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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP120N60E-GE3

Name: SIHP120N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP120N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP120N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP120N60E-GE3.pdf

Description:: MOSFET N-CH 600V 25A TO220AB

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Product details

Overview

SIHP120N60E-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.104 Ω at V_GS = 10 V, Q_g = 30 nC (typ), and E_AS = 88 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHP120N60E-GE3 datasheet, SIHP120N60E-GE3 pinout, SIHP120N60E-GE3 application, or SIHP120N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, reduced C_oss(er) = 56 pF, and validated performance in 480 V DC bus switching at 12 A with 19 ns turn-on delay.

Technical Context

This 4th-generation E-series MOSFET employs planar silicon technology with optimized charge distribution to minimize conduction and switching losses simultaneously. Its low effective output capacitance (C_oss(er) = 56 pF) directly reduces turn-off energy loss during hard-switching transitions at high DC-link voltages.

The device integrates an intrinsic body diode with t_rr = 322 ns (typ) and Q_rr = 4.9 μC at I_F = 12 A, enabling reliable operation in continuous-conduction-mode PFC and ZVS resonant topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to 560 V DC bus with 10 % margin for transient overvoltage
R_DS(on) typ @ 10 V	0.104 Ω - enables ≤ 15.6 W conduction loss at 12 A continuous drain current
Q_g max	45 nC - determines gate drive power requirement and switching speed under 9.1 Ω R_g
E_AS	88 mJ - guarantees single-pulse unclamped inductive switching survival up to I_AS = 2.5 A
C_oss(er)	56 pF - lowers turn-off switching loss and improves efficiency in high-frequency SMPS above 100 kHz
t_r / t_f	65 / 33 ns (typ) - supports clean voltage transitions with minimal overlap loss in hard-switched converters
T_J range	–55 °C to +150 °C - qualified for industrial and telecom environments with derated ID at T_C > 100 °C

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 1.6 mm creepage distance from case per Vishay S18-0932-Rev. A.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires 30 nC Q_gs + Q_gd to fully enhance; R_g = 9.1 Ω used in datasheet switching tests
D (Drain)	Main current path output	Connected to high-side DC bus (up to 600 V); electrically tied to metal tab - requires isolation from heatsink unless floating design
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; body diode anode; must be low-inductance connection to minimize V_SD ringing during diode recovery

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.24 Ω·nC - reduces total switching + conduction loss tradeoff, critical for >95 % efficiency PFC designs
Avalanche energy rating	88 mJ single-pulse - eliminates need for external snubbers in inductive load switching and flyback transformer reset
Reduced C_oss(er)	56 pF - cuts stored output capacitance energy (E_oss) by ~40 % vs. prior generation, lowering turn-off loss
Body diode t_rr & Q_rr	322 ns / 4.9 μC - enables stable operation in continuous-conduction-mode boost PFC without cross-conduction risk
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay material categorization per doc# 99912

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 100–200 kHz with synchronous rectification on secondary side. Use Value: Low Q_g and C_oss(er) reduce gate drive loss and turn-off dissipation, enabling >94 % full-load efficiency at 60 °C ambient.	Use Scenario: Boost PFC stage in dual-input (AC + 48 V DC) server PSU supporting 80 PLUS Titanium certification. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode with interleaved control. Use Value: Tight R_DS(on) tolerance (0.104–0.120 Ω) and low Q_rr ensure consistent current sharing and minimal thermal runaway across parallel phases.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string-level 5 kW solar inverter using three-level NPC topology. IC Role / Device Role / Timing Role: Mid-rail switching device rated for 600 V blocking, conducting 25 A RMS with 10 kHz PWM modulation. Use Value: 150 °C T_J rating and robust UIS capability allow operation under partial shading-induced overcurrent transients without derating.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control. IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverter output stage, leveraging low conduction loss and fast body diode. Use Value: R_DS(on) = 0.104 Ω at 12 A delivers lower conduction loss than comparable 600 V IGBTs, reducing heatsink size by 30 %.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 100–200 kHz with synchronous rectification on secondary side.

Use Value: Low Q_g and C_oss(er) reduce gate drive loss and turn-off dissipation, enabling >94 % full-load efficiency at 60 °C ambient.

Use Scenario: Boost PFC stage in dual-input (AC + 48 V DC) server PSU supporting 80 PLUS Titanium certification.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode with interleaved control.

Use Value: Tight R_DS(on) tolerance (0.104–0.120 Ω) and low Q_rr ensure consistent current sharing and minimal thermal runaway across parallel phases.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string-level 5 kW solar inverter using three-level NPC topology.

IC Role / Device Role / Timing Role: Mid-rail switching device rated for 600 V blocking, conducting 25 A RMS with 10 kHz PWM modulation.

Use Value: 150 °C T_J rating and robust UIS capability allow operation under partial shading-induced overcurrent transients without derating.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control.

IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverter output stage, leveraging low conduction loss and fast body diode.

Use Value: R_DS(on) = 0.104 Ω at 12 A delivers lower conduction loss than comparable 600 V IGBTs, reducing heatsink size by 30 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12NK60Z	600 V, 12 A, R_DS(on) = 0.58 Ω, Q_g = 32 nC, TO-247 package	Lower current rating and higher R_DS(on); suited for <1 kW designs with less stringent thermal constraints	Choose STW12NK60Z only when board space allows TO-247 and peak current stays below 12 A.
IXFH12N60P	600 V, 12 A, R_DS(on) = 0.65 Ω, Q_g = 36 nC, TO-247 package, no UIS rating	No avalanche energy specification; higher conduction loss; requires external clamping for inductive loads	Select IXFH12N60P only in non-inductive or clamped topologies where UIS is not required.

Compared with STW12NK60Z and IXFH12N60P, SIHP120N60E-GE3 delivers 2× higher continuous current (25 A vs. 12 A), 5.6× lower R_DS(on), and guaranteed 88 mJ UIS - making it uniquely suitable for high-power, high-reliability 600 V SMPS where thermal density and fault robustness are critical.

Availability

SIHP120N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for SIHP120N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switch-mode power conversion in telecom, server, industrial, and renewable energy systems - engineered for low FOM, avalanche ruggedness, and thermally robust packaging.

FAQ

What is the maximum continuous drain current for SIHP120N60E-GE3 at 100 °C case temperature?

The SIHP120N60E-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package with R_thJC = 0.7 °C/W. At T_C = 25 °C, the rating increases to 25 A. Designers must verify junction temperature rise using actual PCB layout and heatsink conditions before finalizing thermal design for SIHP120N60E-GE3.

Does SIHP120N60E-GE3 have a specified avalanche energy rating?

Yes, SIHP120N60E-GE3 is rated for 88 mJ single-pulse unclamped inductive switching (UIS) energy at T_J = 25 °C, with test conditions V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.5 A. This rating confirms ruggedness against inductive turn-off transients and eliminates need for external snubbers in many hard-switched topologies - a key differentiator versus non-UIS-rated 600 V MOSFETs like IXFH12N60P.

What is the typical gate charge profile of SIHP120N60E-GE3 and how does it affect drive requirements?

The SIHP120N60E-GE3 has Q_g = 30 nC (typ), Q_gs = 10 nC, and Q_gd = 12 nC at V_DS = 480 V and I_D = 12 A. This profile indicates strong Miller effect immunity due to low Q_gd/Q_gs ratio (~1.2), allowing stable 10 V gate drive without negative voltage turn-off. Gate driver ICs must deliver ≥ 1.5 A peak current to achieve 20 ns rise time with 9.1 Ω R_g, as verified in the SIHP120N60E-GE3 datasheet switching waveforms.

How does the body diode performance of SIHP120N60E-GE3 compare to standard FRDs in PFC applications?

The SIHP120N60E-GE3 body diode exhibits t_rr = 322 ns (typ) and Q_rr = 4.9 μC at I_F = 12 A, which is slower and higher-Q_rr than dedicated fast recovery diodes but sufficient for continuous-conduction-mode boost PFC at ≤ 100 kHz. Its soft recovery characteristic minimizes EMI, and integrated co-packaging eliminates layout mismatch - making SIHP120N60E-GE3 viable for cost-sensitive, space-constrained PFC where discrete diode + MOSFET solutions add complexity.

Is SIHP120N60E-GE3 compatible with standard TO-220AB footprints and thermal pads?

Yes, SIHP120N60E-GE3 uses industry-standard TO-220AB mechanical dimensions and pinout (G-D-S), fully compatible with existing TO-220AB footprints, solder stencil apertures, and thermal pad layouts. The drain-connected tab requires electrical isolation from the heatsink unless the system design permits floating drain potential. Vishay's package drawing confirms compliance with JEDEC TO-220AB outline MO-012AA, ensuring drop-in manufacturability without PCB revision for SIHP120N60E-GE3.

SIHP120N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1562 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP120N60E-GE3 FAQ

1.How can I place an order for SIHP120N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP120N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP120N60E-GE3 reliable?

The price and inventory of SIHP120N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP120N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP120N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP120N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP120N60E-GE3?

SIHP120N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP120N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP120N60E-GE3?

For technical support, including SIHP120N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP120N60E-GE3 requirements.

6.How does Aetrix verify that SIHP120N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP120N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP120N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP120N60E-GE3?

All SIHP120N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP120N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP120N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP120N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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