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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP10N40D-E3

Name: SIHP10N40D-E3
Brand: Vishay Siliconix
SKU: SIHP10N40D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP10N40D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP10N40D-E3.pdf

Description:: MOSFET N-CH 400V 10A TO220AB

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Product details

Overview

SIHP10N40D-E3 from Vishay Siliconix is a 400 V, 10 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V, Q_g = 30 nC, and avalanche-rated (E_AS = 194 mJ). It serves as a main switching device in high-voltage SMPS, motor drives, and induction heating circuits where ruggedness and fast switching are required.

For engineers reviewing the SIHP10N40D-E3 datasheet, SIHP10N40D-E3 pinout, SIHP10N40D-E3 application, or SIHP10N40D-E3 equivalent, key selection criteria include its 400 V V_DS rating, low 0.6 Ω on-resistance at 10 V gate drive, 30 nC total gate charge for efficient hard-switching, and integrated body diode with 230 ns reverse recovery time - all validated for industrial and telecom power systems.

Technical Context

This MOSFET employs planar VDMOS technology optimized for high-voltage switching with low figure-of-merit (R_DS(on) × Q_g). Its gate threshold voltage (3–5 V) ensures reliable turn-on with standard 10 V logic-level drivers, while dV/dt immunity of 24 V/ns at T_J = 125 °C supports noise-resistant operation in high-di/dt environments.

The device integrates a robust intrinsic body diode rated for 10 A continuous source current and 40 A pulsed current, with specified Q_rr = 1.6 μC and t_rr = 230 ns at I_F = 5 A. Thermal resistance R_thJC = 0.85 °C/W enables high-power dissipation up to 147 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports primary-side switching in 380 V DC bus and 400 V AC rectified applications without derating
R_DS(on) max	0.6 Ω at V_GS = 10 V, I_D = 5 A - enables <1.5 W conduction loss at 10 A, suitable for 100–300 W SMPS
Q_g max	30 nC - allows efficient gate driving with low-power ICs (e.g., UCC27531) at 100–500 kHz switching frequencies
E_AS	194 mJ (single-pulse) - withstands unclamped inductive energy in motor drive and welding snubberless designs
t_rr	230 ns - limits diode recovery losses during synchronous rectification or freewheeling in half-bridge topologies
R_thJC	0.85 °C/W - permits >100 W continuous dissipation with moderate heatsinking (e.g., 1°C/W sink + interface)
I_D cont	10 A at T_C = 25 °C - defines maximum steady-state current under ideal thermal conditions

Pinout & Package

SIHP10N40D-E3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin vertical lead configuration, and RoHS-compliant matte tin plating. Mounting requires mechanical isolation unless drain is referenced to chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V gate drive; input capacitance C_iss = 526 pF requires low-impedance driver to minimize switching loss
D (Drain)	High-side power terminal	Connected to TO-220 tab; electrically isolated from mounting surface unless specified; handles full 400 V blocking
S (Source)	Power return and reference node	Serves as local ground for gate drive; body diode anode; must be routed with low inductance in high-di/dt paths

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	18 Ω·nC - reduces combined conduction and switching losses in 100–300 kHz hard-switched converters
Avalanche energy rating	194 mJ single-pulse - eliminates need for external clamping in inductive load switching (e.g., solenoid drivers)
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on in noisy high-voltage gate-drive layouts
Rugged body diode	t_rr = 230 ns, Q_rr = 1.6 μC - supports reliable freewheeling in non-synchronous buck and flyback converters
TO-220AB thermal performance	R_thJC = 0.85 °C/W - enables compact heatsink design for 100–150 W industrial power stages

Applications

Server SMPS Primary Switch	Induction Heating Half-Bridge
Use Scenario: High-efficiency 80 PLUS Titanium server PSU operating at 300–500 kHz with 380 V DC bus. IC Role / Device Role / Timing Role: Main switch in LLC resonant converter primary leg, handling 10 A peak current at 400 V blocking. Use Value: Low Q_g (30 nC) minimizes gate drive loss; 194 mJ E_AS tolerates transient overvoltage during resonant reset.	Use Scenario: 2–5 kW domestic induction cooktop using asymmetrical half-bridge topology. IC Role / Device Role / Timing Role: High-side switch subjected to repetitive 20–50 kHz hard switching and high di/dt (>1 kA/μs). Use Value: 24 V/ns dV/dt immunity prevents spurious turn-on; rugged body diode sustains reverse recovery stress without failure.
Industrial Motor Drive Inverter	Welding Power Stage
Use Scenario: 3-phase 7.5 kW VFD for HVAC compressors with IGBT-like gate drive simplicity. IC Role / Device Role / Timing Role: Phase-leg low-side switch in 6-pack inverter module, conducting 10 A RMS with 150 °C junction temperature. Use Value: R_DS(on) = 0.6 Ω ensures <6 W conduction loss; 0.85 °C/W R_thJC maintains safe T_J with forced-air cooling.	Use Scenario: Constant-current DC welding output stage requiring high peak current and short-circuit robustness. IC Role / Device Role / Timing Role: Main power switch in inverter-based arc welder, cycling between 100% duty and short-circuit events. Use Value: Avalanche rating (194 mJ) absorbs energy during output short-circuit; 40 A I_SM supports 2× rated surge current.

Server SMPS Primary Switch

Induction Heating Half-Bridge

Use Scenario: High-efficiency 80 PLUS Titanium server PSU operating at 300–500 kHz with 380 V DC bus.

IC Role / Device Role / Timing Role: Main switch in LLC resonant converter primary leg, handling 10 A peak current at 400 V blocking.

Use Value: Low Q_g (30 nC) minimizes gate drive loss; 194 mJ E_AS tolerates transient overvoltage during resonant reset.

Use Scenario: 2–5 kW domestic induction cooktop using asymmetrical half-bridge topology.

IC Role / Device Role / Timing Role: High-side switch subjected to repetitive 20–50 kHz hard switching and high di/dt (>1 kA/μs).

Use Value: 24 V/ns dV/dt immunity prevents spurious turn-on; rugged body diode sustains reverse recovery stress without failure.

Industrial Motor Drive Inverter

Welding Power Stage

Use Scenario: 3-phase 7.5 kW VFD for HVAC compressors with IGBT-like gate drive simplicity.

IC Role / Device Role / Timing Role: Phase-leg low-side switch in 6-pack inverter module, conducting 10 A RMS with 150 °C junction temperature.

Use Value: R_DS(on) = 0.6 Ω ensures <6 W conduction loss; 0.85 °C/W R_thJC maintains safe T_J with forced-air cooling.

Use Scenario: Constant-current DC welding output stage requiring high peak current and short-circuit robustness.

IC Role / Device Role / Timing Role: Main power switch in inverter-based arc welder, cycling between 100% duty and short-circuit events.

Use Value: Avalanche rating (194 mJ) absorbs energy during output short-circuit; 40 A I_SM supports 2× rated surge current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK40ZFP	R_DS(on) = 0.65 Ω, Q_g = 32 nC, E_AS = 170 mJ, same TO-220FP package	Lower avalanche energy; slightly higher conduction loss; identical pinout	Acceptable where 170 mJ E_AS suffices and layout re-use is critical
IRFP460LC	R_DS(on) = 0.27 Ω, Q_g = 140 nC, V_DS = 500 V, TO-247 package	Higher voltage rating but larger footprint and slower switching due to high Q_g	Preferred only when 500 V rating or lower R_DS(on) outweighs gate drive complexity and board space cost

Compared with STP10NK40ZFP and IRFP460LC, the SIHP10N40D-E3 offers the best balance of 400 V capability, 30 nC gate charge, and 194 mJ avalanche robustness in TO-220AB - making it optimal for cost-sensitive, thermally constrained 100–300 W industrial power stages where fast switching and reliability are prioritized over ultra-low R_DS(on).

Availability

SIHP10N40D-E3 is available at Aetrix Electronics and suitable for server SMPS, induction heating systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHP10N40D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The SIHP10N40D-E3 belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage switching applications demanding low R_DS(on) × Q_g, rugged avalanche performance, and proven thermal stability in continuous-duty industrial environments.

FAQ

What is the maximum continuous drain current for SIHP10N40D-E3 at 100 °C case temperature?

The SIHP10N40D-E3 supports 6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package; operation above this current requires active cooling or reduced ambient temperature to maintain T_J ≤ 150 °C. The SIHP10N40D-E3 datasheet confirms this value under standard test conditions with no additional derating factors applied.

Does SIHP10N40D-E3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHP10N40D-E3 is fully rated for single-pulse avalanche energy (E_AS) at 194 mJ, tested per JEDEC JESD24-11 with V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, and I_AS = 13 A. This rating is validated across production lots and applies to the exact SIHP10N40D-E3 device - not extrapolated from similar parts. The SIHP10N40D-E3 datasheet specifies this value in the Absolute Maximum Ratings section with explicit test conditions.

What is the gate threshold voltage range for SIHP10N40D-E3, and how does it affect drive circuit design?

The SIHP10N40D-E3 has a gate threshold voltage (V_GS(th)) range of 3–5 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction near 0 V. This range allows compatibility with both microcontroller GPIOs (with level-shifting) and dedicated gate drivers like the TC4427. The SIHP10N40D-E3's typical g_fs of 2.7 S provides predictable transconductance for analog control loops.

Can SIHP10N40D-E3 be used in synchronous rectification applications?

No - the SIHP10N40D-E3 is not optimized for synchronous rectification due to its relatively high R_DS(on) (0.6 Ω) and body diode recovery characteristics (t_rr = 230 ns, Q_rr = 1.6 μC), which increase switching loss in low-voltage, high-frequency secondary-side applications. It is designed for primary-side switching in 400 V systems. For synchronous rectification, dedicated low-V_DS, low-Q_rr MOSFETs such as SiR872DP should be selected instead of the SIHP10N40D-E3.

Is SIHP10N40D-E3 RoHS-compliant and halogen-free?

The SIHP10N40D-E3 is RoHS-compliant (lead-free) but not halogen-free; the "-E3" suffix denotes lead-free termination only. For halogen-free compliance, the variant SIHP10N40D-GE3 must be used. Both variants share identical electrical specifications and TO-220AB packaging. The SIHP10N40D-E3 datasheet explicitly states this distinction in the Ordering Information section and references Vishay document 99912 for material categorization details.

SIHP10N40D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 526 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP10N40D-E3 FAQ

1.How can I place an order for SIHP10N40D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP10N40D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP10N40D-E3 reliable?

The price and inventory of SIHP10N40D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP10N40D-E3 is usually 5 days.

3.What payment methods are accepted for SIHP10N40D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP10N40D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP10N40D-E3?

SIHP10N40D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP10N40D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP10N40D-E3?

For technical support, including SIHP10N40D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP10N40D-E3 requirements.

6.How does Aetrix verify that SIHP10N40D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP10N40D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP10N40D-E3 meets industry standards.

7.What is the process for return or replacement of SIHP10N40D-E3?

All SIHP10N40D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP10N40D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP10N40D-E3 part is unused and in its original packaging.

Return procedure for SIHP10N40D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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