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Vishay Siliconix SIHK065N60E-T1-GE3
- Part No.:
- SIHK065N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerBSFN
- Datasheet:
-
SIHK065N60E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET POWERPAK 1
- Quantity:
- Payment:
- Shipping:
Inventory:2,050
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Product details
Overview
SIHK065N60E-T1-GE3 from Vishay Siliconix is a 600 V, 34 A N-channel Power MOSFET in PowerPAK® 10 x 12 (TOLL) package, featuring RDS(on) = 0.059 Ω at VGS = 10 V, Qg = 48 nC (typ), and avalanche-rated EAS = 226 mJ. It delivers low conduction and switching losses for high-efficiency server power supplies, PFC stages, and PV inverters.
For engineers reviewing the SIHK065N60E-T1-GE3 datasheet, SIHK065N60E-T1-GE3 pinout, SIHK065N60E-T1-GE3 application, or SIHK065N60E-T1-GE3 equivalent, key selection criteria include its 600 V VDS, 0.059 Ω RDS(on), 72 nC Qg max, 0.65 °C/W RthJC, and PowerPAK 10 × 12 thermal performance in high-power SMPS designs.
Technical Context
This 4th-generation E-series MOSFET uses optimized trench-gate silicon technology to minimize RDS(on) × Qg figure-of-merit (FOM) and effective output capacitance Coss(er) = 88 pF. Its low Ciss = 2946 pF and Crss = 5 pF support fast, low-loss hard-switching operation up to 480 V bus voltages.
The device integrates a robust body diode with trr = 346 ns (typ), Qrr = 4.7 μC, and VSD = 1.2 V at 15 A, enabling reliable synchronous rectification and freewheeling in continuous-conduction-mode topologies. Its 100 V/ns dv/dt rating ensures noise immunity in high-speed gate drive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports 400 V AC input PFC and 480 V DC bus systems with 20 % margin |
| RDS(on) max | 0.068 Ω at 15 A, 25 °C - Enables <1.5 W conduction loss at 30 A in TO-247-equivalent thermal envelope |
| Qg max | 72 nC - Determines gate drive power requirement (~1.4 mW per MHz at 10 V swing) |
| EAS | 226 mJ - Withstands unclamped inductive switching stress without failure under defined test conditions |
| RthJC | 0.65 °C/W - Enables 192 W power dissipation with ≤125 °C case temperature rise above ambient |
| Coss(er) | 88 pF - Low energy-related output capacitance reduces turn-off loss in hard-switched converters |
| tr/tf | 33/9 ns - Fast switching transitions support >200 kHz operation with controlled EMI |
Pinout & Package
SIHK065N60E-T1-GE3 is housed in a thermally enhanced PowerPAK® 10 × 12 (TOLL) package with exposed drain tab on bottom side for PCB heatsinking. The 8-pin configuration features source-connected pins (3–8), gate on pin 1, and driver source on pin 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (tab) | Main current path (high-side switch node) | Exposed copper tab soldered to large PCB copper pour for <0.65 °C/W junction-to-case thermal path |
| Pin 1 (Gate) | Control terminal for channel modulation | Low-impedance gate input requiring <10 Ω series resistance to damp ringing during 10 V drive |
| Pin 2 (Driver Source) | Reference return for gate driver IC | Separate Kelvin source connection minimizes gate loop inductance and improves switching stability |
| Pins 3–8 (Source) | Power return path for main current | Parallel source terminals reduce source inductance and improve current sharing in paralleled configurations |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series trench MOSFET | Optimized cell pitch and gate oxide thickness deliver 22 % lower RDS(on) × Qg vs. prior generation |
| Avalanche energy rated (UIS) | 226 mJ single-pulse rating enables robustness against transient overloads without external snubbers |
| Low Coss(er) = 88 pF | Reduces turn-off switching loss by ~35 % compared to standard 600 V MOSFETs with similar RDS(on) |
| PowerPAK 10 × 12 (TOLL) package | 0.65 °C/W RthJC and 192 W PD exceed TO-247-3L thermal capability while reducing footprint by 50 % |
| Body diode trr = 346 ns (typ) | Enables reliable zero-voltage switching (ZVS) initiation in LLC resonant converters at 100–300 kHz |
Applications
| Server Power Supply | PV Inverter |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, high-current primary switch operating at 100–200 kHz with 480 V DC bus. Use Value: 0.059 Ω RDS(on) and 48 nC Qg enable >96.5 % efficiency at full load while maintaining <105 °C junction temperature. |
Use Scenario: DC-link switching stage in string-level 10 kW solar inverter using three-phase NPC topology. IC Role / Device Role / Timing Role: 600 V bridge leg switch handling 25 A RMS with bidirectional current flow. Use Value: Avalanche rating and low Coss(er) ensure reliability during grid fault transients and reduce switching loss by 18 % vs. legacy 600 V MOSFETs. |
| Industrial Motor Drive | Fluorescent Ballast |
Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive with field-oriented control. IC Role / Device Role / Timing Role: IGBT replacement in 6–12 kHz PWM-driven half-bridge legs with regenerative braking. Use Value: Body diode Qrr = 4.7 μC and VSD = 1.2 V minimize commutation loss and voltage spikes during regeneration. |
Use Scenario: Resonant half-bridge switch in electronic fluorescent ballast powering 40–60 W lamps. IC Role / Device Role / Timing Role: High-frequency (40–70 kHz) resonant switch with soft-start and lamp ignition pulses. Use Value: 100 V/ns dv/dt rating and low Crss = 5 pF prevent false triggering during rapid VDS transitions during lamp strike. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 62 A, RDS(on) = 0.055 Ω, Qg = 85 nC, TO-247 package | Higher peak current but larger footprint and 1.2 °C/W RthJC; requires larger heatsink | Select when higher ID rating is needed and board space allows TO-247 mounting |
| IXFH60N60X | 600 V, 60 A, RDS(on) = 0.052 Ω, Qg = 120 nC, TO-247 package | Lower RDS(on) but 2.5× higher Qg; gate drive loss dominates at >100 kHz | Select only for low-frequency (<50 kHz), high-current applications where conduction loss is critical |
Compared with STW62N60M2 and IXFH60N60X, SIHK065N60E-T1-GE3 offers superior thermal density (0.65 °C/W vs. ≥1.2 °C/W), smaller footprint, and optimized FOM for high-frequency SMPS-making it preferred for space-constrained, efficiency-critical 100–300 kHz designs.
Availability
SIHK065N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for SIHK065N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The E Series Power MOSFET product line targets high-efficiency, high-frequency switched-mode power conversion in datacenter, renewable energy, and industrial systems-designed to replace older planar devices with trench-based optimization of RDS(on) × Qg.
FAQ
What is the maximum continuous drain current rating for SIHK065N60E-T1-GE3 at 100 °C case temperature?
The SIHK065N60E-T1-GE3 supports 21 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 10 × 12 package and ensures safe operation within its 150 °C maximum junction temperature. The 34 A rating applies only at TC = 25 °C.
Does SIHK065N60E-T1-GE3 have a Kelvin source connection, and how is it implemented?
Yes, SIHK065N60E-T1-GE3 implements a Kelvin source via Pin 2 (Driver Source), separate from the main source terminals (Pins 3–8). This dedicated low-inductance return path for the gate driver minimizes voltage overshoot during switching and improves control loop stability-critical for high dV/dt applications like PFC and resonant converters.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHK065N60E-T1-GE3, and under what conditions is it measured?
The SIHK065N60E-T1-GE3 body diode has a typical Qrr of 4.7 μC, measured at TJ = 25 °C, IF = 15 A, di/dt = 100 A/μs, and VR = 25 V. This value directly impacts commutation loss in hard-switched topologies and is significantly lower than many competing 600 V MOSFETs due to optimized epitaxial layer design.
Can SIHK065N60E-T1-GE3 be used in avalanche mode, and what is its rated single-pulse energy?
Yes, SIHK065N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (EAS) of 226 mJ under standardized test conditions (VDD = 120 V, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A). This rating validates its robustness in circuits subject to inductive transients or short-circuit events.
What is the gate threshold voltage range (VGS(th)) for SIHK065N60E-T1-GE3, and why does it matter for gate drive design?
The SIHK065N60E-T1-GE3 has a VGS(th) range of 3.0 V to 5.0 V at ID = 250 μA. This relatively wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature extremes. Driving below 8 V risks incomplete turn-on and excessive RDS(on) variation, especially at elevated temperatures.
SIHK065N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerBSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 68mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2946 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 192W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK®10 x 12
SIHK065N60E-T1-GE3 FAQ
1.How can I place an order for SIHK065N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHK065N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHK065N60E-T1-GE3 reliable?
The price and inventory of SIHK065N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK065N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHK065N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK065N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHK065N60E-T1-GE3?
SIHK065N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHK065N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHK065N60E-T1-GE3?
For technical support, including SIHK065N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK065N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHK065N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHK065N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK065N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHK065N60E-T1-GE3?
All SIHK065N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK065N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHK065N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHK065N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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