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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHJ6N65E-T1-GE3

Name: SIHJ6N65E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHJ6N65E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHJ6N65E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIHJ6N65E-T1-GE3.pdf

Description:: MOSFET N-CH 650V 5.6A PPAK SO-8

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Product details

Overview

SIHJ6N65E-T1-GE3 from Vishay Siliconix is a 650 V, 5.6 A N-channel Power MOSFET in PowerPAK® SO-8L package, featuring R_DS(on) = 0.755 Ω at V_GS = 10 V, Q_g = 16 nC (typ), and avalanche-rated (E_AS = 36 mJ). It delivers low conduction and switching losses for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHJ6N65E-T1-GE3 datasheet, SIHJ6N65E-T1-GE3 pinout, SIHJ6N65E-T1-GE3 application, or SIHJ6N65E-T1-GE3 equivalent, key selection criteria include its 650 V V_DS, ultra-low gate charge, rugged body diode (t_rr = 278 ns typ), and thermal resistance R_thJC = 1.2 °C/W - critical for compact, thermally constrained AC/DC and lighting designs.

Technical Context

This MOSFET employs planar silicon technology with optimized charge balance for high-voltage operation. Its low C_iss (596 pF) and C_rss (4 pF) enable fast, low-loss switching under hard-switching conditions up to 520 V drain voltage.

The device integrates an intrinsic body diode rated for continuous 5.6 A and pulsed 12 A, with V_SD = 0.9 V (typ) at 3 A and controlled reverse recovery (Q_rr = 2.1 μC typ), supporting reliable operation in discontinuous conduction mode (DCM) PFC and flyback topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports universal-input AC/DC designs up to 380 V DC bus with margin
R_DS(on)	0.755 Ω @ V_GS = 10 V - enables <5 W conduction loss at 3 A continuous current
Q_g	16 nC (typ) - reduces gate drive power and enables >300 kHz switching without excessive driver stress
E_AS	36 mJ - withstands unclamped inductive energy in PFC boost chokes during fault events
R_thJC	1.2 °C/W - allows >60 W power dissipation with modest heatsinking in SO-8L footprint
t_rr	278 ns (typ) - minimizes diode recovery loss and EMI in high-frequency DCM converters
C_iss	596 pF - low input capacitance improves Miller immunity and gate drive efficiency

Pinout & Package

PowerPAK® SO-8L is a surface-mount, dual-side cooling package with exposed drain pad on bottom and standard SO-8L footprint (5.13 mm × 6.15 mm). Thermal performance is enhanced by direct die-to-PCB thermal path via the drain tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; ±30 V absolute max rating
D	Drain	Main high-side power terminal; electrically connected to exposed bottom pad for thermal and electrical sinking
S	Source	Reference node for gate drive and current sensing; tied to power ground in most SMPS topologies

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	12.1 Ω·nC - balances conduction and switching loss for optimal efficiency across 100–300 kHz range
Avalanche energy rating	36 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Body diode softness	Q_rr/I_RRM = 0.175 μC/A - reduces voltage overshoot and EMI during diode commutation
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709 - suitable for consumer and industrial end-equipment
Enhanced dV/dt immunity	70 V/ns (T_J = 125 °C) - prevents false turn-on in high-noise bridge-leg environments

Applications

Switch Mode Power Supplies (SMPS)	Power Factor Correction (PFC)
Use Scenario: Primary-side switch in 65–150 W offline flyback converters with universal AC input. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into transformer primary winding. Use Value: Low Q_g and R_DS(on) reduce total losses by ~15% vs. legacy 650 V MOSFETs, enabling higher efficiency at 230 V AC input.	Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for LED drivers and adapters. IC Role / Device Role / Timing Role: Fast-switching power switch in boost inductor path, operating at 65–100 kHz. Use Value: Avalanche rating and low C_oss allow robust operation under line transients and light-load zero-current switching.
High-Intensity Discharge (HID) Lighting	Fluorescent Ballast Lighting
Use Scenario: Half-bridge switching device in electronic ballasts driving 70–250 W metal halide lamps. IC Role / Device Role / Timing Role: High-side and low-side switch in resonant inverter stage generating high-frequency AC for lamp ignition and regulation. Use Value: 150 °C T_J rating and low R_DS(on) sustain stable operation in enclosed, thermally demanding fixtures.	Use Scenario: Resonant switch in instant-start fluorescent ballasts for commercial office lighting. IC Role / Device Role / Timing Role: Hard-switched power transistor controlling series-resonant tank frequency and lamp current. Use Value: Fast t_r/t_f (14/17 ns typ) and low C_iss support precise timing control and reduced acoustic noise in magnetic components.

Switch Mode Power Supplies (SMPS)

Power Factor Correction (PFC)

Use Scenario: Primary-side switch in 65–150 W offline flyback converters with universal AC input.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into transformer primary winding.

Use Value: Low Q_g and R_DS(on) reduce total losses by ~15% vs. legacy 650 V MOSFETs, enabling higher efficiency at 230 V AC input.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for LED drivers and adapters.

IC Role / Device Role / Timing Role: Fast-switching power switch in boost inductor path, operating at 65–100 kHz.

Use Value: Avalanche rating and low C_oss allow robust operation under line transients and light-load zero-current switching.

High-Intensity Discharge (HID) Lighting

Fluorescent Ballast Lighting

Use Scenario: Half-bridge switching device in electronic ballasts driving 70–250 W metal halide lamps.

IC Role / Device Role / Timing Role: High-side and low-side switch in resonant inverter stage generating high-frequency AC for lamp ignition and regulation.

Use Value: 150 °C T_J rating and low R_DS(on) sustain stable operation in enclosed, thermally demanding fixtures.

Use Scenario: Resonant switch in instant-start fluorescent ballasts for commercial office lighting.

IC Role / Device Role / Timing Role: Hard-switched power transistor controlling series-resonant tank frequency and lamp current.

Use Value: Fast t_r/t_f (14/17 ns typ) and low C_iss support precise timing control and reduced acoustic noise in magnetic components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, R_DS(on) = 0.95 Ω, Q_g = 22 nC, TO-220FP package	Larger thermal resistance (R_thJC = 2.5 °C/W); no integrated avalanche rating	Preferred where through-hole mounting and higher peak current (>6 A) are required, but less efficient at high frequency
IXTH6N65X2	650 V, R_DS(on) = 0.85 Ω, Q_g = 18 nC, TO-247 package	Higher R_DS(on) and larger footprint; superior surge current handling (I_DM = 24 A)	Chosen when extreme ruggedness and >100 W dissipation are needed, accepting trade-off in board space and switching speed

Compared with STP6NK60ZFP and IXTH6N65X2, SIHJ6N65E-T1-GE3 offers the lowest R_DS(on) × Q_g FOM in SO-8L form factor, enabling higher power density and efficiency in space-constrained, medium-power SMPS and lighting systems - without requiring PCB layout changes for leaded alternatives.

Availability

SIHJ6N65E-T1-GE3 is available at Aetrix Electronics and suitable for switch mode power supplies, power factor correction circuits, and HID/fluorescent lighting ballasts requiring stable component supply and long-term manufacturability.

Supply support for SIHJ6N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.

The E Series Power MOSFETs, including SIHJ6N65E-T1-GE3, were designed for high-efficiency, high-voltage switching in compact AC/DC converters, lighting, and industrial power supplies - prioritizing low gate charge and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHJ6N65E-T1-GE3 at 100 °C case temperature?

The SIHJ6N65E-T1-GE3 has a continuous drain current rating of 3.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from its 5.6 A rating at 25 °C due to thermal constraints, and must be validated against actual board-level thermal design using R_thJC = 1.2 °C/W and ambient conditions. The SIHJ6N65E-T1-GE3 datasheet confirms this limit applies under V_GS = 10 V and T_J ≤ 150 °C.

Does SIHJ6N65E-T1-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHJ6N65E-T1-GE3 is avalanche energy rated with E_AS = 36 mJ (single pulse), tested per note b: V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.6 A. This rating ensures robustness against inductive switching transients in PFC and SMPS applications without external clamping. The SIHJ6N65E-T1-GE3 specification sheet explicitly states "Avalanche energy rated (UIS)" as a core feature.

What is the typical reverse recovery time (t_rr) of the body diode in SIHJ6N65E-T1-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the integral body diode in SIHJ6N65E-T1-GE3 is 278 ns, measured at T_J = 25 °C, I_F = I_S = 3 A, dI/dt = 100 A/μs, and V_R = 25 V. This parameter is critical for minimizing commutation loss in DCM topologies. The SIHJ6N65E-T1-GE3 datasheet lists t_rr in the Drain-Source Body Diode Characteristics table with min/typ/max values.

Can SIHJ6N65E-T1-GE3 be driven directly by a 5 V logic-level controller?

No - SIHJ6N65E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) = 0.755 Ω. Driving it with only 5 V results in significantly higher on-resistance (>3 Ω), excessive conduction loss, and thermal risk. The SIHJ6N65E-T1-GE3 datasheet specifies R_DS(on) only at V_GS = 10 V, confirming standard-level gate drive requirement.

What is the thermal resistance from junction to case (R_thJC) for SIHJ6N65E-T1-GE3, and how does it impact heatsink design?

The maximum junction-to-case thermal resistance (R_thJC) for SIHJ6N65E-T1-GE3 is 1.7 °C/W, with typical value 1.2 °C/W. This low value - enabled by the PowerPAK® SO-8L's exposed drain pad - allows >60 W power dissipation with minimal heatsink area. For example, at 74 W P_D and 1.2 °C/W, ΔT = 89 °C, permitting safe operation below 150 °C T_J with modest copper pour. The SIHJ6N65E-T1-GE3 thermal data is provided in the Thermal Resistance Ratings table.

SIHJ6N65E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 868mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 596 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIHJ6N65E-T1-GE3 FAQ

1.How can I place an order for SIHJ6N65E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHJ6N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHJ6N65E-T1-GE3 reliable?

The price and inventory of SIHJ6N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHJ6N65E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHJ6N65E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHJ6N65E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHJ6N65E-T1-GE3?

SIHJ6N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHJ6N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHJ6N65E-T1-GE3?

For technical support, including SIHJ6N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHJ6N65E-T1-GE3 requirements.

6.How does Aetrix verify that SIHJ6N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHJ6N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHJ6N65E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHJ6N65E-T1-GE3?

All SIHJ6N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHJ6N65E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHJ6N65E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHJ6N65E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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