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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHLR120-GE3

Name: SIHLR120-GE3
Brand: Vishay Siliconix
SKU: SIHLR120-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHLR120-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHLR120-GE3.pdf

Description:: MOSFET N-CH 100V 7.7A DPAK

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Product details

Overview

SIHLR120-GE3 from Vishay Siliconix is a 100 V, 7.7 A N-channel logic-level power MOSFET in DPAK (TO-252) package, with R_DS(on) = 0.27 Ω at V_GS = 5 V, Q_g = 12 nC, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the SIHLR120-GE3 datasheet, SIHLR120-GE3 pinout, SIHLR120-GE3 application, or SIHLR120-GE3 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), surface-mount DPAK thermal performance (R_thJC = 3.0 °C/W), and unclamped inductive switching capability (E_AS = 210 mJ).

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon process and packaging to achieve low R_DS(on) while maintaining robust dynamic dV/dt immunity (5.5 V/ns) and fast switching (t_r = 64 ns, t_f = 27 ns). Its body diode exhibits t_rr = 110–140 ns and Q_rr = 0.80–1.0 μC under specified conditions.

The device operates across -55 °C to +150 °C junction temperature range, supports PCB-mount power dissipation up to 2.5 W, and features integrated gate protection with ±10 V V_GS rating and <±100 nA I_GSS leakage-enabling reliable operation in high-noise industrial environments without external gate clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× voltage margin for transients
R_DS(on) @ V_GS = 5 V	0.27 Ω - enables ≤1.5 W conduction loss at 7.7 A continuous drain current
Q_g	12 nC - determines gate drive power requirement and switching speed in PWM circuits
E_AS	210 mJ - allows safe energy absorption during unclamped inductive turn-off events
t_r/t_f	64 ns / 27 ns - enables high-frequency switching (>100 kHz) with controlled EMI
T_J Range	-55 °C to +150 °C - qualified for extended industrial and automotive under-hood ambient conditions
R_thJC	3.0 °C/W - permits direct heatsink mounting for high-power density thermal management

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin layout optimized for automated assembly and PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Logic-level compatible (1.0–2.0 V threshold); requires ≤12 nC charge for full enhancement
D (Drain)	High-side power path	Connected to exposed copper pad on bottom of package; primary thermal path to PCB heatsink
S (Source)	Power return / reference	Common node for gate drive return and current sensing; ties to ground or low-side switch source

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) = 0.38 Ω), enabling direct MCU GPIO control without level-shifting
Repetitive avalanche rated	Rated for I_AR = 7.7 A and E_AR = 4.2 mJ-supports robust operation in inductive load switching without snubbers
Dynamic dV/dt immunity	5.5 V/ns - prevents false turn-on in high dv/dt noise environments such as motor drives and SMPS
Surface-mount DPAK	TO-252 outline with thermal pad-enables >2.5 W PCB-mount power dissipation using standard FR-4 layouts
Low Q_gd/Q_g ratio	7.1/12 = 59% - improves hard-switching efficiency and reduces Miller-induced oscillation risk

Applications

DC-DC Converter High-Side Switch	Brushed DC Motor Driver
Use Scenario: Synchronous buck converter in 24–48 V industrial power supply delivering up to 10 A output. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; switched at 200–500 kHz. Use Value: Low R_DS(on) (0.27 Ω) minimizes conduction loss; fast t_r/t_f enables high-frequency operation with reduced filter size.	Use Scenario: H-bridge driver for 12–36 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side or high-side quadrant switch; handles bidirectional current up to 7.7 A continuous. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; logic-level gate simplifies microcontroller interface.
Hot-Swap Load Switch	LED String Power Switch
Use Scenario: Inrush-limited 12–24 V board-level power rail enable in telecom equipment. IC Role / Device Role / Timing Role: Single-pole power switch with controlled turn-on via gate resistor; handles steady-state loads up to 5 A. Use Value: Low V_GS(th) ensures predictable turn-on with standard 3.3 V/5 V logic; ruggedized construction withstands repeated hot-plug stress.	Use Scenario: Constant-current LED driver stage switching 24–48 V strings in architectural lighting systems. IC Role / Device Role / Timing Role: PWM dimming switch operating at 1–20 kHz; conducts up to 7.7 A peak forward current. Use Value: Fast switching (t_f = 27 ns) eliminates visible flicker; low Q_g reduces gate driver power consumption.

DC-DC Converter High-Side Switch

Brushed DC Motor Driver

Use Scenario: Synchronous buck converter in 24–48 V industrial power supply delivering up to 10 A output.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; switched at 200–500 kHz.

Use Value: Low R_DS(on) (0.27 Ω) minimizes conduction loss; fast t_r/t_f enables high-frequency operation with reduced filter size.

Use Scenario: H-bridge driver for 12–36 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side or high-side quadrant switch; handles bidirectional current up to 7.7 A continuous.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; logic-level gate simplifies microcontroller interface.

Hot-Swap Load Switch

LED String Power Switch

Use Scenario: Inrush-limited 12–24 V board-level power rail enable in telecom equipment.

IC Role / Device Role / Timing Role: Single-pole power switch with controlled turn-on via gate resistor; handles steady-state loads up to 5 A.

Use Value: Low V_GS(th) ensures predictable turn-on with standard 3.3 V/5 V logic; ruggedized construction withstands repeated hot-plug stress.

Use Scenario: Constant-current LED driver stage switching 24–48 V strings in architectural lighting systems.

IC Role / Device Role / Timing Role: PWM dimming switch operating at 1–20 kHz; conducts up to 7.7 A peak forward current.

Use Value: Fast switching (t_f = 27 ns) eliminates visible flicker; low Q_g reduces gate driver power consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR120PbF	Same silicon die and DPAK package; Pb-free finish not guaranteed; no "-GE3" halogen-free compliance marking	Identical electrical specs and thermal performance; differs only in RoHS/halogen compliance documentation and traceability	Select SIHLR120-GE3 for certified lead-free and halogen-free requirements per IEC 61249-2-21
STP10NK100Z	1000 V rating, higher R_DS(on) (0.75 Ω), larger TO-220 package, Zener-protected gate	Designed for high-voltage flyback and PFC stages-not suitable for low-V_DS high-current switching where SIHLR120-GE3 excels	Choose SIHLR120-GE3 when optimizing for 100 V, low-R_DS(on), and surface-mount footprint-not for >500 V applications

Compared with IRLR120PbF, SIHLR120-GE3 guarantees halogen-free compliance and full traceability; compared with STP10NK100Z, it delivers 2.8× lower R_DS(on) and 40% smaller footprint at 100 V, making it superior for compact, high-efficiency low-voltage power stages.

Availability

SIHLR120-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and hot-swap load switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHLR120-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHLR120-GE3 belongs to Vishay's third-generation TrenchFET® logic-level MOSFET family, engineered specifically for high-efficiency, surface-mount power switching in space-constrained industrial power systems.

FAQ

What is the maximum continuous drain current for SIHLR120-GE3 at 100 °C case temperature?

The SIHLR120-GE3 supports 4.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package mounted on standard PCB; actual current capability depends on heatsinking and ambient conditions. The SIHLR120-GE3 maintains R_DS(on) stability across this range due to its positive temperature coefficient.

Does SIHLR120-GE3 have avalanche capability, and how is it rated?

Yes, SIHLR120-GE3 is repetitively avalanche rated with I_AR = 7.7 A and E_AR = 4.2 mJ, and single-pulse avalanche energy E_AS = 210 mJ. These ratings are validated per JEDEC test conditions (V_DD = 25 V, L = 5.3 mH, R_g = 25 Ω) and allow safe operation during inductive load switching without external protection. The SIHLR120-GE3 data sheet confirms this in both Absolute Maximum Ratings and Avalanche Characteristics sections.

What is the gate threshold voltage range for SIHLR120-GE3, and why does it matter for logic-level drive?

The SIHLR120-GE3 has a V_GS(th) range of 1.0 V to 2.0 V at I_D = 250 μA, confirming true logic-level compatibility. This ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs-no gate driver IC required. The narrow threshold window also improves system predictability in parallel configurations. All SIHLR120-GE3 units meet this spec per production testing.

Can SIHLR120-GE3 be used in through-hole designs?

No-SIHLR120-GE3 is exclusively packaged in DPAK (TO-252), a surface-mount outline with gull-wing leads and thermal pad. Through-hole variants of the same silicon (e.g., SiHLU120-GE3) use IPAK (TO-251) packaging. Substituting SIHLR120-GE3 into a through-hole footprint will cause solder joint reliability issues and thermal performance degradation. Always match the SIHLR120-GE3 to its designated DPAK land pattern.

What is the thermal resistance from junction to case (R_thJC) for SIHLR120-GE3, and how does it impact heatsinking?

The SIHLR120-GE3 has R_thJC = 3.0 °C/W maximum, measured from junction to the exposed drain pad. This low value enables efficient heat transfer to an external heatsink or copper pour when the drain pad is soldered directly to a thermal plane. For example, with a 10 °C/W heatsink, total R_thJA drops to ~13 °C/W-supporting >30 W power dissipation. This R_thJC is confirmed in the Thermal Resistance Ratings table of the official datasheet.

SIHLR120-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 4.6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHLR120-GE3 FAQ

1.How can I place an order for SIHLR120-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHLR120-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHLR120-GE3 reliable?

The price and inventory of SIHLR120-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHLR120-GE3 is usually 5 days.

3.What payment methods are accepted for SIHLR120-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHLR120-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHLR120-GE3?

SIHLR120-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHLR120-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHLR120-GE3?

For technical support, including SIHLR120-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHLR120-GE3 requirements.

6.How does Aetrix verify that SIHLR120-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHLR120-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHLR120-GE3 meets industry standards.

7.What is the process for return or replacement of SIHLR120-GE3?

All SIHLR120-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHLR120-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHLR120-GE3 part is unused and in its original packaging.

Return procedure for SIHLR120-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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