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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP080N60E-GE3

Name: SIHP080N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP080N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP080N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP080N60E-GE3.pdf

Description:: E SERIES POWER MOSFET TO-220AB,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP080N60E-GE3 from Vishay Siliconix is a 600 V, 35 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.070 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and 226 mJ single-pulse avalanche energy - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHP080N60E-GE3 datasheet, SIHP080N60E-GE3 pinout, SIHP080N60E-GE3 application, or SIHP080N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) (79 pF), and rated dv/dt capability (100 V/ns at T_J = 125 °C) for hard-switched industrial and telecom power designs.

Technical Context

This 4th-generation E-series MOSFET employs planar stripe cell structure with optimized gate oxide and trench-assisted field shaping to achieve balanced conduction and switching losses. Its 0.55 °C/W junction-to-case thermal resistance supports high-power density operation up to 227 W at T_C = 25 °C.

The device integrates an avalanche-rated body diode with 441 ns typical reverse recovery time (T_J = 25 °C, I_F = 17 A, di/dt = 80 A/μs) and 5.2 μC Q_rr, enabling robust performance in inductive turn-off and ZVS-capable topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage handling
R_DS(on) typ	0.070 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 17 A continuous drain current
Q_g max	63 nC - determines gate drive power requirement and switching speed in 100–500 kHz SMPS applications
E_AS	226 mJ - ensures reliable unclamped inductive switching without external snubbers in motor drives and welders
C_oss(er)	79 pF - reduces capacitive turn-on loss and improves efficiency in high-frequency hard-switched converters
T_J range	−55 to +150 °C - qualified for industrial ambient environments and thermally demanding PFC boost stages
dv/dt rating	100 V/ns @ T_J = 125 °C - suppresses false turn-on in high-di/dt half-bridge configurations

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage distance, Pb-free and halogen-free per Vishay S21-0062-Rev. A.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires ≤0.7 Ω gate resistance to limit ringing and ensure stable 31 ns turn-on delay
D (Drain)	High-side power terminal	Connected to heat sink via isolated tab; carries full load current and withstands 600 V blocking with 0.55 °C/W thermal path
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; ties to power ground with minimal inductance to reduce shoot-through risk

Key Features

Feature	Design Value
4th-gen E-series technology	Delivers 25 % lower R_DS(on) × Q_g FOM vs. prior generation, directly reducing combined conduction + switching loss
Avalanche energy rating	226 mJ single-pulse - eliminates need for external clamping in 28.2 mH inductive test circuit (I_AS = 4.0 A)
Low effective output capacitance	C_oss(er) = 79 pF - cuts stored energy loss by >30 % versus comparable 600 V MOSFETs with higher C_oss
Body diode Q_rr	5.2 μC typical - minimizes reverse recovery loss and EMI in discontinuous conduction mode (DCM) PFC
High dv/dt immunity	100 V/ns at 125 °C - prevents spurious turn-on during fast voltage transients in bridge-leg switching

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW front-end AC-DC rectifiers with active PFC and LLC resonant stages. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC and hard-switched LLC half-bridge. Use Value: 0.070 Ω R_DS(on) and 63 nC Q_g enable >96 % system efficiency at full load while maintaining thermal margin on 2-oz copper heatsinks.	Use Scenario: Output rectification and isolation in 48 V telecom secondary-side DC-DC modules with synchronous rectification. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge topology operating at 200–300 kHz. Use Value: 1.2 V V_SD body diode forward drop and 441 ns t_rr reduce conduction loss and reverse recovery spikes under 17 A load current.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with dual-stage conversion (boost + H-bridge). IC Role / Device Role / Timing Role: Boost switch in MPPT stage and H-bridge leg in 3-phase inverter output stage. Use Value: 226 mJ E_AS rating handles inductive kickback during grid fault conditions without failure.	Use Scenario: Inverter leg switching in 7.5 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: IGBT replacement in 600 V, 20 kHz PWM-driven three-phase inverter outputs. Use Value: 100 V/ns dv/dt immunity and −55 to +150 °C T_J range ensure reliable operation in enclosed cabinet environments with ambient up to 70 °C.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW front-end AC-DC rectifiers with active PFC and LLC resonant stages.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC and hard-switched LLC half-bridge.

Use Value: 0.070 Ω R_DS(on) and 63 nC Q_g enable >96 % system efficiency at full load while maintaining thermal margin on 2-oz copper heatsinks.

Use Scenario: Output rectification and isolation in 48 V telecom secondary-side DC-DC modules with synchronous rectification.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge topology operating at 200–300 kHz.

Use Value: 1.2 V V_SD body diode forward drop and 441 ns t_rr reduce conduction loss and reverse recovery spikes under 17 A load current.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with dual-stage conversion (boost + H-bridge).

IC Role / Device Role / Timing Role: Boost switch in MPPT stage and H-bridge leg in 3-phase inverter output stage.

Use Value: 226 mJ E_AS rating handles inductive kickback during grid fault conditions without failure.

Use Scenario: Inverter leg switching in 7.5 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: IGBT replacement in 600 V, 20 kHz PWM-driven three-phase inverter outputs.

Use Value: 100 V/ns dv/dt immunity and −55 to +150 °C T_J range ensure reliable operation in enclosed cabinet environments with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.065 Ω, Q_g = 72 nC, TO-247 package, no specified E_AS rating	Higher gate drive power required; lacks avalanche qualification for unclamped inductive loads	Prefer SIHP080N60E-GE3 where ruggedness in welding or motor startup is critical
IXFH50N60P	R_DS(on) = 0.085 Ω, Q_g = 52 nC, TO-247, 150 mJ E_AS	Lower switching loss but higher conduction loss; smaller avalanche margin	Choose SIHP080N60E-GE3 when balancing both conduction and avalanche robustness in PFC + inverter combos

Compared with STW62N60M2 and IXFH50N60P, SIHP080N60E-GE3 delivers superior FOM (4.41 vs. 4.68 and 4.42), verified avalanche endurance, and TO-220AB compatibility for cost-sensitive industrial power designs requiring proven ruggedness.

Availability

SIHP080N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP080N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-ruggedness power conversion in telecom, industrial, and renewable energy systems - emphasizing low FOM, avalanche rating, and thermal robustness.

FAQ

What is the maximum continuous drain current for SIHP080N60E-GE3 at 100 °C case temperature?

The SIHP080N60E-GE3 supports 22 A continuous drain current at T_C = 100 °C, derated linearly from 35 A at 25 °C using the 1.8 W/°C derating factor. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 92376 and applies under steady-state thermal conditions with proper heatsinking.

Does SIHP080N60E-GE3 have a fully rated avalanche capability?

Yes, SIHP080N60E-GE3 is fully rated for single-pulse avalanche energy at 226 mJ (tested per JEDEC JESD24-11), with defined test conditions: V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A. This rating is explicitly documented in the Absolute Maximum Ratings section of the datasheet.

What is the gate threshold voltage range for SIHP080N60E-GE3?

The SIHP080N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This specification ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against false triggering in noisy industrial environments.

Can SIHP080N60E-GE3 be used in zero-voltage switching (ZVS) topologies?

Yes, SIHP080N60E-GE3 is suitable for ZVS applications due to its low C_oss(er) of 79 pF and controlled C_oss profile (105 pF typical), which minimize turn-on loss and enable efficient resonant transitions. Its 441 ns reverse recovery time also supports soft commutation in LLC and phase-shifted full-bridge converters.

Is SIHP080N60E-GE3 RoHS-compliant and halogen-free?

Yes, SIHP080N60E-GE3 is lead (Pb)-free and halogen-free, compliant with EU RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-GE3" suffix explicitly denotes this environmental compliance, and the device meets JEDEC JS-001 ESD standards.

SIHP080N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2557 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP080N60E-GE3 FAQ

1.How can I place an order for SIHP080N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP080N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP080N60E-GE3 reliable?

The price and inventory of SIHP080N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP080N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP080N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP080N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP080N60E-GE3?

SIHP080N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP080N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP080N60E-GE3?

For technical support, including SIHP080N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP080N60E-GE3 requirements.

6.How does Aetrix verify that SIHP080N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP080N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP080N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP080N60E-GE3?

All SIHP080N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP080N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP080N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP080N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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