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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP100N60E-GE3

Name: SIHP100N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP100N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP100N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP100N60E-GE3.pdf

Description:: MOSFET N-CH 600V 30A TO220AB

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Product details

Overview

SIHP100N60E-GE3 from Vishay Siliconix is a 600 V, 30 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.086 Ω R_DS(on) at V_GS = 10 V, 50 nC total gate charge, and 226 mJ single-pulse avalanche energy-designed for high-efficiency switch-mode power supplies in telecom and server applications.

For engineers reviewing the SIHP100N60E-GE3 datasheet, SIHP100N60E-GE3 pinout, SIHP100N60E-GE3 application, or SIHP100N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced switching losses, Co(er) of 64 pF, and rated operation up to 150 °C junction temperature in hard-switched PFC and DC-DC stages.

Technical Context

This 4th-generation E-series MOSFET uses planar stripe technology optimized for high-voltage, medium-current SMPS topologies. Its 600 V V_DS rating supports 400 V DC bus designs with margin, while the 0.6 °C/W R_thJC enables high-power dissipation in TO-220AB without forced airflow.

Dynamic performance is defined by 33 nC typical Q_g, 10 nC Q_gd, and 358 ns typical reverse recovery time (t_rr) of the integral body diode-critical for ZVS/ZCS resonant converters and synchronous rectification where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % voltage margin for surge and ringing in telecom/PFC applications
R_DS(on) typ	0.086 Ω at V_GS = 10 V - enables ≤2.3 W conduction loss at 13 A continuous drain current
Q_g max	50 nC - determines gate drive power requirement and switching speed in 100–500 kHz SMPS designs
E_AS	226 mJ - ensures robustness against unclamped inductive switching events in motor drives and welders
C_oss(er)	64 pF - defines stored output capacitance energy affecting turn-on loss and resonant tank design
t_rr typ	358 ns - sets minimum dead-time requirements and influences diode-induced voltage overshoot in half-bridge configurations
R_thJC	0.6 °C/W - allows 208 W power dissipation with ≤125 °C case-to-ambient ΔT under heatsink mounting

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.6 mm creepage/clearance per IEC 60950-1. Thermal pad on drain side requires mechanical and thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 13 nC Q_gs defines Miller plateau duration and gate resistor sizing
D (Drain)	High-side power output	Connected to DC bus or transformer primary; electrically tied to metal tab for thermal path
S (Source)	Power return/reference	Common node for gate drive return, current sensing, and PWM controller feedback in low-side switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.27 Ω·nC - reduces combined conduction + switching loss in 100–300 kHz PFC boost stages
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Co(er) = 64 pF	Energy-equivalent output capacitance - enables accurate calculation of turn-on loss (½ × C_oss(er) × V_DS² × f_sw)
Body diode t_rr = 358 ns	Fast recovery with softness factor >1 - minimizes voltage spikes and EMI during commutation in bridge topologies
150 °C T_J max	Extended thermal operating range - supports compact heatsink designs in sealed industrial enclosures

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 200 kHz with synchronous rectification on secondary. Use Value: 0.086 Ω R_DS(on) limits conduction loss to <1.5 W at 15 A RMS; 226 mJ E_AS withstands clamp circuit transients without derating.	Use Scenario: Boost PFC stage in dual-output 1.2 kW server PSU delivering 12 V/54 A and 5 V/20 A. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch operating at 65–120 kHz with critical conduction mode (CRM) transition. Use Value: Low Q_gd/Q_g ratio (10/33 nC) improves controllability during zero-crossing; 64 pF C_oss(er) reduces turn-on loss in high-frequency CRM operation.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switching in 5 kW string inverter's two-level inverter stage feeding LCL filter to grid. IC Role / Device Role / Timing Role: IGBT replacement in hard-switched inverter leg, driven by isolated gate driver with 25 Ω series resistance. Use Value: 30 A I_D rating supports 22 A RMS phase current; 358 ns t_rr enables clean commutation with <50 V overshoot at di/dt = 100 A/μs.	Use Scenario: Half-bridge resonant inverter in 8 kW induction cooker operating at 20–50 kHz with variable frequency control. IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge driving series-resonant tank with 15 μH inductor and 120 nF capacitor. Use Value: 0.6 °C/W R_thJC sustains 180 W dissipation at 100 °C case; 100 V/ns dv/dt rating prevents spurious turn-on during fast voltage transitions.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 200 kHz with synchronous rectification on secondary.

Use Value: 0.086 Ω R_DS(on) limits conduction loss to <1.5 W at 15 A RMS; 226 mJ E_AS withstands clamp circuit transients without derating.

Use Scenario: Boost PFC stage in dual-output 1.2 kW server PSU delivering 12 V/54 A and 5 V/20 A.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch operating at 65–120 kHz with critical conduction mode (CRM) transition.

Use Value: Low Q_gd/Q_g ratio (10/33 nC) improves controllability during zero-crossing; 64 pF C_oss(er) reduces turn-on loss in high-frequency CRM operation.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switching in 5 kW string inverter's two-level inverter stage feeding LCL filter to grid.

IC Role / Device Role / Timing Role: IGBT replacement in hard-switched inverter leg, driven by isolated gate driver with 25 Ω series resistance.

Use Value: 30 A I_D rating supports 22 A RMS phase current; 358 ns t_rr enables clean commutation with <50 V overshoot at di/dt = 100 A/μs.

Use Scenario: Half-bridge resonant inverter in 8 kW induction cooker operating at 20–50 kHz with variable frequency control.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge driving series-resonant tank with 15 μH inductor and 120 nF capacitor.

Use Value: 0.6 °C/W R_thJC sustains 180 W dissipation at 100 °C case; 100 V/ns dv/dt rating prevents spurious turn-on during fast voltage transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.055 Ω, Q_g = 65 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge increases drive loss	Select when >40 A peak current or lower R_DS(on) is required; verify PCB layout for TO-247 thermal relief
IXFH110N60P	600 V, 110 A, R_DS(on) = 0.032 Ω, Q_g = 120 nC, TO-247 package	Lower R_DS(on) but significantly higher Q_g and cost; not drop-in compatible due to TO-247 vs. TO-220AB	Choose for ultra-low conduction loss in high-duty-cycle industrial motor drives; requires gate driver redesign

Compared with STW62N60M2 and IXFH110N60P, SIHP100N60E-GE3 offers optimal balance of R_DS(on), Q_g, and package size for space-constrained 30 A SMPS designs-enabling direct TO-220AB heatsink integration without layout change, unlike TO-247 alternatives requiring new mounting and routing.

Availability

SIHP100N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, RoHS-compliant lead-free assembly, and long-term industrial lifecycle support.

Supply support for SIHP100N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power devices.

The E Series Power MOSFET product line targets high-frequency, high-efficiency switch-mode power conversion-optimized for PFC, LLC resonant, and hard-switched topologies in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHP100N60E-GE3 at 100 °C case temperature?

The SIHP100N60E-GE3 has a continuous drain current rating of 19 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 30 A at 25 °C reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations for sustained operation. The SIHP100N60E-GE3 datasheet confirms this value under "Continuous drain current (T_J = 150 °C)" condition.

Does SIHP100N60E-GE3 support logic-level gate drive?

No, SIHP100N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving the SIHP100N60E-GE3 with only 5 V may result in incomplete enhancement and excessive conduction loss. A 10–15 V gate drive is required for full performance and reliability.

What is the significance of the Co(er) parameter for SIHP100N60E-GE3 in power converter design?

Co(er) = 64 pF for SIHP100N60E-GE3 represents the energy-equivalent output capacitance, used to calculate turn-on switching loss as ½ × Co(er) × V_DS² × f_sw. Unlike C_oss, Co(er) accounts for nonlinear capacitance behavior across 0–480 V, making it essential for accurate loss modeling in high-frequency PFC and resonant converters where SIHP100N60E-GE3 is commonly deployed.

Can SIHP100N60E-GE3 be used in avalanche mode for circuit protection?

Yes, SIHP100N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy of 226 mJ. This specification allows safe operation during transient overcurrent events-such as transformer saturation or short-circuit faults-without requiring external clamping components, provided the test conditions (L = 28.2 mH, I_AS = 4.0 A) are respected in the SIHP100N60E-GE3 application.

How does the body diode performance of SIHP100N60E-GE3 compare to standard FRDs in bridge configurations?

The SIHP100N60E-GE3 body diode has t_rr = 358 ns and Q_rr = 5.1 μC at T_J = 25 °C, offering faster recovery than standard 600 V FRDs (typically >500 ns). However, its V_SD = 1.2 V is higher than dedicated FRDs (~0.9 V), increasing conduction loss during freewheeling. In bridge designs, this trade-off favors SIHP100N60E-GE3 where soft recovery reduces EMI, but discrete FRDs remain preferable for ultra-low-loss synchronous rectification.

SIHP100N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1851 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP100N60E-GE3 FAQ

1.How can I place an order for SIHP100N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP100N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP100N60E-GE3 reliable?

The price and inventory of SIHP100N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP100N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP100N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP100N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP100N60E-GE3?

SIHP100N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP100N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP100N60E-GE3?

For technical support, including SIHP100N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP100N60E-GE3 requirements.

6.How does Aetrix verify that SIHP100N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP100N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP100N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP100N60E-GE3?

All SIHP100N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP100N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP100N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP100N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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