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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP105N60EF-GE3

Name: SIHP105N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP105N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP105N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP105N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 29A TO220AB

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Product details

Overview

SIHP105N60EF-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.088 Ω R_DS(on) at V_GS = 10 V, 53 nC total gate charge, and fast body diode with 125 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHP105N60EF-GE3 datasheet, SIHP105N60EF-GE3 pinout, SIHP105N60EF-GE3 application, or SIHP105N60EF-GE3 equivalent, this device is selected for high-voltage, medium-current hard-switched topologies requiring avalanche-rated ruggedness, low Q_g/R_DS(on) FOM, and fast diode recovery in industrial and renewable energy inverters.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for reduced effective output capacitance (C_oss(er) = 63 pF) and low gate charge (Q_g = 35–53 nC), enabling high-frequency operation up to 100 kHz in continuous conduction mode PFC. Its 226 mJ single-pulse avalanche energy rating supports unclamped inductive switching robustness.

The integrated fast body diode exhibits 1.2 V forward voltage at 13 A and 0.8–1.6 μC Q_rr, minimizing commutation loss in bridge-leg configurations. Thermal resistance R_thJC = 0.6 °C/W enables 208 W power dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage
R_DS(on) typ	0.088 Ω @ 10 V - enables <1.5 W conduction loss at 13 A, reducing thermal load in 1–3 kW PFC stages
Q_g max	53 nC - determines gate driver current requirement (~100 mA peak for 500 ns turn-on)
E_AS	226 mJ - ensures reliable operation under unclamped inductive switching in motor drive H-bridges
t_rr	125 ns typ - limits diode reverse recovery loss during hard commutation in full-bridge ZVS converters
R_thJC	0.6 °C/W - allows junction temperature rise of ≤90 °C above case at 150 W dissipation with standard heatsink

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.6 mm creepage distance, Pb-free and halogen-free per Vishay S19-0438-Rev. A.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V threshold (3.0–5.0 V range), 0.7 Ω typical gate input resistance
D	Drain	Main high-side current path; electrically connected to metal tab; rated for 600 V blocking and 73 A pulsed current
S	Source	Power return node; forms common reference for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.66 Ω·nC - improves efficiency in 50–100 kHz hard-switched PFC by reducing combined switching + conduction loss
Fast body diode (t_rr = 125 ns)	Enables use in synchronous rectification and half-bridge topologies without external Schottky, cutting BOM cost
Avalanche energy rated (E_AS = 226 mJ)	Eliminates need for snubbers in inductive load switching, simplifying layout in welding and motor drive inverters
Low C_oss(er) (63 pF)	Reduces capacitive turn-off loss and EMI generation during high-dV/dt transitions in PV inverter DC link stages

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or two-switch forward PFC stage in 1U 2 kW AC/DC front-end. IC Role / Device Role / Timing Role: Main switch in boost PFC cell operating at 65–100 kHz with critical conduction mode control. Use Value: 0.088 Ω R_DS(on) and 53 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin below 105 °C junction.	Use Scenario: High-density 48 V telecom rectifier module with interleaved boost PFC and LLC resonant DC/DC. IC Role / Device Role / Timing Role: Primary-side switch in interleaved boost stage handling 20–30 A RMS input current. Use Value: Fast body diode (125 ns t_rr) minimizes shoot-through risk during phase interleaving, improving reliability at 100 kHz switching.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in string-level 3–5 kW transformerless PV inverters with unipolar modulation. IC Role / Device Role / Timing Role: Upper-leg IGBT/MOSFET replacement in H-bridge output stage managing 600 V DC bus. Use Value: 600 V V_DS rating and 226 mJ E_AS withstand DC bus transients during grid fault conditions without failure.	Use Scenario: Inverter leg switch in 3–7.5 HP variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Hard-switched IGBT alternative in 2–10 kHz PWM output stage driving induction motors. Use Value: Low R_DS(on) reduces conduction loss at partial load, while 0.6 °C/W R_thJC sustains 150 °C junction in enclosed cabinet environments.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or two-switch forward PFC stage in 1U 2 kW AC/DC front-end.

IC Role / Device Role / Timing Role: Main switch in boost PFC cell operating at 65–100 kHz with critical conduction mode control.

Use Value: 0.088 Ω R_DS(on) and 53 nC Q_g enable >96 % efficiency at full load while maintaining thermal margin below 105 °C junction.

Use Scenario: High-density 48 V telecom rectifier module with interleaved boost PFC and LLC resonant DC/DC.

IC Role / Device Role / Timing Role: Primary-side switch in interleaved boost stage handling 20–30 A RMS input current.

Use Value: Fast body diode (125 ns t_rr) minimizes shoot-through risk during phase interleaving, improving reliability at 100 kHz switching.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in string-level 3–5 kW transformerless PV inverters with unipolar modulation.

IC Role / Device Role / Timing Role: Upper-leg IGBT/MOSFET replacement in H-bridge output stage managing 600 V DC bus.

Use Value: 600 V V_DS rating and 226 mJ E_AS withstand DC bus transients during grid fault conditions without failure.

Use Scenario: Inverter leg switch in 3–7.5 HP variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT alternative in 2–10 kHz PWM output stage driving induction motors.

Use Value: Low R_DS(on) reduces conduction loss at partial load, while 0.6 °C/W R_thJC sustains 150 °C junction in enclosed cabinet environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 57 A, R_DS(on) = 0.055 Ω, Q_g = 72 nC, TO-247 package	Higher current rating but larger footprint and higher gate drive demand; no specified t_rr or E_AS	Prefer when higher continuous current (>35 A) and lower R_DS(on) outweigh gate drive complexity and board space constraints.
IXFH50N60P	600 V, 50 A, R_DS(on) = 0.085 Ω, Q_g = 120 nC, TO-247 package, no fast diode spec	Lower R_DS(on) but significantly higher Q_g; lacks documented fast body diode performance and avalanche rating	Select only if diode recovery is handled externally and gate driver can supply >200 mA peak current.

Compared with STW62N60M2 and IXFH50N60P, SIHP105N60EF-GE3 offers optimal balance of low gate charge, verified fast body diode, and rugged avalanche capability in compact TO-220AB-making it preferred for space-constrained, high-reliability PFC and inverter designs where diode commutation loss and transient robustness are critical.

Availability

SIHP105N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP105N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability validation.

The EF Series, including SIHP105N60EF-GE3, was engineered for high-efficiency, high-reliability switch-mode power conversion in demanding industrial and infrastructure applications-emphasizing low FOM, fast diode recovery, and avalanche ruggedness.

FAQ

What is the maximum continuous drain current rating for SIHP105N60EF-GE3 at 100 °C case temperature?

The SIHP105N60EF-GE3 has a continuous drain current rating of 19 A at T_C = 100 °C, derated linearly from 29 A at 25 °C using a 1.67 W/°C factor. This reflects real-world thermal limits in forced-air or heatsink-cooled deployments where case temperature exceeds ambient. The SIHP105N60EF-GE3 datasheet specifies this value in Absolute Maximum Ratings Table on page 1.

Does SIHP105N60EF-GE3 have a specified reverse recovery time for its body diode?

Yes, the SIHP105N60EF-GE3 body diode has a typical reverse recovery time (t_rr) of 125 ns, measured at T_J = 25 °C, I_F = 13 A, di/dt = 100 A/μs, and V_R = 400 V. This value is explicitly listed in the Drain-Source Body Diode Characteristics table on page 2 of the Vishay S19-0438 datasheet, confirming its suitability for high-frequency hard-switched topologies.

Is SIHP105N60EF-GE3 avalanche-rated, and what is its single-pulse energy rating?

Yes, SIHP105N60EF-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) energy of 226 mJ, tested per note b: V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.0 A. This rating is published in the Absolute Maximum Ratings table and confirms ruggedness for inductive load switching without external protection.

What is the gate-source threshold voltage range for SIHP105N60EF-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHP105N60EF-GE3 is specified as 3.0 V minimum to 5.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction near 3 V logic levels. The value appears in the Static Specifications table on page 2 of the official datasheet.

What package type does SIHP105N60EF-GE3 use, and is the drain electrically connected to the tab?

SIHP105N60EF-GE3 uses the TO-220AB package with drain-connected metal tab, as confirmed by the "Configuration: Single" and pin diagram on page 1 of the Vishay datasheet. The tab serves as the drain terminal and must be electrically isolated from heatsink unless referenced to drain potential. This mechanical and electrical configuration is standard for high-power TO-220 variants and directly impacts thermal and safety design.

SIHP105N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 102mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP105N60EF-GE3 FAQ

1.How can I place an order for SIHP105N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP105N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP105N60EF-GE3 reliable?

The price and inventory of SIHP105N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP105N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP105N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP105N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP105N60EF-GE3?

SIHP105N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP105N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP105N60EF-GE3?

For technical support, including SIHP105N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP105N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP105N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP105N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP105N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP105N60EF-GE3?

All SIHP105N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP105N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP105N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP105N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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