Vishay Siliconix SIHP050N60E-GE3

Overview

SIHP050N60E-GE3 from Vishay Siliconix is a 600 V, 51 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.043 Ω R_DS(on) at V_GS = 10 V and 130 nC total gate charge, optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP050N60E-GE3 datasheet, SIHP050N60E-GE3 pinout, SIHP050N60E-GE3 application, or SIHP050N60E-GE3 equivalent, key selection criteria include avalanche energy rating (427 mJ), low effective output capacitance (C_oss(er) = 114 pF), and thermal resistance (R_thJC = 0.45 °C/W) for high-power density designs.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology to minimize conduction and switching losses via low R_DS(on) × Q_g figure-of-merit (43 Ω·nC) and reduced C_oss(er). Its rated 600 V V_DS and 155 A pulsed drain current support robust operation in hard-switched topologies.

The device integrates an avalanche-rated body diode with 435 ns typical reverse recovery time and 9.2 μC Q_rr, enabling reliable performance in inductive switching circuits such as motor drives and PV inverters without external snubbers.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage distance, and Pb-free/halogen-free construction per JEDEC MS-001.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW56N60M2 and IXFH50N60P, the SIHP050N60E-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and compact TO-220AB packaging-making it ideal for space-constrained 1–3 kW power supplies where thermal interface simplicity matters more than absolute peak current.

Availability

SIHP050N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHP050N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The E Series Power MOSFET product line targets high-frequency, high-efficiency power conversion in datacenter, telecom, and renewable energy systems, prioritizing low FOM and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for SIHP050N60E-GE3 at 100 °C case temperature?

The SIHP050N60E-GE3 has a maximum continuous drain current (I_D) of 32 A at T_C = 100 °C, derated linearly above that temperature at 2.2 W/°C. This rating reflects real-world thermal constraints in forced-air-cooled enclosures and must be validated against actual PCB copper area and heatsink interface resistance before final design sign-off. The SIHP050N60E-GE3 datasheet specifies this value under standard JEDEC test conditions.

Does SIHP050N60E-GE3 support logic-level gate drive?

No, the SIHP050N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–5.0 V, and it requires 10 V gate-source voltage to achieve its specified 0.043 Ω R_DS(on). Driving it with 5 V logic signals results in significantly higher on-resistance and unacceptable conduction losses. The SIHP050N60E-GE3 must be paired with a dedicated gate driver capable of sourcing/sinking ≥2 A peak current.

What is the significance of C_oss(er) = 114 pF for SIHP050N60E-GE3 in power converter design?

C_oss(er) = 114 pF represents the fixed capacitance yielding the same energy storage as the nonlinear C_oss curve between 0–480 V. For the SIHP050N60E-GE3, this value directly determines turn-off switching loss (E_off ≈ 0.5 × C_oss(er) × V_DS² × f_sw). At 480 V and 100 kHz, it contributes ~1.3 mJ per cycle-critical for optimizing ZVS timing and minimizing dead-time losses in resonant topologies using the SIHP050N60E-GE3.

Can SIHP050N60E-GE3 replace older SiHP50N60E parts in existing designs?

Yes, SIHP050N60E-GE3 is the lead-free/halogen-free qualified successor to the initial SiHP50N60E sample marking noted in the datasheet. Electrical specifications, pinout, package dimensions, and thermal characteristics are identical. No PCB or firmware changes are needed when upgrading to SIHP050N60E-GE3, and it maintains full compatibility with legacy designs using the earlier part number.

What is the recommended gate resistor value for SIHP050N60E-GE3 in a 100 kHz PFC boost converter?

Based on the SIHP050N60E-GE3's 130 nC Q_g and typical 2 A peak gate driver output, a 9.1 Ω gate resistor achieves ~35 ns turn-on delay and ~67 ns turn-off delay-matching the values measured in the official Vishay test circuit at V_DS = 480 V. This value balances switching speed against EMI and gate ringing; lower values increase dv/dt stress, while higher values raise switching losses. The SIHP050N60E-GE3 gate drive network must also include a 0.1 μF local decoupling capacitor.