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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP085N60EF-GE3

Name: SIHP085N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP085N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP085N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP085N60EF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP085N60EF-GE3 from Vishay Siliconix is a 600 V, 34 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.073 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and fast body diode with 109 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP085N60EF-GE3 datasheet, SIHP085N60EF-GE3 pinout, SIHP085N60EF-GE3 application, or SIHP085N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (173 mJ), low effective output capacitance (C_o(er) = 107 pF), and thermal resistance of 0.55 °C/W junction-to-case - critical for thermally constrained high-power converter designs.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series superjunction technology optimized for hard-switched and resonant topologies. Its low R_DS(on) × Q_g figure of merit (≈4.7 Ω·nC) and reduced C_oss (100 pF typ.) enable high-frequency operation while maintaining low E_oss and dv/dt robustness (100 V/ns).

The integrated fast-recovery body diode supports synchronous rectification and ZVS transitions, with confirmed trr = 109 ns and Q_rr = 0.6 μC at T_J = 25 °C, IS = 17 A, di/dt = 100 A/μs. The device is rated for repetitive unclamped inductive switching and operates across -55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes in PFC and industrial inverters
R_DS(on) typ @ 25 °C	0.073 Ω - enables <1.2 W conduction loss at 17 A continuous drain current, reducing heatsink requirements
Q_g max	63 nC - determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers
E_AS	173 mJ - ensures reliable operation under unclamped inductive load conditions without external snubbers
R_thJC	0.55 °C/W - allows 184 W power dissipation with ≤100 °C case-to-ambient rise, enabling compact thermal design
trr / Q_rr	109 ns / 0.6 μC - minimizes diode recovery loss and EMI in bridge-leg and LLC resonant configurations

Pinout & Package

SIHP085N60EF-GE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard lead spacing, and RoHS-compliant matte tin plating. Thermal path is optimized via direct die-to-tab mounting for low R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 2733 pF requires careful gate resistor selection (R_g = 9.1 Ω typical for 32 ns t_d(on))
D (Drain)	High-side power terminal	Connected to internal die backside and metal tab; electrically isolated from mounting surface per TO-220AB spec
S (Source)	Power return and reference node	Serves as common reference for gate drive and current sensing; ties to PCB ground plane for low-inductance return path

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.7 Ω·nC - directly reduces combined conduction + switching loss, improving efficiency in 100–300 kHz SMPS
Fast body diode (trr = 109 ns)	Enables use in synchronous rectifier and half-bridge topologies without external Schottky diodes
Avalanche energy rating (E_AS = 173 mJ)	Eliminates need for external clamping circuits in inductive load switching applications like motor drives
Low C_o(er) (107 pF)	Reduces turn-off loss and improves dv/dt immunity during hard switching, especially in high-voltage PFC stages

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converters delivering >1 kW output. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC bus with 34 A peak current capability. Use Value: Low R_DS(on) and fast body diode reduce conduction loss and dead-time loss, increasing overall system efficiency by ≥0.8 % at full load.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 65 kHz with interleaved topology. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated switch managing 600 V blocking and 21 A continuous current at 100 °C case temperature. Use Value: Confirmed 173 mJ UIS rating and low Q_rr minimize stress during line transients and improve reliability over 10-year field life.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level MPPT converters interfacing photovoltaic arrays up to 1000 VDC. IC Role / Device Role / Timing Role: High-voltage switching device with 600 V V_DS rating and 150 °C max junction temperature for outdoor ambient operation. Use Value: Stable R_DS(on) temperature coefficient (0.56 V/°C) and low thermal resistance ensure predictable derating across wide temperature swings.	Use Scenario: Inverter leg switch in 5–10 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Robust N-channel MOSFET used in three-phase IGBT replacement designs requiring fast diode recovery and high dV/dt immunity. Use Value: Verified 50 V/ns reverse diode dv/dt rating and 109 ns trr support clean commutation in 16 kHz PWM-driven induction motor loads.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converters delivering >1 kW output.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC bus with 34 A peak current capability.

Use Value: Low R_DS(on) and fast body diode reduce conduction loss and dead-time loss, increasing overall system efficiency by ≥0.8 % at full load.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 65 kHz with interleaved topology.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated switch managing 600 V blocking and 21 A continuous current at 100 °C case temperature.

Use Value: Confirmed 173 mJ UIS rating and low Q_rr minimize stress during line transients and improve reliability over 10-year field life.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level MPPT converters interfacing photovoltaic arrays up to 1000 VDC.

IC Role / Device Role / Timing Role: High-voltage switching device with 600 V V_DS rating and 150 °C max junction temperature for outdoor ambient operation.

Use Value: Stable R_DS(on) temperature coefficient (0.56 V/°C) and low thermal resistance ensure predictable derating across wide temperature swings.

Use Scenario: Inverter leg switch in 5–10 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Robust N-channel MOSFET used in three-phase IGBT replacement designs requiring fast diode recovery and high dV/dt immunity.

Use Value: Verified 50 V/ns reverse diode dv/dt rating and 109 ns trr support clean commutation in 16 kHz PWM-driven induction motor loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 58 A, R_DS(on) = 0.055 Ω, Q_g = 85 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge; requires stronger gate driver	Prefer when higher continuous current (>40 A) and lower R_DS(on) outweigh layout space and drive complexity constraints
IXFH32N60P	600 V, 32 A, R_DS(on) = 0.13 Ω, Q_g = 52 nC, TO-247 package	Higher on-resistance but lower Q_g; no specified E_AS rating or fast body diode data	Select when gate drive power budget is tight and avalanche robustness is not required in the target application

Compared with STW62N60M2 and IXFH32N60P, SIHP085N60EF-GE3 offers optimal balance of low R_DS(on), moderate Q_g, certified avalanche capability, and fast body diode - making it preferred for space-constrained, high-reliability 34 A PFC and SMPS designs where TO-220AB form factor is mandated.

Availability

SIHP085N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIHP085N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and thermal performance.

The EF Series - including SIHP085N60EF-GE3 - was engineered for high-efficiency, high-reliability switch-mode power conversion in demanding industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHP085N60EF-GE3 at 100 °C case temperature?

The SIHP085N60EF-GE3 has a continuous drain current rating of 21 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations alongside R_thJC = 0.55 °C/W to ensure junction temperature remains ≤150 °C under worst-case operating conditions. The SIHP085N60EF-GE3 datasheet confirms this rating is valid for T_J = 150 °C with V_GS = 10 V.

Does SIHP085N60EF-GE3 have a qualified avalanche rating, and what is its value?

Yes, SIHP085N60EF-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 173 mJ, tested per JEDEC JESD24-11. This rating is verified at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.5 A. The SIHP085N60EF-GE3 specification sheet explicitly lists this parameter in the Absolute Maximum Ratings section, confirming its suitability for inductive load switching without external protection.

What is the reverse recovery time (trr) and charge (Qrr) of the body diode in SIHP085N60EF-GE3?

The body diode of SIHP085N60EF-GE3 has a typical reverse recovery time (t_rr) of 109 ns and reverse recovery charge (Q_rr) of 0.6 μC, measured at T_J = 25 °C, I_F = I_S = 17 A, di/dt = 100 A/μs, and V_R = 400 V. These values are documented in the "Drain-Source Body Diode Characteristics" table of the SIHP085N60EF-GE3 datasheet and confirm its fast-recovery capability for use in synchronous rectification and bridge-leg configurations.

Is SIHP085N60EF-GE3 lead (Pb)-free and halogen-free?

Yes, SIHP085N60EF-GE3 is lead (Pb)-free and halogen-free, compliant with Vishay's material categorization standards per document www.vishay.com/doc?99912. The "-GE3" suffix denotes RoHS-compliant, matte tin-plated leads and halogen-free molding compound. This is confirmed in the Ordering Information section of the SIHP085N60EF-GE3 datasheet, which states "Lead (Pb)-free and halogen-free" for the TO-220AB package variant.

What is the gate-source threshold voltage range for SIHP085N60EF-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHP085N60EF-GE3 is specified from 3.0 V to 5.0 V, measured at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while providing noise margin against spurious conduction. The SIHP085N60EF-GE3 datasheet lists this parameter in the Static Specifications table, confirming compatibility with conventional MOSFET gate drivers and microcontroller GPIO outputs buffered through level-shifting circuits.

SIHP085N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 84mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2733 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP085N60EF-GE3 FAQ

1.How can I place an order for SIHP085N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP085N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP085N60EF-GE3 reliable?

The price and inventory of SIHP085N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP085N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP085N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP085N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP085N60EF-GE3?

SIHP085N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP085N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP085N60EF-GE3?

For technical support, including SIHP085N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP085N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP085N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP085N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP085N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP085N60EF-GE3?

All SIHP085N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP085N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP085N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP085N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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