Vishay Siliconix SIHP10N40D-GE3

Overview

SIHP10N40D-GE3 from Vishay Siliconix is a 400 V, 10 A N-channel enhancement-mode power MOSFET in TO-220AB package, with R_DS(on) = 0.6 Ω @ V_GS = 10 V, Q_g = 30 nC, and E_AS = 194 mJ. It serves as a high-voltage switching element in offline SMPS, motor drives, and induction heating circuits where rugged unclamped inductive switching is required.

For engineers reviewing the SIHP10N40D-GE3 datasheet, SIHP10N40D-GE3 pinout, SIHP10N40D-GE3 application, or SIHP10N40D-GE3 equivalent, key selection criteria include its 400 V V_DS, 0.6 Ω on-resistance at 10 V gate drive, 30 nC total gate charge, avalanche energy rating, and TO-220AB thermal performance (R_thJC = 0.85 °C/W).

Technical Context

This device uses planar VDMOS technology optimized for high-voltage switching with low C_iss (526 pF) and fast switching (t_d(on) = 24 ns max, t_f = 28 ns max). Its body diode exhibits t_rr = 230 ns and Q_rr = 1.6 μC at I_F = 5 A, supporting hard-switched flyback and resonant topologies.

The MOSFET features a gate threshold voltage of 3–5 V, ±30 V gate-source rating, and is rated for operation from –55 °C to +150 °C. Its dV/dt immunity is specified at 24 V/ns (T_J = 125 °C), enabling stable operation in noisy high-dv/dt environments typical of industrial inverters.

Key Specifications

Pinout & Package

SIHP10N40D-GE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and heatsinking. The package meets JEDEC TO-220 outline with 14.33–15.85 mm length, 9.96–10.52 mm width, and 13.36–14.40 mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP10NK40ZFP and IRFP460LC, SIHP10N40D-GE3 offers the best balance of avalanche ruggedness (194 mJ), low gate charge (30 nC), and isolated TO-220AB packaging-making it optimal for cost-sensitive, thermally demanding 400 V industrial power stages where layout simplicity and reliability are prioritized over raw current headroom.

Availability

SIHP10N40D-GE3 is available at Aetrix Electronics and suitable for server SMPS, induction heating systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.

Supply support for SIHP10N40D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The D Series Power MOSFETs-including SIHP10N40D-GE3-are engineered for high-voltage industrial switching applications demanding high avalanche energy, low gate charge, and stable parametric performance across temperature.

FAQ

What is the maximum continuous drain current for SIHP10N40D-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHP10N40D-GE3 is 6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and must be validated against actual PCB layout, airflow, and ambient temperature. SIHP10N40D-GE3 maintains safe operation up to 150 °C junction temperature, with linear derating beyond 100 °C case.

Is SIHP10N40D-GE3 suitable for logic-level gate drive?

No, SIHP10N40D-GE3 is not a logic-level MOSFET. Its gate threshold voltage is 3–5 V, and it requires 10 V gate drive to achieve R_DS(on) ≤ 0.6 Ω. Driving SIHP10N40D-GE3 with 3.3 V or 5 V logic will result in incomplete turn-on and excessive conduction loss. SIHP10N40D-GE3 must be used with a dedicated gate driver capable of sourcing/sinking ≥1 A peak current at 10 V.

Does SIHP10N40D-GE3 have an isolated drain tab?

Yes, SIHP10N40D-GE3 in TO-220AB package features an electrically isolated drain tab, confirmed in Vishay's package drawing 66542 and datasheet footnote. This allows direct mounting to a grounded heatsink without additional insulation, simplifying thermal design and reducing system cost. The isolation rating is sufficient for 400 V applications when mounted per JEDEC standards.

What is the reverse recovery charge (Q_rr) of the body diode in SIHP10N40D-GE3?

The reverse recovery charge (Q_rr) of the integral body diode in SIHP10N40D-GE3 is 1.6 μC, measured at T_J = 25 °C, I_F = 5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value directly impacts switching loss and voltage overshoot during commutation. SIHP10N40D-GE3's Q_rr is optimized for hard-switched topologies where body diode conduction occurs during dead-time intervals.

Can SIHP10N40D-GE3 replace SIHP10N40D-E3 in a design?

Yes, SIHP10N40D-GE3 can directly replace SIHP10N40D-E3. Both share identical electrical specifications, TO-220AB package, and 400 V/10 A rating. The "-GE3" suffix denotes lead-free and halogen-free construction per JEDEC J-STD-020, whereas "-E3" is lead-free only. No layout, thermal, or drive circuit changes are needed-SIHP10N40D-GE3 is a drop-in compliant upgrade for RoHS+halogen-free requirements.