Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK185N60EF-T1GE3

Name: SIHK185N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHK185N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHK185N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK185N60EF-T1GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHK185N60EF-T1GE3 from Vishay Siliconix is a 600 V, 16 A N-channel Power MOSFET in PowerPAK® 10 x 12 package with R_DS(on) = 0.168 Ω (typ, V_GS = 10 V), Q_g = 21 nC (typ), and fast body diode (t_rr = 111 ns). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK185N60EF-T1GE3 datasheet, SIHK185N60EF-T1GE3 pinout, SIHK185N60EF-T1GE3 application, or SIHK185N60EF-T1GE3 equivalent, key selection criteria include its 600 V V_DS, 1.1 °C/W R_thJC, avalanche-rated E_AS = 24 mJ, Co(er) = 40 pF, and fast-recovery body diode optimized for hard-switched and resonant topologies.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology, featuring reduced effective output capacitance (Co(er) = 40 pF) and low gate charge (Q_g = 21 nC typ) to minimize switching loss in continuous conduction mode (CCM) PFC and LLC resonant converters. Its 1.1 °C/W junction-to-case thermal resistance enables high-power density designs without forced airflow.

The integrated fast body diode supports ZVS/ZCS transitions with t_rr = 111 ns (typ) and Q_rr = 0.6 μC (typ) at 25 °C, while maintaining robust UIS capability (E_AS = 24 mJ) and dv/dt immunity up to 100 V/ns (T_J = 125 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full-line rectified input in 380–400 VDC PFC stages without derating
R_DS(on) max	0.193 Ω - Limits conduction loss to ≤1.75 W at 9.5 A DC, enabling compact heatsinking
Q_g max	32 nC - Enables efficient gate drive with <1 W driver loss at 100 kHz switching
t_rr	111 ns (typ) - Reduces diode recovery loss and EMI in hard-switched bridge legs
E_AS	24 mJ - Supports unclamped inductive switching in motor drives and welders without snubbers
R_thJC	1.1 °C/W - Allows >100 W dissipation with minimal case-to-heatsink ΔT in PowerPAK 10×12 footprint
C_oss(er)	40 pF - Low energy-related output capacitance improves light-load efficiency in resonant converters

Pinout & Package

Package: PowerPAK® 10 × 12 (TOLL), surface-mount, drain-connected tab, RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Drain (tab)	High-current power return path	Exposed copper tab soldered to PCB ground plane for low-inductance, low-thermal-resistance heat transfer
Pin 1	Gate	Control terminal requiring <32 nC total charge; sensitive to ESD (±30 V rating)
Pins 2–8	Source	Parallel-source configuration reduces source inductance and improves current sharing in paralleled layouts

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	3.39 Ω·nC - Balances conduction and switching loss for optimal 65–100 kHz PFC operation
Avalanche-rated (UIS)	24 mJ single-pulse - Eliminates need for external clamping in inductive load switching
Fast body diode	t_rr = 111 ns, Q_rr = 0.6 μC - Enables ZVS in half-bridge LLC and reduces diode-induced voltage spikes
Low C_oss(er)	40 pF - Minimizes capacitive turn-on loss during zero-voltage switching transitions
High dv/dt immunity	100 V/ns at T_J = 125 °C - Ensures reliable operation in noisy high-dV/dt environments like motor drives

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Active clamp forward or totem-pole PFC stage in 3 kW rack-mounted server PSU. IC Role / Device Role / Timing Role: Main switching device in high-side switch leg, operating at 65–100 kHz with 400 VDC bus. Use Value: 0.168 Ω R_DS(on) and 21 nC Q_g reduce total losses by ≥12% vs. legacy 650 V MOSFETs, improving system efficiency to >96.5%.	Use Scenario: Output synchronous rectification in 48 V telecom rectifier with 1200 W output. IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge, handling 16 A continuous current with tight thermal constraints. Use Value: 1.1 °C/W R_thJC allows direct mounting to aluminum baseplate, eliminating thermal interface material and reducing thermal stack height.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string-level MPPT converter with 1000 VDC max input. IC Role / Device Role / Timing Role: High-voltage switch in boost stage, subjected to repetitive unclamped inductive stress during MPPT transients. Use Value: 24 mJ E_AS rating ensures reliable operation under worst-case line surges without additional protection circuitry.	Use Scenario: IGBT replacement in 7.5 kW VFD inverter leg for HVAC compressors. IC Role / Device Role / Timing Role: Hard-switched 600 V switch in 3-phase inverter output stage, operating at 8–16 kHz with fast body diode commutation. Use Value: 111 ns t_rr and low Q_rr suppress shoot-through risk and reduce diode reverse recovery loss by 35% vs. standard MOSFETs.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Active clamp forward or totem-pole PFC stage in 3 kW rack-mounted server PSU.

IC Role / Device Role / Timing Role: Main switching device in high-side switch leg, operating at 65–100 kHz with 400 VDC bus.

Use Value: 0.168 Ω R_DS(on) and 21 nC Q_g reduce total losses by ≥12% vs. legacy 650 V MOSFETs, improving system efficiency to >96.5%.

Use Scenario: Output synchronous rectification in 48 V telecom rectifier with 1200 W output.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge, handling 16 A continuous current with tight thermal constraints.

Use Value: 1.1 °C/W R_thJC allows direct mounting to aluminum baseplate, eliminating thermal interface material and reducing thermal stack height.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string-level MPPT converter with 1000 VDC max input.

IC Role / Device Role / Timing Role: High-voltage switch in boost stage, subjected to repetitive unclamped inductive stress during MPPT transients.

Use Value: 24 mJ E_AS rating ensures reliable operation under worst-case line surges without additional protection circuitry.

Use Scenario: IGBT replacement in 7.5 kW VFD inverter leg for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched 600 V switch in 3-phase inverter output stage, operating at 8–16 kHz with fast body diode commutation.

Use Value: 111 ns t_rr and low Q_rr suppress shoot-through risk and reduce diode reverse recovery loss by 35% vs. standard MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.065 Ω, TO-247 package, Q_g = 65 nC	Higher current rating but larger footprint and higher gate drive requirement	Preferred for higher-current, lower-frequency (<50 kHz) industrial inverters where layout space permits TO-247
IXFH32N60P	600 V, 32 A, R_DS(on) = 0.15 Ω, TO-247 package, Q_g = 62 nC, no specified t_rr	Larger package, higher Q_g, and unspecified body diode performance limits use in ZVS topologies	Suitable for non-resonant SMPS where fast diode recovery is not required and thermal mass is available

Compared with STW62N60M2 and IXFH32N60P, SIHK185N60EF-T1GE3 offers superior power density (PowerPAK 10×12 vs. TO-247), lower Q_g, and characterized fast body diode behavior-making it optimal for space-constrained, high-frequency PFC and resonant converter designs.

Availability

SIHK185N60EF-T1GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHK185N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The EF Series MOSFETs-including SIHK185N60EF-T1GE3-are engineered for high-efficiency, high-density AC/DC and DC/DC conversion in enterprise and industrial power systems where low R_DS(on) × Q_g and fast body diode performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHK185N60EF-T1GE3 at 100 °C case temperature?

The SIHK185N60EF-T1GE3 has a continuous drain current rating of 10 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 16 A rating at 25 °C, based on a linear derating factor of 0.9 W/°C and R_thJC = 1.1 °C/W. Designers must ensure heatsinking maintains T_C ≤ 100 °C for sustained 10 A operation.

Does SIHK185N60EF-T1GE3 have a specified reverse recovery time (t_rr) for its body diode?

Yes, SIHK185N60EF-T1GE3 specifies t_rr = 111 ns (typical) and 222 ns (maximum) at T_J = 25 °C, I_F = 9.5 A, di/dt = 100 A/μs, and V_R = 400 V. This value is measured per JEDEC standard and confirms its suitability for hard-switched topologies where body diode commutation occurs, such as in totem-pole PFC and half-bridge LLC converters.

What is the gate threshold voltage range for SIHK185N60EF-T1GE3?

The gate threshold voltage V_GS(th) for SIHK185N60EF-T1GE3 is specified as 3.0 V minimum to 5.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious conduction in high-dv/dt environments typical of power converter applications.

Is SIHK185N60EF-T1GE3 suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, SIHK185N60EF-T1GE3 is avalanche energy rated with E_AS = 24 mJ (single pulse, test condition: V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.3 A). This rating validates its robustness in unclamped inductive switching events common in motor drives, welding equipment, and PFC circuits during transient overloads.

What is the thermal resistance from junction to case (R_thJC) for SIHK185N60EF-T1GE3, and how does it impact heatsink design?

The SIHK185N60EF-T1GE3 has a maximum junction-to-case thermal resistance R_thJC of 1.1 °C/W. This low value-enabled by its exposed-drain PowerPAK® 10 × 12 package-means that for a 100 W power dissipation scenario, the junction-to-case temperature rise is only 110 °C. Combined with its 150 °C max T_J, this allows compact heatsink solutions even in convection-cooled telecom and server applications.

SIHK185N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 193mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK185N60EF-T1GE3 FAQ

1.How can I place an order for SIHK185N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK185N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK185N60EF-T1GE3 reliable?

The price and inventory of SIHK185N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK185N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHK185N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK185N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK185N60EF-T1GE3?

SIHK185N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK185N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK185N60EF-T1GE3?

For technical support, including SIHK185N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK185N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHK185N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK185N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK185N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHK185N60EF-T1GE3?

All SIHK185N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK185N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK185N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHK185N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …