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Vishay Siliconix SIHJ7N65E-T1-GE3
- Part No.:
- SIHJ7N65E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIHJ7N65E-T1-GE3.pdf
- Description:
- MOSFET N-CH 650V 7.9A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,144
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Product details
Overview
SIHJ7N65E-T1-GE3 from Vishay Siliconix is a 650 V, 7.9 A N-channel enhancement-mode Power MOSFET in PowerPAK® SO-8L package, featuring RDS(on) = 0.520 Ω (VGS = 10 V), Qg = 22 nC (typ.), and avalanche-rated (EAS = 68 mJ). It delivers low conduction and switching losses for high-efficiency flyback and SMPS primary-side switching.
For engineers reviewing the SIHJ7N65E-T1-GE3 datasheet, SIHJ7N65E-T1-GE3 pinout, SIHJ7N65E-T1-GE3 application, or SIHJ7N65E-T1-GE3 equivalent, key selection criteria include its 650 V VDS, ultra-low gate charge, rugged UIS capability, and thermal performance in compact surface-mount packaging.
Technical Context
This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low Ciss (820 pF) and minimized Qgd/Qg ratio (9/22 nC) reduce Miller-induced turn-off delay and improve controllability under high dV/dt conditions up to 70 V/ns.
The integrated body diode supports continuous IS = 7.9 A with VSD = 0.9 V (TJ = 25 °C), and exhibits trr = 299 ns (typ.) at 100 A/μs - enabling reliable operation in discontinuous conduction mode (DCM) flyback converters without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Withstands full-line transient surges in universal-input AC/DC adapters and industrial SMPS. |
| RDS(on) max | 0.598 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 3.5 A DC, supporting thermally constrained PCB layouts. |
| Qg max | 44 nC - Reduces gate driver power demand and enables use of low-cost, low-current controllers (e.g., UC384x family). |
| EAS | 68 mJ - Rated for unclamped inductive switching stress, eliminating need for external clamping in flyback snubberless designs. |
| RthJC max | 1.3 °C/W - Supports >90 W power dissipation with minimal heatsinking when mounted on 1-in² 2-oz copper pad. |
| Qrr | 2.9 μC (typ.) - Limits reverse recovery current overshoot during synchronous rectification transitions. |
| VGS(th) | 2.0–4.0 V - Ensures robust turn-on margin with standard 10 V gate drivers while avoiding spurious turn-on from noise. |
Pinout & Package
Package: PowerPAK® SO-8L Single - 5.13 mm × 6.15 mm × 1.07 mm surface-mount package with exposed drain paddle for enhanced thermal transfer and reduced RthJC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 0–10 V logic-level drive; low Ciss (820 pF) minimizes driver loading and EMI generation. |
| D (Drain) | High-side power output | Connected to internal drain paddle; electrically and thermally tied to PCB copper pour for efficient heat extraction. |
| S (Source) | Reference node / return path | Serves as local ground reference for gate drive; low-inductance layout critical for stable switching at >100 kHz. |
Key Features
| Feature | Design Value |
|---|---|
| Low FOM (RDS(on) × Qg) | 23.0 Ω·nC - Balances conduction and switching losses for optimal efficiency across 65–100 kHz flyback operating range. |
| Avalanche energy rating | 68 mJ single-pulse - Eliminates need for external RCD clamp in cost-sensitive offline SMPS designs. |
| Ultra-low Qgd | 9 nC - Suppresses Miller plateau duration, improving dV/dt immunity and reducing cross-conduction risk in half-bridge topologies. |
| Body diode softness factor | trr = 299 ns, Qrr = 2.9 μC - Minimizes voltage spikes and EMI during diode commutation in quasi-resonant converters. |
| Lead (Pb)-free & Halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709C - Suitable for consumer and industrial end-equipment requiring green compliance. |
Applications
| AC/DC Wall Adaptors | Industrial Flyback SMPS |
|---|---|
|
Use Scenario: Universal-input (85–265 VAC) 12 W–30 W isolated power supply for smart home devices. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in DCM flyback topology, driven by UC3842 controller at 65 kHz. Use Value: Low Qg enables direct drive from controller's 200 mA gate output; 650 V rating ensures margin against 400 V DC bus transients. |
Use Scenario: 48 V/1 A regulated output for PLC I/O modules operating in harsh ambient (TA ≤ 70 °C). IC Role / Device Role / Timing Role: Main switching element in fixed-frequency flyback with optocoupler feedback and overvoltage protection. Use Value: RthJC = 1.3 °C/W allows full 7.9 A current capability without heatsink; EAS rating eliminates need for TVS clamping on transformer primary. |
| HID Lamp Ballasts | Fluorescent Electronic Ballasts |
|
Use Scenario: High-intensity discharge lamp igniter and regulation stage in streetlight drivers (100–250 W). IC Role / Device Role / Timing Role: Resonant half-bridge switch handling high peak currents during lamp ignition pulses. Use Value: Avalanche rating withstands repetitive inductive kickback from resonant tank; low Coss reduces dead-time losses during ZVS transitions. |
Use Scenario: Compact T5/T8 electronic ballast with dimming support and active PFC front-end. IC Role / Device Role / Timing Role: Secondary-side switch in self-oscillating flyback for lamp filament preheat and run-up control. Use Value: VGS(th) window (2.0–4.0 V) prevents false triggering from gate noise during high-dV/dt lamp striking; soft-recovery diode limits EMI. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7NK65ZFP | 650 V, 7 A, RDS(on) = 0.75 Ω, Qg = 35 nC, TO-220FP package | Larger footprint and higher RthJA (60 °C/W); requires heatsink above 3 W dissipation | Preferred where through-hole mounting or legacy board compatibility is required; not drop-in for PowerPAK SO-8L layout. |
| IXTP7N65X2 | 650 V, 7 A, RDS(on) = 0.55 Ω, Qg = 24 nC, TO-220 package | Higher RthJC (1.8 °C/W) and no avalanche rating; lacks EAS specification | Valid for non-UIS-critical flyback designs with forced-air cooling; unsuitable for snubberless or high-reliability industrial use. |
Compared with STP7NK65ZFP and IXTP7N65X2, SIHJ7N65E-T1-GE3 offers superior thermal performance in surface-mount form, guaranteed avalanche ruggedness, and lower gate charge - making it the preferred choice for space-constrained, high-reliability AC/DC converters where layout density and transient robustness are critical.
Availability
SIHJ7N65E-T1-GE3 is available at Aetrix Electronics and suitable for AC/DC wall adaptors, industrial flyback SMPS, and HID lighting ballasts requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SIHJ7N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The SIHJ7N65E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switching in offline power conversion - prioritizing low FOM, ruggedness, and surface-mount thermal performance.
FAQ
What is the maximum continuous drain current for SIHJ7N65E-T1-GE3 at 100 °C case temperature?
The SIHJ7N65E-T1-GE3 supports a continuous drain current of 5.0 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package and ensures safe operation within its 1.3 °C/W RthJC limit. At TC = 25 °C, the rated current increases to 7.9 A.
Does SIHJ7N65E-T1-GE3 have avalanche energy rating, and what is its value?
Yes, SIHJ7N65E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 68 mJ, tested per JEDEC standard JESD24-1. This rating is confirmed in the Absolute Maximum Ratings table and enables robust operation in flyback converters without external clamping components.
What is the typical gate threshold voltage range for SIHJ7N65E-T1-GE3?
The gate-source threshold voltage (VGS(th)) for SIHJ7N65E-T1-GE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious activation in noisy power environments.
Can SIHJ7N65E-T1-GE3 be used in zero-voltage switching (ZVS) topologies?
Yes, SIHJ7N65E-T1-GE3 supports ZVS operation due to its low Coss (48 pF typ.) and low Qgd/Qg ratio (9/22 nC), which minimize capacitive losses and improve resonant tank control. Its 70 V/ns dV/dt rating and soft-recovery body diode (trr = 299 ns) further enhance reliability in phase-shifted full-bridge or LLC resonant converters.
What is the thermal resistance from junction to case (RthJC) for SIHJ7N65E-T1-GE3?
The maximum junction-to-case thermal resistance (RthJC) for SIHJ7N65E-T1-GE3 is 1.3 °C/W, measured from junction to the exposed drain paddle. This low value is enabled by the PowerPAK® SO-8L package construction and allows effective heat transfer to the PCB copper, supporting high-power density designs without additional heatsinking.
SIHJ7N65E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 598mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 820 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIHJ7N65E-T1-GE3 FAQ
1.How can I place an order for SIHJ7N65E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHJ7N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHJ7N65E-T1-GE3 reliable?
The price and inventory of SIHJ7N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHJ7N65E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHJ7N65E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHJ7N65E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHJ7N65E-T1-GE3?
SIHJ7N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHJ7N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHJ7N65E-T1-GE3?
For technical support, including SIHJ7N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHJ7N65E-T1-GE3 requirements.
6.How does Aetrix verify that SIHJ7N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHJ7N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHJ7N65E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHJ7N65E-T1-GE3?
All SIHJ7N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHJ7N65E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHJ7N65E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHJ7N65E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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