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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK075N60EF-T1GE3

Name: SIHK075N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHK075N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK075N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK075N60EF-T1GE3.pdf

Description:: E SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHK075N60EF-T1GE3 from Vishay Siliconix is a 600 V, 33 A N-channel Power MOSFET in PowerPAK® 10 x 12 (TOLL) package, featuring 0.061 Ω R_DS(on) at V_GS = 10 V, 72 nC total gate charge, and fast body diode with 111 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK075N60EF-T1GE3 datasheet, SIHK075N60EF-T1GE3 pinout, SIHK075N60EF-T1GE3 application, or SIHK075N60EF-T1GE3 equivalent, key selection criteria include avalanche-rated ruggedness (226 mJ E_AS), low C_oss(er) (122 pF), 100 V/ns dv/dt capability, and thermal resistance of 0.65 °C/W (junction-to-case).

Technical Context

This EF-series MOSFET employs 4th-generation E-series silicon technology optimized for hard-switched and resonant topologies. Its low R_DS(on) × Q_g figure-of-merit (≈4.35 Ω·nC) and reduced effective output capacitance enable high-frequency operation while maintaining low switching loss.

The integrated fast-recovery body diode supports synchronous rectification and ZVS transitions. With 1.2 V forward voltage at 15 A and 1.4 μC Q_rr, it minimizes commutation loss in bridge-leg configurations used in PV inverters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in industrial PFC stages.
R_DS(on) typ	0.061 Ω @ V_GS = 10 V - Enables ≤2.2 W conduction loss at 15 A continuous drain current (T_J = 150 °C).
Q_g max	72 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers at ≤500 kHz switching.
E_AS	226 mJ - Rated unclamped inductive switching energy ensures robustness against load dump or short-circuit events without derating.
C_oss(er)	122 pF - Energy-equivalent output capacitance directly impacts turn-off loss and ZVS initiation voltage threshold.
V_SD max	1.2 V @ I_S = 15 A - Low body diode forward drop reduces freewheeling loss in half-bridge LLC and phase-shifted full-bridge converters.
trr	111 ns typ - Fast reverse recovery enables reliable operation in high-frequency synchronous rectification without shoot-through risk.

Pinout & Package

SIHK075N60EF-T1GE3 uses the PowerPAK® 10 x 12 (TOLL) surface-mount package with exposed drain tab on the bottom side for enhanced thermal performance. The package measures 12.88 mm × 9.90 mm × 2.25 mm and features gull-wing leads for automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current power return path	Exposed copper tab soldered to PCB thermal pad; provides primary heat transfer path (R_thJC = 0.65 °C/W).
Pin 1	Gate	Control terminal requiring <10 V threshold (3.0–5.0 V); low input capacitance (C_iss = 2954 pF) eases gate driver selection.
Pins 2–8	Source	Parallel-source configuration lowers source inductance and improves di/dt immunity during switching transitions.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	0.061 Ω × 72 nC = 4.35 Ω·nC - Reduces combined conduction + switching loss vs. legacy 600 V MOSFETs by >25 % at 100 kHz.
Avalanche-rated (UIS)	226 mJ single-pulse energy - Eliminates need for external snubbers in inductive load switching applications like welding inverters.
Fast body diode	trr = 111 ns, Q_rr = 0.7–1.4 μC - Enables zero-voltage switching in resonant topologies without adding external SiC Schottky diodes.
Low C_oss(er)	122 pF - Reduces turn-off loss and improves light-load efficiency in PFC boost stages operating above 100 kHz.
High dv/dt immunity	100 V/ns (T_J = 125 °C) - Ensures noise-free gate triggering in high-di/dt environments such as motor drive half-bridges.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter in 3.3 kW front-end AC/DC unit with active PFC operating at 100–200 kHz. IC Role / Device Role / Timing Role: Main switching device handling 33 A RMS input current; synchronized to interleaved control IC timing. Use Value: 0.061 Ω R_DS(on) and 122 pF C_oss(er) reduce total loss by 1.8 W per device versus prior-gen 600 V MOSFETs at 150 kHz.	Use Scenario: Primary-side switch in 1.5 kW isolated DC/DC brick for 48 V telecom distribution. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; body diode conducts during lagging-leg freewheeling. Use Value: 111 ns trr and 1.2 V V_SD minimize dead-time loss and prevent cross-conduction, improving efficiency by 0.7 % at full load.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC-link switching in string-level 5 kW transformerless PV inverter with bipolar modulation. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; subjected to repetitive 600 V blocking and 30 A peak current. Use Value: 226 mJ E_AS rating withstands grid fault transients without failure; 0.65 °C/W R_thJC enables compact heatsink design.	Use Scenario: Inverter leg switch in 7.5 kW servo drive operating at 16 kHz PWM with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch conducting bidirectional current; body diode handles regeneration current during deceleration. Use Value: 1.4 μC Q_rr and 50 V/ns reverse diode dv/dt rating ensure clean commutation under 100 A/μs di/dt conditions.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter in 3.3 kW front-end AC/DC unit with active PFC operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Main switching device handling 33 A RMS input current; synchronized to interleaved control IC timing.

Use Value: 0.061 Ω R_DS(on) and 122 pF C_oss(er) reduce total loss by 1.8 W per device versus prior-gen 600 V MOSFETs at 150 kHz.

Use Scenario: Primary-side switch in 1.5 kW isolated DC/DC brick for 48 V telecom distribution.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; body diode conducts during lagging-leg freewheeling.

Use Value: 111 ns trr and 1.2 V V_SD minimize dead-time loss and prevent cross-conduction, improving efficiency by 0.7 % at full load.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC-link switching in string-level 5 kW transformerless PV inverter with bipolar modulation.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; subjected to repetitive 600 V blocking and 30 A peak current.

Use Value: 226 mJ E_AS rating withstands grid fault transients without failure; 0.65 °C/W R_thJC enables compact heatsink design.

Use Scenario: Inverter leg switch in 7.5 kW servo drive operating at 16 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch conducting bidirectional current; body diode handles regeneration current during deceleration.

Use Value: 1.4 μC Q_rr and 50 V/ns reverse diode dv/dt rating ensure clean commutation under 100 A/μs di/dt conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 85 nC, TO-247 package, no specified E_AS rating	Higher gate drive loss due to +18 % Q_g; requires larger heatsink due to higher R_thJA	Preferred where board space allows TO-247 and avalanche rating is not required.
IXFH60N60X3	R_DS(on) = 0.058 Ω, Q_g = 62 nC, TO-247 package, E_AS = 190 mJ	Lower Q_g improves high-frequency efficiency but lower avalanche margin reduces fault tolerance.	Selected when prioritizing switching speed over ruggedness in well-protected systems.

Compared with STW62N60M2 and IXFH60N60X3, SIHK075N60EF-T1GE3 offers superior thermal performance (0.65 °C/W vs. ≥1.2 °C/W), tighter R_DS(on) distribution, and highest E_AS rating-making it optimal for space-constrained, high-reliability PFC and inverter designs.

Availability

SIHK075N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHK075N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The EF Series targets high-frequency, high-efficiency power conversion in enterprise and industrial applications-designed specifically to replace older planar MOSFETs with trench-based silicon offering lower FOM and faster body diodes.

FAQ

What is the maximum continuous drain current rating for SIHK075N60EF-T1GE3 at 100 °C case temperature?

The SIHK075N60EF-T1GE3 has a continuous drain current rating of 21 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 33 A rating at 25 °C case temperature, based on its 1.54 W/°C linear derating factor and 192 W maximum power dissipation limit.

Does SIHK075N60EF-T1GE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHK075N60EF-T1GE3 is rated for 226 mJ single-pulse avalanche energy (E_AS). Per the datasheet note b, testing uses V_DD = 120 V, starting junction temperature of 25 °C, inductive load L = 28.2 mH, gate resistor R_g = 25 Ω, and avalanche current I_AS = 4.0 A-validating ruggedness under unclamped inductive switching stress.

What is the gate threshold voltage range for SIHK075N60EF-T1GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHK075N60EF-T1GE3 is specified from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with standard 10 V gate drive while allowing margin for logic-level controllers; however, full enhancement requires ≥10 V to achieve the rated 0.061 Ω R_DS(on).

How does the PowerPAK® 10 x 12 package of SIHK075N60EF-T1GE3 improve thermal performance compared to TO-220?

The PowerPAK® 10 x 12 (TOLL) package of SIHK075N60EF-T1GE3 achieves R_thJC = 0.65 °C/W-over 3× better than typical TO-220 packages (~2.0–2.5 °C/W). Its exposed drain tab and low-profile construction enable direct thermal coupling to PCB copper, reducing junction temperature rise by up to 45 °C at 33 A continuous current.

Is SIHK075N60EF-T1GE3 suitable for use in synchronous rectification topologies, and what body diode parameters support this?

Yes, SIHK075N60EF-T1GE3 is suitable for synchronous rectification due to its fast body diode: t_rr = 111 ns (typ), Q_rr = 0.7–1.4 μC, and V_SD = 1.2 V at 15 A. These values minimize reverse recovery loss and forward conduction loss during freewheeling, enabling efficient operation in LLC and phase-shifted full-bridge converters without external diodes.

SIHK075N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 71mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2954 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK075N60EF-T1GE3 FAQ

1.How can I place an order for SIHK075N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK075N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK075N60EF-T1GE3 reliable?

The price and inventory of SIHK075N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK075N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHK075N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK075N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK075N60EF-T1GE3?

SIHK075N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK075N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK075N60EF-T1GE3?

For technical support, including SIHK075N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK075N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHK075N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK075N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK075N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHK075N60EF-T1GE3?

All SIHK075N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK075N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK075N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHK075N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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