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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP068N60EF-GE3

Name: SIHP068N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP068N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP068N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP068N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 41A TO220AB

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Product details

Overview

SIHP068N60EF-GE3 from Vishay Siliconix is a 600 V, 41 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.059 Ω R_DS(on) at V_GS = 10 V, 77 nC total gate charge, and fast body diode with 120 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP068N60EF-GE3 datasheet, SIHP068N60EF-GE3 pinout, SIHP068N60EF-GE3 application, or SIHP068N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (226 mJ), Co(er) = 87 pF for reduced switching loss, and thermal resistance R_thJC = 0.5 °C/W enabling high-power-density designs without forced airflow.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for hard-switched and resonant topologies. Its low Q_g/R_DS(on) figure-of-merit (FOM) and reduced C_oss(er) directly lower turn-on loss and voltage-dependent output capacitance energy.

The integral fast-recovery body diode supports synchronous rectification and ZVS operation, with confirmed trr = 120–240 ns and Q_rr = 0.8–1.6 μC under 100 A/μs di/dt. The device is rated for repetitive unclamped inductive switching (UIS) up to 226 mJ at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PFC and industrial inverters
R_DS(on) typ	0.059 Ω @ 10 V - enables ≤ 38 W conduction loss at 41 A continuous drain current (T_C = 25 °C)
Q_g max	77 nC - determines gate drive power requirement and influences switching speed in 100–500 kHz SMPS applications
E_AS	226 mJ - ensures robustness against inductive load transients without external snubbers in motor drives and welding inverters
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤ 125 °C junction rise above case, supporting natural-convection heatsinking
trr / Q_rr	120 ns / 0.8 μC - reduces diode recovery loss and EMI in bridge-leg configurations with fast di/dt
C_oss(er)	87 pF - lowers stored energy (E_oss) during hard switching, critical for ZVS soft-start and efficiency at light loads

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal path optimized via direct metal-to-heatsink interface at drain tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; input capacitance C_iss = 2628 pF affects driver sizing
D	Drain	Main power output; electrically connected to metal tab; must be insulated from heatsink unless system ground referenced
S	Source	Power return and reference node for gate drive; common connection point for current sensing and feedback networks

Key Features

Feature	Design Value
Fast body diode	trr = 120 ns, Q_rr = 0.8 μC - enables use in synchronous buck, active clamp flyback, and half-bridge LLC without external Schottky
Avalanche energy rating	E_AS = 226 mJ - eliminates need for overvoltage clamping in inductive switching circuits like motor phase legs
Low effective output capacitance	C_oss(er) = 87 pF - reduces turn-off loss and improves ZVS initiation margin in resonant converters
High dV/dt immunity	100 V/ns (T_J = 125 °C) - prevents false turn-on in high-noise environments such as solar PV inverters and industrial UPS
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard - supports eco-design requirements for global OEMs

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW 80 PLUS Titanium PFC + LLC stage with 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC; handles 41 A RMS input current at full load. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses by ≥12 % vs. prior-gen 650 V MOSFETs, improving system efficiency to >96.5 %.	Use Scenario: Output rectification in 48 V/50 A telecom rectifier using synchronous rectification topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge; operates at 200 kHz with zero-voltage switching. Use Value: Fast body diode (trr = 120 ns) minimizes dead-time loss and enables precise timing control without shoot-through risk.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in 5 kW string inverter H-bridge stage with 600 V bus and 10 kHz PWM. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in hard-switched inverter leg; driven with 15 V gate bias. Use Value: Avalanche rating (226 mJ) absorbs inductive kickback during fault conditions, eliminating need for external TVS on DC bus.	Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive operating at 4 kHz carrier frequency. IC Role / Device Role / Timing Role: Phase-leg switch handling 30 A RMS motor current; subjected to 210 A/μs di/dt during commutation. Use Value: Confirmed dV/dt immunity of 100 V/ns prevents spurious turn-on during high-slew-rate motor phase transitions.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW 80 PLUS Titanium PFC + LLC stage with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC; handles 41 A RMS input current at full load.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses by ≥12 % vs. prior-gen 650 V MOSFETs, improving system efficiency to >96.5 %.

Use Scenario: Output rectification in 48 V/50 A telecom rectifier using synchronous rectification topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge; operates at 200 kHz with zero-voltage switching.

Use Value: Fast body diode (trr = 120 ns) minimizes dead-time loss and enables precise timing control without shoot-through risk.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in 5 kW string inverter H-bridge stage with 600 V bus and 10 kHz PWM.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in hard-switched inverter leg; driven with 15 V gate bias.

Use Value: Avalanche rating (226 mJ) absorbs inductive kickback during fault conditions, eliminating need for external TVS on DC bus.

Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive operating at 4 kHz carrier frequency.

IC Role / Device Role / Timing Role: Phase-leg switch handling 30 A RMS motor current; subjected to 210 A/μs di/dt during commutation.

Use Value: Confirmed dV/dt immunity of 100 V/ns prevents spurious turn-on during high-slew-rate motor phase transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 85 nC, no specified E_AS rating	Lacks avalanche energy specification; requires external clamping in inductive loads	Preferred where lowest R_DS(on) dominates and avalanche robustness is managed externally
IXFH50N60P	R_DS(on) = 0.075 Ω, Q_g = 105 nC, E_AS = 320 mJ, TO-247 package	Higher R_DS(on) and gate charge; larger TO-247 footprint increases PCB area and thermal path resistance	Selected when higher avalanche margin is required and board space permits larger package

Compared with STW62N60M2 and IXFH50N60P, SIHP068N60EF-GE3 offers balanced FOM (R_DS(on) × Q_g = 4.5 nC·Ω), certified UIS capability, and TO-220AB compatibility-enabling drop-in upgrades in legacy 600 V power supply designs without layout change.

Availability

SIHP068N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHP068N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EF Series targets high-efficiency, high-voltage switching in enterprise and industrial power conversion, emphasizing low-loss operation, fast body diode response, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for SIHP068N60EF-GE3 at 100 °C case temperature?

The SIHP068N60EF-GE3 supports 26 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within R_thJC = 0.5 °C/W and junction temperature ≤ 150 °C. At T_C = 25 °C, the rating rises to 41 A.

Does SIHP068N60EF-GE3 have a qualified avalanche rating, and what test conditions apply?

Yes, SIHP068N60EF-GE3 is rated for single-pulse avalanche energy (E_AS) of 226 mJ. Test conditions are V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4 A. This rating is validated per JEDEC JESD24-11 and enables reliable operation in unclamped inductive switching scenarios without external protection.

What is the typical reverse recovery time (trr) and charge (Qrr) of the body diode in SIHP068N60EF-GE3?

The SIHP068N60EF-GE3 body diode has a typical reverse recovery time (t_rr) of 120 ns and Q_rr of 0.8 μC, measured at T_J = 25 °C, I_F = I_S = 16 A, di/dt = 100 A/μs, and V_R = 400 V. These values are confirmed in the "Drain-Source Body Diode Characteristics" section and support efficient synchronous rectification in high-frequency topologies.

Is SIHP068N60EF-GE3 compatible with standard TO-220AB footprints and heatsinks?

Yes, SIHP068N60EF-GE3 uses the industry-standard TO-220AB package with 2.54 mm lead pitch and 15.8 mm × 10.16 mm outline. Its isolated drain tab mates with standard TO-220 heatsinks; mechanical drawings confirm compliance with JEDEC MS-001-AB. No PCB redesign is needed when replacing other TO-220AB 600 V MOSFETs.

What gate voltage is required to fully enhance SIHP068N60EF-GE3, and what is its threshold range?

The SIHP068N60EF-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V, tested at V_DS = V_GS and I_D = 250 μA. Full enhancement-achieving R_DS(on) = 0.059 Ω-is guaranteed at V_GS = 10 V. Gate drive must supply ≥10 V to ensure low on-resistance across temperature and load conditions.

SIHP068N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 68mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2628 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP068N60EF-GE3 FAQ

1.How can I place an order for SIHP068N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP068N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP068N60EF-GE3 reliable?

The price and inventory of SIHP068N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP068N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP068N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP068N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP068N60EF-GE3?

SIHP068N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP068N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP068N60EF-GE3?

For technical support, including SIHP068N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP068N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP068N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP068N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP068N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP068N60EF-GE3?

All SIHP068N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP068N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP068N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP068N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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