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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK125N60E-T1-GE3

Name: SIHK125N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHK125N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK125N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK125N60E-T1-GE3.pdf

Description:: E SERIES POWER MOSFET POWERPAK 1

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Product details

Overview

SIHK125N60E-T1-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel Power MOSFET in PowerPAK® 10 x 12 package, featuring R_DS(on) = 0.109 Ω (typ. at V_GS = 10 V), Q_g = 29 nC (typ.), and avalanche-rated E_AS = 154 mJ. It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverters where low conduction loss and fast switching are critical.

For engineers reviewing the SIHK125N60E-T1-GE3 datasheet, SIHK125N60E-T1-GE3 pinout, SIHK125N60E-T1-GE3 application, or SIHK125N60E-T1-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.109 Ω R_DS(on), 29 nC gate charge, 154 mJ UIS rating, and PowerPAK 10 × 12 thermal performance with R_thJC = 0.95 °C/W.

Technical Context

This MOSFET employs Vishay's 4th-generation E series technology optimized for high-voltage power conversion. Its low figure-of-merit (R_DS(on) × Q_g = 3.17 Ω·nC) and reduced effective output capacitance (C_o(er) = 52 pF) directly lower both conduction and switching losses in hard-switched topologies.

The device integrates an avalanche-rated body diode with t_rr = 300 ns (typ.) and Q_rr = 3.8 μC (typ.), supporting ZVS-capable designs and robust operation under inductive load transients. Its V_GS(th) of 3.0–5.0 V ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full bridge or boost converter DC bus voltages up to 480 V with margin for transient spikes.
R_DS(on) (typ.)	0.109 Ω at V_GS = 10 V, I_D = 12 A - Enables <1.5 W conduction loss at 12 A, reducing heatsink requirements.
Q_g (typ.)	29 nC - Low gate drive energy supports efficient 100+ kHz switching without excessive driver power dissipation.
E_AS	154 mJ - Rated unclamped inductive switching energy allows safe operation during overcurrent events without external snubbers.
C_o(er)	52 pF - Energy-related effective output capacitance minimizes turn-off loss in hard-switched converters.
R_thJC	0.95 °C/W - Enables >100 W continuous power dissipation with moderate heatsinking on the drain tab.
t_rr	300 ns (typ.) - Fast body diode recovery reduces cross-conduction loss in synchronous rectification and LLC resonant circuits.

Pinout & Package

SIHK125N60E-T1-GE3 uses the PowerPAK® 10 × 12 (TOLL) surface-mount package with exposed drain tab for enhanced thermal transfer. The drain connects to the bottom copper pad; source and gate are accessible via top-side leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed copper tab provides low-inductance, low-thermal-resistance connection to PCB ground plane or heatsink.
Pin 1 (Gate)	Control input	High-impedance terminal requiring <100 nA leakage; driven by 10 V logic-level gate driver for full enhancement.
Pins 2–8 (Source)	Return path for channel current and gate reference	Multi-pin source configuration lowers parasitic inductance and improves current sharing in high-di/dt applications.

Key Features

Feature	Design Value
4th-generation E series technology	Optimized cell layout and trench design deliver best-in-class R_DS(on) × Q_g FOM for 600 V class.
Avalanche energy rating (UIS)	154 mJ single-pulse rating enables robustness against inductive kickback without derating or external clamping.
Low C_o(er) and C_iss	52 pF effective output capacitance and 1811 pF input capacitance reduce switching loss and improve EMI behavior.
Enhanced body diode performance	300 ns reverse recovery time and 3.8 μC Q_rr support high-frequency hard-switched and quasi-resonant topologies.
PowerPAK 10 × 12 thermal design	0.95 °C/W junction-to-case resistance allows >130 W power handling with minimal thermal interface material.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching transistor handling 400 V DC bus and 100 kHz PWM. Use Value: 0.109 Ω R_DS(on) and 29 nC Q_g enable >96% efficiency at full load while maintaining thermal stability.	Use Scenario: DC-link switching stage in string-level solar inverter operating at 1000 V system voltage. IC Role / Device Role / Timing Role: 600 V N-channel MOSFET used in boost converter front-end to step up panel voltage to 600–800 V DC bus. Use Value: 154 mJ E_AS rating ensures reliability during lightning-induced surges and grid fault conditions.
Industrial Motor Drive	LED Streetlight Driver
Use Scenario: Inverter leg switch in 5 kW HVAC compressor drive with IGBT-like ruggedness requirements. IC Role / Device Role / Timing Role: High-current switching device operating at 15 kHz with 21 A continuous drain current capability. Use Value: Multi-pin source layout and 0.95 °C/W R_thJC sustain 13 A continuous current at 100 °C case temperature without derating.	Use Scenario: High-side switch in constant-current LED driver for outdoor street lighting with 480 V AC input. IC Role / Device Role / Timing Role: Primary switch in flyback or half-bridge PFC + buck topology delivering 150 W output. Use Value: 3.0–5.0 V V_GS(th) ensures clean turn-on with standard 12 V gate drivers and eliminates false triggering in noisy environments.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching transistor handling 400 V DC bus and 100 kHz PWM.

Use Value: 0.109 Ω R_DS(on) and 29 nC Q_g enable >96% efficiency at full load while maintaining thermal stability.

Use Scenario: DC-link switching stage in string-level solar inverter operating at 1000 V system voltage.

IC Role / Device Role / Timing Role: 600 V N-channel MOSFET used in boost converter front-end to step up panel voltage to 600–800 V DC bus.

Use Value: 154 mJ E_AS rating ensures reliability during lightning-induced surges and grid fault conditions.

Industrial Motor Drive

LED Streetlight Driver

Use Scenario: Inverter leg switch in 5 kW HVAC compressor drive with IGBT-like ruggedness requirements.

IC Role / Device Role / Timing Role: High-current switching device operating at 15 kHz with 21 A continuous drain current capability.

Use Value: Multi-pin source layout and 0.95 °C/W R_thJC sustain 13 A continuous current at 100 °C case temperature without derating.

Use Scenario: High-side switch in constant-current LED driver for outdoor street lighting with 480 V AC input.

IC Role / Device Role / Timing Role: Primary switch in flyback or half-bridge PFC + buck topology delivering 150 W output.

Use Value: 3.0–5.0 V V_GS(th) ensures clean turn-on with standard 12 V gate drivers and eliminates false triggering in noisy environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.115 Ω (typ.), Q_g = 35 nC, TO-247 package, R_thJC = 0.55 °C/W	Higher thermal resistance requires larger heatsink; higher Q_g increases driver loss at >100 kHz	Preferred for lower-frequency (<60 kHz), higher-power (>2 kW) industrial drives where TO-247 mechanical robustness is prioritized.
IXFH32N60P	R_DS(on) = 0.145 Ω (typ.), Q_g = 42 nC, TO-247 package, no UIS rating	No avalanche energy specification; higher R_DS(on) increases conduction loss by ~32% at 12 A	Suitable for cost-sensitive, non-critical PFC applications where surge immunity is managed externally.

Compared with STW62N60M2 and IXFH32N60P, SIHK125N60E-T1-GE3 delivers superior switching efficiency due to its lower Q_g and C_o(er), better thermal performance per unit area via PowerPAK 10 × 12, and guaranteed UIS ruggedness-making it optimal for space-constrained, high-frequency, high-reliability power supplies.

Availability

SIHK125N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIHK125N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHK125N60E-T1-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-voltage, high-frequency switching in telecom, server, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for SIHK125N60E-T1-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHK125N60E-T1-GE3 is 13 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This rating accounts for thermal derating from the 21 A value at T_C = 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit. SIHK125N60E-T1-GE3 maintains stable R_DS(on) performance across this range due to its positive V_DS temperature coefficient.

Does SIHK125N60E-T1-GE3 have avalanche capability, and how is it rated?

Yes, SIHK125N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 154 mJ at T_J = 25 °C. This rating is verified per JEDEC standard JESD24-1 and applies under defined test conditions: V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.3 A. SIHK125N60E-T1-GE3 does not require external avalanche protection in properly designed SMPS or PFC circuits.

What is the gate threshold voltage range for SIHK125N60E-T1-GE3, and why does it matter?

The gate threshold voltage (V_GS(th)) for SIHK125N60E-T1-GE3 is specified from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious triggering. SIHK125N60E-T1-GE3 achieves full enhancement well within this window, enabling predictable switching timing and minimizing shoot-through risk in half-bridge configurations.

How does the PowerPAK 10 × 12 package of SIHK125N60E-T1-GE3 improve thermal performance compared to TO-220?

The PowerPAK 10 × 12 package of SIHK125N60E-T1-GE3 achieves R_thJC = 0.95 °C/W, significantly better than typical TO-220 devices (≥2.5 °C/W), due to its exposed drain tab directly soldered to the PCB copper plane. This design reduces thermal resistance by >60%, allowing SIHK125N60E-T1-GE3 to dissipate 132 W with compact board-level heatsinking-ideal for high-density server and telecom power modules where vertical space is constrained.

What are the key body diode parameters of SIHK125N60E-T1-GE3, and how do they impact circuit design?

SIHK125N60E-T1-GE3 features a body diode with t_rr = 300 ns (typ.), Q_rr = 3.8 μC (typ.), and V_SD = 1.2 V (typ. at I_S = 12 A, T_J = 25 °C). These values enable efficient operation in synchronous rectification and resonant topologies by minimizing reverse recovery loss and voltage overshoot. SIHK125N60E-T1-GE3's low Q_rr reduces EMI generation and gate driver stress during commutation, especially in LLC and phase-shifted full-bridge converters.

SIHK125N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1811 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 132W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK125N60E-T1-GE3 FAQ

1.How can I place an order for SIHK125N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK125N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK125N60E-T1-GE3 reliable?

The price and inventory of SIHK125N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK125N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHK125N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK125N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK125N60E-T1-GE3?

SIHK125N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK125N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK125N60E-T1-GE3?

For technical support, including SIHK125N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK125N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHK125N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK125N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK125N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHK125N60E-T1-GE3?

All SIHK125N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK125N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK125N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHK125N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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