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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP11N80E-GE3

Name: SIHP11N80E-GE3
Brand: Vishay Siliconix
SKU: SIHP11N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP11N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP11N80E-GE3.pdf

Description:: MOSFET N-CH 800V 12A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP11N80E-GE3 from Vishay Siliconix is an 800 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.38 Ω R_DS(on) at V_GS = 10 V, 88 nC total gate charge, and 226 mJ single-pulse avalanche energy-designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHP11N80E-GE3 datasheet, SIHP11N80E-GE3 pinout, SIHP11N80E-GE3 application, or SIHP11N80E-GE3 equivalent, key selection criteria include its 800 V V_DS, low Q_g/R_DS(on) figure-of-merit, UIS-rated ruggedness, and TO-220AB thermal performance (R_thJC = 0.7 °C/W) in high-reliability industrial power converters.

Technical Context

This device operates as a high-voltage, medium-current switching element with gate threshold voltage of 2–4 V and zero-gate-voltage drain leakage ≤1 μA at 800 V. Its dynamic parameters-C_iss = 1670 pF, C_oss = 68 pF, and C_rss = 9 pF-support fast, low-loss hard-switching in 480 V bus applications.

The integrated body diode delivers 12 A continuous source-drain current with V_SD = 1.2 V at 5.5 A and t_rr = 345–690 ns under dI/dt = 100 A/μs, enabling reliable freewheeling in bridge topologies without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input rectified to 560 V DC bus with 43 % margin for surge and ringing
R_DS(on) typ	0.38 Ω at V_GS = 10 V - enables <1.2 W conduction loss at 5.5 A, reducing heatsink requirements
Q_g max	88 nC - allows efficient gate drive with standard 1 A peak drivers at 100 kHz switching
E_AS	226 mJ - withstands unclamped inductive switching events in motor drives and SMPS without failure
R_thJC	0.7 °C/W - enables 179 W power dissipation with <125 °C junction rise over case at steady state
I_D cont	12 A at T_C = 25 °C - rated for continuous operation in forced-air-cooled 1–2 kW PFC stages
V_GS(th)	2–4 V - ensures clean turn-on with standard 10 V gate drivers and avoids spurious activation

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 0.7 °C/W junction-to-case thermal resistance, and JEDEC-standard footprint compatible with manual or wave soldering per 300 °C/10 s profile.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; requires <88 nC charge for full turn-on
D (Drain)	High-side power output	Connected to high-voltage DC bus (up to 800 V); electrically tied to metal tab for thermal path
S (Source)	Power return / reference	Serves as common return for load current and gate driver ground; defines V_GS reference point

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	33.4 Ω·nC - reduces combined switching + conduction losses in high-frequency PFC designs
Avalanche-rated (UIS)	226 mJ single-pulse rating - eliminates need for external snubbers in inductive load switching
Low C_iss and C_rss	1670 pF input capacitance and 9 pF reverse transfer capacitance - minimize Miller effect and improve EMI behavior
Enhanced body diode	t_rr = 345 ns typical with soft recovery - reduces voltage overshoot and diode switching loss in LLC resonant converters

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1U 2 kW AC/DC front-end modules with active PFC and LLC resonant conversion. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC stage operating at 65–100 kHz. Use Value: 0.38 Ω R_DS(on) and 88 nC Q_g enable >96 % efficiency at full load while maintaining <105 °C junction temperature.	Use Scenario: Output rectification and isolation in -48 V telecom rectifier systems with 380 V DC intermediate bus. IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side synchronous buck converter with 200–500 kHz switching. Use Value: Low C_oss (68 pF) and fast body diode (t_rr = 345 ns) reduce dead-time losses and improve light-load regulation.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-phase inverter leg with 16 kHz PWM modulation. Use Value: 800 V V_DS rating and 226 mJ E_AS ensure robustness against DC bus transients during islanding detection faults.	Use Scenario: Brake chopper and DC link switching in 3–7.5 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Energy-dump switch activated during regenerative braking to dissipate excess bus energy into braking resistor. Use Value: 32 A pulsed drain current rating and 179 W power dissipation support 10 s intermittent 5 kW braking pulses without thermal runaway.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1U 2 kW AC/DC front-end modules with active PFC and LLC resonant conversion.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC stage operating at 65–100 kHz.

Use Value: 0.38 Ω R_DS(on) and 88 nC Q_g enable >96 % efficiency at full load while maintaining <105 °C junction temperature.

Use Scenario: Output rectification and isolation in -48 V telecom rectifier systems with 380 V DC intermediate bus.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side synchronous buck converter with 200–500 kHz switching.

Use Value: Low C_oss (68 pF) and fast body diode (t_rr = 345 ns) reduce dead-time losses and improve light-load regulation.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-phase inverter leg with 16 kHz PWM modulation.

Use Value: 800 V V_DS rating and 226 mJ E_AS ensure robustness against DC bus transients during islanding detection faults.

Use Scenario: Brake chopper and DC link switching in 3–7.5 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Energy-dump switch activated during regenerative braking to dissipate excess bus energy into braking resistor.

Use Value: 32 A pulsed drain current rating and 179 W power dissipation support 10 s intermittent 5 kW braking pulses without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK80ZFP	800 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 95 nC, TO-220FP package (full-pack)	Higher Q_g increases gate drive loss; lower R_thJC (0.85 °C/W) limits power handling vs. SIHP11N80E-GE3	Prefer SIHP11N80E-GE3 for higher efficiency in thermally constrained PFC designs
IXTH12N80L2	800 V, 12 A, R_DS(on) = 0.39 Ω, Q_g = 72 nC, TO-247AC package	Lower Q_g improves switching speed but TO-247 requires PCB rework; no avalanche rating specified	Choose SIHP11N80E-GE3 when avalanche ruggedness and TO-220AB compatibility are mandatory

Compared with STP12NK80ZFP and IXTH12N80L2, SIHP11N80E-GE3 offers superior thermal performance (R_thJC = 0.7 °C/W), certified UIS capability (226 mJ), and optimized FOM for high-frequency PFC-making it preferred where reliability under transient stress and board-space-constrained cooling are critical.

Availability

SIHP11N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and lead-free/halogen-free compliance.

Supply support for SIHP11N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHP11N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, high-efficiency switching in industrial and communications power systems where low R_DS(on) × Q_g and avalanche tolerance are essential.

FAQ

What is the maximum continuous drain current rating for SIHP11N80E-GE3 at 100 °C case temperature?

The SIHP11N80E-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, derated linearly from 12 A at 25 °C using a 1.4 W/°C factor. This reflects real-world thermal constraints in enclosed power supplies where case temperature exceeds ambient by significant margins, and must be verified with actual heatsink design and airflow conditions for the SIHP11N80E-GE3 installation.

Does SIHP11N80E-GE3 support logic-level gate drive?

No, SIHP11N80E-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2–4 V, but full enhancement requires V_GS = 10 V to achieve the specified 0.38 Ω R_DS(on). Driving the SIHP11N80E-GE3 with only 5 V may result in incomplete turn-on and excessive conduction loss-standard 10 V gate drivers are required for optimal SIHP11N80E-GE3 performance.

What is the significance of the "-GE3" suffix in SIHP11N80E-GE3?

The "-GE3" suffix indicates that the SIHP11N80E-GE3 is manufactured in a lead (Pb)-free and halogen-free process compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard. It denotes full environmental compliance without functional or electrical differentiation from non-suffixed versions-SIHP11N80E-GE3 maintains identical absolute maximum ratings and electrical specifications as the base part.

How is the avalanche energy rating of SIHP11N80E-GE3 validated?

The SIHP11N80E-GE3 is tested per JEDEC JESD24-1 for unclamped inductive switching (UIS), with a single-pulse avalanche energy rating of 226 mJ under defined conditions: V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.0 A, and starting T_J = 25 °C. This validated rating applies directly to the SIHP11N80E-GE3 and confirms its ability to absorb inductive energy without failure during fault events.

Can SIHP11N80E-GE3 replace older Vishay 800 V MOSFETs like SIHP12N80C in existing designs?

SIHP11N80E-GE3 is not a direct drop-in replacement for SIHP12N80C due to differences in gate charge (88 nC vs. 105 nC), output capacitance (C_oss = 68 pF vs. 90 pF), and thermal resistance (R_thJC = 0.7 °C/W vs. 0.85 °C/W). While both share TO-220AB packaging and 800 V rating, layout and gate drive tuning may be needed-design validation with the SIHP11N80E-GE3 is required before substitution.

SIHP11N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 440mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1670 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP11N80E-GE3 FAQ

1.How can I place an order for SIHP11N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP11N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP11N80E-GE3 reliable?

The price and inventory of SIHP11N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP11N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP11N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP11N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP11N80E-GE3?

SIHP11N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP11N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP11N80E-GE3?

For technical support, including SIHP11N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP11N80E-GE3 requirements.

6.How does Aetrix verify that SIHP11N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP11N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP11N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP11N80E-GE3?

All SIHP11N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP11N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP11N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHP11N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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