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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHL620STRL-GE3

Name: SIHL620STRL-GE3
Brand: Vishay Siliconix
SKU: SIHL620STRL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHL620STRL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHL620STRL-GE3.pdf

Description:: LOGIC MOSFET N-CHANNEL 200V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHL620STRL-GE3 from Vishay Siliconix is a 200 V, 5.2 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.80 Ω at V_GS = 10 V, and repetitive avalanche rating (E_AR = 5.0 mJ). It is designed for high-current DC-DC converters and motor control circuits requiring rugged switching under inductive loads.

For engineers reviewing the SIHL620STRL-GE3 datasheet, SIHL620STRL-GE3 pinout, SIHL620STRL-GE3 application, or SIHL620STRL-GE3 equivalent, key selection criteria include its 200 V V_DS, 5.2 A continuous drain current at T_C = 25 °C, 16 nC total gate charge, 2.5 °C/W junction-to-case thermal resistance, and RoHS-compliant lead-free/halogen-free construction per ordering code GE3.

Technical Context

This third-generation power MOSFET employs planar silicon technology optimized for fast switching and low conduction loss. Its dynamic dV/dt rating (5.0 V/ns) and unclamped inductive switching capability support robust operation in hard-switched topologies without external snubbers.

The device integrates a body diode with t_rr = 180–270 ns and Q_rr = 1.1–1.7 μC, enabling moderate-frequency synchronous rectification or freewheeling in buck and half-bridge configurations. Gate charge distribution (Q_gs = 2.9 nC, Q_gd = 9.6 nC) indicates Miller plateau dominance, requiring careful gate driver sizing to minimize switching losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports input rails up to 170 V DC in offline or industrial power supplies.
R_DS(on) max	0.80 Ω at V_GS = 10 V - Delivers ≤2.0 W conduction loss at 5 A, suitable for thermally constrained PCB-mount designs.
Q_g	16 nC - Requires ≥1 A peak gate drive for <100 ns turn-on in 100 kHz+ SMPS applications.
I_D cont	5.2 A at T_C = 25 °C - Enables 40–50 W load handling with standard 1"² FR-4 heatsinking.
E_AS	125 mJ - Withstands single-pulse inductive energy spikes without failure in motor gate drivers.
R_thJC	2.5 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad for high-power density layouts.
t_r/t_f	31 ns / 17 ns - Supports >500 kHz switching with minimal overlap loss when paired with low-inductance layout.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; 10.67 mm × 9.65 mm footprint; 15.88 mm maximum height; RoHS-compliant matte tin plating over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Logic-level input (V_GS(th) ≤ 2.0 V); requires <100 nF local bypass to suppress ringing during fast transitions.
Pin 2 (D)	Drain	Exposed metal pad on underside - must be soldered to large copper pour for thermal dissipation and low-inductance high-current path.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; internal source inductance (L_S = 7.5 nH) impacts diode recovery behavior.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) ≤ 1.0 Ω), enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting.
Repetitive avalanche rated	Rated for 5.2 A repetitive avalanche current (I_AR) and 5.0 mJ energy (E_AR), supporting reliable operation in inductive switching without external clamping.
Dynamic dV/dt immunity	Guaranteed 5.0 V/ns dV/dt rating prevents false turn-on during high-slew-rate voltage transients in half-bridge legs.
Low Q_gd/Q_g ratio	Q_gd = 9.6 nC of total Q_g = 16 nC (60%) - indicates strong Miller effect; necessitates gate resistor tuning to balance speed vs. voltage overshoot.
Body diode softness	t_rr = 180–270 ns with soft recovery waveform - reduces EMI and voltage spikes during freewheeling in buck regulators.

Applications

Industrial Motor Drives	DC-DC Converters
Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor controllers. IC Role / Device Role / Timing Role: High-side and low-side switching element managing PWM-controlled phase current. Use Value: Repetitive avalanche rating absorbs inductive kickback during commutation; 5.2 A I_D supports 300 W mechanical output with forced-air cooling.	Use Scenario: Synchronous rectifier in isolated 48 V → 12 V telecom DC-DC module. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss. Use Value: R_DS(on) = 0.80 Ω cuts rectifier loss by >40% vs. 40 V Schottky at 5 A, improving efficiency from 92% to 94.5%.
Power Over Ethernet (PoE) PSE	LED Driver Circuits
Use Scenario: 200 V primary switch in PoE++ (IEEE 802.3bt) power sourcing equipment. IC Role / Device Role / Timing Role: Constant-current switch regulating up to 90 W delivered power per port. Use Value: V_DS = 200 V headroom accommodates 100 V surge testing and line transients while maintaining safety margin.	Use Scenario: Dimmable constant-current LED string switch in architectural lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled current regulator driving 10–20 V, 350–700 mA LED loads. Use Value: Logic-level gate enables direct PWM from 3.3 V MCU; low R_DS(on) minimizes self-heating in enclosed housings.

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor controllers.

IC Role / Device Role / Timing Role: High-side and low-side switching element managing PWM-controlled phase current.

Use Value: Repetitive avalanche rating absorbs inductive kickback during commutation; 5.2 A I_D supports 300 W mechanical output with forced-air cooling.

Use Scenario: Synchronous rectifier in isolated 48 V → 12 V telecom DC-DC module.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss.

Use Value: R_DS(on) = 0.80 Ω cuts rectifier loss by >40% vs. 40 V Schottky at 5 A, improving efficiency from 92% to 94.5%.

Power Over Ethernet (PoE) PSE

LED Driver Circuits

Use Scenario: 200 V primary switch in PoE++ (IEEE 802.3bt) power sourcing equipment.

IC Role / Device Role / Timing Role: Constant-current switch regulating up to 90 W delivered power per port.

Use Value: V_DS = 200 V headroom accommodates 100 V surge testing and line transients while maintaining safety margin.

Use Scenario: Dimmable constant-current LED string switch in architectural lighting fixtures.

IC Role / Device Role / Timing Role: PWM-controlled current regulator driving 10–20 V, 350–700 mA LED loads.

Use Value: Logic-level gate enables direct PWM from 3.3 V MCU; low R_DS(on) minimizes self-heating in enclosed housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR620PbF	V_DS = 200 V, R_DS(on) = 0.85 Ω at V_GS = 10 V, Q_g = 17 nC; Pb-based termination, non-RoHS.	Limited to legacy industrial designs where RoHS exemption applies; identical thermal and switching performance.	Select only if Pb-content compliance is waived and existing qualification data exists for IR-series footprint.
STP20NM20	V_DS = 200 V, R_DS(on) = 0.22 Ω at V_GS = 10 V, Q_g = 25 nC; TO-220 package, higher current rating (20 A).	Requires through-hole assembly and larger heatsink; better for >10 A continuous loads but incompatible with D2PAK land pattern.	Choose when higher current capacity is needed and board assembly process supports through-hole components.

Compared with IRLR620PbF and STP20NM20, SIHL620STRL-GE3 offers RoHS/halogen-free compliance in surface-mount D2PAK, balancing 5.2 A capability, 0.80 Ω on-resistance, and 16 nC gate charge for space-constrained, medium-power switching where lead-free manufacturing is required.

Availability

SIHL620STRL-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and Power over Ethernet (PoE) power sourcing equipment requiring stable component supply and long-term production continuity.

Supply support for SIHL620STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-efficiency performance.

The SIHL620STRL-GE3 belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for high-current, medium-voltage switching in space-constrained industrial and telecom power systems.

FAQ

What is the maximum continuous drain current for SIHL620STRL-GE3 at 100 °C case temperature?

The SIHL620STRL-GE3 supports 3.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package under sustained high-temperature operation and must be validated against actual board-level thermal design using R_thJC = 2.5 °C/W.

Does SIHL620STRL-GE3 support logic-level gate drive at 3.3 V?

SIHL620STRL-GE3 is characterized for logic-level operation down to V_GS = 4.0 V (R_DS(on) ≤ 1.0 Ω), but not guaranteed at 3.3 V. At 3.3 V, R_DS(on) increases significantly beyond datasheet limits; use with 3.3 V controllers requires verification of on-resistance and power dissipation under worst-case conditions.

What is the avalanche energy rating for SIHL620STRL-GE3?

The SIHL620STRL-GE3 is rated for 125 mJ single-pulse avalanche energy (E_AS) and 5.0 mJ repetitive avalanche energy (E_AR). These values are measured under defined test conditions (V_DD = 50 V, L = 6.9 mH, I_AS = 5.2 A) and define safe operating limits during unclamped inductive switching events.

Can SIHL620STRL-GE3 replace IRL620STRLPbF in new designs?

Yes - SIHL620STRL-GE3 is the RoHS-compliant, halogen-free replacement for IRL620STRLPbF, sharing identical electrical specifications, D2PAK package, and pinout. The "GE3" suffix denotes lead-free/halogen-free construction, making SIHL620STRL-GE3 suitable for new environmentally compliant designs without layout changes.

What is the typical reverse recovery time of the body diode in SIHL620STRL-GE3?

The body diode of SIHL620STRL-GE3 exhibits a typical reverse recovery time (t_rr) of 180–270 ns at T_J = 25 °C, I_F = 5.2 A, and dI/dt = 100 A/μs. This soft-recovery characteristic helps minimize voltage overshoot and EMI in freewheeling applications such as buck converters.

SIHL620STRL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHL620STRL-GE3 FAQ

1.How can I place an order for SIHL620STRL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHL620STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHL620STRL-GE3 reliable?

The price and inventory of SIHL620STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHL620STRL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHL620STRL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHL620STRL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHL620STRL-GE3?

SIHL620STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHL620STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHL620STRL-GE3?

For technical support, including SIHL620STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHL620STRL-GE3 requirements.

6.How does Aetrix verify that SIHL620STRL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHL620STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHL620STRL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHL620STRL-GE3?

All SIHL620STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHL620STRL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHL620STRL-GE3 part is unused and in its original packaging.

Return procedure for SIHL620STRL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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