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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHLU024-GE3

Name: SIHLU024-GE3
Brand: Vishay Siliconix
SKU: SIHLU024-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHLU024-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHLU024-GE3.pdf

Description:: LOGIC MOSFET N-CHANNEL 60V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHLU024-GE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in IPAK (TO-251) through-hole package, rated for 60 V V_DS, 14 A continuous drain current at T_C = 25 °C, and 0.10 Ω R_DS(on) at V_GS = 5 V. It delivers fast switching with 18 nC total gate charge and supports unclamped inductive switching up to 53 mJ, making it suitable for DC-DC converter high-side switches and motor drive half-bridges.

For engineers reviewing the SIHLU024-GE3 datasheet, SIHLU024-GE3 pinout, SIHLU024-GE3 application, or SIHLU024-GE3 equivalent, key selection criteria include its 60 V rating, logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), TO-251 thermal performance (R_thJA = 50 °C/W on PCB mount), avalanche ruggedness, and body diode recovery time of 130–260 ns.

Technical Context

This third-generation power MOSFET uses planar V-groove technology optimized for low R_DS(on) and fast switching. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with 4.0–5.0 V logic drivers, while the integrated body diode supports synchronous rectification and freewheeling in inductive loads.

The device features dynamic dV/dt immunity up to 4.5 V/ns and is characterized for linear derating (0.33 W/°C) above 25 °C case temperature. Avalanche energy rating (E_AS = 53 mJ) and peak diode recovery dV/dt capability confirm suitability for hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 24 V and 48 V bus applications
R_DS(on) @ V_GS = 5 V	0.10 Ω - Enables ≤1.2 W conduction loss at 14 A DC load current
Q_g	18 nC - Determines gate driver power requirement and switching speed in PWM circuits
I_D (continuous)	14 A @ T_C = 25 °C - Supports high-current switching in compact PCB-mounted designs
E_AS	53 mJ - Specifies single-pulse avalanche robustness during inductive turn-off transients
trr	130–260 ns - Defines body diode reverse recovery window affecting shoot-through risk in half-bridge operation
R_thJA (PCB mount)	50 °C/W - Enables 2.5 W power dissipation on standard 1" FR-4 board without heatsink

Pinout & Package

SIHLU024-GE3 uses the IPAK (TO-251AA) through-hole package with three terminals: Gate (G), Drain (D), and Source (S). The drain tab is electrically connected to the drain terminal and serves as the primary heat path; mounting requires mechanical anchoring and thermal via placement under the tab per Vishay Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts logic-level signals (4–5 V); threshold 1.0–2.0 V enables direct microcontroller drive
D	Drain connection	Main high-side switching node; electrically tied to exposed drain tab for thermal conduction
S	Source reference	Return path for load current; common reference for gate drive and current sensing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 4.0 V V_GS, eliminating need for gate boosters in 3.3 V/5 V control systems
Dynamic dV/dt rating	4.5 V/ns immunity prevents false turn-on during high-slew-rate voltage transients
Fast switching	11 ns turn-on delay + 110 ns rise time enables >500 kHz PWM operation with low switching loss
Avalanche-rated	53 mJ single-pulse E_AS allows safe operation in inductive load switching without external clamping
Low Q_gd/Q_g ratio	12/18 = 67 % - Reduces Miller effect, improving noise immunity and gate drive efficiency

Applications

DC-DC Converter High-Side Switch	Motor Drive Half-Bridge
Use Scenario: Step-down buck converter in industrial PLC power supplies operating from 24–48 V input. IC Role / Device Role / Timing Role: High-side synchronous switch controlling energy transfer into output inductor; operates at 200–500 kHz. Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; 18 nC Q_g enables efficient gate driving with low-power controllers.	Use Scenario: H-bridge driver for 12–24 V brushed DC motors in automated gate actuators. IC Role / Device Role / Timing Role: Upper-leg N-channel switch paired with complementary low-side FET; commutated at ≤20 kHz. Use Value: Body diode trr of 130–260 ns limits cross-conduction risk; avalanche rating handles back-EMF spikes.
LED Driver Current Switch	Power Supply OR-ing Diode
Use Scenario: Constant-current LED string driver in commercial signage with 36 V bus. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator; dissipates up to 2.5 W on PCB. Use Value: R_thJA = 50 °C/W allows full 14 A rating with minimal copper area; logic-level gate simplifies dimming interface.	Use Scenario: Redundant 12 V power input selector in network switch power distribution. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode in ideal diode configuration. Use Value: 1.5 V V_SD body diode forward drop reduces conduction loss by >40 % vs. 0.4 V Schottky at 10 A.

DC-DC Converter High-Side Switch

Motor Drive Half-Bridge

Use Scenario: Step-down buck converter in industrial PLC power supplies operating from 24–48 V input.

IC Role / Device Role / Timing Role: High-side synchronous switch controlling energy transfer into output inductor; operates at 200–500 kHz.

Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; 18 nC Q_g enables efficient gate driving with low-power controllers.

Use Scenario: H-bridge driver for 12–24 V brushed DC motors in automated gate actuators.

IC Role / Device Role / Timing Role: Upper-leg N-channel switch paired with complementary low-side FET; commutated at ≤20 kHz.

Use Value: Body diode trr of 130–260 ns limits cross-conduction risk; avalanche rating handles back-EMF spikes.

LED Driver Current Switch

Power Supply OR-ing Diode

Use Scenario: Constant-current LED string driver in commercial signage with 36 V bus.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator; dissipates up to 2.5 W on PCB.

Use Value: R_thJA = 50 °C/W allows full 14 A rating with minimal copper area; logic-level gate simplifies dimming interface.

Use Scenario: Redundant 12 V power input selector in network switch power distribution.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode in ideal diode configuration.

Use Value: 1.5 V V_SD body diode forward drop reduces conduction loss by >40 % vs. 0.4 V Schottky at 10 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLU024PbF	Same die, identical specs, Pb-free but not halogen-free; no "-GE3" suffix	No difference in circuit function or layout; same TO-251 footprint and thermal behavior	Select IRLU024PbF only if halogen-free compliance is not required per IPC-1752A
SiHLR024TR-GE3	Same silicon, DPAK (TO-252) surface-mount package; R_thJA = 110 °C/W (vs. 50 °C/W for SIHLU024-GE3)	Requires rework for SMT assembly; lower thermal performance on PCB mount; unsuitable for high-power through-hole designs	Choose SiHLR024TR-GE3 only for space-constrained SMT layouts where thermal budget permits higher junction temperature

Compared with SIHLU024-GE3, IRLU024PbF offers identical electrical and thermal performance but lacks halogen-free certification, while SiHLR024TR-GE3 trades through-hole mechanical robustness and superior PCB thermal resistance for surface-mount compatibility-neither is pin-compatible due to differing packages (TO-251 vs. TO-252).

Availability

SIHLU024-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, LED lighting controls, and redundant power OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for SIHLU024-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHLU024-GE3 belongs to Vishay's third-generation logic-level power MOSFET family, engineered for high-efficiency switching in industrial and automotive auxiliary power systems where low gate drive voltage and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for SIHLU024-GE3 at 100 °C case temperature?

The SIHLU024-GE3 supports 9.2 A continuous drain current at T_C = 100 °C, derived from its 14 A rating at 25 °C and linear derating factor of 0.33 W/°C. This value reflects thermal limitations of the TO-251 package mounted on a standard PCB, not silicon capability alone. Engineers must verify actual board-level thermal resistance to ensure junction temperature remains below 150 °C under worst-case ambient and power dissipation conditions. The SIHLU024-GE3 datasheet specifies this limit in Absolute Maximum Ratings Table.

Does SIHLU024-GE3 require a gate resistor for reliable switching in a 200 kHz PWM application?

Yes, SIHLU024-GE3 requires an external gate resistor to control dv/dt and prevent oscillation, especially at 200 kHz. With 18 nC total gate charge and typical gate driver output impedance, a 10–25 Ω resistor balances switching speed against ringing and EMI. The SIHLU024-GE3 datasheet Figure 10 shows test conditions using R_g = 9.0 Ω, confirming its necessity for repeatable timing. Omitting the resistor risks overshoot, shoot-through in bridge configurations, and accelerated gate oxide stress.

Can SIHLU024-GE3 be used as a direct replacement for IRLU024PbF in an existing design?

Yes, SIHLU024-GE3 is a direct replacement for IRLU024PbF in terms of pinout, package (TO-251), and all electrical specifications-including V_DS, R_DS(on), Q_g, and thermal ratings. The "-GE3" suffix denotes lead-free and halogen-free compliance per JEDEC J-STD-609, whereas IRLU024PbF is lead-free only. No PCB or schematic changes are needed; the SIHLU024-GE3 maintains full functional and mechanical equivalence with enhanced environmental compliance.

What is the body diode forward voltage of SIHLU024-GE3 at 14 A and 25 °C?

The body diode forward voltage (V_SD) of SIHLU024-GE3 is 1.5 V maximum at T_J = 25 °C and I_S = 14 A with V_GS = 0 V, as specified in the Drain-Source Body Diode Characteristics table. This value is critical for freewheeling loss calculation in half-bridge or synchronous rectifier applications. At elevated temperatures or lower currents, V_SD decreases slightly; the SIHLU024-GE3 datasheet Figure 7 provides the full V_SD vs. I_S curve across temperature.

Is SIHLU024-GE3 suitable for avalanche energy handling in a solenoid driver?

Yes, SIHLU024-GE3 is rated for 53 mJ single-pulse avalanche energy (E_AS) under defined test conditions (V_DD = 25 V, I_AS = 14 A), making it suitable for solenoid drivers where inductive kickback exceeds V_DS. Its dynamic dV/dt rating of 4.5 V/ns further enhances ruggedness against rapid voltage transients. However, repetitive avalanche must be avoided; the SIHLU024-GE3 datasheet Figure 12c shows E_AS degrades with increasing I_AS, so design margining is essential for long-term reliability.

SIHLU024-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 8.4A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHLU024-GE3 FAQ

1.How can I place an order for SIHLU024-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHLU024-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHLU024-GE3 reliable?

The price and inventory of SIHLU024-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHLU024-GE3 is usually 5 days.

3.What payment methods are accepted for SIHLU024-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHLU024-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHLU024-GE3?

SIHLU024-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHLU024-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHLU024-GE3?

For technical support, including SIHLU024-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHLU024-GE3 requirements.

6.How does Aetrix verify that SIHLU024-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHLU024-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHLU024-GE3 meets industry standards.

7.What is the process for return or replacement of SIHLU024-GE3?

All SIHLU024-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHLU024-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHLU024-GE3 part is unused and in its original packaging.

Return procedure for SIHLU024-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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