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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK045N60EF-T1GE3

Name: SIHK045N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHK045N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK045N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK045N60EF-T1GE3.pdf

Description:: E SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHK045N60EF-T1GE3 from Vishay Siliconix is a 600 V, 47 A N-channel Power MOSFET in PowerPAK 10 x 12 (TOLL) package, featuring 45 mΩ R_DS(on) at V_GS = 10 V, 105 nC total gate charge, and fast body diode with 127 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK045N60EF-T1GE3 datasheet, SIHK045N60EF-T1GE3 pinout, SIHK045N60EF-T1GE3 application, or SIHK045N60EF-T1GE3 equivalent, key selection criteria include avalanche-rated ruggedness (261 mJ E_AS), low effective output capacitance (171 pF Co(er)), and thermal resistance of 0.45 °C/W (junction-to-case), critical for high-power density designs.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series technology optimized for hard-switched and resonant topologies. Its low R_DS(on) × Q_g figure-of-merit (4.7 mΩ·nC) and reduced C_oss(er) minimize switching loss while maintaining robust UIS capability.

The integrated fast-recovery body diode supports synchronous rectification and ZVS operation, with confirmed trr = 127 ns (typ.) and Q_rr = 0.8 μC at T_J = 25 °C. dv/dt immunity is rated at 100 V/ns (drain-source) and 50 V/ns (reverse diode), enabling stable operation in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus with 50 % safety margin in PFC and industrial inverters
R_DS(on) max	0.052 Ω - Ensures <1.5 W conduction loss at 17 A continuous drain current
Q_g max	105 nC - Determines gate drive power requirement and switching speed in 100–500 kHz SMPS
E_AS	261 mJ - Enables reliable unclamped inductive switching without external snubbers
R_thJC	0.45 °C/W - Allows >250 W power dissipation with moderate heatsinking at T_C = 100 °C
trr	127 ns (typ.) - Reduces diode recovery loss and EMI in bridge-leg configurations
Co(er)	171 pF - Low energy-related output capacitance improves light-load efficiency in LLC converters

Pinout & Package

Package: PowerPAK® 10 x 12 (TOLL) - thermally enhanced surface-mount package with exposed drain tab for low-inductance, high-current PCB mounting and direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (tab)	Main power path return to DC bus	Exposed copper pad - must be soldered to large copper pour or heatsink for thermal and electrical integrity
Source (pins 3–8)	Power ground reference for channel and body diode	Parallel pins reduce source inductance and improve current sharing in high-di/dt switching
Gate (pin 1)	Control terminal for channel modulation	Low-impedance input requiring <10 Ω series gate resistor to damp ringing and control dV/dt
Driver Source (pin 2)	Reference for gate driver IC return path	Separate Kelvin source connection minimizes gate loop inductance and improves switching stability

Key Features

Feature	Design Value
4th-gen E-series silicon	Optimized cell layout reduces R_DS(on) × Q_g to 4.7 mΩ·nC - directly lowers combined conduction + switching loss
Avalanche-rated (UIS)	261 mJ single-pulse energy rating - eliminates need for external clamping in motor drive and inverter short-circuit events
Fast body diode	127 ns t_rr, 0.8 μC Q_rr - enables efficient synchronous rectification and reduces dead-time losses in half-bridge topologies
Low Co(er)	171 pF - cuts stored output capacitance energy by ~40 % vs. standard 600 V MOSFETs, improving light-load efficiency
Thermal performance	0.45 °C/W R_thJC - supports >275 W continuous power dissipation with minimal case temperature rise

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 100–300 kHz with 380–400 V DC output. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage. Use Value: 45 mΩ R_DS(on) and 105 nC Q_g enable >98.5 % efficiency at full load; avalanche rating handles line surges without derating.	Use Scenario: High-density 48 V telecom rectifier with dual active-clamp forward or LLC topology. IC Role / Device Role / Timing Role: Primary-side switch handling 10–20 A RMS current at 200–500 kHz. Use Value: Fast body diode (127 ns trr) and low Co(er) reduce switching loss and EMI; PowerPAK 10x12 footprint supports compact layout.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter Leg
Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge configuration. Use Value: 600 V V_DS rating accommodates 1000 V DC link with margin; 50 V/ns reverse diode dv/dt rating prevents false turn-on during commutation.	Use Scenario: Half-bridge leg in 3–7.5 kW variable-frequency drives powering induction motors. IC Role / Device Role / Timing Role: Low-side switching element with freewheeling body diode conduction. Use Value: 261 mJ E_AS withstands motor stall and short-circuit transients; parallel source pins lower parasitic inductance for clean gate drive.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 100–300 kHz with 380–400 V DC output.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage.

Use Value: 45 mΩ R_DS(on) and 105 nC Q_g enable >98.5 % efficiency at full load; avalanche rating handles line surges without derating.

Use Scenario: High-density 48 V telecom rectifier with dual active-clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side switch handling 10–20 A RMS current at 200–500 kHz.

Use Value: Fast body diode (127 ns trr) and low Co(er) reduce switching loss and EMI; PowerPAK 10x12 footprint supports compact layout.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter Leg

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge configuration.

Use Value: 600 V V_DS rating accommodates 1000 V DC link with margin; 50 V/ns reverse diode dv/dt rating prevents false turn-on during commutation.

Use Scenario: Half-bridge leg in 3–7.5 kW variable-frequency drives powering induction motors.

IC Role / Device Role / Timing Role: Low-side switching element with freewheeling body diode conduction.

Use Value: 261 mJ E_AS withstands motor stall and short-circuit transients; parallel source pins lower parasitic inductance for clean gate drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.042 Ω, Q_g = 110 nC, TO-247 package	Larger footprint and higher thermal resistance (R_thJC = 0.55 °C/W); no Kelvin source	Preferred where through-hole mounting or legacy TO-247 heatsink compatibility is required
IXFH50N60X3	600 V, 50 A, R_DS(on) = 0.055 Ω, Q_g = 85 nC, TO-247 package with ultra-fast diode (trr = 85 ns)	Lower Q_g but higher R_DS(on); faster diode but no avalanche rating (E_AS not specified)	Selected when lowest gate drive loss dominates over conduction loss and avalanche robustness is secondary

Compared with STW62N60M2 and IXFH50N60X3, SIHK045N60EF-T1GE3 offers superior thermal performance (0.45 °C/W), integrated Kelvin source for stable gate control, and guaranteed avalanche ruggedness-making it optimal for space-constrained, high-reliability PFC and inverter designs where board area and transient resilience are critical.

Availability

SIHK045N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHK045N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EF Series targets high-efficiency, high-reliability power conversion systems-including PFC, SMPS, and motor drives-by combining low FOM, fast body diodes, and rugged avalanche capability in thermally optimized packages.

FAQ

What is the maximum continuous drain current for SIHK045N60EF-T1GE3 at 100 °C case temperature?

The SIHK045N60EF-T1GE3 supports 30 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the PowerPAK 10 x 12 package and ensures safe operation under sustained high-power conditions without exceeding T_J = 150 °C. The SIHK045N60EF-T1GE3 datasheet confirms this value under "Continuous drain current (T_J = 150 °C)" with test condition TC = 100 °C.

Does SIHK045N60EF-T1GE3 have a Kelvin source connection, and how is it implemented?

Yes, the SIHK045N60EF-T1GE3 features a dedicated Kelvin source (pin 2), separate from the main source terminals (pins 3–8). This design isolates the gate driver return path from high-current source paths, minimizing voltage spikes and improving switching stability. The SIHK045N60EF-T1GE3 product summary explicitly labels pin 2 as "Driver source", confirming its role in precision gate control.

What is the typical reverse recovery time (trr) of the body diode in SIHK045N60EF-T1GE3, and under what conditions is it measured?

The SIHK045N60EF-T1GE3 body diode has a typical reverse recovery time (t_rr) of 127 ns, measured at T_J = 25 °C, I_F = I_S = 17 A, di/dt = 100 A/μs, and V_R = 400 V. This value is specified in the "Drain-Source Body Diode Characteristics" section of the SIHK045N60EF-T1GE3 datasheet and enables efficient operation in hard- and soft-switched topologies.

Is SIHK045N60EF-T1GE3 suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, the SIHK045N60EF-T1GE3 is fully rated for repetitive and single-pulse avalanche operation, with a specified single-pulse avalanche energy (E_AS) of 261 mJ. This rating is tested per JEDEC standards with V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.3 A. The SIHK045N60EF-T1GE3 datasheet lists E_AS in the Absolute Maximum Ratings table and confirms avalanche capability in the Features section.

What is the gate-source threshold voltage range for SIHK045N60EF-T1GE3, and how does it affect drive circuit design?

The SIHK045N60EF-T1GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature variation. The SIHK045N60EF-T1GE3 specifications confirm that R_DS(on) is characterized at V_GS = 10 V, making 12 V gate drive standard for robust operation.

SIHK045N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4685 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK045N60EF-T1GE3 FAQ

1.How can I place an order for SIHK045N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK045N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK045N60EF-T1GE3 reliable?

The price and inventory of SIHK045N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK045N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHK045N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK045N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK045N60EF-T1GE3?

SIHK045N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK045N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK045N60EF-T1GE3?

For technical support, including SIHK045N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK045N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHK045N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK045N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK045N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHK045N60EF-T1GE3?

All SIHK045N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK045N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK045N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHK045N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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