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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHL620S-GE3

Name: SIHL620S-GE3
Brand: Vishay Siliconix
SKU: SIHL620S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHL620S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHL620S-GE3.pdf

Description:: LOGIC MOSFET N-CHANNEL 200V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHL620S-GE3 from Vishay Siliconix is a 200 V, 5.2 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.80 Ω at V_GS = 10 V, and repetitive avalanche rating (I_AR = 5.2 A). It is designed for high-current DC-DC converters and motor control circuits requiring rugged switching under inductive loads.

For engineers reviewing the SIHL620S-GE3 datasheet, SIHL620S-GE3 pinout, SIHL620S-GE3 application, or SIHL620S-GE3 equivalent, key selection criteria include its 200 V V_DS, 16 nC total gate charge, 5.2 A continuous drain current at T_C = 25 °C, and D2PAK thermal performance (R_thJC = 2.5 °C/W), critical for board-level power density and thermal management.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for fast switching and ruggedized avalanche operation. Its dynamic dV/dt rating (5.0 V/ns) and unclamped inductive switching capability (E_AS = 125 mJ) support reliable operation in hard-switched topologies with high di/dt transients.

The device integrates a low-Q_gd/Q_g ratio (9.6/16 nC) and low output capacitance (C_oss = 91 pF), enabling efficient zero-voltage switching (ZVS) assist and reduced switching losses in resonant converters. Body diode recovery (t_rr = 180–270 ns, Q_rr = 1.1–1.7 μC) is characterized for synchronous rectification and freewheeling applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with margin
R_DS(on) max	0.80 Ω at V_GS = 10 V - enables ≤2.5 W conduction loss at 5.2 A, suitable for medium-power switching
Q_g	16 nC - determines gate driver strength requirement; compatible with standard 1-A peak drivers
I_D continuous	5.2 A at T_C = 25 °C - defines PCB copper area and heatsinking needs for sustained load conditions
E_AS	125 mJ - quantifies single-pulse energy handling during inductive turn-off, critical for relay/snubberless designs
R_thJC	2.5 °C/W - allows direct case-to-heatsink thermal path; enables >30 W dissipation with 75 °C ΔT
t_rr	180–270 ns - sets minimum dead-time in half-bridge configurations to prevent shoot-through

Pinout & Package

D2PAK (TO-263) package: surface-mount, isolated thermal pad (drain-connected), 3-terminal configuration with 4.06–4.83 mm height, 8.38–9.65 mm width, and 9.65–10.67 mm length per JEDEC MS-013. Thermal pad must be soldered to large copper pour for rated power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	Main power output terminal and thermal interface	Electrically connected to die drain; requires full-solder coverage of thermal pad for R_thJC = 2.5 °C/W performance
Pin 1 (Gate)	Control input for channel modulation	Logic-compatible (V_GS(th) ≤ 2.0 V); requires <16 nC charge for full enhancement; sensitive to ESD
Pin 3 (Source)	Power return and reference node for gate drive	Serves as local ground for gate loop; internal source inductance (L_S = 7.5 nH) impacts switching waveform ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) ≤ 1.0 Ω), eliminating need for gate boosters in 3.3 V/5 V microcontroller interfaces
Repetitive avalanche rated	Rated for I_AR = 5.2 A pulses (T_J ≤ 150 °C), enabling robust operation in flyback snubberless or solenoid drive circuits
Dynamic dV/dt immunity	Specified at 5.0 V/ns - suppresses false turn-on during high-speed voltage transients in bridge legs
Low Q_gd/Q_g ratio	60 % of total gate charge resides in Miller region (9.6/16 nC), improving controllability during switching transitions
RoHS-compliant, halogen-free	Meets IEC 61249-2-21 and JEDEC J-STD-609A Class 1 standards; Pb-free matte tin terminations

Applications

DC-DC Converter Primary Switch	Industrial Motor Driver Half-Bridge
Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 200 kHz. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; duty-cycle modulated by PWM controller. Use Value: Low R_DS(on) (0.80 Ω) minimizes conduction loss at 5 A load; fast t_r/t_f (31 ns/17 ns) reduces switching loss contribution.	Use Scenario: 24 V brushed DC motor H-bridge driving 3 A stall current in factory automation actuator. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; commutated at ≤10 kHz with PWM speed control. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; logic-level gate simplifies MCU GPIO direct drive.
AC-DC Adapter Flyback Switch	LED Driver Constant-Current Switch
Use Scenario: 85–265 V AC input offline flyback adapter delivering 12 V/1.5 A with primary-side regulation. IC Role / Device Role / Timing Role: Primary-side power switch clamping reflected output voltage and conducting magnetizing current. Use Value: 200 V V_DS provides 30 % margin over 1.414 × 265 V = 375 V peak line; E_AS = 125 mJ handles unclamped leakage inductance spikes.	Use Scenario: 36 V constant-voltage LED string driver with analog dimming via MOSFET current shunt. IC Role / Device Role / Timing Role: Linear-mode current regulator placed in series with LED string, dissipating excess voltage. Use Value: R_DS(on) tolerance and thermal stability (ΔR_DS(on)/TJ = +0.27 %/°C) ensure consistent current regulation across -40 to +125 °C ambient.

DC-DC Converter Primary Switch

Industrial Motor Driver Half-Bridge

Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 200 kHz.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; duty-cycle modulated by PWM controller.

Use Value: Low R_DS(on) (0.80 Ω) minimizes conduction loss at 5 A load; fast t_r/t_f (31 ns/17 ns) reduces switching loss contribution.

Use Scenario: 24 V brushed DC motor H-bridge driving 3 A stall current in factory automation actuator.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; commutated at ≤10 kHz with PWM speed control.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; logic-level gate simplifies MCU GPIO direct drive.

AC-DC Adapter Flyback Switch

LED Driver Constant-Current Switch

Use Scenario: 85–265 V AC input offline flyback adapter delivering 12 V/1.5 A with primary-side regulation.

IC Role / Device Role / Timing Role: Primary-side power switch clamping reflected output voltage and conducting magnetizing current.

Use Value: 200 V V_DS provides 30 % margin over 1.414 × 265 V = 375 V peak line; E_AS = 125 mJ handles unclamped leakage inductance spikes.

Use Scenario: 36 V constant-voltage LED string driver with analog dimming via MOSFET current shunt.

IC Role / Device Role / Timing Role: Linear-mode current regulator placed in series with LED string, dissipating excess voltage.

Use Value: R_DS(on) tolerance and thermal stability (ΔR_DS(on)/TJ = +0.27 %/°C) ensure consistent current regulation across -40 to +125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL620SPbF	Same die, leaded (Pb) terminations; identical R_DS(on), Q_g, and avalanche specs	Not RoHS-compliant; restricted in EU/China electronics; requires exemption documentation	Select only if legacy Pb-based assembly process is mandated and compliance waivers apply
STP20NM20	200 V, 20 A, R_DS(on) = 0.22 Ω @ 10 V; TO-220 package; higher current, lower R_DS(on), but larger footprint and no logic-level gate	Requires gate driver for 3.3 V logic; better for high-current, low-loss designs where space and thermal mass allow TO-220 mounting	Choose when >10 A continuous current or lower conduction loss is required, and gate drive voltage ≥10 V is available

Compared with IRL620SPbF, SIHL620S-GE3 offers RoHS/halogen-free compliance without electrical trade-offs; versus STP20NM20, it trades higher R_DS(on) and lower current for surface-mount compatibility, logic-level drive, and smaller D2PAK footprint-ideal for space-constrained, low-to-medium power boards.

Availability

SIHL620S-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and LED lighting systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SIHL620S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHL620S-GE3 belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for high-current, high-voltage switching in compact industrial and consumer power supplies where logic-level drive and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for SIHL620S-GE3 at 100 °C case temperature?

The SIHL620S-GE3 supports 3.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package; designers must ensure adequate PCB copper area and airflow to maintain case temperature within this limit during sustained operation. The SIHL620S-GE3 datasheet confirms this value under standard test conditions with FR-4 mounting.

Does SIHL620S-GE3 support logic-level gate drive, and what is its threshold voltage range?

Yes, SIHL620S-GE3 is a logic-level MOSFET with gate-threshold voltage V_GS(th) specified from 1.0 V to 2.0 V at I_D = 250 μA. It achieves R_DS(on) ≤ 1.0 Ω at V_GS = 4.0 V, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry. This characteristic is explicitly confirmed in the Static Specifications table of the SIHL620S-GE3 datasheet.

What is the avalanche energy rating of SIHL620S-GE3, and how is it tested?

The SIHL620S-GE3 has a single-pulse avalanche energy rating E_AS = 125 mJ, measured under V_DD = 50 V, starting T_J = 25 °C, L = 6.9 mH, R_g = 25 Ω, and I_AS = 5.2 A per Figure 12. This rating validates its ability to absorb inductive energy during unclamped inductive switching events, such as relay coil de-energization or motor phase commutation. The SIHL620S-GE3 datasheet specifies this as a repetitive rating with pulse width limited by junction temperature.

What package type does SIHL620S-GE3 use, and what are its thermal characteristics?

SIHL620S-GE3 uses the D2PAK (TO-263AB) surface-mount package with an exposed drain thermal pad. Its thermal resistance is R_thJC = 2.5 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient on 1" FR-4 PCB). These values enable up to 50 W power dissipation at T_C = 25 °C and require full-solder coverage of the thermal pad to achieve rated performance. The SIHL620S-GE3 package drawing conforms to JEDEC MS-013.

Is SIHL620S-GE3 RoHS-compliant and halogen-free?

Yes, SIHL620S-GE3 is both RoHS-compliant and halogen-free, as indicated by the "-GE3" suffix and confirmed in the Ordering Information and Material Categorization sections of the datasheet. It meets IEC 61249-2-21 and JEDEC J-STD-609A Class 1 requirements, with matte tin (Sn) lead finish and no brominated flame retardants. This compliance is verified in Vishay document 91302, revision D.

SIHL620S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHL620S-GE3 FAQ

1.How can I place an order for SIHL620S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHL620S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHL620S-GE3 reliable?

The price and inventory of SIHL620S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHL620S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHL620S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHL620S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHL620S-GE3?

SIHL620S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHL620S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHL620S-GE3?

For technical support, including SIHL620S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHL620S-GE3 requirements.

6.How does Aetrix verify that SIHL620S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHL620S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHL620S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHL620S-GE3?

All SIHL620S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHL620S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHL620S-GE3 part is unused and in its original packaging.

Return procedure for SIHL620S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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