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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK085N60EF-T1GE3

Name: SIHK085N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHK085N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK085N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK085N60EF-T1GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHK085N60EF-T1GE3 from Vishay Siliconix is a 600 V, 30 A N-channel Power MOSFET in PowerPAK® 10 × 12 (TOLL) package, featuring R_DS(on) = 0.075 Ω @ V_GS = 10 V, Q_g = 42 nC (typ), and fast body diode with t_rr = 109 ns (typ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK085N60EF-T1GE3 datasheet, SIHK085N60EF-T1GE3 pinout, SIHK085N60EF-T1GE3 application, or SIHK085N60EF-T1GE3 equivalent, key selection criteria include its 600 V V_DS, 0.075 Ω R_DS(on), 173 mJ UIS rating, Co(er) = 107 pF, and fast-recovery body diode optimized for hard-switched and resonant topologies.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series technology to minimize R_DS(on) × Q_g figure of merit (FOM) and effective output capacitance (Co(er) = 107 pF). Its avalanche-rated design supports unclamped inductive switching with E_AS = 173 mJ at T_J = 25 °C.

The device integrates a fast, soft-recovery body diode (Q_rr = 0.6 μC typ, t_rr = 109 ns typ) and exhibits low dv/dt sensitivity (50 V/ns reverse diode dv/dt rating), enabling robust operation in high-di/dt PFC and motor drive circuits without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing.
R_DS(on) max	0.085 Ω @ V_GS = 10 V, I_D = 17 A - Enables <1.5 W conduction loss at 30 A continuous drain current.
Q_g max	63 nC - Determines gate drive power requirement; enables efficient 100–300 kHz switching with standard 1–2 A drivers.
E_AS	173 mJ - Confirmed single-pulse avalanche energy rating ensures reliability under transient overcurrent conditions.
t_rr	109 ns (typ) - Fast body diode recovery reduces switching loss and EMI in totem-pole PFC and half-bridge configurations.
R_thJC	0.68 °C/W - Enables high-power dissipation (184 W max) with minimal junction-to-case thermal rise on properly heatsinked PCBs.
C_oss(er)	107 pF - Energy-related effective output capacitance directly impacts turn-off loss in hard-switched converters.

Pinout & Package

SIHK085N60EF-T1GE3 is housed in a thermally enhanced PowerPAK® 10 × 12 (TOLL) package with exposed drain tab on bottom side for direct heatsinking. The top-side terminals are arranged in a 3-pin configuration: Gate (pin 1), Driver Source (pin 2), and Source (pins 3–8 paralleled).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; input resistance R_g = 0.7 Ω (typ) affects gate ring suppression.
Pin 2 (S_DRV)	Driver Source	Kelvin source connection for gate driver feedback; isolates gate loop from high di/dt source path to improve stability.
Pins 3–8 (S)	Power Source	Main current return path; paralleled pins reduce source inductance and enhance current sharing in high-frequency operation.
Drain Tab (bottom)	Drain	Exposed copper pad; primary thermal path to heatsink/PCB; electrically connected to drain potential (V_DS = 600 V rated).

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.15 Ω·nC (0.075 Ω × 42 nC) - Reduces combined conduction and switching losses in high-frequency PFC stages.
Avalanche energy rated (UIS)	173 mJ - Eliminates need for external clamping in inductive load switching applications like welding inverters.
Fast body diode with soft recovery	t_rr = 109 ns, Q_rr = 0.6 μC - Minimizes reverse recovery overshoot and EMI in totem-pole bridgeless PFC.
Enhanced dv/dt immunity	50 V/ns reverse diode dv/dt rating - Improves noise immunity in high-speed motor drives and solar inverters.
Thermally optimized TOLL package	R_thJC = 0.68 °C/W - Delivers 2.7× lower junction-to-case thermal resistance vs. TO-220, enabling compact heatsink designs.

Applications

Server & Telecom SMPS	Industrial PFC Modules
Use Scenario: High-density 3.3 kW front-end rectifier in 1U server PSU operating at 100–300 kHz. IC Role / Device Role / Timing Role: Primary switch in continuous conduction mode (CCM) boost PFC stage. Use Value: Low R_DS(on) and Q_g enable >98 % efficiency at full load; fast body diode eliminates need for external SiC diode.	Use Scenario: Active front-end rectifier in industrial 10 kW motor drive with 400 V DC link. IC Role / Device Role / Timing Role: High-side switch in interleaved two-phase boost PFC with 50 kHz switching. Use Value: 173 mJ UIS rating withstands line surges; low C_oss(er) reduces turn-off loss during phase-shift transitions.
Solar PV Inverters	Induction Heating Systems
Use Scenario: DC-link switching stage in string inverter with 600 V nominal bus voltage. IC Role / Device Role / Timing Role: DC bus isolation switch and MPPT stage switch in dual-stage topology. Use Value: 600 V V_DS provides margin over 540 V PV array OCV; Kelvin source improves gate control under high di/dt.	Use Scenario: Half-bridge inverter in 20 kW induction cooker operating at 20–50 kHz. IC Role / Device Role / Timing Role: Main power switch handling 30 A RMS load current with repetitive hard switching. Use Value: Fast t_rr and soft recovery reduce switching stress on complementary device; R_thJC = 0.68 °C/W sustains thermal cycling reliability.

Server & Telecom SMPS

Industrial PFC Modules

Use Scenario: High-density 3.3 kW front-end rectifier in 1U server PSU operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Primary switch in continuous conduction mode (CCM) boost PFC stage.

Use Value: Low R_DS(on) and Q_g enable >98 % efficiency at full load; fast body diode eliminates need for external SiC diode.

Use Scenario: Active front-end rectifier in industrial 10 kW motor drive with 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in interleaved two-phase boost PFC with 50 kHz switching.

Use Value: 173 mJ UIS rating withstands line surges; low C_oss(er) reduces turn-off loss during phase-shift transitions.

Solar PV Inverters

Induction Heating Systems

Use Scenario: DC-link switching stage in string inverter with 600 V nominal bus voltage.

IC Role / Device Role / Timing Role: DC bus isolation switch and MPPT stage switch in dual-stage topology.

Use Value: 600 V V_DS provides margin over 540 V PV array OCV; Kelvin source improves gate control under high di/dt.

Use Scenario: Half-bridge inverter in 20 kW induction cooker operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Main power switch handling 30 A RMS load current with repetitive hard switching.

Use Value: Fast t_rr and soft recovery reduce switching stress on complementary device; R_thJC = 0.68 °C/W sustains thermal cycling reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 72 nC (higher), TO-247 package, no Kelvin source	Larger footprint and higher gate drive loss; lacks driver source pin for layout-sensitive high-frequency PFC	Prefer SIHK085N60EF-T1GE3 where board space, thermal performance, and gate loop stability are critical.
IXFH30N60X	R_DS(on) = 0.12 Ω (higher), Q_g = 45 nC, TO-247, no fast body diode spec (t_rr not characterized)	Higher conduction loss and undefined diode recovery behavior limits use in hard-switched PFC	SIHK085N60EF-T1GE3 is superior for applications requiring fast, soft-recovery body diode and low FOM.

Compared with STW62N60M2 and IXFH30N60X, SIHK085N60EF-T1GE3 offers best-in-class R_DS(on) × Q_g, integrated Kelvin source for stable gate drive, and fully characterized fast body diode-making it optimal for high-efficiency, high-density, and high-reliability 600 V power conversion.

Availability

SIHK085N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial PFC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHK085N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The EF Series MOSFETs-including SIHK085N60EF-T1GE3-are engineered for high-frequency, high-efficiency AC/DC and DC/DC conversion in demanding industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHK085N60EF-T1GE3 at 100 °C case temperature?

The SIHK085N60EF-T1GE3 has a continuous drain current rating of 19 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 10 × 12 package and ensures safe operation under sustained high-power conditions without exceeding T_J = 150 °C.

Does SIHK085N60EF-T1GE3 have a Kelvin source connection, and how is it implemented?

Yes, SIHK085N60EF-T1GE3 features a dedicated Kelvin source (pin 2, labeled "Driver Source") separate from the main power source (pins 3–8). This design isolates the gate driver return path from high di/dt current flow, reducing gate oscillation and improving switching stability in high-frequency PFC and resonant converters.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHK085N60EF-T1GE3?

The SIHK085N60EF-T1GE3 body diode has a typical reverse recovery charge Q_rr of 0.6 μC, measured at T_J = 25 °C, I_F = 17 A, di/dt = 100 A/μs, and V_R = 400 V. This low Q_rr contributes to reduced switching loss and EMI in hard-switched topologies.

Is SIHK085N60EF-T1GE3 suitable for use in totem-pole bridgeless PFC circuits?

Yes, SIHK085N60EF-T1GE3 is explicitly suited for totem-pole bridgeless PFC due to its fast, soft-recovery body diode (t_rr = 109 ns typ, Q_rr = 0.6 μC), low R_DS(on) × Q_g FOM, and Kelvin source configuration-enabling clean commutation and high efficiency at 100–300 kHz switching frequencies.

What is the thermal resistance from junction to case (R_thJC) for SIHK085N60EF-T1GE3?

The SIHK085N60EF-T1GE3 has a maximum junction-to-case thermal resistance R_thJC of 0.68 °C/W, measured from junction to the exposed drain tab. This low value enables efficient heat transfer to external heatsinks or thermal vias, supporting high-power operation up to 184 W at T_C = 25 °C.

SIHK085N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2733 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK085N60EF-T1GE3 FAQ

1.How can I place an order for SIHK085N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK085N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK085N60EF-T1GE3 reliable?

The price and inventory of SIHK085N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK085N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHK085N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK085N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK085N60EF-T1GE3?

SIHK085N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK085N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK085N60EF-T1GE3?

For technical support, including SIHK085N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK085N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHK085N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK085N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK085N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHK085N60EF-T1GE3?

All SIHK085N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK085N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK085N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHK085N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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