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Vishay Siliconix SIHLZ34S-GE3
- Part No.:
- SIHLZ34S-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHLZ34S-GE3.pdf
- Description:
- MOSFET N-CH 60V 30A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,353
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Product details
Overview
SIHLZ34S-GE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 60 V VDS, 30 A continuous drain current at TC = 25 °C, and 0.05 Ω RDS(on) at VGS = 5 V. It features fully avalanche-rated operation, 175 °C maximum junction temperature, and fast switching with 35 nC total gate charge - optimized for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the SIHLZ34S-GE3 datasheet, SIHLZ34S-GE3 pinout, SIHLZ34S-GE3 application, or SIHLZ34S-GE3 equivalent, this device is selected for high-current surface-mount power switching where low gate drive voltage (5 V), rugged unclamped inductive switching, and PCB-mount thermal performance (3.7 W at TA = 25 °C) are critical design requirements.
Technical Context
This MOSFET employs Vishay's third-generation silicon process to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) and 128 mJ single-pulse avalanche energy. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with standard logic-level drivers.
The device integrates a fast-recovery body diode (trr = 120–180 ns, Qrr = 700–1300 nC) and exhibits low output capacitance (Coss = 660 pF) and reverse transfer capacitance (Crss = 170 pF), supporting high-frequency hard-switching topologies up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V bus systems with 20 % margin against transients |
| RDS(on) @ VGS = 5 V | 0.05 Ω - enables ≤ 9 W conduction loss at 18 A DC, critical for thermally constrained PCB layouts |
| ID Continuous @ TC = 25 °C | 30 A - delivers high power density in D2PAK without external heatsink under forced-air cooling |
| Qg Total | 35 nC - determines gate driver power requirement and switching loss trade-off in PWM operation |
| EAS | 128 mJ - guarantees ruggedness in unclamped inductive switching (e.g., relay/snubberless solenoid drive) |
| trr / Qrr | 120–180 ns / 700–1300 nC - defines body diode recovery behavior in synchronous rectification and freewheeling paths |
| RthJC | 1.7 °C/W - enables direct thermal coupling to copper pour or heatsink for >80 W power dissipation capability |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S); JEDEC-compliant outline; RoHS-compliant, lead (Pb)-free, halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 5 V logic-level signal; requires <7.1 nC charge to fully enhance; low Ciss (1600 pF) eases driver selection |
| D (Drain) | High-side power terminal | Connected to exposed backside metal tab; must be soldered to large copper area for thermal management and low-inductance return path |
| S (Source) | Power return / reference node | Serves as local ground reference for gate drive; internal source inductance (LS = 7.5 nH) impacts high-di/dt switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed turn-on at VGS = 4.5 V (RDS(on) ≤ 0.07 Ω), eliminating need for gate boosters in 5 V microcontroller interfaces |
| Full avalanche rating | 128 mJ single-pulse EAS validated per JEDEC JESD24-11, enabling reliable operation in inductive load switching without snubbers |
| High-temperature operation | Rated for continuous operation up to TJ = 175 °C, supporting automotive under-hood and industrial motor control environments |
| Low gate charge profile | Qgd/Qg ratio of ~71 % (25/35 nC) indicates strong Miller immunity, reducing risk of spurious turn-on during high dv/dt commutation |
| Optimized body diode | 1.6 V VSD at 30 A and fast trr enable efficient freewheeling in buck converters and H-bridge motor drives without external Schottky |
Applications
| Brushless DC Motor Drive | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Half-bridge leg in 24–48 V BLDC inverters for HVAC blowers and power tools. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 15–30 A phase current with 20–100 kHz PWM. Use Value: Low RDS(on) minimizes I²R losses during conduction; fast tr/tf (170/56 ns) reduces switching loss; avalanche rating absorbs inductive kickback during commutation. |
Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V input, 12 V output telecom PSUs. IC Role / Device Role / Timing Role: Power switch in active clamp forward or LLC resonant converter operating at 200–500 kHz. Use Value: Low Coss and Crss reduce capacitive switching loss; 175 °C rating allows compact layout near magnetics; Qg enables efficient gate driving with integrated controllers. |
| Automotive Body Control Module | LED Driver for High-Bay Lighting |
|
Use Scenario: Load switch for solenoids, fans, and relays in 12 V/24 V BCMs requiring ASIL-B functional safety awareness. IC Role / Device Role / Timing Role: Protected high-side switch with diagnostic feedback via current sense or VDS monitoring. Use Value: Fully avalanche-rated operation withstands battery dump transients; 175 °C rating supports under-dash mounting; low VGS(th) ensures compatibility with 3.3 V/5 V MCU GPIO. |
Use Scenario: Constant-current switch in multi-string LED drivers for warehouse lighting (50–200 W). IC Role / Device Role / Timing Role: PWM dimming FET controlling average LED current at 1–10 kHz. Use Value: Low RDS(on) prevents thermal derating at full load; fast turn-off (tf = 56 ns) eliminates LED current tailing; robust SOA handles surge currents during cold-start. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLZ34SPbF | Same silicon die and specs, but Pb-containing terminations; not RoHS-compliant; identical RDS(on), Qg, and avalanche rating | Restricted to legacy industrial or non-RoHS programs; incompatible with EU/China RoHS mandates | Select only if Pb-based assembly is required and compliance is waived |
| STP30NF20 | 200 V VDS, higher RDS(on) (0.055 Ω @ 10 V), 45 nC Qg; requires 10 V gate drive for full enhancement | Better for 100–150 V bus systems; unsuitable for 5 V logic drive; higher switching loss at same frequency | Choose only when higher voltage rating is mandatory and gate drive ≥10 V is available |
Compared with SIHLZ34S-GE3, IRLZ34SPbF offers identical performance with non-RoHS compliance, while STP30NF20 trades lower voltage rating and logic-level drive for higher breakdown voltage - making SIHLZ34S-GE3 optimal for 48 V systems needing minimal gate drive overhead and certified environmental compliance.
Availability
SIHLZ34S-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body electronics requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free assurance.
Supply support for SIHLZ34S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIHLZ34S-GE3 belongs to Vishay's logic-level D2PAK MOSFET family, engineered for high-current, surface-mount power switching in space-constrained applications where low gate drive voltage and thermal robustness are essential.
FAQ
What is the maximum continuous drain current for SIHLZ34S-GE3 at 100 °C case temperature?
The SIHLZ34S-GE3 supports 21 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limits and ensures safe operation within the 175 °C maximum junction temperature. Designers must verify PCB copper area and airflow to maintain TC ≤ 100 °C under full load. The SIHLZ34S-GE3 datasheet provides Fig. 9 for precise current vs. case temperature interpolation.
Does SIHLZ34S-GE3 require a gate resistor for stability in high-speed switching?
Yes - the SIHLZ34S-GE3 benefits from an external gate resistor (typically 2–10 Ω) to dampen ringing caused by LS (7.5 nH) and parasitic PCB inductance, especially at di/dt > 100 A/μs. Test data (Fig. 10) uses Rg = 6 Ω for switching time measurement. Omitting the resistor may cause overshoot, shoot-through, or false triggering in bridge configurations. The SIHLZ34S-GE3 gate drive loop must be laid out with minimal trace length and ground plane coupling.
Can SIHLZ34S-GE3 replace IRLZ34S in existing designs?
Yes - SIHLZ34S-GE3 is the RoHS-compliant, halogen-free version of IRLZ34S, sharing identical electrical specifications, pinout, package dimensions, and thermal performance. No PCB or schematic changes are needed. The "GE3" suffix denotes green packaging per Vishay's material categorization standard (doc. 99912). All test conditions and curves in the SIHLZ34S-GE3 datasheet apply directly to IRLZ34S, confirming drop-in compatibility for SIHLZ34S-GE3.
What is the body diode forward voltage of SIHLZ34S-GE3 at 30 A and 25 °C?
The body diode forward voltage (VSD) of SIHLZ34S-GE3 is 1.6 V at TJ = 25 °C and IS = 30 A with VGS = 0 V, per the Drain-Source Body Diode Characteristics table. This value increases with junction temperature (see Fig. 7), reaching ~1.3 V at 175 °C. The SIHLZ34S-GE3 body diode is optimized for low-loss freewheeling in buck and half-bridge topologies.
Is SIHLZ34S-GE3 suitable for use in automotive under-hood applications?
Yes - SIHLZ34S-GE3 is qualified for operation from –55 °C to +175 °C junction temperature and features fully avalanche-rated construction (EAS = 128 mJ), making it suitable for automotive under-hood applications such as radiator fan control, fuel pump drivers, and HVAC actuators. Its D2PAK package enables robust thermal attachment to chassis or heatsinks. However, system-level AEC-Q101 qualification must be confirmed separately, as SIHLZ34S-GE3 is not pre-qualified to that standard.
SIHLZ34S-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 18A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHLZ34S-GE3 FAQ
1.How can I place an order for SIHLZ34S-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHLZ34S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHLZ34S-GE3 reliable?
The price and inventory of SIHLZ34S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHLZ34S-GE3 is usually 5 days.
3.What payment methods are accepted for SIHLZ34S-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHLZ34S-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHLZ34S-GE3?
SIHLZ34S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHLZ34S-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHLZ34S-GE3?
For technical support, including SIHLZ34S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHLZ34S-GE3 requirements.
6.How does Aetrix verify that SIHLZ34S-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHLZ34S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHLZ34S-GE3 meets industry standards.
7.What is the process for return or replacement of SIHLZ34S-GE3?
All SIHLZ34S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHLZ34S-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHLZ34S-GE3 part is unused and in its original packaging.
Return procedure for SIHLZ34S-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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