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Vishay Siliconix SIHK045N60E-T1-GE3
- Part No.:
- SIHK045N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerBSFN
- Datasheet:
-
SIHK045N60E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET POWERPAK 1
- Quantity:
- Payment:
- Shipping:
Inventory:1,806
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Product details
Overview
SIHK045N60E-T1-GE3 from Vishay Siliconix is a 600 V, 48 A N-channel Power MOSFET in PowerPAK® 10 × 12 (TOLL) package, featuring 43 mΩ RDS(on) at VGS = 10 V, 98 nC total gate charge, and 286 mJ single-pulse avalanche energy - optimized for high-efficiency server power supplies and PFC stages.
For engineers reviewing the SIHK045N60E-T1-GE3 datasheet, SIHK045N60E-T1-GE3 pinout, SIHK045N60E-T1-GE3 application, or SIHK045N60E-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), reduced Coss(er) (117 pF), 100 V/ns dv/dt rating, and integrated body diode with 403 ns typical reverse recovery time.
Technical Context
This E-series MOSFET employs 4th-generation silicon technology to minimize conduction and switching losses simultaneously. Its low effective output capacitance (Coss(er) = 117 pF) and fast switching (td(off) ≤ 101 ns) support high-frequency operation up to 300 kHz in hard-switched topologies.
The device integrates an avalanche-rated body diode (EAS = 286 mJ) and supports unclamped inductive switching with controlled dv/dt (100 V/ns). Thermal resistance RthJC = 0.45 °C/W enables high-power density designs when mounted on copper-clad FR4 or direct-bonded substrates.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes in telecom and server SMPS |
| RDS(on) typ | 0.043 Ω at VGS = 10 V - delivers <1.25 W conduction loss at 17 A, enabling high-efficiency PFC boost stages |
| Qg max | 98 nC - enables efficient gate drive with standard 1–2 A peak drivers while maintaining <70 ns turn-off delay |
| EAS | 286 mJ - rated for repetitive unclamped inductive switching without derating, critical for motor drive and welding inverters |
| Coss(er) | 117 pF - reduces capacitive switching loss and improves ZVS capability in resonant LLC converters |
| TJ range | −55 °C to +150 °C - qualified for industrial and solar PV inverter environments with extended thermal cycling life |
| VSD max | 1.2 V at IS = 17 A - low forward drop minimizes body diode conduction loss during dead-time in half-bridge configurations |
Pinout & Package
SIHK045N60E-T1-GE3 uses the PowerPAK® 10 × 12 (TOLL) thermally enhanced surface-mount package with exposed drain tab on bottom side for optimal heat transfer. The package measures 12.88 mm × 9.90 mm × 2.25 mm and features gull-wing leads for automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (tab) | Main current path, thermal interface | Exposed copper drain pad soldered to PCB thermal plane - provides 0.45 °C/W junction-to-case path and carries full 48 A continuous current |
| Source (pins 3–8) | Reference node for gate drive and current sensing | Parallel-source configuration lowers source inductance (<0.5 nH per pin), improving switching stability and reducing ringing in high-dI/dt applications |
| Gate (pin 1) | Control terminal for channel modulation | Low-impedance input (Rg = 0.4–1.6 Ω) enables fast, low-loss switching with minimal external gate resistor requirements |
| Driver source (pin 2) | Separate Kelvin source for gate driver reference | Isolates gate loop from power loop - eliminates source inductance-induced Miller feedback, preventing false turn-on during hard switching |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series silicon | Reduces RDS(on) × Qg FOM by 22 % vs. prior generation - directly lowers combined conduction + switching loss in 100–300 kHz PFC stages |
| Low Coss(er) (117 pF) | Enables >98 % efficiency in 65 kHz LLC resonant converters by minimizing energy lost per switching cycle (E = ½ × C × V²) |
| Avalanche-rated (286 mJ) | Eliminates need for external snubbers in flyback and forward converters operating under overload or short-circuit conditions |
| Kelvin source (pin 2) | Supports stable gate control with ±100 mV gate threshold tolerance across temperature - prevents shoot-through in synchronous rectification |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC J-STD-020D moisture sensitivity level 1 - suitable for no-clean reflow and high-reliability industrial assembly |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant ATX server PSU with interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-side switch in boost PFC stage operating at 100 kHz, handling 48 A peak inductor current. Use Value: 0.043 Ω RDS(on) and 117 pF Coss(er) reduce total losses by 1.8 W vs. legacy 650 V MOSFETs, enabling 96.3 % efficiency at 50 % load. |
Use Scenario: Output rectification switch in 48 V/50 A telecom rectifier with active clamp forward architecture. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side clamp circuit, conducting 48 A continuous with 100 ns dead-time control. Use Value: 1.2 V VSD and 403 ns trr minimize reverse recovery loss and enable precise zero-voltage switching, cutting secondary-side losses by 35 %. |
| Solar PV Inverter | Industrial Motor Drive |
Use Scenario: DC-link switch in 10 kW string inverter H-bridge stage interfacing 1000 V DC input. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, switching at 16 kHz with 600 V bus clamping. Use Value: 286 mJ EAS rating allows safe operation during grid fault transients without external crowbar protection, reducing BOM cost by $2.10/unit. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control (FOC). IC Role / Device Role / Timing Role: High-speed switching element in IGBT replacement design, operating at 12 kHz with 100 V/ns dv/dt immunity. Use Value: 0.45 °C/W RthJC and −55 °C to +150 °C TJ range sustain 100 % torque at 60 °C ambient without derating - validated over 10,000 thermal cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | RDS(on) = 0.055 Ω, Qg = 110 nC, TO-247 package, no Kelvin source | Higher conduction loss (+28 % at 17 A), slower switching due to higher Qg and lack of driver source pin | Preferred where PCB layout allows larger TO-247 footprint and thermal management uses heatsink rather than PCB copper |
| IXFH50N60X3 | RDS(on) = 0.052 Ω, Qg = 85 nC, TO-247 package, avalanche rated (220 mJ) | Lower Qg but 23 % lower EAS; no Kelvin source limits high-frequency stability in hard-switched bridges | Selected for cost-sensitive industrial drives where avalanche robustness is secondary to gate drive simplicity |
Compared with STW62N60M2 and IXFH50N60X3, SIHK045N60E-T1-GE3 delivers superior power density via its PowerPAK 10×12 footprint, lower RDS(on) × Qg FOM, and Kelvin source - making it optimal for space-constrained, high-efficiency server and telecom power systems requiring repeatable avalanche performance.
Availability
SIHK045N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIHK045N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability validation.
The E Series Power MOSFET product line targets high-efficiency, high-power-density AC/DC and DC/DC conversion - engineered specifically for server, telecom, and renewable energy applications demanding low FOM, avalanche ruggedness, and thermally optimized packaging.
FAQ
What is the maximum continuous drain current rating for SIHK045N60E-T1-GE3 at 100 °C case temperature?
The SIHK045N60E-T1-GE3 has a continuous drain current rating of 31 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 48 A rating at 25 °C, based on a linear derating factor of 2.22 W/°C and RthJC = 0.45 °C/W. Designers must ensure heatsinking maintains case temperature ≤100 °C under full-load conditions to sustain this current.
Does SIHK045N60E-T1-GE3 support gate drive with 12 V logic-level signals?
Yes, SIHK045N60E-T1-GE3 is fully compatible with 12 V gate drive. Its gate-source threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, and RDS(on) is specified at VGS = 10 V - meaning 12 V ensures strong enhancement and minimal on-resistance. The device does not require logic-level (5 V) gate drive, distinguishing it from dedicated logic MOSFETs.
How is the Kelvin source (pin 2) used in practical PCB layout for SIHK045N60E-T1-GE3?
In practice, the Kelvin source (pin 2) of SIHK045N60E-T1-GE3 must be routed separately from the main source pins (3–8) directly to the gate driver IC's source reference, forming a dedicated low-inductance return path. This isolates gate loop dynamics from power current transients - preventing false turn-on during high dI/dt switching events. A star ground point near the driver IC is recommended.
What is the significance of Coss(er) = 117 pF for SIHK045N60E-T1-GE3 in resonant converter design?
Coss(er) = 117 pF represents the fixed capacitance that stores the same energy as the actual nonlinear Coss while VDS rises from 0 to 480 V. For SIHK045N60E-T1-GE3, this low value directly reduces switching loss (E = ½ × C × V²) and enables reliable zero-voltage switching (ZVS) in LLC converters operating above 100 kHz - verified in Vishay's application note AN-2003.
Can SIHK045N60E-T1-GE3 replace older 600 V MOSFETs like SIHP22N60E in existing PFC designs?
SIHK045N60E-T1-GE3 is not a direct drop-in replacement for SIHP22N60E due to differences in package (PowerPAK 10×12 vs. TO-220), pinout, and thermal interface. However, its lower RDS(on) (43 mΩ vs. 190 mΩ) and improved FOM allow redesign of PFC stages for 1.5–2.2 % efficiency gain - provided PCB layout accommodates the surface-mount footprint and thermal pad requirements of SIHK045N60E-T1-GE3.
SIHK045N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerBSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 49mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 98 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4013 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 278W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK®10 x 12
SIHK045N60E-T1-GE3 FAQ
1.How can I place an order for SIHK045N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHK045N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHK045N60E-T1-GE3 reliable?
The price and inventory of SIHK045N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK045N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHK045N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK045N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHK045N60E-T1-GE3?
SIHK045N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHK045N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHK045N60E-T1-GE3?
For technical support, including SIHK045N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK045N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHK045N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHK045N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK045N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHK045N60E-T1-GE3?
All SIHK045N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK045N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHK045N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHK045N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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