Vishay Siliconix SIHK125N60EF-T1GE3

Overview

SIHK125N60EF-T1GE3 from Vishay Siliconix is a 600 V, 21 A N-channel Power MOSFET in PowerPAK® 10 x 12 (TOLL) package, featuring R_DS(on) = 0.109 Ω at V_GS = 10 V, Q_g = 30 nC (typ), and avalanche-rated E_AS = 127 mJ. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK125N60EF-T1GE3 datasheet, SIHK125N60EF-T1GE3 pinout, SIHK125N60EF-T1GE3 application, or SIHK125N60EF-T1GE3 equivalent, key selection criteria include its fast body diode (t_rr = 100 ns typ), low Co(er) = 75 pF, and 100 V/ns dv/dt capability - critical for hard-switched and resonant topologies requiring robust commutation.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for high-voltage, medium-current switching. Its design integrates a fast-recovery body diode with t_rr = 100–200 ns and Q_rr = 0.5–1.0 μC, enabling reduced switching loss and voltage overshoot during synchronous rectification or freewheeling in continuous conduction mode.

The device operates with V_GS(th) = 3.0–5.0 V and supports gate drive at 10 V, delivering g_fs = 2.4 S (typ) and C_iss = 1863 pF (typ). Its R_thJC = 0.95 °C/W enables high-power operation up to 132 W with effective heatsinking, while the PowerPAK 10 x 12 package provides low-inductance drain-source loop and enhanced thermal transfer via exposed drain tab.

Key Specifications

Pinout & Package

SIHK125N60EF-T1GE3 uses the PowerPAK® 10 x 12 (TOLL) package with exposed drain tab on the bottom side for thermal and electrical connection. The top-side terminals are arranged in a 3-pin configuration: Gate (pin 1), Driver Source (pin 2), and Source (pins 3–8 paralleled).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N60M2 and IXFH32N60P, SIHK125N60EF-T1GE3 offers superior switching efficiency due to its lower Q_g/Co(er) combination and integrated fast diode - directly improving system-level efficiency by 0.5–1.2 % in 100–300 kHz PFC and LLC designs.

Availability

SIHK125N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHK125N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing infrastructure.

The EF Series, including SIHK125N60EF-T1GE3, was engineered specifically for high-frequency, high-efficiency power conversion in next-generation server, telecom, and renewable energy systems - prioritizing low FOM, fast body diode, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHK125N60EF-T1GE3 at 100 °C case temperature?

The SIHK125N60EF-T1GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 10 x 12 package and ensures safe operation within the 150 °C maximum junction temperature limit. At T_C = 25 °C, the rating increases to 21 A.

Does SIHK125N60EF-T1GE3 have a built-in fast-recovery body diode, and what are its key parameters?

Yes, SIHK125N60EF-T1GE3 integrates a fast-recovery body diode with t_rr = 100–200 ns (typ/max), Q_rr = 0.5–1.0 μC, and V_SD = 1.2 V at I_S = 12 A and T_J = 25 °C. These values are measured under standardized conditions (di/dt = 100 A/μs, V_R = 400 V) and confirm suitability for high-frequency freewheeling and synchronous rectification in modern SMPS topologies.

What is the gate threshold voltage range for SIHK125N60EF-T1GE3, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for SIHK125N60EF-T1GE3 is specified as 3.0–5.0 V at I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers and ensures reliable turn-on margin above typical noise levels. The device is not logic-level; it requires ≥8 V for partial conduction and 10 V for full R_DS(on) specification, making 12 V gate drive optimal for robust operation.

Can SIHK125N60EF-T1GE3 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, SIHK125N60EF-T1GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy E_AS of 127 mJ under defined test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.0 A). This rating validates its use in circuits subject to inductive energy dump, such as relay driving or transformer reset, without requiring external protection.

What is the thermal resistance from junction to case (R_thJC) for SIHK125N60EF-T1GE3, and how does it impact heatsink design?

The maximum junction-to-case thermal resistance R_thJC for SIHK125N60EF-T1GE3 is 0.95 °C/W, measured from junction to the exposed drain tab. This low value enables efficient heat transfer to the PCB copper pour or external heatsink. For example, at 132 W dissipation, the junction-to-case temperature rise is ≤126 °C - leaving only 24 °C margin to reach the 150 °C T_J limit, so heatsink + interface resistance must be ≤0.18 °C/W for safe continuous operation.