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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK155N60E-T1-GE3

Name: SIHK155N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHK155N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK155N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK155N60E-T1-GE3.pdf

Description:: E SERIES POWER MOSFET POWERPAK 1

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Product details

Overview

SIHK155N60E-T1-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel Power MOSFET in PowerPAK® 10 x 12 package, featuring R_DS(on) = 0.137 Ω (typ. at V_GS = 10 V), Q_g = 24 nC (typ.), and avalanche-rated energy (E_AS = 179 mJ). It delivers low conduction and switching losses for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHK155N60E-T1-GE3 datasheet, SIHK155N60E-T1-GE3 pinout, SIHK155N60E-T1-GE3 application, or SIHK155N60E-T1-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.137 Ω R_DS(on), 24 nC gate charge, 179 mJ UIS rating, and PowerPAK 10 x 12 thermal performance with R_thJC = 0.96 °C/W.

Technical Context

This 4th-generation E-series MOSFET uses optimized trench-gate silicon technology to minimize R_DS(on) × Q_g figure-of-merit (FOM) and reduce effective output capacitance (C_o(er) = 58 pF). Its low C_iss (1514 pF typ.) and C_rss (2 pF typ.) support fast, low-loss hard-switching operation up to 480 V bus voltages.

The device integrates a robust body diode with t_rr = 291 ns (typ.), Q_rr = 3.5 μC (typ.), and reverse recovery dv/dt capability of 5 V/ns - enabling reliable operation in continuous conduction mode (CCM) PFC and resonant topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified to ~565 V DC bus with 5% margin for transient overvoltage in telecom/server SMPS
R_DS(on) (typ.)	0.137 Ω at V_GS = 10 V - enables ≤2.7 W conduction loss at 10 A, critical for thermally constrained PFC boost stages
Q_g (typ.)	24 nC - reduces gate drive power and enables use of lower-cost 1-A drivers in high-frequency (>100 kHz) designs
E_AS	179 mJ - ensures ruggedness against unclamped inductive switching events in motor drives and welders
C_o(er)	58 pF - lowers stored output energy (E_oss) during turn-off, directly reducing switching loss in hard-switched converters
R_thJC	0.96 °C/W - allows >100 W power dissipation with modest heatsinking, supporting compact 1U server PSU layouts
t_rr	291 ns (typ.) - minimizes diode reverse recovery stress on synchronous rectifiers and adjacent switches in bridge configurations

Pinout & Package

SIHK155N60E-T1-GE3 is housed in a thermally enhanced PowerPAK® 10 x 12 (TOLL) package with exposed drain tab for low-inductance, high-current PCB mounting. The 8-pin configuration features source-connected pins (pins 3–8), gate on pin 1, driver source on pin 2, and drain via the bottom-side metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring <100 nA leakage; connects to gate driver IC output with <1.8 Ω gate resistance for optimal dV/dt control
Pin 2	Driver Source	Dedicated Kelvin source connection for accurate gate drive referencing, minimizing voltage overshoot during fast switching
Pins 3–8	Source	Parallel low-inductance source return path; must be routed with wide copper pour to handle 19 A continuous current and reduce common-source inductance
Drain Tab	Drain	Exposed bottom-side metal pad carrying full load current; requires direct thermal interface to heatsink or internal copper plane for R_thJC = 0.96 °C/W performance

Key Features

Feature	Design Value
4th-generation E-series trench MOSFET	Optimized cell pitch and gate oxide thickness yield 22% lower R_DS(on) × Q_g FOM vs. prior generation, improving efficiency in 100–300 kHz PFC
Avalanche energy rated (UIS)	179 mJ single-pulse rating verified per JEDEC JESD24-1, enabling reliable operation under short-circuit or overload conditions without derating
Low effective output capacitance	C_o(er) = 58 pF reduces turn-off energy loss by 35% versus comparable 600 V MOSFETs with similar R_DS(on), critical for ZVS-assisted topologies
Enhanced body diode recovery	t_rr = 291 ns and Q_rr = 3.5 μC minimize cross-conduction losses and EMI in half-bridge LLC and phase-shifted full-bridge converters
PowerPAK 10 x 12 package	0.96 °C/W R_thJC and 50 °C/W R_thJA (on 1"×1" FR4) enable >156 W dissipation with minimal footprint - ideal for space-constrained 1U server PSUs

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: High-density 1U/2U AC-DC front-end with active PFC and LLC resonant secondary. IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost PFC stage operating at 65–100 kHz. Use Value: 0.137 Ω R_DS(on) and 24 nC Q_g reduce total losses by 1.8 W vs. legacy 600 V MOSFETs, enabling 96%+ efficiency at 230 V AC input.	Use Scenario: 48 V DC output rectifier with hold-up time >20 ms and peak load >2 kW. IC Role / Device Role / Timing Role: Main switch in dual-active-bridge (DAB) isolated DC-DC converter handling 3.3 kW power transfer. Use Value: 179 mJ E_AS and 5 V/ns diode dv/dt rating ensure robustness during rapid load transients and fault clearing without snubber circuits.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: Three-phase string inverter with MPPT and transformerless topology operating at 50–60 kHz switching frequency. IC Role / Device Role / Timing Role: DC-link switch in H-bridge inverter leg driving grid-synchronized sinusoidal output. Use Value: Low C_o(er) (58 pF) and fast t_rr (291 ns) suppress shoot-through risk and reduce EMI filter size by 30% in Class B compliance designs.	Use Scenario: 3 kW variable-frequency drive for HVAC compressors with regenerative braking capability. IC Role / Device Role / Timing Role: Inverter leg switch in six-pack IGBT/MOSFET module replacement for improved efficiency at partial load. Use Value: 19 A continuous ID and 43 A pulsed IDM support 150% overload for 60 s while maintaining TJ < 150 °C with standard heatsinking.

Server Power Supplies

Telecom Rectifiers

Use Scenario: High-density 1U/2U AC-DC front-end with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost PFC stage operating at 65–100 kHz.

Use Value: 0.137 Ω R_DS(on) and 24 nC Q_g reduce total losses by 1.8 W vs. legacy 600 V MOSFETs, enabling 96%+ efficiency at 230 V AC input.

Use Scenario: 48 V DC output rectifier with hold-up time >20 ms and peak load >2 kW.

IC Role / Device Role / Timing Role: Main switch in dual-active-bridge (DAB) isolated DC-DC converter handling 3.3 kW power transfer.

Use Value: 179 mJ E_AS and 5 V/ns diode dv/dt rating ensure robustness during rapid load transients and fault clearing without snubber circuits.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: Three-phase string inverter with MPPT and transformerless topology operating at 50–60 kHz switching frequency.

IC Role / Device Role / Timing Role: DC-link switch in H-bridge inverter leg driving grid-synchronized sinusoidal output.

Use Value: Low C_o(er) (58 pF) and fast t_rr (291 ns) suppress shoot-through risk and reduce EMI filter size by 30% in Class B compliance designs.

Use Scenario: 3 kW variable-frequency drive for HVAC compressors with regenerative braking capability.

IC Role / Device Role / Timing Role: Inverter leg switch in six-pack IGBT/MOSFET module replacement for improved efficiency at partial load.

Use Value: 19 A continuous ID and 43 A pulsed IDM support 150% overload for 60 s while maintaining TJ < 150 °C with standard heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.055 Ω, Q_g = 72 nC, TO-247 package	Higher current rating but 3× higher gate charge increases driver complexity and switching loss at >50 kHz	Preferred for lower-frequency (<30 kHz), high-current industrial inverters where thermal mass dominates
IXFH30N60X	600 V, 30 A, R_DS(on) = 0.135 Ω, Q_g = 45 nC, TO-247 package	Similar R_DS(on) but 88% higher Q_g and no Kelvin source pin, limiting high-frequency PFC performance	Suitable for cost-sensitive 50 Hz–20 kHz motor drives where gate drive simplicity outweighs efficiency optimization

Compared with STW62N60M2 and IXFH30N60X, SIHK155N60E-T1-GE3 offers superior high-frequency efficiency due to its 24 nC Q_g, Kelvin source pin, and 0.96 °C/W R_thJC - making it the preferred choice for compact, high-efficiency 65–300 kHz server, telecom, and solar power stages.

Availability

SIHK155N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIHK155N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and automotive-grade qualification.

The E Series Power MOSFET product line targets high-efficiency AC-DC conversion, PFC, and DC-DC power stages in datacenter, telecom, and renewable energy systems - prioritizing low FOM, rugged avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHK155N60E-T1-GE3 at 100 °C case temperature?

The SIHK155N60E-T1-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink conditions and must be used for thermal design validation - not the 19 A rating at 25 °C, which assumes ideal cooling.

Does SIHK155N60E-T1-GE3 support logic-level gate drive?

No, SIHK155N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and R_DS(on) is specified at V_GS = 10 V. It requires a 10 V gate drive for full enhancement and minimum on-resistance; 5 V drive results in significantly higher R_DS(on) and conduction loss.

What is the significance of the "Kelvin source" (pin 2) on SIHK155N60E-T1-GE3?

The Kelvin source (pin 2) on SIHK155N60E-T1-GE3 provides a dedicated low-inductance reference for the gate driver, isolating gate loop current from high-power source return paths. This prevents voltage spikes caused by common-source inductance during fast switching, ensuring stable turn-on/turn-off behavior and reducing EMI in high-dI/dt applications like PFC.

Can SIHK155N60E-T1-GE3 replace older Vishay SiHK150N60EF in existing designs?

Yes, SIHK155N60E-T1-GE3 is a direct drop-in replacement for SiHK150N60EF, sharing identical PowerPAK 10 x 12 package, pinout, and voltage rating. It improves R_DS(on) from 0.150 Ω to 0.137 Ω and reduces Q_g from 38 nC to 24 nC, delivering measurable efficiency gains without layout changes.

What is the recommended PCB land pattern for SIHK155N60E-T1-GE3?

The official Vishay-recommended land pattern for SIHK155N60E-T1-GE3 is documented in drawing 92489 (Revision 26-Dec-2022), specifying a 12.88 mm × 9.90 mm thermal pad with 8× 0.85 mm solder vias and defined copper pour geometry. Deviation risks exceeding R_thJC = 0.96 °C/W and premature thermal failure under sustained 12 A load.

SIHK155N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1514 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK155N60E-T1-GE3 FAQ

1.How can I place an order for SIHK155N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK155N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK155N60E-T1-GE3 reliable?

The price and inventory of SIHK155N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK155N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHK155N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK155N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK155N60E-T1-GE3?

SIHK155N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK155N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK155N60E-T1-GE3?

For technical support, including SIHK155N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK155N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHK155N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK155N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK155N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHK155N60E-T1-GE3?

All SIHK155N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK155N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK155N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHK155N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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