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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK055N60E-T1-GE3

Name: SIHK055N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHK055N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK055N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK055N60E-T1-GE3.pdf

Description:: E SERIES POWER MOSFET POWERPAK 1

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Product details

Overview

SIHK055N60E-T1-GE3 from Vishay Siliconix is a 600 V, 42 A N-channel Power MOSFET in PowerPAK® 10 x 12 package, featuring 0.049 Ω R_DS(on) at 10 V_GS, 81 nC total gate charge, and 226 mJ single-pulse avalanche energy-designed for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHK055N60E-T1-GE3 datasheet, SIHK055N60E-T1-GE3 pinout, SIHK055N60E-T1-GE3 application, or SIHK055N60E-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) of 102 pF, 100 V/ns dv/dt rating, and avalanche-rated operation in hard-switched SMPS topologies.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for switching loss reduction in continuous conduction mode (CCM) PFC and LLC resonant converters. Its low effective output capacitance (Co(er) = 102 pF) and fast reverse recovery (Q_rr = 6.4 μC, t_rr = 408 ns) enable high-frequency operation up to 300 kHz with minimal dead-time penalty.

The device integrates a robust body diode rated for 42 A continuous source-drain current and 111 A pulsed current, supporting synchronous rectification and bidirectional energy transfer in isolated DC-DC stages. Thermal resistance R_thJC = 0.53 °C/W ensures efficient heat extraction via the exposed drain tab in high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for voltage transients in telecom rectifiers
R_DS(on) typ	0.049 Ω @ 10 V_GS, 16 A - enables <1.3 W conduction loss at 16 A in 12 V output rails
Q_g max	81 nC - determines gate drive power requirement (~1.6 mW per MHz at 10 V swing)
E_AS	226 mJ - withstands unclamped inductive switching events without failure in motor drive H-bridges
C_oss(er)	102 pF - reduces turn-off energy loss (E_off ∝ C_oss × V_DS²) in ZVS circuits
t_rr	408 ns typ - minimizes commutation loss and diode-induced shoot-through risk in half-bridge PFC
R_thJC	0.53 °C/W - allows 236 W power dissipation with ≤125 °C junction rise above 25 °C case

Pinout & Package

PowerPAK® 10 x 12 (TOLL) package with exposed drain tab on bottom side for thermal and electrical connection; 8-pin configuration with source pins distributed across pins 3–8, gate on pin 1, driver source on pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring 10 V threshold; connects to gate driver IC output
Pin 2	Driver Source	Local return path for gate driver loop-critical for minimizing switching noise and dV/dt-induced false turn-on
Pins 3–8	Source	Parallel low-inductance source connection; must be routed to power ground plane with minimal loop area
Drain Tab	Drain	Exposed copper pad on underside-must be soldered to PCB thermal pad for both electrical conduction and heat sinking

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.97 Ω·nC - directly improves efficiency in 100–300 kHz PFC stages vs. prior-gen devices
Avalanche-rated operation	226 mJ single-pulse E_AS - eliminates need for external snubbers in flyback and forward converters
Reduced Co(er)	102 pF - cuts stored output energy by >30 % vs. standard 600 V MOSFETs, easing ZVS implementation
Fast body diode	t_rr = 408 ns, Q_rr = 6.4 μC - lowers recovery loss and EMI in bridge-leg commutation

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant ATX power supply with interleaved PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-side switching element handling 42 A peak current at 600 V DC bus, operating at 150 kHz with zero-voltage switching. Use Value: Low Q_g and Co(er) reduce gate drive loss and turn-off energy, enabling >96 % full-load efficiency while maintaining thermal margin.	Use Scenario: Output rectification in -48 V telecom rectifier module with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped topology, conducting 35 A continuous with 100 kHz PWM control. Use Value: 0.049 Ω R_DS(on) cuts conduction loss by 40 % vs. Schottky solutions, eliminating forced-air cooling in 1U chassis.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in 5 kW string inverter with two-level NPC topology and 16 kHz carrier frequency. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg, handling 30 A RMS with 600 V blocking. Use Value: Avalanche rating and 100 V/ns dv/dt tolerance prevent failure during grid fault transients and stray inductance spikes.	Use Scenario: Brake chopper switch in 7.5 kW servo drive regenerative braking circuit with 200 V DC link. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during overvoltage events, conducting 111 A pulsed current. Use Value: 226 mJ E_AS rating absorbs kinetic energy from motor deceleration without external clamping components.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant ATX power supply with interleaved PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-side switching element handling 42 A peak current at 600 V DC bus, operating at 150 kHz with zero-voltage switching.

Use Value: Low Q_g and Co(er) reduce gate drive loss and turn-off energy, enabling >96 % full-load efficiency while maintaining thermal margin.

Use Scenario: Output rectification in -48 V telecom rectifier module with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped topology, conducting 35 A continuous with 100 kHz PWM control.

Use Value: 0.049 Ω R_DS(on) cuts conduction loss by 40 % vs. Schottky solutions, eliminating forced-air cooling in 1U chassis.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in 5 kW string inverter with two-level NPC topology and 16 kHz carrier frequency.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg, handling 30 A RMS with 600 V blocking.

Use Value: Avalanche rating and 100 V/ns dv/dt tolerance prevent failure during grid fault transients and stray inductance spikes.

Use Scenario: Brake chopper switch in 7.5 kW servo drive regenerative braking circuit with 200 V DC link.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during overvoltage events, conducting 111 A pulsed current.

Use Value: 226 mJ E_AS rating absorbs kinetic energy from motor deceleration without external clamping components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 92 nC, TO-247 package	Larger footprint and higher thermal resistance (R_thJC = 0.65 °C/W); requires heatsink	Preferred where legacy TO-247 layout exists and board space permits larger thermal solution
IXFH50N60P	R_DS(on) = 0.065 Ω, Q_g = 110 nC, TO-247AC package	Higher conduction and switching losses; no specified Co(er) or E_AS rating	Acceptable for lower-frequency (<100 kHz) industrial SMPS where avalanche robustness is not critical

Compared with STW62N60M2 and IXFH50N60P, SIHK055N60E-T1-GE3 delivers superior power density via its PowerPAK 10x12 package, lower switching loss due to 13 % lower Q_g, and verified avalanche capability essential for grid-connected inverters and telecom systems.

Availability

SIHK055N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHK055N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-frequency power conversion in datacenter, telecom, and renewable energy systems-emphasizing low FOM, avalanche ruggedness, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHK055N60E-T1-GE3 at 100 °C case temperature?

The SIHK055N60E-T1-GE3 has a continuous drain current rating of 27 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 10 x 12 package and ensures safe operation under sustained load conditions without exceeding the 150 °C maximum junction temperature. The SIHK055N60E-T1-GE3 maintains this rating with no additional derating required when mounted on a 1" x 1" FR4 board per datasheet test condition.

Does SIHK055N60E-T1-GE3 support gate drive voltages below 10 V, and what is its gate threshold range?

Yes, the SIHK055N60E-T1-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at T_J = 25 °C, enabling partial enhancement at logic-level gate drives. However, full enhancement and specified R_DS(on) performance require V_GS ≥ 10 V. The SIHK055N60E-T1-GE3 exhibits negligible conduction loss increase up to V_GS = 12 V, making it compatible with standard 12 V gate drivers used in industrial SMPS designs.

How does the body diode performance of SIHK055N60E-T1-GE3 compare to standard 600 V MOSFETs?

The SIHK055N60E-T1-GE3 features a fast, low-loss body diode with t_rr = 408 ns and Q_rr = 6.4 μC at T_J = 25 °C-approximately 35 % lower Q_rr than typical 600 V MOSFETs. This reduces reverse recovery loss and associated EMI in bridge configurations. The SIHK055N60E-T1-GE3 also supports 42 A continuous source-drain current, matching its rated drain current for bidirectional operation in synchronous rectification.

Is SIHK055N60E-T1-GE3 lead-free and halogen-free, and what is its RoHS compliance status?

Yes, SIHK055N60E-T1-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the datasheet. It complies with EU RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912). The "-GE3" suffix explicitly denotes green, lead-free, and halogen-free construction, with termination finish meeting JEDEC J-STD-020 moisture sensitivity level 3 requirements.

What thermal interface considerations apply to the drain tab of SIHK055N60E-T1-GE3?

The drain tab of SIHK055N60E-T1-GE3 must be soldered to a dedicated PCB thermal pad using minimum 0.1 mm solder paste thickness and full coverage to achieve the specified R_thJC = 0.53 °C/W. The recommended land pattern (document 92489) specifies 12.88 mm × 9.90 mm copper area with 8× thermal vias (0.55 mm diameter) to inner ground planes. Inadequate solder joint quality or undersized pad increases thermal resistance and risks junction overheating under 236 W dissipation.

SIHK055N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 56mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3504 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 236W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK055N60E-T1-GE3 FAQ

1.How can I place an order for SIHK055N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK055N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK055N60E-T1-GE3 reliable?

The price and inventory of SIHK055N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK055N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHK055N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK055N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK055N60E-T1-GE3?

SIHK055N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK055N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK055N60E-T1-GE3?

For technical support, including SIHK055N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK055N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHK055N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK055N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK055N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHK055N60E-T1-GE3?

All SIHK055N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK055N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK055N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHK055N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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