Vishay Siliconix SIHK185N60E-T1-GE3

Overview

SIHK185N60E-T1-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel Power MOSFET in PowerPAK® 10 x 12 (TOLL) package with R_DS(on) = 0.160 Ω at V_GS = 10 V, Q_g = 22 nC (typ), and Kelvin-source configuration for gate noise reduction-designed for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHK185N60E-T1-GE3 datasheet, SIHK185N60E-T1-GE3 pinout, SIHK185N60E-T1-GE3 application, or SIHK185N60E-T1-GE3 equivalent, key selection criteria include its 75 mJ UIS rating, 59 pF Co(er), 1.1 °C/W R_thJC, and low FOM (R_DS(on) × Q_g = 3.52 Ω·nC), critical for minimizing switching and conduction losses in hard-switched 600 V topologies.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for high-voltage, medium-current applications requiring robust avalanche capability and reduced gate charge. Its Kelvin-source connection isolates driver return path from high di/dt source current, suppressing gate oscillation during fast switching.

The device features low effective output capacitance (Co(er) = 59 pF, Co(tr) = 301 pF), enabling efficient operation in continuous conduction mode (CCM) PFC and resonant LLC converters. Its 100 V/ns dv/dt rating at T_J = 125 °C supports stable operation under high-speed voltage transients.

Key Specifications

Pinout & Package

Package: PowerPAK® 10 x 12 (TOLL) - thermally enhanced surface-mount package with exposed drain tab on bottom side for direct PCB heatsinking; 8-pin layout with Kelvin-source configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N60M2 and IXFH60N60X, the SIHK185N60E-T1-GE3 delivers superior high-frequency efficiency due to its lower FOM and Kelvin-source architecture-making it optimal for compact, thermally constrained 60–100 kHz PFC and DC-DC converters where gate noise and switching loss are critical.

Availability

SIHK185N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and solar PV inverter DC-DC stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIHK185N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and thermal reliability.

The E Series Power MOSFET product line targets high-voltage, medium-current switching applications-including PFC, SMPS, and motor drives-where low FOM, avalanche robustness, and advanced packaging (e.g., Kelvin-source) deliver measurable system-level efficiency gains.

FAQ

What is the maximum continuous drain current rating for SIHK185N60E-T1-GE3 at 100 °C case temperature?

The SIHK185N60E-T1-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, derated linearly above 25 °C with a factor of 0.9 W/°C. This rating assumes proper PCB copper area per the recommended land pattern and adequate airflow or heatsinking. At T_C = 25 °C, the rating rises to 19 A, reflecting its 114 W maximum power dissipation capability.

Does SIHK185N60E-T1-GE3 support logic-level gate drive?

No, SIHK185N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–5.0 V, and it is specified for R_DS(on) at V_GS = 10 V. For reliable enhancement-mode operation and low on-resistance, a 10–15 V gate drive is required. Using 5 V logic-level drive would result in incomplete turn-on and excessive conduction loss.

What is the significance of the "Kelvin source" configuration in SIHK185N60E-T1-GE3?

The Kelvin source in SIHK185N60E-T1-GE3 separates the gate driver's source return path (Pin 2) from the main power source terminals (Pins 3–8). This eliminates voltage drop from high di/dt source current from appearing in the gate loop, preventing false turn-on and oscillation-especially critical in high-frequency, high-power PFC and LLC converters where gate noise can cause shoot-through or EMI issues.

Can SIHK185N60E-T1-GE3 be used in avalanche mode repeatedly?

The SIHK185N60E-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 75 mJ, tested under defined conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω). It is not characterized for repetitive avalanche operation. For designs subject to repeated inductive switching stress, additional protection (e.g., clamping circuits or snubbers) is recommended to avoid cumulative junction degradation.

What is the thermal resistance from junction to case (R_thJC) for SIHK185N60E-T1-GE3, and how does it impact heatsink design?

The SIHK185N60E-T1-GE3 has a maximum R_thJC of 1.1 °C/W, measured from junction to the exposed drain tab. This low value enables efficient heat transfer directly into the PCB copper or an attached heatsink. When designing thermal management, this value must be combined with R_thCS (case-to-sink) and R_thSA (sink-to-ambient) to ensure T_J remains below 150 °C under worst-case load and ambient conditions. The PowerPAK® 10 x 12 land pattern (Document 92489) is mandatory for achieving this spec.