Vishay Siliconix SIHK055N60EF-T1GE3

Overview

SIHK055N60EF-T1GE3 from Vishay Siliconix is a 600 V, 40 A N-channel Power MOSFET in PowerPAK® 10 x 12 (TOLL) package, featuring 0.050 Ω R_DS(on) at V_GS = 10 V, 90 nC total gate charge, and fast body diode with 126 ns typical reverse recovery time. It delivers low conduction and switching losses for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHK055N60EF-T1GE3 datasheet, SIHK055N60EF-T1GE3 pinout, SIHK055N60EF-T1GE3 application, or SIHK055N60EF-T1GE3 equivalent, key selection criteria include avalanche-rated ruggedness (226 mJ E_AS), low effective output capacitance (146 pF C_o(er)), and optimized dv/dt immunity (100 V/ns) for hard-switched topologies.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology, engineered to minimize R_DS(on) × Q_g figure-of-merit (FOM) while maintaining robust unclamped inductive switching (UIS) capability. Its fast intrinsic body diode enables reduced snubber requirements in bridge-leg and synchronous rectifier configurations.

The device operates with ±30 V gate-source voltage rating and supports continuous drain current up to 40 A at T_C = 25 °C, derating linearly at 1.89 W/°C above 25 °C. Thermal resistance from junction-to-case is 0.53 °C/W, enabling high-power density mounting on thermally enhanced PCBs or heatsinks.

Key Specifications

Pinout & Package

Package: PowerPAK® 10 x 12 (TOLL) - surface-mount, high-current, low-inductance package with exposed drain tab for thermal and electrical performance. Dimensions: 12.88 mm × 9.90 mm × 2.25 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW62N60M2 and IXFH50N60P, the SIHK055N60EF-T1GE3 offers optimal balance of low R_DS(on), moderate Q_g, and industry-leading C_o(er) in a compact surface-mount package-making it ideal for high-density, high-efficiency 600 V power conversion where thermal management and layout area are constrained.

Availability

SIHK055N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHK055N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The EF Series - including SIHK055N60EF-T1GE3 - was designed for high-efficiency, high-reliability 600 V power conversion in server, telecom, and renewable energy systems where low switching loss, fast body diode recovery, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHK055N60EF-T1GE3 at 100 °C case temperature?

The SIHK055N60EF-T1GE3 supports 26 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the PowerPAK® 10 x 12 package and ensures safe operation under sustained high-power conditions. The SIHK055N60EF-T1GE3 maintains R_DS(on) stability across this range, with normalized on-resistance rising to ~1.8× its 25 °C value at 150 °C junction temperature.

Does SIHK055N60EF-T1GE3 have a Kelvin source connection, and how is it implemented?

Yes, the SIHK055N60EF-T1GE3 features a dedicated Kelvin source terminal (Pin 2) separate from the main source pins (Pins 3–8). This design isolates gate drive return from high-current source paths, minimizing source inductance-induced gate voltage distortion during fast switching. The SIHK055N60EF-T1GE3 uses this configuration to maintain precise V_GS control and prevent spurious turn-on in high-di/dt applications like PFC boost stages.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHK055N60EF-T1GE3, and why does it matter?

The SIHK055N60EF-T1GE3 exhibits a typical Q_rr of 0.8 μC at T_J = 25 °C, IS = 16 A, and di/dt = 100 A/μs. This low value directly reduces switching loss and EMI generation during body diode commutation in bridge-leg and synchronous rectifier circuits. Because Q_rr contributes significantly to total turn-off loss, the SIHK055N60EF-T1GE3's low Q_rr enhances efficiency in hard-switched topologies operating above 100 kHz.

Can SIHK055N60EF-T1GE3 be used in avalanche-mode operation, and what is its rated energy?

Yes, the SIHK055N60EF-T1GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ at T_J = 25 °C. This specification is validated per JEDEC standards and enables robust operation during transient overloads - such as transformer saturation or short-circuit events - without requiring external snubbers. The SIHK055N60EF-T1GE3 leverages this ruggedness in industrial motor drives and UPS systems where fault tolerance is critical.

What is the gate threshold voltage range for SIHK055N60EF-T1GE3, and how does it affect drive circuit design?

The SIHK055N60EF-T1GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at I_D = 250 μA. This relatively wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement and minimal R_DS(on) variation across production lots. Drive circuits must deliver clean, well-regulated 10–15 V gate signals with low impedance (<1 Ω) to avoid partial turn-on and excessive heating. The SIHK055N60EF-T1GE3's specified V_GS(th) range is tightly controlled within Vishay's EF process, ensuring predictable turn-on behavior in high-volume manufacturing.