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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP11N80AE-GE3

Name: SIHP11N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHP11N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP11N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP11N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 8A TO220AB

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Product details

Overview

SIHP11N80AE-GE3 from Vishay Siliconix is an 800 V, 8 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.391 Ω (typ.) at V_GS = 10 V, Q_g = 28 nC (typ.), and E_AS = 88 mJ - optimized for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP11N80AE-GE3 datasheet, SIHP11N80AE-GE3 pinout, SIHP11N80AE-GE3 application, or SIHP11N80AE-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 1.6 °C/W), avalanche rating, body diode recovery characteristics (t_rr = 278 ns), and real-world design implications for SMPS and industrial motor drive layouts.

Technical Context

This device uses planar stripe silicon technology with integrated Zener-protected gate to support robust 800 V blocking and fast switching in hard-switched topologies. Its low C_iss (804 pF) and ultra-low Q_gd/Q_g ratio (12/28 nC) reduce Miller-induced turn-off delay and improve dv/dt immunity up to 70 V/ns at T_J = 125 °C.

The MOSFET's body diode is rated for continuous 8 A and pulsed 22 A conduction, with t_rr = 278 ns and Q_rr = 2.9 μC under standardized 100 A/μs di/dt conditions - enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback converters without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus systems with 100 % margin against transients
R_DS(on) typ	0.391 Ω @ 10 V - enables <1.2 W conduction loss at 5.5 A, critical for thermally constrained PFC designs
Q_g max	42 nC - defines minimum gate driver current requirement (~1.7 A peak for 25 ns rise time)
E_AS	88 mJ - allows unclamped inductive switching without failure in welder or motor drive fault events
t_r/t_f	15/27 ns - enables >500 kHz operation with minimal switching loss in resonant LLC converters
R_thJC	1.6 °C/W - permits 78 W dissipation with ≤125 °C junction rise over case, supporting forced-air-cooled server PSUs
V_SD	1.2 V @ 5.5 A - limits reverse conduction loss in synchronous rectification or bidirectional topologies

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.6 mm creepage/clearance per IEC 60664-1. Pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control electrode	Accepts 0–10 V logic-level drive; requires ≥1.5 Ω series gate resistor to damp ringing from 0.7–3 Ω intrinsic R_g
Drain (Pin 2 / Tab)	High-voltage power terminal	Electrically connected to metal tab; must be insulated from heatsink unless system ground-referenced
Source (Pin 3)	Reference node for gate drive	Serves as return path for load current and gate drive loop; layout must minimize inductance to suppress V_GS oscillation

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	11.0 Ω·nC - reduces combined conduction + switching loss better than legacy 800 V MOSFETs by >25 %
Avalanche-rated (UIS)	88 mJ single-pulse - eliminates need for external clamping in inductive load switching circuits
Zener-protected gate	±30 V V_GS rating with integrated ESD diode - prevents gate oxide rupture during handling or transient coupling
Low C_oss (34 pF)	Reduces capacitive turn-on loss and improves light-load efficiency in high-frequency SMPS
Body diode t_rr = 278 ns	Enables clean commutation in quasi-resonant flyback and active clamp forward converters

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with 380–400 V DC input. IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward or LLC resonant topology. Use Value: 800 V rating accommodates 100 % hold-up time margin; low Q_g enables efficient 300–600 kHz operation with minimal driver loss.	Use Scenario: Input-stage switching in -48 V telecom rectifiers with universal AC input and PFC front-end. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller stage. Use Value: R_DS(on) = 0.391 Ω minimizes conduction loss at 8 A peak; avalanche rating handles line surge without snubber.
Industrial Motor Drive	Renewable Energy Inverter
Use Scenario: Half-bridge leg in 3-phase BLDC drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery for freewheeling. Use Value: t_rr = 278 ns and Q_rr = 2.9 μC prevent shoot-through and reduce EMI during commutation.	Use Scenario: DC-link switching in solar microinverters and battery storage DC/AC stages. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge or transformerless inverter legs. Use Value: 150 °C T_J rating supports sealed outdoor enclosures; R_thJC = 1.6 °C/W simplifies heatsink sizing.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with 380–400 V DC input.

IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward or LLC resonant topology.

Use Value: 800 V rating accommodates 100 % hold-up time margin; low Q_g enables efficient 300–600 kHz operation with minimal driver loss.

Use Scenario: Input-stage switching in -48 V telecom rectifiers with universal AC input and PFC front-end.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller stage.

Use Value: R_DS(on) = 0.391 Ω minimizes conduction loss at 8 A peak; avalanche rating handles line surge without snubber.

Industrial Motor Drive

Renewable Energy Inverter

Use Scenario: Half-bridge leg in 3-phase BLDC drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery for freewheeling.

Use Value: t_rr = 278 ns and Q_rr = 2.9 μC prevent shoot-through and reduce EMI during commutation.

Use Scenario: DC-link switching in solar microinverters and battery storage DC/AC stages.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge or transformerless inverter legs.

Use Value: 150 °C T_J rating supports sealed outdoor enclosures; R_thJC = 1.6 °C/W simplifies heatsink sizing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 0.52 Ω, Q_g = 32 nC, no avalanche rating	Lacks UIS qualification; higher conduction loss at same current	Prefer SIHP11N80AE-GE3 where unclamped inductive energy must be absorbed
IXTH11N80L2	800 V, 11 A, R_DS(on) = 0.42 Ω, Q_g = 48 nC, TO-247 package	Larger footprint, higher gate charge, but higher current rating	Choose SIHP11N80AE-GE3 for TO-220AB space constraints and lower switching loss

Compared with STP8NK80ZFP and IXTH11N80L2, SIHP11N80AE-GE3 delivers superior figure-of-merit (11.0 vs. 16.6 and 20.2 Ω·nC), certified avalanche capability, and TO-220AB compatibility - making it optimal for compact, high-reliability 800 V SMPS where layout area and fault robustness are critical.

Availability

SIHP11N80AE-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP11N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The SIHP11N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in telecom, server, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHP11N80AE-GE3 at 100 °C case temperature?

The SIHP11N80AE-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, derated linearly from 8 A at 25 °C using a factor of 0.6 W/°C. This reflects thermal limitations of the TO-220AB package and ensures safe operation within its R_thJC = 1.6 °C/W specification. Engineers must verify heatsink design to maintain T_C ≤ 100 °C under full load for sustained reliability of the SIHP11N80AE-GE3.

Does SIHP11N80AE-GE3 include integrated ESD protection?

Yes, the SIHP11N80AE-GE3 integrates a Zener diode for gate-source ESD protection, enabling a ±30 V gate-source voltage rating and safeguarding against electrostatic discharge during handling and PCB assembly. This feature eliminates the need for external gate protection components in most applications and is confirmed in the "Features" section of the Vishay datasheet S19-0956-Rev. A. The SIHP11N80AE-GE3 leverages this protection to meet industry-standard HBM requirements without external circuitry.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP11N80AE-GE3?

The SIHP11N80AE-GE3 body diode has a typical reverse recovery time (t_rr) of 278 ns under test conditions of T_J = 25 °C, I_F = 5.5 A, di/dt = 100 A/μs, and V_R = 25 V. This value is specified in the "Drain-Source Body Diode Characteristics" table and directly impacts commutation losses and EMI in hard-switched topologies. Designers should use this t_rr to size snubbers or select complementary switches when using the SIHP11N80AE-GE3 in bidirectional or freewheeling configurations.

Is SIHP11N80AE-GE3 suitable for use in PFC boost stages?

Yes, the SIHP11N80AE-GE3 is explicitly recommended for power factor correction (PFC) power supplies in its official applications list. Its 800 V V_DS, low R_DS(on) (0.391 Ω), and low Q_g (28 nC) make it well-suited for continuous conduction mode (CCM) boost converters operating from universal AC input. The SIHP11N80AE-GE3 also withstands line surges via its 88 mJ avalanche rating, reducing reliance on external clamping networks in demanding PFC designs.

What is the thermal resistance from junction to case (R_thJC) for SIHP11N80AE-GE3?

The SIHP11N80AE-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 1.6 °C/W, as stated in the "Thermal Resistance Ratings" table. This low value enables efficient heat transfer from the die to the heatsink through the TO-220AB drain tab. When designing thermal management, engineers should use this R_thJC along with the ambient-to-case path to calculate total thermal impedance and ensure T_J remains below 150 °C under worst-case power dissipation for the SIHP11N80AE-GE3.

SIHP11N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP11N80AE-GE3 FAQ

1.How can I place an order for SIHP11N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP11N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP11N80AE-GE3 reliable?

The price and inventory of SIHP11N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP11N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP11N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP11N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP11N80AE-GE3?

SIHP11N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP11N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP11N80AE-GE3?

For technical support, including SIHP11N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP11N80AE-GE3 requirements.

6.How does Aetrix verify that SIHP11N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP11N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP11N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP11N80AE-GE3?

All SIHP11N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP11N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP11N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHP11N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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