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Vishay Siliconix SIHK075N60E-T1-GE3
- Part No.:
- SIHK075N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerBSFN
- Datasheet:
-
SIHK075N60E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET POWERPAK 1
- Quantity:
- Payment:
- Shipping:
Inventory:2,025
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Product details
Overview
SIHK075N60E-T1-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel Power MOSFET in PowerPAK® 10 x 12 (TOLL) package, featuring 70 mΩ RDS(on) at VGS = 10 V, 41 nC typical Qg, and 204 mJ single-pulse avalanche energy - optimized for high-efficiency server power supplies and PFC stages.
For engineers reviewing the SIHK075N60E-T1-GE3 datasheet, SIHK075N60E-T1-GE3 pinout, SIHK075N60E-T1-GE3 application, or SIHK075N60E-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), Co(er) of 75 pF, 100 V/ns dv/dt rating, and validated performance in 480 V DC-link switching with 13 A load current.
Technical Context
This E-series MOSFET employs 4th-generation trench-gate silicon technology to reduce conduction and switching losses simultaneously. Its low effective output capacitance (Co(er) = 75 pF) and fast switching (td(off) ≤ 90 ns) enable high-frequency operation in hard-switched topologies without sacrificing ruggedness.
The device integrates an avalanche-rated body diode with trr = 317–816 ns and Qrr = 4.2–12.8 μC, supporting reliable operation in continuous conduction mode (CCM) PFC and resonant converters where reverse recovery behavior critically impacts EMI and efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V AC input rectified to 560 V DC bus with 15 % margin for voltage spikes in telecom/server SMPS |
| RDS(on) typ | 0.070 Ω at VGS = 10 V, ID = 13 A - enables <1.2 W conduction loss at 13 A, critical for thermal management in compact 1U power supplies |
| Qg max | 62 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers at 100–300 kHz switching |
| EAS | 204 mJ - ensures single-pulse unclamped inductive switching survivability in PFC boost inductors up to 28.2 mH |
| Coss(er) | 75 pF - reduces turn-off energy loss (Eoff ∝ Coss × VDS²) in high-voltage hard-switching applications |
| tr/tf | 26–52 ns / 12–24 ns - supports clean voltage transitions with minimal overlap loss in synchronous rectification and LLC primary switches |
| TJ range | −55 °C to +150 °C - qualified for industrial ambient conditions and high-power density designs requiring extended junction temperature operation |
Pinout & Package
Package: PowerPAK® 10 x 12 (TOLL) - thermally enhanced surface-mount package with exposed drain tab on bottom side for direct PCB copper thermal pad attachment; 12.88 mm × 9.90 mm footprint per Vishay DWG 3013.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Exposed metal tab connects directly to PCB thermal pad; carries full load current and dissipates >90 % of heat via case-to-PCB conduction |
| Pin 1 | Gate | Low-impedance control terminal; requires <1.6 Ω gate resistance (Rg) to limit dv/dt-induced false turn-on during high-speed switching |
| Pins 2–8 | Source | Parallel-source configuration lowers source inductance and improves di/dt immunity; pins 2–8 are internally bonded and electrically common |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series trench MOSFET | Delivers 25 % lower RDS(on) × Qg FOM vs. prior generation, enabling higher efficiency at 200–500 kHz switching frequencies |
| Avalanche energy rated (UIS) | 204 mJ single-pulse rating allows robust operation under transient overloads without external snubbers in PFC and welder inverters |
| Low Co(er) = 75 pF | Reduces turn-off switching loss by ~30 % compared to standard 600 V MOSFETs with similar RDS(on), improving light-load efficiency |
| dv/dt ruggedness = 100 V/ns | Prevents spurious turn-on in high-dV/dt environments such as motor drives and induction heating inverters without added gate clamping |
| Body diode trr = 317 ns (typ) | Enables stable operation in CCM boost PFC with reduced diode recovery noise and lower EMI filter cost |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier with 380–400 V DC input. IC Role / Device Role / Timing Role: High-side hard-switched MOSFET in continuous conduction mode (CCM) boost PFC stage operating at 120 kHz. Use Value: 70 mΩ RDS(on) and 41 nC Qg achieve >96.2 % PFC efficiency at full load while maintaining TJ < 135 °C on 2 oz Cu PCB. |
Use Scenario: Main switch in 2 kW front-end AC/DC converter for 5G base station power system. IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge (PSFB) topology with ZVS-assisted turn-on. Use Value: 100 V/ns dv/dt rating and low Qgd/Qgs ratio ensure reliable ZVS across line/load variations without gate oscillation. |
| Solar PV Inverter | Industrial Motor Drive |
Use Scenario: DC-link switch in string-level 5–10 kW photovoltaic inverter with 800 V DC bus. IC Role / Device Role / Timing Role: High-voltage switch in three-level NPC (neutral-point-clamped) inverter leg. Use Value: 600 V VDS rating with 150 °C TJ max supports 800 V DC bus with 20 % overvoltage margin and extended outdoor operating life. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with 400 V AC input. IC Role / Device Role / Timing Role: Low-inductance source-connected MOSFET in 3-phase IGBT replacement design. Use Value: Parallel-source pins (2–8) reduce source loop inductance to <1.5 nH, minimizing voltage overshoot during 5 kA/μs di/dt commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW75N60DM6 | RDS(on) = 0.075 Ω, Qg = 65 nC, TO-247 package, no Co(er) spec | Higher RDS(on) and larger thermal resistance (RthJC = 0.95 °C/W) limits power density in space-constrained designs | Preferred for legacy through-hole layouts or where mechanical mounting torque is critical; not drop-in for PowerPAK 10x12 footprints |
| IXFH75N60X3 | RDS(on) = 0.072 Ω, Qg = 58 nC, TO-247, specified Co(er) = 82 pF | Higher Co(er) increases turn-off loss; lacks avalanche rating (EAS not specified) | Better for soft-switched applications where avalanche stress is absent; requires derating in hard-switched PFC due to missing UIS validation |
Compared with STW75N60DM6 and IXFH75N60X3, SIHK075N60E-T1-GE3 delivers superior thermal performance via PowerPAK 10x12's 0.75 °C/W RthJC, verified avalanche ruggedness for unclamped inductive loads, and lowest Co(er) among 600 V 75 A-class MOSFETs - making it optimal for high-density, high-reliability server and telecom power systems.
Availability
SIHK075N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for SIHK075N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The E Series Power MOSFET product line targets high-efficiency, high-power-density AC/DC and DC/DC conversion in datacenter, telecom, and renewable energy systems - engineered for low FOM, fast switching, and robust avalanche capability.
FAQ
What is the maximum continuous drain current rating for SIHK075N60E-T1-GE3 at 100 °C case temperature?
The SIHK075N60E-T1-GE3 has a continuous drain current rating of 18 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 29 A rating at 25 °C case temperature, based on a linear derating factor of 1.33 W/°C and RthJC = 0.75 °C/W. Designers must verify PCB copper area and airflow to sustain this current in actual SIHK075N60E-T1-GE3 implementations.
Does SIHK075N60E-T1-GE3 support logic-level gate drive?
No, SIHK075N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage VGS(th) ranges from 3.0 V to 5.0 V, and it is characterized for RDS(on) at VGS = 10 V. Driving SIHK075N60E-T1-GE3 with only 5 V gate voltage results in significantly elevated RDS(on) and conduction loss - a 10 V or higher gate drive is required to achieve the specified 0.070 Ω on-resistance and full 29 A current capability.
What is the significance of Co(er) = 75 pF for SIHK075N60E-T1-GE3 in power supply design?
Co(er) = 75 pF represents the effective output capacitance that yields the same stored energy as the actual nonlinear Coss when VDS rises from 0 to 480 V. For SIHK075N60E-T1-GE3, this low value directly reduces turn-off switching loss (Eoff ≈ ½ × Coss × VDS²), enabling higher efficiency in hard-switched topologies like boost PFC and LLC primary stages without increasing gate drive complexity.
Can SIHK075N60E-T1-GE3 replace older Vishay 600 V MOSFETs like SIHP22N60E in existing designs?
SIHK075N60E-T1-GE3 is not a direct pin-compatible replacement for SIHP22N60E due to different package (PowerPAK 10x12 vs. TO-220) and higher current rating (29 A vs. 22 A). While both belong to Vishay's E series, SIHK075N60E-T1-GE3 requires PCB layout revision for the surface-mount TOLL footprint and updated thermal design. Its lower RDS(on) and Qg offer efficiency gains, but electrical validation of gate drive strength and layout parasitics is mandatory before substitution in SIHK075N60E-T1-GE3 applications.
What is the recommended gate resistor value for SIHK075N60E-T1-GE3 in a 120 kHz PFC boost converter?
For a 120 kHz PFC boost stage, a gate resistor of 9.1 Ω is validated in Vishay's datasheet test conditions (td(on), tr, td(off), tf). This value balances switching speed and EMI: lower values (<5 Ω) increase dv/dt and risk shoot-through; higher values (>15 Ω) raise switching losses and degrade efficiency. The SIHK075N60E-T1-GE3's low Qg (41 nC typ) allows robust drive even with moderate Rg, making 9.1 Ω a proven starting point for SIHK075N60E-T1-GE3 designs.
SIHK075N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerBSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2582 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 167W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK®10 x 12
SIHK075N60E-T1-GE3 FAQ
1.How can I place an order for SIHK075N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHK075N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHK075N60E-T1-GE3 reliable?
The price and inventory of SIHK075N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK075N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHK075N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK075N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHK075N60E-T1-GE3?
SIHK075N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHK075N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHK075N60E-T1-GE3?
For technical support, including SIHK075N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK075N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHK075N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHK075N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK075N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHK075N60E-T1-GE3?
All SIHK075N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK075N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHK075N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHK075N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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