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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP065N60E-GE3

Name: SIHP065N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP065N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP065N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP065N60E-GE3.pdf

Description:: MOSFET N-CH 600V 40A TO220AB

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Product details

Overview

SIHP065N60E-GE3 from Vishay Siliconix is a 600 V, 40 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.057 Ω R_DS(on) at V_GS = 10 V, 74 nC total gate charge, and 226 mJ single-pulse avalanche energy - designed for high-efficiency switching in telecom and server power supplies.

For engineers reviewing the SIHP065N60E-GE3 datasheet, SIHP065N60E-GE3 pinout, SIHP065N60E-GE3 application, or SIHP065N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), Co(er) = 93 pF for reduced switching loss, and UIS-rated ruggedness in hard-switched PFC and SMPS topologies.

Technical Context

This 4th-generation E-series MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its low effective output capacitance (Co(er) = 93 pF) and fast switching parameters (t_d(off) = 54–108 ns, t_f = 13–26 ns) reduce turn-off losses while maintaining robust dv/dt immunity (100 V/ns at T_J = 125 °C).

The device integrates an intrinsic body diode with 382–764 ns reverse recovery time (t_rr) and 7.1–14.2 μC Q_rr, enabling reliable operation in continuous conduction mode (CCM) PFC stages. Thermal resistance R_thJC = 0.5 °C/W supports high-power dissipation up to 250 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes in industrial and telecom SMPS
R_DS(on) typ	0.057 Ω @ 10 V - enables <1.5 W conduction loss at 16 A, critical for thermal management in compact 1–3 kW PFC modules
Q_g max	74 nC - determines gate driver power requirement; compatible with standard 1–2 A peak drivers in high-frequency (>100 kHz) operation
E_AS	226 mJ - ensures single-pulse unclamped inductive switching survivability without external snubbers in motor drive and welding inverters
C_oss(er)	93 pF - reduces capacitive turn-on loss and improves light-load efficiency in resonant LLC and phase-shifted full-bridge converters
I_D cont @ T_C=100°C	25 A - defines real-world current capability under forced-air cooling, aligning with derating curves for 1U server PSU thermal envelopes

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, JEDEC outline MO-002AC. Tab electrically connected to drain for direct heatsink coupling and low-inductance thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 2700 pF requires careful gate resistor selection (R_g = 9.1 Ω typical) to balance EMI and switching speed
D (Drain)	High-side power switch node	Connected to TO-220 tab; must be insulated from heatsink unless system ground-referenced; handles full 600 V blocking and 116 A pulsed current
S (Source)	Power return / reference node	Serves as local ground for gate drive loop; low-inductance source routing essential to suppress ringing during dI/dt > 400 A/μs commutation

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.2 nC·Ω - directly reduces combined conduction + switching loss, enabling >98 % efficiency in 2 kW telecom rectifiers
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external clamping in flyback and forward converter primary switches
Reduced Co(er)	93 pF - cuts stored output energy by ~40 % vs. prior-gen devices, lowering turn-on loss in high-frequency PFC
Body diode t_rr	382–764 ns - supports ZVS soft-switching in bridge topologies when paired with appropriate dead-time control

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1U 2 kW AC-DC front-end with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-side main switch in continuous conduction mode (CCM) boost PFC and synchronous rectifier in LLC secondary. Use Value: 0.057 Ω R_DS(on) and 74 nC Q_g enable >96.5 % full-load efficiency at 100 kHz switching, meeting 80 PLUS Titanium requirements.	Use Scenario: 48 V distributed power architecture (DPA) rectifier with 380 V DC input from upstream PFC. IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge (PSFB) topology operating at 150–200 kHz. Use Value: 226 mJ E_AS withstands bus transients during hot-swap events; 100 V/ns dv/dt rating prevents spurious turn-on in noisy telecom environments.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge leg for grid-tie inverter output stage. Use Value: 600 V V_DS rating accommodates 1000 V DC bus with safety margin; Co(er) = 93 pF minimizes switching loss at 16 kHz PWM frequency.	Use Scenario: IGBT replacement in 3-phase inverter drives for HVAC compressors and pumps (3–7.5 kW range). IC Role / Device Role / Timing Role: Low-side switching element in six-pack inverter module with discrete gate drivers. Use Value: 25 A continuous current at T_C = 100 °C supports 5.5 kW output with forced-air cooling; body diode t_rr < 764 ns enables clean freewheeling without cross-conduction risk.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1U 2 kW AC-DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-side main switch in continuous conduction mode (CCM) boost PFC and synchronous rectifier in LLC secondary.

Use Value: 0.057 Ω R_DS(on) and 74 nC Q_g enable >96.5 % full-load efficiency at 100 kHz switching, meeting 80 PLUS Titanium requirements.

Use Scenario: 48 V distributed power architecture (DPA) rectifier with 380 V DC input from upstream PFC.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge (PSFB) topology operating at 150–200 kHz.

Use Value: 226 mJ E_AS withstands bus transients during hot-swap events; 100 V/ns dv/dt rating prevents spurious turn-on in noisy telecom environments.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge leg for grid-tie inverter output stage.

Use Value: 600 V V_DS rating accommodates 1000 V DC bus with safety margin; Co(er) = 93 pF minimizes switching loss at 16 kHz PWM frequency.

Use Scenario: IGBT replacement in 3-phase inverter drives for HVAC compressors and pumps (3–7.5 kW range).

IC Role / Device Role / Timing Role: Low-side switching element in six-pack inverter module with discrete gate drivers.

Use Value: 25 A continuous current at T_C = 100 °C supports 5.5 kW output with forced-air cooling; body diode t_rr < 764 ns enables clean freewheeling without cross-conduction risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.045 Ω, Q_g = 85 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge; requires stronger gate driver	Preferred where PCB space allows and >40 A peak current is needed; not drop-in due to TO-247 vs. TO-220AB
IXFH60N60P	600 V, 60 A, R_DS(on) = 0.055 Ω, Q_g = 110 nC, TO-247 package	Lower R_DS(on) but significantly higher Q_g; slower switching and greater driver loss	Selected when conduction loss dominates over switching loss; unsuitable for >100 kHz designs due to Q_g penalty

Compared with STW62N60M2 and IXFH60N60P, the SIHP065N60E-GE3 offers optimal balance of low R_DS(on), moderate Q_g, and TO-220AB form factor - making it ideal for cost-sensitive, space-constrained 1–3 kW power supplies where thermal design targets T_C ≤ 100 °C.

Availability

SIHP065N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term production continuity.

Supply support for SIHP065N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching applications in telecom, industrial, and renewable energy systems - engineered for low FOM, avalanche robustness, and consistent parametric stability across temperature.

FAQ

What is the maximum continuous drain current for SIHP065N60E-GE3 at 100 °C case temperature?

The SIHP065N60E-GE3 supports 25 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This value reflects thermal derating from the 40 A rating at T_C = 25 °C, based on a linear derating factor of 2.0 W/°C and R_thJC = 0.5 °C/W. Designers must verify heatsink interface resistance to maintain safe junction temperatures below 150 °C under full load.

Does SIHP065N60E-GE3 have avalanche energy rating, and how is it tested?

Yes, the SIHP065N60E-GE3 is rated for 226 mJ single-pulse avalanche energy (E_AS). It is tested per the unclamped inductive switching (UIS) method defined in the datasheet: V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A. This rating confirms ruggedness against inductive kickback in hard-switched topologies like flyback and forward converters without external snubbers.

What is the gate threshold voltage range for SIHP065N60E-GE3, and why does it matter for drive circuit design?

The SIHP065N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at T_J = 25 °C. This relatively wide spread means gate drive must exceed 5 V reliably to ensure full enhancement across process and temperature variation. Using 10 V drive ensures R_DS(on) remains at its specified 0.057 Ω typ., avoiding partial turn-on and excessive conduction loss during transient conditions.

How does the body diode performance of SIHP065N60E-GE3 compare to standard FRDs in PFC applications?

The SIHP065N60E-GE3 body diode exhibits t_rr = 382–764 ns and Q_rr = 7.1–14.2 μC at T_J = 25 °C, which is slower and higher-charge than dedicated fast recovery diodes (FRDs). However, its integrated nature simplifies layout and reduces component count in interleaved PFC where synchronous rectification isn't used. For critical ZVS operation, external diode co-location or dead-time optimization is recommended.

Is SIHP065N60E-GE3 lead (Pb)-free and halogen-free, and what does the "-GE3" suffix indicate?

Yes, SIHP065N60E-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS and Vishay's material categorization standards. The "-GE3" suffix specifically denotes this Pb-free/halogen-free version in TO-220AB packaging, distinguishing it from the "-BE3" variant (alternate manufacturing location) and legacy leaded versions. Both -GE3 and -BE3 meet identical electrical and thermal specifications.

SIHP065N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP065N60E-GE3 FAQ

1.How can I place an order for SIHP065N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP065N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP065N60E-GE3 reliable?

The price and inventory of SIHP065N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP065N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP065N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP065N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP065N60E-GE3?

SIHP065N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP065N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP065N60E-GE3?

For technical support, including SIHP065N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP065N60E-GE3 requirements.

6.How does Aetrix verify that SIHP065N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP065N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP065N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP065N60E-GE3?

All SIHP065N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP065N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP065N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP065N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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