Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP065N60E-BE3

Name: SIHP065N60E-BE3
Brand: Vishay Siliconix
SKU: SIHP065N60E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP065N60E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP065N60E-BE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,486

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP065N60E-BE3 from Vishay Siliconix is a 600 V, 40 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.057 Ω R_DS(on) at V_GS = 10 V, 74 nC total gate charge, and 226 mJ single-pulse avalanche energy-designed for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP065N60E-BE3 datasheet, SIHP065N60E-BE3 pinout, SIHP065N60E-BE3 application, or SIHP065N60E-BE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) (93 pF), and rated dV/dt capability (100 V/ns at T_J = 125 °C) for robust hard-switching operation.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for high-voltage power conversion. Its low effective output capacitance (C_oss(er) = 93 pF) and fast switching parameters (t_d(on) typ. 28 ns, t_f typ. 13 ns) reduce turn-on/turn-off losses in continuous conduction mode (CCM) PFC and LLC resonant topologies.

The device integrates an avalanche-rated body diode with t_rr = 382 ns (typ.) and Q_rr = 7.1 μC at 25 °C, supporting ZVS-capable designs. Thermal resistance R_thJC = 0.5 °C/W enables high-power dissipation in compact heatsinked layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage
R_DS(on) typ.	0.057 Ω @ 10 V - enables <1.5 W conduction loss at 16 A continuous drain current
Q_g max	74 nC - determines gate driver peak current requirement (~1.5 A for 50 ns rise time)
E_AS	226 mJ - ensures reliable unclamped inductive switching in PFC boost chokes
C_oss(er)	93 pF - reduces capacitive turn-on loss and improves efficiency in high-frequency SMPS
R_thJC	0.5 °C/W - allows 250 W power dissipation with ≤125 °C junction rise above case
V_SD	1.2 V @ I_S = 16 A - defines forward drop and recovery loss in synchronous rectification or freewheeling

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting. Pin assignment verified per Vishay S22-0949-Rev. E mechanical drawing and schematic symbol.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 2700 pF affects driver sizing
D (Drain)	High-side power node	Connected to TO-220 tab; electrically isolated but thermally coupled to heatsink
S (Source)	Reference node / return path	Common connection point for gate driver ground and current sense resistor

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	4.2 nC·Ω - minimizes combined conduction and switching loss in 100–300 kHz PFC stages
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external snubbers in boost inductor failure scenarios
Reduced C_oss(er)	93 pF - cuts stored energy (E_oss) by >30 % vs. prior-gen 600 V MOSFETs at 480 V
Body diode t_rr & Q_rr	382 ns / 7.1 μC - enables soft-recovery in bridge-leg configurations without external Schottky
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard 99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: 3 kW front-end AC-DC converter with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and 16 A RMS current. Use Value: Low R_DS(on) and C_oss(er) reduce thermal load and improve full-load efficiency beyond 96 %.	Use Scenario: -48 V distributed power system rectifier with hot-swap and OR-ing control. IC Role / Device Role / Timing Role: High-side switch in redundant power path with fast turn-off for fault isolation. Use Value: 100 V/ns dV/dt rating prevents spurious turn-on during bus transients; 116 A pulsed ID supports surge currents.
PFC Boost Stage	Solar PV Inverter
Use Scenario: Continuous conduction mode (CCM) boost converter in 5–10 kW solar string inverters. IC Role / Device Role / Timing Role: Main switching element in interleaved dual-phase PFC stage operating at 70–100 kHz. Use Value: 74 nC Q_g enables efficient gate driving with low-cost 1 A drivers; 226 mJ E_AS withstands inductor saturation events.	Use Scenario: DC link switching in two-level or three-level NPC inverter stage for residential PV systems. IC Role / Device Role / Timing Role: High-voltage leg switch managing 600–1000 V DC link voltage and bidirectional current flow. Use Value: Body diode Q_rr = 7.1 μC limits reverse recovery loss during commutation; TO-220AB facilitates direct heatsink mounting.

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end AC-DC converter with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and 16 A RMS current.

Use Value: Low R_DS(on) and C_oss(er) reduce thermal load and improve full-load efficiency beyond 96 %.

Use Scenario: -48 V distributed power system rectifier with hot-swap and OR-ing control.

IC Role / Device Role / Timing Role: High-side switch in redundant power path with fast turn-off for fault isolation.

Use Value: 100 V/ns dV/dt rating prevents spurious turn-on during bus transients; 116 A pulsed ID supports surge currents.

PFC Boost Stage

Solar PV Inverter

Use Scenario: Continuous conduction mode (CCM) boost converter in 5–10 kW solar string inverters.

IC Role / Device Role / Timing Role: Main switching element in interleaved dual-phase PFC stage operating at 70–100 kHz.

Use Value: 74 nC Q_g enables efficient gate driving with low-cost 1 A drivers; 226 mJ E_AS withstands inductor saturation events.

Use Scenario: DC link switching in two-level or three-level NPC inverter stage for residential PV systems.

IC Role / Device Role / Timing Role: High-voltage leg switch managing 600–1000 V DC link voltage and bidirectional current flow.

Use Value: Body diode Q_rr = 7.1 μC limits reverse recovery loss during commutation; TO-220AB facilitates direct heatsink mounting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 85 nC, C_oss(er) = 110 pF, TO-247 package	Higher gate charge increases driver loss; larger TO-247 footprint requires PCB redesign	Preferred where higher avalanche ruggedness (E_AS = 300 mJ) justifies layout change
IXFH60N60X	R_DS(on) = 0.065 Ω, Q_g = 65 nC, C_oss(er) = 72 pF, TO-247 package	Lower C_oss(er) improves light-load efficiency; higher R_DS(on) raises conduction loss at >12 A	Selected when minimizing capacitive loss dominates over conduction loss in variable-frequency operation

Compared with STW62N60M2 and IXFH60N60X, SIHP065N60E-BE3 offers optimal balance of low R_DS(on), moderate Q_g, and industry-standard TO-220AB footprint-enabling drop-in replacement in existing 600 V power supply designs without thermal or layout compromise.

Availability

SIHP065N60E-BE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and solar PV inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHP065N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The E Series Power MOSFET product line targets high-efficiency, high-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems-delivering low FOM and enhanced avalanche capability for mission-critical power stages.

FAQ

What is the maximum continuous drain current rating for SIHP065N60E-BE3 at 100 °C case temperature?

The SIHP065N60E-BE3 has a continuous drain current rating of 25 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual heatsink performance and ambient conditions in the final design. The SIHP065N60E-BE3 maintains safe operation up to T_J = 150 °C under these conditions.

Does SIHP065N60E-BE3 support logic-level gate drive?

No, SIHP065N60E-BE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3 V to 5 V, but it is characterized and specified for R_DS(on) at V_GS = 10 V. Driving the SIHP065N60E-BE3 with only 5 V may result in incomplete turn-on and excessive conduction loss. A 10 V–15 V gate drive is required for full performance.

What is the significance of the "-BE3" suffix in SIHP065N60E-BE3?

The "-BE3" suffix indicates an alternate manufacturing location for the SIHP065N60E-BE3, consistent with Vishay's multi-site production strategy. Per Vishay documentation, all BE3 units meet identical electrical, thermal, and reliability specifications as the base SIHP065N60E, including R_DS(on), Q_g, and E_AS. The SIHP065N60E-BE3 is lead (Pb)-free and halogen-free per Vishay Green Standard 99912.

How does the body diode performance of SIHP065N60E-BE3 compare to discrete fast recovery diodes?

The SIHP065N60E-BE3 body diode has t_rr = 382 ns (typ.) and Q_rr = 7.1 μC at 25 °C, which is slower and higher-charge than dedicated ultrafast diodes but sufficient for non-critical freewheeling in hard-switched topologies. Unlike discrete diodes, the SIHP065N60E-BE3 body diode shares thermal coupling with the MOSFET die, enabling coordinated thermal management. It is not recommended for high-frequency synchronous rectification without external optimization.

Can SIHP065N60E-BE3 be used in parallel configurations?

Yes, the SIHP065N60E-BE3 supports paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing across devices. However, careful attention to gate loop inductance, source inductance matching, and individual gate resistor selection (e.g., 5–10 Ω) is required to prevent oscillation and ensure balanced dynamic current distribution. Layout symmetry is critical-each SIHP065N60E-BE3 must have identical trace lengths and thermal paths.

SIHP065N60E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP065N60E-BE3 FAQ

1.How can I place an order for SIHP065N60E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP065N60E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP065N60E-BE3 reliable?

The price and inventory of SIHP065N60E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP065N60E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP065N60E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP065N60E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP065N60E-BE3?

SIHP065N60E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP065N60E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP065N60E-BE3?

For technical support, including SIHP065N60E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP065N60E-BE3 requirements.

6.How does Aetrix verify that SIHP065N60E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP065N60E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP065N60E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP065N60E-BE3?

All SIHP065N60E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP065N60E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP065N60E-BE3 part is unused and in its original packaging.

Return procedure for SIHP065N60E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …