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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP11N80E-BE3

Name: SIHP11N80E-BE3
Brand: Vishay Siliconix
SKU: SIHP11N80E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP11N80E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP11N80E-BE3.pdf

Description:: N-CHANNEL 800V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP11N80E-BE3 from Vishay Siliconix is an 800 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.38 Ω R_DS(on) at V_GS = 10 V, 88 nC total gate charge, and 226 mJ single-pulse avalanche energy - designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP11N80E-BE3 datasheet, SIHP11N80E-BE3 pinout, SIHP11N80E-BE3 application, or SIHP11N80E-BE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-220AB thermal performance (R_thJC = 0.7 °C/W).

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (1670 pF) and ultra-low Q_gd (16 nC) reduce switching losses, while the integral body diode supports synchronous rectification and inductive flyback in SMPS topologies.

The device is characterized for operation up to T_J = 150 °C with a positive V_DS temperature coefficient (1.1 V/°C), enabling current sharing in parallel configurations. Avalanche rating per JEDEC JESD24-11 ensures robustness under unclamped inductive switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus PFC and 380 V telecom rectified inputs
R_DS(on) typ	0.38 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 5.5 A continuous drain current
Q_g max	88 nC - determines gate drive power requirement and switching speed in 100–500 kHz converters
E_AS	226 mJ - withstands unclamped inductive energy without failure in boost or LLC resonant circuits
R_thJC	0.7 °C/W - allows 179 W power dissipation with ≤125 °C case-to-ambient ΔT under heatsink mounting
C_iss	1670 pF - sets Miller capacitance impact on turn-on delay and dV/dt immunity in high-side configurations
V_GS(th)	2–4 V - ensures reliable enhancement-mode turn-on with standard 10 V gate drivers, not logic-level compatible

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.6 mm creepage distance from lead to tab. Thermal pad soldered directly to PCB copper for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V drive signal; requires ≥1 A peak current capability due to 88 nC Q_g
D (Drain)	High-voltage output terminal	Connected to heatsink via isolated tab; carries full switched current and withstands 800 V transients
S (Source)	Reference node / return path	Serves as local ground reference for gate driver; carries 12 A continuous current and reverse diode recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	33.4 Ω·nC - reduces combined conduction + switching losses in high-frequency PFC designs
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external snubbers in boost converter inductor flyback
Low C_iss and C_rss	1670 pF input / 9 pF reverse transfer - improves dV/dt immunity and reduces Miller-induced false turn-on
Enhanced body diode	345 ns trr, 4.2 μC Q_rr - minimizes reverse recovery losses in quasi-resonant and ZVS topologies
Pb-free and halogen-free	RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow assembly

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >94% efficiency. IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC input, operating at 100–300 kHz with zero-voltage switching. Use Value: 800 V rating provides 20% margin over 400 V bus; 0.38 Ω R_DS(on) limits conduction loss to <1.2 W at full load.	Use Scenario: Boost PFC stage in 48 V telecom rectifier converting 230 V AC to 400 V DC with THD <5%. IC Role / Device Role / Timing Role: Fast-switching MOSFET controlling inductor current in continuous conduction mode (CCM) at 65–100 kHz. Use Value: Low Q_g (44–88 nC) enables efficient gate driving; 226 mJ E_AS absorbs inductive kick during line dips.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string inverter H-bridge stage converting 600–1000 V DC to 230 V AC grid. IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase inverter leg, supporting 16 kHz PWM with soft switching. Use Value: 800 V V_DS accommodates 1000 V DC-link transients; 150 °C T_J rating sustains operation in enclosed outdoor enclosures.	Use Scenario: IGBT replacement in 3–7.5 kW variable frequency drive output stage for HVAC compressors. IC Role / Device Role / Timing Role: Hard-switched power switch in 2–8 kHz inverter output, managing motor phase current and regeneration energy. Use Value: Avalanche ruggedness handles motor inductive kickback; TO-220AB package simplifies heatsink integration in compact VFD chassis.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >94% efficiency.

IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC input, operating at 100–300 kHz with zero-voltage switching.

Use Value: 800 V rating provides 20% margin over 400 V bus; 0.38 Ω R_DS(on) limits conduction loss to <1.2 W at full load.

Use Scenario: Boost PFC stage in 48 V telecom rectifier converting 230 V AC to 400 V DC with THD <5%.

IC Role / Device Role / Timing Role: Fast-switching MOSFET controlling inductor current in continuous conduction mode (CCM) at 65–100 kHz.

Use Value: Low Q_g (44–88 nC) enables efficient gate driving; 226 mJ E_AS absorbs inductive kick during line dips.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string inverter H-bridge stage converting 600–1000 V DC to 230 V AC grid.

IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase inverter leg, supporting 16 kHz PWM with soft switching.

Use Value: 800 V V_DS accommodates 1000 V DC-link transients; 150 °C T_J rating sustains operation in enclosed outdoor enclosures.

Use Scenario: IGBT replacement in 3–7.5 kW variable frequency drive output stage for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched power switch in 2–8 kHz inverter output, managing motor phase current and regeneration energy.

Use Value: Avalanche ruggedness handles motor inductive kickback; TO-220AB package simplifies heatsink integration in compact VFD chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK80ZFP	800 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 95 nC, TO-220FP package (shorter leads, no isolated tab)	Lacks isolated drain tab; requires insulating washer for heatsink mounting; higher Q_g increases gate drive loss	Prefer SIHP11N80E-BE3 when direct drain-to-heatsink thermal path is required or when lower Q_g is critical for efficiency.
IXTH12N80L2	800 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 72 nC, TO-247AC package (higher R_thJC = 0.55 °C/W but larger footprint)	Superior thermal resistance but larger board area; optimized for higher-current paralleling with lower C_oss	Choose SIHP11N80E-BE3 for space-constrained TO-220 layouts where 0.7 °C/W R_thJC suffices and cost-sensitive volume production is prioritized.

Compared with STP12NK80ZFP and IXTH12N80L2, the SIHP11N80E-BE3 delivers identical voltage/current ratings and R_DS(on) in a thermally optimized TO-220AB package with the lowest Q_g among the three - making it ideal for high-efficiency, medium-power SMPS where gate drive simplicity and thermal interface reliability are critical.

Availability

SIHP11N80E-BE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP11N80E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHP11N80E-BE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching efficiency and ruggedness in hard-switched power conversion systems operating up to 150 °C junction temperature.

FAQ

What is the maximum continuous drain current rating for SIHP11N80E-BE3 at 100 °C case temperature?

The SIHP11N80E-BE3 supports 8 A continuous drain current at T_C = 100 °C, derated linearly from 12 A at 25 °C using the 1.4 W/°C derating factor. This reflects real-world thermal constraints in forced-air or heatsink-mounted applications where case temperature exceeds ambient. The SIHP11N80E-BE3 datasheet specifies this limit under steady-state conduction with proper PCB copper area and thermal interface material.

Does SIHP11N80E-BE3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHP11N80E-BE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 226 mJ at T_J = 25 °C, tested per JEDEC JESD24-11 using L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A. This rating ensures robustness against inductive energy spikes in boost, flyback, and resonant converters without external protection. The SIHP11N80E-BE3 maintains this specification across its qualified manufacturing locations.

Is SIHP11N80E-BE3 compatible with standard 10 V gate drivers, and what is its gate threshold range?

Yes, the SIHP11N80E-BE3 is designed for standard 10 V gate drivers, with a guaranteed V_GS(th) range of 2–4 V at I_D = 250 μA. It is not a logic-level MOSFET and requires ≥8 V to achieve full R_DS(on) specification. The SIHP11N80E-BE3 gate leakage remains below ±100 nA at ±20 V, ensuring minimal drive current loss in high-impedance control circuits.

What is the thermal resistance from junction to case (R_thJC) for SIHP11N80E-BE3, and how does it impact heatsink design?

The SIHP11N80E-BE3 has a maximum R_thJC of 0.7 °C/W, measured from junction to the TO-220AB drain tab. This low value enables efficient heat transfer to external heatsinks, allowing 179 W power dissipation at ΔT = 125 °C. When designing heatsinks, engineers must account for thermal interface resistance and ensure mechanical clamping force maintains low contact resistance to the isolated drain tab - a key advantage of the SIHP11N80E-BE3 over non-isolated packages.

How does the body diode performance of SIHP11N80E-BE3 compare to standard fast recovery diodes in PFC applications?

The SIHP11N80E-BE3 body diode features t_rr = 345–690 ns and Q_rr = 4.2–8.4 μC at T_J = 25 °C, significantly faster than standard FRDs in same voltage class. This reduces reverse recovery losses by up to 30% in critical conduction mode (CRM) PFC. The SIHP11N80E-BE3 body diode forward voltage is 1.2 V at I_S = 5.5 A, balancing conduction and switching trade-offs in high-frequency topologies.

SIHP11N80E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 440mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1670 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP11N80E-BE3 FAQ

1.How can I place an order for SIHP11N80E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP11N80E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP11N80E-BE3 reliable?

The price and inventory of SIHP11N80E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP11N80E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP11N80E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP11N80E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP11N80E-BE3?

SIHP11N80E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP11N80E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP11N80E-BE3?

For technical support, including SIHP11N80E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP11N80E-BE3 requirements.

6.How does Aetrix verify that SIHP11N80E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP11N80E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP11N80E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP11N80E-BE3?

All SIHP11N80E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP11N80E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP11N80E-BE3 part is unused and in its original packaging.

Return procedure for SIHP11N80E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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