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Vishay Siliconix SIHL630STRL-GE3
- Part No.:
- SIHL630STRL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHL630STRL-GE3.pdf
- Description:
- MOSFET N-CH 200V 9A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,650
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Product details
Overview
SIHL630STRL-GE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V VDS, 9.0 A continuous drain current at TC = 25 °C, and 0.40 Ω RDS(on) at VGS = 5 V. It supports fast switching in high-current DC-DC converters and motor control circuits with repetitive avalanche capability and 150 °C operation.
For engineers reviewing the SIHL630STRL-GE3 datasheet, SIHL630STRL-GE3 pinout, SIHL630STRL-GE3 application, or SIHL630STRL-GE3 equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low on-resistance at 4 V/5 V, 40 nC total gate charge, and surface-mount D2PAK thermal performance (RthJC = 1.7 °C/W).
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for ruggedness and cost-effective switching. Its design integrates dynamic dv/dt immunity, unclamped inductive switching robustness (EAS = 250 mJ), and body diode recovery characteristics (trr = 230–350 ns, Qrr = 1.7–2.6 μC) suitable for hard-switched topologies.
The MOSFET features a single N-channel configuration with source-drain diode co-packaged in the same die. Gate drive is optimized for 4–5 V logic-level controllers, and its SOA is defined up to 100 ms pulses with RDS(on)-limited conduction boundary - enabling reliable operation in overcurrent-limited power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports input rails up to 160 V DC in industrial SMPS and motor drives without derating. |
| RDS(on) @ VGS = 5 V | 0.40 Ω max - Enables <1.8 W conduction loss at 9.0 A, critical for thermally constrained PCB-mount designs. |
| Qg | 40 nC max - Determines gate driver current requirement (~1.3 A peak for 30 ns rise time with 30 Ω Rg). |
| ID (continuous, TC = 25 °C) | 9.0 A - Sustains full-load current in compact D2PAK footprint without external heatsink under forced-air cooling. |
| EAS | 250 mJ - Absorbs energy during unclamped inductive turn-off events in relay drivers or solenoid controls. |
| TJ range | –55 to +150 °C - Qualified for extended-temperature industrial and automotive under-hood auxiliary systems. |
| dv/dt rating | 5.0 V/ns - Resists false triggering in noisy high-dv/dt environments like half-bridge gate nodes. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; requires ≤2.0 V threshold for turn-on; low Ciss (1100 pF) eases drive design. |
| 2 (D) | Drain | Main high-side switching node; tied to exposed metal tab for thermal path to PCB; voltage-rated to 200 V. |
| 3 (S) | Source | Power return reference; connects internally to body diode cathode; used as gate drive reference in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry. |
| Repetitive avalanche rated | Rated for unlimited repetitive EAR = 7.4 mJ events - supports robust operation in inductive load switching without snubbers. |
| D2PAK thermal performance | RthJC = 1.7 °C/W allows >70 W power dissipation with minimal case-to-heatsink thermal resistance. |
| Body diode with soft recovery | trr = 230–350 ns and Qrr = 1.7–2.6 μC reduce switching losses and EMI in synchronous rectification and freewheeling paths. |
| RoHS-compliant & halogen-free | Meets IEC 61249-2-21; lead (Pb)-free terminations and halogen-free molding compound support green manufacturing requirements. |
Applications
| Brushless DC Motor Driver | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Half-bridge leg in 24–48 V BLDC inverters driving fans, pumps, or compressors. IC Role / Device Role / Timing Role: Low-side switch handling PWM-controlled phase current with fast turn-off (tf = 33 ns) to minimize shoot-through risk. Use Value: 0.40 Ω RDS(on) reduces conduction loss by ~35% vs. legacy 0.62 Ω equivalents, improving efficiency at 5–9 A loads. |
Use Scenario: Primary-side switch in isolated flyback or forward converters powering PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage switching element operating at 65–100 kHz with 200 V blocking capability and dv/dt immunity. Use Value: 5.0 V/ns dv/dt rating prevents spurious turn-on during transformer leakage spikes, eliminating need for gate clamping networks. |
| Solenoid & Relay Driver | Overcurrent Protection Switch |
|
Use Scenario: High-side driver for 12–24 V solenoids in HVAC actuators or fluid control valves. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via built-in avalanche capability (EAS = 250 mJ). Use Value: Eliminates external TVS or snubber components, reducing BOM count and board space in compact valve control PCBs. |
Use Scenario: Solid-state replacement for electromechanical fuses in battery management and power distribution units. IC Role / Device Role / Timing Role: Current-limiting switch with precise thermal shutdown margin (TJ(max) = 150 °C) and fast fault response. Use Value: 150 °C junction rating enables sustained operation at ambient temperatures up to 85 °C without derating in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL630SPbF | Same die, Pb-containing terminations; identical RDS(on), Qg, and avalanche specs; RoHS non-compliant. | Restricted to legacy industrial equipment where Pb exemption applies; not suitable for new EU/China RoHS designs. | Select only if compliance documentation mandates Pb-based assembly or legacy rework compatibility is required. |
| STP20NM60FD | 600 V VDS, 0.30 Ω RDS(on) @ 10 V, higher Qg (65 nC); TO-220 package; no logic-level gate (VGS(th) = 2–4 V). | Better for higher bus voltages (>300 V) but requires gate driver for 3.3 V logic; unsuitable for space-constrained SMT layouts. | Choose only when 600 V rating is mandatory and gate drive voltage ≥10 V is available; avoid for logic-level systems. |
Compared with IRL630SPbF, SIHL630STRL-GE3 offers RoHS/halogen-free compliance without performance trade-offs; versus STP20NM60FD, it delivers superior logic-level drive and D2PAK thermal density but trades off voltage headroom - making it optimal for 200 V-class, space-sensitive, low-voltage-control applications.
Availability
SIHL630STRL-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and solenoid control systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SIHL630STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial and automotive markets.
The SIHL630STRL-GE3 belongs to Vishay's logic-level power MOSFET product line engineered for high-current, surface-mount switching in space-constrained, thermally demanding applications such as motor control and industrial power conversion.
FAQ
What is the maximum continuous drain current for SIHL630STRL-GE3 at 100 °C case temperature?
The SIHL630STRL-GE3 supports 5.7 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation without exceeding 150 °C junction temperature under typical PCB-mount conditions.
Does SIHL630STRL-GE3 have avalanche capability, and is it rated for repetitive use?
Yes, SIHL630STRL-GE3 is explicitly rated for repetitive avalanche with EAR = 7.4 mJ and IAR = 9.0 A. The datasheet confirms this is a repetitive rating (pulse width limited by maximum junction temperature), making SIHL630STRL-GE3 suitable for inductive load switching without external protection.
What is the gate threshold voltage range for SIHL630STRL-GE3, and how does it support logic-level drive?
The SIHL630STRL-GE3 has a gate-source threshold voltage VGS(th) of 1.0–2.0 V at ID = 250 μA. This low threshold enables full enhancement with standard 3.3 V or 5 V logic outputs, eliminating the need for gate driver ICs in many low-to-mid power applications.
Can SIHL630STRL-GE3 be used in surface-mount designs without a heatsink?
Yes - when mounted on a 1" square FR-4 PCB with adequate copper pour, SIHL630STRL-GE3 delivers 3.1 W maximum power dissipation (TA = 25 °C). For higher power, the D2PAK's low RthJC = 1.7 °C/W enables efficient heat transfer to an external heatsink via the exposed drain tab.
What is the body diode reverse recovery charge (Qrr) of SIHL630STRL-GE3, and why does it matter?
The SIHL630STRL-GE3 body diode exhibits Qrr = 1.7–2.6 μC at TJ = 25 °C, IF = 9.0 A, and di/dt = 100 A/μs. This value directly impacts switching losses and EMI in freewheeling or synchronous rectification paths - lower Qrr reduces turn-on loss in the complementary switch and improves system efficiency.
SIHL630STRL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 5.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHL630STRL-GE3 FAQ
1.How can I place an order for SIHL630STRL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHL630STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHL630STRL-GE3 reliable?
The price and inventory of SIHL630STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHL630STRL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHL630STRL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHL630STRL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHL630STRL-GE3?
SIHL630STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHL630STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHL630STRL-GE3?
For technical support, including SIHL630STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHL630STRL-GE3 requirements.
6.How does Aetrix verify that SIHL630STRL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHL630STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHL630STRL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHL630STRL-GE3?
All SIHL630STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHL630STRL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHL630STRL-GE3 part is unused and in its original packaging.
Return procedure for SIHL630STRL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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