS(on) = 0.60 Ω (typ. at V_GS = 10 V), Q_g = 8 nC (typ.), and avalanche-rated (E_AS = 9 mJ). It serves as a high-voltage switching element in flyback converters and HID lighting ballasts.

For engineers reviewing the SIHJ690N60E-T1-GE3 datasheet, SIHJ690N60E-T1-GE3 pinout, SIHJ690N60E-T1-GE3 application, or SIHJ690N60E-T1-GE3 equivalent, key selection criteria include its 600 V V_DS, low 0.60 Ω on-resistance at 10 V gate drive, 8 nC total gate charge, 17 pF Co(er), and PowerPAK® SO-8L thermal performance (R_thJC = 1.9 °C/W).

Technical Context

This MOSFET employs Vishay's 4th-generation E series technology optimized for high-voltage SMPS topologies. Its low figure-of-merit (R_DS(on) × Q_g) and reduced effective output capacitance (Co(er) = 17 pF) directly lower conduction and switching losses in hard-switched flyback and resonant converters.

The device integrates an intrinsic body diode with t_rr = 146 ns (typ.) and Q_rr = 1.0 μC (typ.), supporting moderate-frequency discontinuous conduction mode (DCM) operation. Its 70 V/ns dv/dt rating and 9 mJ unclamped inductive switching capability ensure robustness under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in universal-input offline flyback converters up to 265 V_AC.
R_DS(on) typ.	0.60 Ω at V_GS = 10 V - enables <5.6 A continuous drain current at T_C = 25 °C with ≤2 W conduction loss.
Q_g max	12 nC - determines gate driver power requirement and switching speed in 65–100 kHz flyback designs.
E_AS	9 mJ - provides single-pulse avalanche ruggedness during transformer leakage energy discharge.
Co(er)	17 pF - reduces stored output capacitance energy, lowering turn-on loss in hard-switched topologies.
R_thJC max	2.6 °C/W - allows 48 W power dissipation with ≤125 °C junction rise above case at steady state.
t_rr	146 ns typ. - limits reverse recovery stress on synchronous rectifiers or clamp circuits in DCM operation.

Pinout & Package

Package: PowerPAK® SO-8L - surface-mount, dual-sided copper-exposed leadframe enhancing thermal transfer to PCB; footprint compatible with SO-8 but with enhanced thermal performance (R_thJC = 1.9 °C/W vs. ~3.5 °C/W for standard SO-8).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; input capacitance C_iss = 347 pF affects gate driver sizing.
D	Drain	High-voltage switching node; connected to transformer primary and bulk capacitor; handles 600 V blocking and 11 A pulsed current.
S	Source	Power ground reference for gate drive and current sensing; tied to PCB thermal pad for heat extraction.
Exposed Pad	Drain (internally connected)	Primary thermal path to PCB; must be soldered to ≥2 cm² copper pour for rated 48 W dissipation.

Key Features

Feature	Design Value
4th-gen E series technology	Optimized trench-gate process delivering 30 % lower R_DS(on)×Q_g vs. prior generation for same voltage class.
Low Co(er)	17 pF - cuts turn-on switching loss by >25 % compared to standard 600 V MOSFETs with similar R_DS(on).
Avalanche-rated (UIS)	9 mJ single-pulse rating - eliminates need for external snubbers in flyback transformer reset transients.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912); suitable for consumer and industrial end-equipment.
PowerPAK® SO-8L package	Thermal resistance R_thJC = 1.9 °C/W - enables 2× higher power density than TO-220 in space-constrained wall adapters.

Applications

Flyback Converter Primary Switch	HID Lamp Ballast
Use Scenario: Primary-side switch in 15–65 W offline flyback power supplies for LED drivers and AC/DC adapters. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with DCM/CCM transition; handles 600 V blocking and 5.6 A peak current. Use Value: Low Q_g (8 nC) and Co(er) (17 pF) reduce gate drive loss and turn-on loss, improving efficiency by 0.8–1.2 % at full load vs. legacy 600 V MOSFETs.	Use Scenario: Resonant half-bridge switch in electronic ballasts for 35–70 W automotive and commercial HID lamps. IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling lamp ignition and steady-state current; withstands 600 V DC bus and repetitive 100–200 kHz switching. Use Value: 70 V/ns dv/dt rating and 9 mJ E_AS prevent false triggering and avalanche failure during lamp hot restrike events.
Fluorescent Ballast Lighting	Wall Adaptor SMPS
Use Scenario: High-frequency inverter switch in digital fluorescent lamp ballasts driving 20–40 W T5/T8 tubes. IC Role / Device Role / Timing Role: Half-bridge upper/lower switch operating at 25–65 kHz; manages lamp preheat, ignition, and regulation phases. Use Value: Body diode t_rr = 146 ns (typ.) minimizes cross-conduction loss during dead-time, improving thermal margin by 8–10 °C.	Use Scenario: Main switch in compact 5–24 W universal-input wall plug-in adapters for consumer electronics. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) or fixed-frequency flyback; operates at 65 kHz with 5.6 A peak current. Use Value: PowerPAK® SO-8L package delivers 48 W power handling in <100 mm² PCB area-enabling sub-20 mm height designs without heatsinks.

Flyback Converter Primary Switch

HID Lamp Ballast

Use Scenario: Primary-side switch in 15–65 W offline flyback power supplies for LED drivers and AC/DC adapters.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with DCM/CCM transition; handles 600 V blocking and 5.6 A peak current.

Use Value: Low Q_g (8 nC) and Co(er) (17 pF) reduce gate drive loss and turn-on loss, improving efficiency by 0.8–1.2 % at full load vs. legacy 600 V MOSFETs.

Use Scenario: Resonant half-bridge switch in electronic ballasts for 35–70 W automotive and commercial HID lamps.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling lamp ignition and steady-state current; withstands 600 V DC bus and repetitive 100–200 kHz switching.

Use Value: 70 V/ns dv/dt rating and 9 mJ E_AS prevent false triggering and avalanche failure during lamp hot restrike events.

Fluorescent Ballast Lighting

Wall Adaptor SMPS

Use Scenario: High-frequency inverter switch in digital fluorescent lamp ballasts driving 20–40 W T5/T8 tubes.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switch operating at 25–65 kHz; manages lamp preheat, ignition, and regulation phases.

Use Value: Body diode t_rr = 146 ns (typ.) minimizes cross-conduction loss during dead-time, improving thermal margin by 8–10 °C.

Use Scenario: Main switch in compact 5–24 W universal-input wall plug-in adapters for consumer electronics.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) or fixed-frequency flyback; operates at 65 kHz with 5.6 A peak current.

Use Value: PowerPAK® SO-8L package delivers 48 W power handling in <100 mm² PCB area-enabling sub-20 mm height designs without heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 0.75 Ω, Q_g = 14 nC, TO-220FP package	Higher R_DS(on) and Q_g; requires heatsink above 15 W; no integrated avalanche rating	Preferred where cost sensitivity outweighs board space and thermal constraints; not drop-in due to through-hole packaging.
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220 package - mismatched voltage class	Not suitable for 600 V applications; only viable in low-voltage secondary-side or DC-DC stages	Invalid alternative for primary-side 600 V use; included only to clarify voltage-class boundaries.

Compared with STP6NK60ZFP, SIHJ690N60E-T1-GE3 delivers 20 % lower conduction loss and 43 % lower gate charge in a surface-mount package enabling smaller, cooler-running adapters; IXTP50N10P is electrically incompatible for 600 V flyback primary switching.

Availability

SIHJ690N60E-T1-GE3 is available at Aetrix Electronics and suitable for flyback converter primary switches, HID lamp ballasts, fluorescent ballast lighting, and wall adaptor SMPS requiring stable component supply and long-term industrial availability.

Supply support for SIHJ690N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The E Series Power MOSFET product line targets high-voltage, high-frequency switching applications including offline SMPS, lighting ballasts, and industrial power conversion-designed to replace older planar MOSFETs with superior FOM and ruggedness.

FAQ

What is the maximum continuous drain current rating for SIHJ690N60E-T1-GE3 at 100 °C case temperature?

The SIHJ690N60E-T1-GE3 has a continuous drain current rating of 3.5 A at T_C = 100 °C, derated linearly from 5.6 A at 25 °C using a factor of 0.38 W/°C. This reflects thermal limitations of the PowerPAK® SO-8L package under sustained high-power operation. The SIHJ690N60E-T1-GE3 must be mounted on adequate PCB copper area to maintain safe junction temperatures.

Does SIHJ690N60E-T1-GE3 support logic-level gate drive?

No, SIHJ690N60E-T1-GE3 is not a logic-level MOSFET; its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and it is specified for R_DS(on) at V_GS = 10 V. Driving it below 8 V risks incomplete enhancement and excessive conduction loss. The SIHJ690N60E-T1-GE3 requires a dedicated 10–15 V gate driver stage in typical flyback controller implementations.

What is the significance of Co(er) = 17 pF for SIHJ690N60E-T1-GE3 in switching loss calculation?

Co(er) = 17 pF is the energy-related effective output capacitance of SIHJ690N60E-T1-GE3, representing the fixed capacitance that stores the same energy as the nonlinear C_oss during V_DS rise from 0 to 480 V. In hard-switched flyback converters, this value directly determines turn-on switching loss (E_on ≈ ½ × Co(er) × V_DS² × f_sw), making it critical for efficiency optimization at 65–100 kHz.

Is SIHJ690N60E-T1-GE3 suitable for use in synchronous rectification circuits?

No, SIHJ690N60E-T1-GE3 is not suitable for synchronous rectification because it is a 600 V N-channel MOSFET optimized for high-side primary switching-not low-side secondary-side rectification. Its body diode forward voltage (V_SD = 1.2 V) and reverse recovery characteristics (t_rr = 146 ns) are not optimized for fast, low-loss secondary-side conduction. The SIHJ690N60E-T1-GE3 should be used only in primary-side switching roles.

How does the avalanche energy rating of SIHJ690N60E-T1-GE3 improve system reliability in flyback designs?

The SIHJ690N60E-T1-GE3 is rated for 9 mJ single-pulse avalanche energy (E_AS), which allows it to safely absorb inductive energy from transformer leakage without failure during abnormal conditions like output short-circuit or startup overshoot. This eliminates the need for external clamping circuits in many flyback designs, simplifying layout and improving long-term reliability. The SIHJ690N60E-T1-GE3 leverages this rating to sustain repeated transient stress without parameter shift or degradation.

SIHJ690N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 347 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIHJ690N60E-T1-GE3 FAQ

1.How can I place an order for SIHJ690N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHJ690N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHJ690N60E-T1-GE3 reliable?

The price and inventory of SIHJ690N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHJ690N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHJ690N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHJ690N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHJ690N60E-T1-GE3?

SIHJ690N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHJ690N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHJ690N60E-T1-GE3?

For technical support, including SIHJ690N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHJ690N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHJ690N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHJ690N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHJ690N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHJ690N60E-T1-GE3?

All SIHJ690N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHJ690N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHJ690N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHJ690N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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