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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK155N60EF-T1GE3

Name: SIHK155N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHK155N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK155N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK155N60EF-T1GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHK155N60EF-T1GE3 from Vishay Siliconix is a 600 V, 18 A N-channel Power MOSFET in PowerPAK® 10 × 12 (TOLL) package with fast body diode, R_DS(on) = 0.137 Ω at V_GS = 10 V, Q_g = 25 nC (typ), and E_AS = 179 mJ - designed for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK155N60EF-T1GE3 datasheet, SIHK155N60EF-T1GE3 pinout, SIHK155N60EF-T1GE3 application, or SIHK155N60EF-T1GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, 100 V/ns dv/dt capability, fast body diode (t_rr = 95 ns typ), and avalanche-rated ruggedness for hard-switched topologies.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology optimized for reduced switching and conduction losses in continuous conduction mode (CCM) PFC and resonant LLC primary-side switches. Its low C_oss (56 pF typ) and Co(er) (61 pF) enable efficient high-frequency operation up to 300 kHz.

The integrated fast-recovery body diode (V_SD = 1.2 V at I_S = 10 A, t_rr = 95 ns) supports ZVS/ZCS transitions and reduces snubber losses in bridge configurations. Gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures robust noise immunity while remaining compatible with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin for transient overvoltage in telecom/server PFC stages
R_DS(on) typ	0.137 Ω at V_GS = 10 V, T_J = 25 °C - enables <1.4 W conduction loss at 10 A, reducing heatsink requirements
Q_g max	38 nC - determines gate drive power and switching speed; low value supports efficient 100–300 kHz operation with ≤1 W driver loss
E_AS	179 mJ - rated unclamped inductive switching energy allows reliable operation under load dump or short-circuit conditions without external clamping
t_rr	95 ns typ - fast body diode recovery minimizes commutation loss and ringing in half/full-bridge topologies
R_thJC	0.96 °C/W - enables 156 W power dissipation with ≤150 °C junction temperature when mounted on 2 oz Cu PCB with thermal pad
dv/dt rating	100 V/ns - ensures robustness against parasitic turn-on in high-di/dt environments such as motor drives and inverters

Pinout & Package

Package: PowerPAK® 10 × 12 (TOLL) - thermally enhanced surface-mount package with exposed drain tab on bottom side for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires 10 V drive for full enhancement; gate resistance R_g = 0.9 Ω (max) affects switching speed and overshoot
Pins 2–8	Source	Common source node for all internal die cells; electrically connected to source metallization; used for current return and gate reference
Drain tab (bottom)	Drain	Exposed copper pad on underside; primary thermal path and high-current drain connection; must be soldered to large copper pour for thermal management

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.65 Ω·nC - directly improves efficiency in hard-switched converters by minimizing combined conduction + switching loss trade-off
Fast body diode (t_rr, Q_rr)	t_rr = 95 ns, Q_rr = 0.5 μC - reduces reverse recovery loss and EMI in bridge-leg commutation, enabling higher frequency operation
Avalanche energy rating (E_AS)	179 mJ - eliminates need for external RCD clamp in many PFC and flyback designs, simplifying layout and improving reliability
Low effective output capacitance (Co(er))	61 pF - lowers stored energy (E_oss) during turn-off, reducing switching loss in resonant and soft-switching topologies
High dv/dt immunity	100 V/ns - prevents false turn-on due to Miller-induced gate voltage spikes in high-speed, high-voltage applications

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Active boost PFC stage operating at 65–100 kHz with 380–400 V DC output from 90–264 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles peak currents up to 18 A and blocks 600 V. Use Value: Low R_DS(on) and fast body diode reduce total losses by ~12 % vs. prior-gen MOSFETs, enabling >96 % PFC efficiency at full load.	Use Scenario: Primary-side switch in phase-shifted full-bridge (PSFB) DC/DC converter for 48 V telecom rectifiers. IC Role / Device Role / Timing Role: High-side and low-side switch in isolated DC/DC stage; operates with ZVS at 100–200 kHz using body diode conduction for dead-time overlap. Use Value: 95 ns t_rr and low Q_rr minimize circulating current and voltage spike during ZVS transition, improving reliability and reducing EMI filter size.
Solar PV Inverter DC/AC Stage	Industrial Motor Drive Inverter
Use Scenario: DC-link switch in three-phase inverter stage of string or central solar inverter (600 V bus). IC Role / Device Role / Timing Role: IGBT replacement in 16–20 kHz PWM-driven inverter leg; used with external freewheeling diodes or body-diode assisted commutation. Use Value: 179 mJ E_AS rating supports safe single-pulse fault clearing during grid fault events without desaturation protection circuitry.	Use Scenario: Half-bridge leg in 3-phase VFD driving 3–7.5 kW induction motors with regenerative braking. IC Role / Device Role / Timing Role: Upper/lower switch in inverter output stage; conducts bidirectional current during regeneration via body diode or external diode. Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during rapid bus transients caused by motor cable reflections and stray inductance.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active boost PFC stage operating at 65–100 kHz with 380–400 V DC output from 90–264 V AC input.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles peak currents up to 18 A and blocks 600 V.

Use Value: Low R_DS(on) and fast body diode reduce total losses by ~12 % vs. prior-gen MOSFETs, enabling >96 % PFC efficiency at full load.

Use Scenario: Primary-side switch in phase-shifted full-bridge (PSFB) DC/DC converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: High-side and low-side switch in isolated DC/DC stage; operates with ZVS at 100–200 kHz using body diode conduction for dead-time overlap.

Use Value: 95 ns t_rr and low Q_rr minimize circulating current and voltage spike during ZVS transition, improving reliability and reducing EMI filter size.

Solar PV Inverter DC/AC Stage

Industrial Motor Drive Inverter

Use Scenario: DC-link switch in three-phase inverter stage of string or central solar inverter (600 V bus).

IC Role / Device Role / Timing Role: IGBT replacement in 16–20 kHz PWM-driven inverter leg; used with external freewheeling diodes or body-diode assisted commutation.

Use Value: 179 mJ E_AS rating supports safe single-pulse fault clearing during grid fault events without desaturation protection circuitry.

Use Scenario: Half-bridge leg in 3-phase VFD driving 3–7.5 kW induction motors with regenerative braking.

IC Role / Device Role / Timing Role: Upper/lower switch in inverter output stage; conducts bidirectional current during regeneration via body diode or external diode.

Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during rapid bus transients caused by motor cable reflections and stray inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.125 Ω, Q_g = 42 nC, TO-247 package, no specified E_AS rating	Higher gate charge increases driver loss; through-hole mounting limits power density and thermal performance vs. PowerPAK 10×12	Prefer SIHK155N60EF-T1GE3 for surface-mount, high-density, and avalanche-rugged designs
IXFH30N60P	R_DS(on) = 0.18 Ω, Q_g = 29 nC, TO-247, E_AS = 120 mJ	Higher R_DS(on) increases conduction loss; lower E_AS requires additional clamping in high-energy fault scenarios	Choose SIHK155N60EF-T1GE3 where low R_DS(on) × Q_g and guaranteed 179 mJ E_AS are critical for efficiency and ruggedness

Compared with STW62N60M2 and IXFH30N60P, SIHK155N60EF-T1GE3 delivers superior power density via its thermally optimized PowerPAK 10×12 package, lowest R_DS(on) × Q_g FOM among the three, and highest certified avalanche energy - making it optimal for space-constrained, high-reliability PFC and industrial inverter designs.

Availability

SIHK155N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifier modules, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHK155N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and thermal reliability.

The EF Series is engineered for high-frequency, high-efficiency power conversion in demanding applications including telecom, server, industrial, and renewable energy systems - prioritizing low switching loss, fast body diode response, and avalanche survivability.

FAQ

What is the maximum continuous drain current rating for SIHK155N60EF-T1GE3 at 100 °C case temperature?

The SIHK155N60EF-T1GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 10×12 package and ensures safe operation within the 150 °C maximum junction temperature limit under typical PCB cooling conditions.

Does SIHK155N60EF-T1GE3 have a qualified avalanche energy rating, and what test conditions apply?

Yes, SIHK155N60EF-T1GE3 is rated for single-pulse avalanche energy (E_AS) of 179 mJ. The test condition is V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.8 A, per the datasheet note b. This rating is validated and guaranteed for design margin in unclamped inductive switching events.

What is the gate-source threshold voltage range for SIHK155N60EF-T1GE3, and how does it impact drive design?

The gate-source threshold voltage (V_GS(th)) for SIHK155N60EF-T1GE3 is 3.0–5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing sufficient noise margin against spurious turn-on in noisy power environments, supporting robust operation in high-di/dt applications.

How is thermal performance characterized for SIHK155N60EF-T1GE3, and what is the junction-to-case thermal resistance?

The SIHK155N60EF-T1GE3 has a maximum junction-to-case (drain) thermal resistance (R_thJC) of 0.96 °C/W, measured from junction to the exposed drain tab. This low value enables efficient heat transfer to the PCB thermal pad, allowing 156 W power dissipation at T_C = 25 °C - critical for high-power density designs without forced air cooling.

Is SIHK155N60EF-T1GE3 lead (Pb)-free and halogen-free, and which compliance standard does it meet?

Yes, SIHK155N60EF-T1GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-T1GE3" suffix explicitly denotes this environmental compliance, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for unlimited floor life at ≤30 °C/85 % RH.

SIHK155N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1465 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK155N60EF-T1GE3 FAQ

1.How can I place an order for SIHK155N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK155N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK155N60EF-T1GE3 reliable?

The price and inventory of SIHK155N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK155N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHK155N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK155N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK155N60EF-T1GE3?

SIHK155N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK155N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK155N60EF-T1GE3?

For technical support, including SIHK155N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK155N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHK155N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK155N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK155N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHK155N60EF-T1GE3?

All SIHK155N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK155N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK155N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHK155N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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