Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP074N65E-GE3

Name: SIHP074N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP074N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHP074N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP074N65E-GE3.pdf

Description:: E SERIES POWER MOSFET TO-220AB,

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHP074N65E-GE3 from Vishay Siliconix is a 650 V, 35 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.070 Ω R_DS(on) at V_GS = 10 V, 53 nC typical total gate charge, and 173 mJ single-pulse avalanche energy - optimized for high-efficiency server and telecom SMPS and PFC stages.

For engineers reviewing the SIHP074N65E-GE3 datasheet, SIHP074N65E-GE3 pinout, SIHP074N65E-GE3 application, or SIHP074N65E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) of 115 pF, and rated dv/dt capability of 100 V/ns at T_J = 125 °C for robust hard-switching operation.

Technical Context

This 4th-generation E-series MOSFET employs planar silicon technology with optimized cell layout to minimize conduction and switching losses. Its low effective output capacitance (Co(er) = 115 pF) and fast reverse recovery (t_rr = 447 ns typ.) support high-frequency operation in continuous conduction mode (CCM) PFC and resonant LLC topologies.

The device integrates a robust body diode with 1.2 V forward voltage at 19 A and 25 A peak reverse recovery current, enabling reliable freewheeling in bridge-leg configurations without external diode supplementation in many industrial motor drive and solar inverter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified rails with ≥30% safety margin in telecom and server PSUs
R_DS(on) typ.	0.070 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 19 A DC, critical for thermal management in compact PFC modules
Q_g typ.	53 nC - reduces gate driver power demand and allows use of lower-cost 1-A drivers in 100–300 kHz SMPS
E_AS	173 mJ - withstands unclamped inductive switching events in motor drives and welders without failure
dv/dt rating	100 V/ns at T_J = 125 °C - ensures noise immunity and prevents spurious turn-on in high-dV/dt half-bridge environments
Co(er)	115 pF - lowers capacitive switching loss and improves efficiency in hard-switched 520 V bus applications
T_J range	−55 to +150 °C - qualified for extended industrial ambient conditions including outdoor solar inverters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and JEDEC-compliant footprint for mechanical stability and thermal transfer to heatsink via case contact.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <1 μA leakage current handling per IGSS spec
D (Drain)	Main power output terminal	Connected to TO-220AB metal tab; electrically tied to drain; requires insulated mounting when floating
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.71 Ω·nC - directly reduces combined conduction + switching loss, enabling >98% efficiency in 3.3 kW PFC stages
Avalanche-rated (UIS)	173 mJ single-pulse - eliminates need for external snubbers in inductive load switching, reducing BOM count
Low Co(er)	115 pF - cuts stored output energy by ~30% vs. prior-gen 650 V MOSFETs, improving light-load efficiency
Body diode t_rr	447 ns typ. - minimizes commutation loss and EMI in synchronous rectification and half-bridge freewheeling
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3.3 kW front-end AC/DC converters with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC and primary switch in LLC half-bridge, operating at 100–200 kHz. Use Value: Low R_DS(on) and Co(er) reduce thermal stress and improve full-load efficiency beyond 97.5%, meeting 80 PLUS Titanium requirements.	Use Scenario: 48 V intermediate bus generation in distributed telecom power systems with 380 V DC input. IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge (PSFB) topology handling 25 A continuous drain current. Use Value: 173 mJ UIS rating withstands line transients and hot-swap events without derating, ensuring field reliability.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting up to 10 kW from photovoltaic arrays. IC Role / Device Role / Timing Role: DC-link MOSFET in H-bridge output stage, switching at 16 kHz with sinusoidal PWM modulation. Use Value: 150 °C max junction temperature and −55 °C min storage rating support outdoor deployment across global climates.	Use Scenario: Inverter leg switching in 7.5 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, conducting 35 A RMS with 100 A peak surge. Use Value: Body diode V_SD = 1.2 V and t_rr = 447 ns limit freewheeling loss and reduce heatsink size by 22% vs. discrete diode solutions.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3.3 kW front-end AC/DC converters with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-side switch in boost PFC and primary switch in LLC half-bridge, operating at 100–200 kHz.

Use Value: Low R_DS(on) and Co(er) reduce thermal stress and improve full-load efficiency beyond 97.5%, meeting 80 PLUS Titanium requirements.

Use Scenario: 48 V intermediate bus generation in distributed telecom power systems with 380 V DC input.

IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge (PSFB) topology handling 25 A continuous drain current.

Use Value: 173 mJ UIS rating withstands line transients and hot-swap events without derating, ensuring field reliability.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting up to 10 kW from photovoltaic arrays.

IC Role / Device Role / Timing Role: DC-link MOSFET in H-bridge output stage, switching at 16 kHz with sinusoidal PWM modulation.

Use Value: 150 °C max junction temperature and −55 °C min storage rating support outdoor deployment across global climates.

Use Scenario: Inverter leg switching in 7.5 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, conducting 35 A RMS with 100 A peak surge.

Use Value: Body diode V_SD = 1.2 V and t_rr = 447 ns limit freewheeling loss and reduce heatsink size by 22% vs. discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N65M5	R_DS(on) = 0.075 Ω, Q_g = 62 nC, Co(er) = 130 pF - higher switching loss due to +13% Q_g and +13% Co(er)	Same 650 V/35 A rating but less efficient in >150 kHz PFC; requires larger gate driver	Prefer SIHP074N65E-GE3 where efficiency >97.8% or gate drive current <1.2 A is required
IXTH76N65X2	R_DS(on) = 0.065 Ω, Q_g = 105 nC, E_AS = 220 mJ - lower R_DS(on) but 98% higher Q_g increases driver cost and loss	Better for avalanche-intensive welding supplies; overkill for telecom SMPS due to excessive Q_g	Select SIHP074N65E-GE3 for balanced performance in high-volume server/telecom PSUs with tight thermal budgets

Compared with STW65N65M5 and IXTH76N65X2, SIHP074N65E-GE3 delivers optimal trade-off between conduction loss (0.070 Ω), switching loss (53 nC Q_g, 115 pF Co(er)), and ruggedness (173 mJ E_AS) - making it the preferred choice for cost-sensitive, high-efficiency 650 V power conversion where gate drive simplicity and thermal headroom are critical.

Availability

SIHP074N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term production continuity.

Supply support for SIHP074N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous AEC-Q101 and industrial qualification.

The E Series Power MOSFET product line targets high-efficiency, high-reliability AC/DC and DC/DC conversion in datacenter, telecom, and renewable energy systems - emphasizing low FOM, avalanche ruggedness, and thermally robust packaging.

FAQ

What is the maximum continuous drain current rating for SIHP074N65E-GE3 at 100 °C case temperature?

The SIHP074N65E-GE3 has a continuous drain current rating of 24 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and must be used with R_thJC = 0.5 °C/W to calculate junction temperature rise. The SIHP074N65E-GE3 maintains safe operation up to 150 °C junction temperature.

Does SIHP074N65E-GE3 support logic-level gate drive?

No, SIHP074N65E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and R_DS(on) is specified at V_GS = 10 V. It requires a 10 V gate drive for full enhancement and minimal on-resistance. Using 5 V logic drive results in significantly elevated R_DS(on) and unacceptable conduction loss. The SIHP074N65E-GE3 must be driven with a dedicated 10–15 V gate driver.

What is the body diode reverse recovery charge (Q_rr) of SIHP074N65E-GE3, and why does it matter?

The SIHP074N65E-GE3 has a reverse recovery charge (Q_rr) of 7–14 μC, measured at T_J = 25 °C, I_F = 19 A, and di/dt = 100 A/μs. This parameter directly impacts switching loss and EMI during commutation in bridge circuits. Lower Q_rr reduces turn-off loss and diode-induced voltage spikes. The SIHP074N65E-GE3's Q_rr enables clean zero-voltage switching (ZVS) transitions in soft-switched topologies.

Can SIHP074N65E-GE3 replace older 600 V MOSFETs in existing designs?

SIHP074N65E-GE3 is not a direct drop-in replacement for 600 V devices due to its higher 650 V V_DS rating and different R_DS(on)/Q_g profile. While pin-compatible with TO-220AB footprints, system-level validation is required for gate drive timing, snubber sizing, and thermal margin - especially in legacy 600 V designs operating near breakdown. The SIHP074N65E-GE3 offers improved ruggedness but may require minor layout review.

What is the thermal resistance from junction to case (R_thJC) for SIHP074N65E-GE3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHP074N65E-GE3 is 0.5 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to the drain-connected TO-220AB metal tab and assumes proper mounting with thermal interface material and adequate heatsink contact pressure. The SIHP074N65E-GE3's low R_thJC enables high-power dissipation with minimal temperature rise - critical for compact, fanless power supplies.

SIHP074N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 79mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2904 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP074N65E-GE3 FAQ

1.How can I place an order for SIHP074N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP074N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP074N65E-GE3 reliable?

The price and inventory of SIHP074N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP074N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP074N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP074N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP074N65E-GE3?

SIHP074N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP074N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP074N65E-GE3?

For technical support, including SIHP074N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP074N65E-GE3 requirements.

6.How does Aetrix verify that SIHP074N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP074N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP074N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP074N65E-GE3?

All SIHP074N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP074N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP074N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP074N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …