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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK105N60EF-T1GE3

Name: SIHK105N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHK105N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK105N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK105N60EF-T1GE3.pdf

Description:: E SERIES POWER MOSFET POWERPAK 1

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Product details

Overview

SIHK105N60EF-T1GE3 from Vishay Siliconix is a 600 V, 24 A N-channel Power MOSFET in PowerPAK 10 x 12 package with fast body diode, R_DS(on) = 0.090 Ω at V_GS = 10 V, Q_g = 34 nC (typ), and E_AS = 154 mJ - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK105N60EF-T1GE3 datasheet, SIHK105N60EF-T1GE3 pinout, SIHK105N60EF-T1GE3 application, or SIHK105N60EF-T1GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), fast reverse recovery (t_rr = 102 ns typ), avalanche-rated operation, and thermal resistance R_thJC = 0.88 °C/W - critical for high-power density, high-reliability switching designs.

Technical Context

This EF-series MOSFET employs 4th-generation E-series silicon technology to minimize conduction and switching losses simultaneously. Its Co(er) = 85 pF and Co(tr) = 462 pF reflect engineered output capacitance behavior for reduced turn-off energy and predictable timing in hard-switched topologies.

The device integrates an optimized body diode with t_rr = 102 ns (typ), Q_rr = 0.6 μC (typ), and I_RRM = 13 A, enabling robust performance in continuous conduction mode (CCM) PFC without external SiC diodes. dv/dt capability of 100 V/ns (drain-source) and 50 V/ns (reverse diode) supports stable operation under fast transient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input PFC stages with 20% margin; rated for 480 V DC bus operation.
R_DS(on) (typ)	0.090 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.1 W conduction loss at 12 A, reducing heatsink requirements.
Q_g (typ)	34 nC - lowers gate drive power and enables use with standard 1–2 A peak gate drivers in 100–300 kHz designs.
E_AS	154 mJ - ensures ruggedness against unclamped inductive switching events in motor drives and welders.
t_rr	102 ns (typ) - minimizes commutation loss and voltage overshoot during diode reverse recovery in CCM boost converters.
R_thJC	0.88 °C/W - allows >100 W continuous dissipation with modest heatsinking, supporting compact 1U server PSU layouts.
I_D (cont)	24 A at T_C = 25 °C - delivers high current density in PowerPAK 10 x 12 footprint (12.88 mm × 9.90 mm).

Pinout & Package

Package: PowerPAK® 10 x 12 (TOLL), surface-mount, drain-connected copper tab on bottom side for enhanced thermal transfer. Dimensions: 12.88 mm × 9.90 mm × 2.25 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (tab)	High-current power return path	Exposed copper drain pad soldered to PCB thermal plane; primary heat extraction path (R_thJC = 0.88 °C/W).
Source (pins 3–8)	Power source reference and current return	Multi-pin parallel connection reduces source inductance and improves switching stability in high-di/dt applications.
Gate (pin 1)	Control terminal for channel modulation	Low-impedance gate input (R_g = 0.8 Ω typ); requires <10 Ω series gate resistor to damp ringing with Q_gd = 8 nC.
Driver source (pin 2)	Separate Kelvin source for gate driver reference	Isolates gate drive loop from high-di/dt source path, minimizing V_GS error and improving turn-on consistency.

Key Features

Feature	Design Value
Fast body diode	t_rr = 102 ns (typ), Q_rr = 0.6 μC (typ) - reduces dead-time loss and voltage spike in synchronous rectification and bidirectional topologies.
Low R_DS(on) × Q_g FOM	3.06 Ω·nC - balances conduction and switching loss for optimal efficiency across 65–300 kHz PFC and LLC operating ranges.
Avalanche energy rating	E_AS = 154 mJ - eliminates need for external snubbers in inductive load switching and enables robust startup sequencing.
Enhanced dv/dt immunity	100 V/ns (V_DS) and 50 V/ns (diode) - suppresses false turn-on in high-noise industrial environments and multi-phase interleaved systems.
Thermal performance	R_thJC = 0.88 °C/W - enables >140 W power handling with 40 °C temperature rise, supporting high-density board layouts.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Active PFC boost converter in 1–3 kW 1U rack-mounted server PSUs operating at 100–300 kHz. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current with minimal loss. Use Value: 0.090 Ω R_DS(on) and 34 nC Q_g reduce total losses by ~12% vs. prior-gen 600 V MOSFETs, enabling 96%+ efficiency at 230 V AC input.	Use Scenario: Primary-side switch in 48 V/3 kW telecom rectifiers with universal AC input (90–264 V AC) and forced-air cooling. IC Role / Device Role / Timing Role: High-voltage switching element in dual-active-bridge or phase-shifted full-bridge topology. Use Value: 154 mJ E_AS withstands repeated line surges and hot-swap transients; 0.88 °C/W R_thJC sustains 24 A continuous current at 85 °C case temperature.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter Leg
Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus for H-bridge inverter section. IC Role / Device Role / Timing Role: High-side switch in active clamp forward or resonant LLC converter operating at 150–250 kHz. Use Value: Fast body diode (t_rr = 102 ns) enables zero-voltage switching (ZVS) assist without external diode, simplifying layout and reducing BOM count.	Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 7.5–15 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Hard-switched high-side power switch in 6–16 kHz PWM inverter leg with regenerative braking. Use Value: Avalanche rating (E_AS = 154 mJ) absorbs inductive kickback during rapid deceleration; 61 A pulsed ID supports 3× overload current for 10 s.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active PFC boost converter in 1–3 kW 1U rack-mounted server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current with minimal loss.

Use Value: 0.090 Ω R_DS(on) and 34 nC Q_g reduce total losses by ~12% vs. prior-gen 600 V MOSFETs, enabling 96%+ efficiency at 230 V AC input.

Use Scenario: Primary-side switch in 48 V/3 kW telecom rectifiers with universal AC input (90–264 V AC) and forced-air cooling.

IC Role / Device Role / Timing Role: High-voltage switching element in dual-active-bridge or phase-shifted full-bridge topology.

Use Value: 154 mJ E_AS withstands repeated line surges and hot-swap transients; 0.88 °C/W R_thJC sustains 24 A continuous current at 85 °C case temperature.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter Leg

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus for H-bridge inverter section.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or resonant LLC converter operating at 150–250 kHz.

Use Value: Fast body diode (t_rr = 102 ns) enables zero-voltage switching (ZVS) assist without external diode, simplifying layout and reducing BOM count.

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 7.5–15 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Hard-switched high-side power switch in 6–16 kHz PWM inverter leg with regenerative braking.

Use Value: Avalanche rating (E_AS = 154 mJ) absorbs inductive kickback during rapid deceleration; 61 A pulsed ID supports 3× overload current for 10 s.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.085 Ω (typ), Q_g = 55 nC (max), TO-247 package, no Kelvin source	Higher gate charge increases driver loss; through-hole mounting limits power density vs. PowerPAK 10 x 12	Preferred where legacy TO-247 layout exists and thermal mass outweighs switching speed needs.
IXFH60N60X3	R_DS(on) = 0.075 Ω (typ), Q_g = 110 nC (max), TO-247 package, no fast body diode spec	No published t_rr/Q_rr; unsuitable for CCM PFC without external diode; higher Q_g demands stronger gate driver	Selected when lowest R_DS(on) dominates over switching loss and diode performance.

Compared with STW62N60M2 and IXFH60N60X3, SIHK105N60EF-T1GE3 offers superior switching efficiency via lower Q_g and guaranteed fast body diode performance, while its surface-mount PowerPAK 10 x 12 package enables higher power density and better thermal management than TO-247 alternatives.

Availability

SIHK105N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for SIHK105N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The EF Series targets high-frequency, high-efficiency power conversion in server, telecom, and renewable energy systems - engineered for low FOM, fast body diode response, and rugged avalanche operation.

FAQ

What is the maximum continuous drain current rating for SIHK105N60EF-T1GE3 at 100 °C case temperature?

The SIHK105N60EF-T1GE3 has a continuous drain current rating of 15 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 10 x 12 package and ensures safe operation under sustained high-power conditions. The SIHK105N60EF-T1GE3 maintains R_DS(on) = 0.105 Ω (max) at this condition, supporting stable conduction loss calculation.

Does SIHK105N60EF-T1GE3 include a Kelvin source connection, and how is it implemented?

Yes, the SIHK105N60EF-T1GE3 features a dedicated Kelvin source terminal (pin 2), separate from the main source pins (3–8). This design isolates the gate driver's reference path from high-di/dt source current, minimizing V_GS sensing error and improving switching consistency. The SIHK105N60EF-T1GE3 leverages this for precise gate control in high-frequency PFC and resonant converters.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHK105N60EF-T1GE3, and why does it matter?

The SIHK105N60EF-T1GE3 body diode has a typical Q_rr of 0.6 μC at T_J = 25 °C, IF = 12 A, and di/dt = 100 A/μs. Low Q_rr directly reduces commutation loss and voltage overshoot during hard switching, making the SIHK105N60EF-T1GE3 especially valuable in CCM boost PFC where diode recovery dominates system loss.

Can SIHK105N60EF-T1GE3 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, the SIHK105N60EF-T1GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 154 mJ at T_J = 25 °C. This rating is validated per JEDEC standards and enables reliable operation during transient overloads in motor drives and welding equipment without external protection. The SIHK105N60EF-T1GE3 data sheet confirms this in the Absolute Maximum Ratings table.

What is the gate-source threshold voltage range for SIHK105N60EF-T1GE3, and how does it affect drive circuit design?

The SIHK105N60EF-T1GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at I_D = 250 μA. This ensures robust turn-on with standard 10 V gate drive while preventing accidental activation from noise. For reliable enhancement-mode operation, gate drive must exceed 5.0 V - a requirement clearly defined in the SIHK105N60EF-T1GE3 specifications and verified across temperature.

SIHK105N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2301 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 142W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK105N60EF-T1GE3 FAQ

1.How can I place an order for SIHK105N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK105N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK105N60EF-T1GE3 reliable?

The price and inventory of SIHK105N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK105N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHK105N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK105N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK105N60EF-T1GE3?

SIHK105N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK105N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK105N60EF-T1GE3?

For technical support, including SIHK105N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK105N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHK105N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK105N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK105N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHK105N60EF-T1GE3?

All SIHK105N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK105N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK105N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHK105N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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