Vishay Siliconix SIHP052N60EF-GE3

Overview

SIHP052N60EF-GE3 from Vishay Siliconix is a 600 V, 48 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.045 Ω R_DS(on) at V_GS = 10 V, 101 nC total gate charge, and fast body diode with 148 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP052N60EF-GE3 datasheet, SIHP052N60EF-GE3 pinout, SIHP052N60EF-GE3 application, or SIHP052N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (353 mJ), low Co(er) (116 pF), 100 V/ns dv/dt capability, and compatibility with hard-switched 480 V DC bus topologies.

Technical Context

This EF Series MOSFET employs Vishay's 4th-generation E-series silicon technology optimized for high-voltage power conversion. Its low figure-of-merit (R_DS(on) × Q_g = 4.55 Ω·nC) enables reduced gate drive loss and improved efficiency in continuous conduction mode (CCM) PFC and LLC resonant converters.

The device integrates an optimized body diode with controlled reverse recovery (Q_rr = 1.1–1.2 μC, t_rr = 148–296 ns) and supports unclamped inductive switching (UIS) up to 353 mJ at T_J = 25 °C. Thermal resistance R_thJC is 0.45 °C/W, enabling high-power operation with standard heatsinking.

Key Specifications

Pinout & Package

SIHP052N60EF-GE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected). The package provides mechanical robustness, standardized mounting, and direct thermal path from die to heatsink via the metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N60M2 and IXFH50N60P, SIHP052N60EF-GE3 provides superior figure-of-merit, certified UIS ruggedness, and faster body diode recovery - making it optimal for space-constrained, high-reliability 600 V power conversion where thermal and EMI margins are tight.

Availability

SIHP052N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP052N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The EF Series, including SIHP052N60EF-GE3, was engineered for high-voltage, high-frequency power conversion in telecom, server, and renewable energy systems - prioritizing low FOM, fast body diode, and avalanche ruggedness.

FAQ

What is the maximum continuous drain current for SIHP052N60EF-GE3 at 100 °C case temperature?

The SIHP052N60EF-GE3 supports 31 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature. At T_C = 25 °C, the limit rises to 48 A, but real-world thermal design must target the 100 °C derated value for sustained operation.

Does SIHP052N60EF-GE3 have avalanche capability, and how is it rated?

Yes, SIHP052N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 353 mJ at T_J = 25 °C (pulse test condition: V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 5 A). This rating confirms robustness against inductive energy transients without external clamping, critical for motor drive and welding inverter applications.

What is the body diode reverse recovery time of SIHP052N60EF-GE3, and why does it matter?

The SIHP052N60EF-GE3 body diode exhibits t_rr = 148 ns (typical) at T_J = 25 °C, I_F = 23 A, di/dt = 100 A/μs, and V_R = 400 V. This fast, soft recovery minimizes voltage overshoot and ringing during commutation, directly improving EMI performance and reliability in totem-pole PFC and half-bridge topologies where the body diode conducts freewheeling current.

Can SIHP052N60EF-GE3 be used in place of older 600 V MOSFETs like the SIHP12N60E?

SIHP052N60EF-GE3 is not a direct drop-in replacement for SIHP12N60E due to higher current rating (48 A vs. 12 A), lower R_DS(on) (0.045 Ω vs. 0.55 Ω), and different gate charge profile. While both are TO-220AB packaged, PCB layout must verify gate drive strength and thermal pad area adequacy. SIHP052N60EF-GE3 enables significant efficiency gains but requires revalidation of gate drive timing and thermal management.

What is the thermal resistance from junction to case (R_thJC) for SIHP052N60EF-GE3, and how does it impact heatsink selection?

The SIHP052N60EF-GE3 has R_thJC = 0.45 °C/W (max), measured from junction to the drain-connected metal tab. With a maximum T_J of 150 °C and T_C = 100 °C, this allows 278 W power dissipation. For a 31 A continuous load at R_DS(on) = 0.052 Ω, conduction loss is ~50 W - requiring a heatsink with ≤1.9 °C/W total thermal resistance (including interface material) to maintain safe junction temperature.