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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP125N60EF-GE3

Name: SIHP125N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHP125N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP125N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP125N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 25A TO220AB

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Product details

Overview

SIHP125N60EF-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.109 Ω R_DS(on) at V_GS = 10 V, 47 nC total gate charge, and fast body diode with 117 ns reverse recovery time - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHP125N60EF-GE3 datasheet, SIHP125N60EF-GE3 pinout, SIHP125N60EF-GE3 application, or SIHP125N60EF-GE3 equivalent, this device is selected for high-voltage, medium-current switching where low conduction loss, controlled dv/dt immunity (70 V/ns), and avalanche-rated ruggedness (88 mJ E_AS) are critical in telecom and industrial power designs.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology, delivering low figure-of-merit (R_DS(on) × Q_g = 5.1 nΩ·F) and reduced effective output capacitance (C_oss(er) = 54 pF), enabling high-frequency operation with minimized switching losses. Its fast intrinsic body diode supports ZVS and resonant topologies without external antiparallel diodes.

The device is rated for repetitive unclamped inductive switching (UIS) up to 88 mJ and exhibits stable threshold voltage (3.0–5.0 V) and low gate leakage (<100 nA at ±20 V), supporting robust gate drive design across -55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing
R_DS(on) typ @ 25 °C	0.109 Ω - enables ≤3.2 W conduction loss at 12 A continuous drain current
Q_g max	47 nC - determines gate drive power requirement and switching speed in hard-switched converters
E_AS	88 mJ - ensures single-pulse avalanche ruggedness during overvoltage transients in PFC and SMPS
t_rr	117 ns - reduces diode recovery loss and EMI in bridge-leg and synchronous rectification applications
R_thJC	0.7 °C/W - allows 179 W power dissipation with <105 °C case-to-junction rise under heatsink cooling
dv/dt rating	70 V/ns - suppresses false turn-on in high-dV/dt environments like motor drives and inverters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting footprint (9.15 mm × 10.16 mm × 4.7 mm), screw-hole compatible for mechanical heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level gate drive; input capacitance C_iss = 1533 pF shapes drive strength requirements
D (Drain)	High-side power node	Connected to TO-220 tab; electrically isolated but thermally coupled - requires insulating pad when mounted to common heatsink
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	5.1 nΩ·F - balances conduction and switching loss for optimal efficiency at 100–300 kHz operation
Fast body diode (t_rr = 117 ns)	Enables use in half-bridge and LLC resonant converters without external diode, reducing BOM count and layout area
Avalanche energy rated (E_AS = 88 mJ)	Guarantees safe operation during inductive switching faults - eliminates need for external snubbers in many PFC designs
Low C_oss(er) (54 pF)	Reduces capacitive turn-off loss and improves light-load efficiency in high-frequency SMPS
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with active clamp or phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side main switch handling 25 A peak current at 100–200 kHz with tight thermal constraints. Use Value: Low R_DS(on) minimizes conduction loss in high-duty-cycle operation; fast body diode enables zero-voltage switching transitions.	Use Scenario: Boost PFC stage in 3 kW telecom rectifiers operating from 85–264 V AC input. IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost converter with 400 V DC output. Use Value: 600 V rating provides margin against line surges; 88 mJ E_AS withstands inductive kickback during fault conditions.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters' H-bridge output stage feeding grid-tied transformerless topologies. IC Role / Device Role / Timing Role: Medium-power IGBT replacement in 3–5 kW inverters requiring fast switching and low EMI. Use Value: 70 V/ns dv/dt rating prevents spurious turn-on from high-speed voltage transients; low Q_gd/Q_g ratio improves gate control stability.	Use Scenario: Inverter leg switching in 3-phase VFDs for HVAC compressors and pumps (0.75–2.2 kW). IC Role / Device Role / Timing Role: Half-bridge upper/lower switch managing 12–25 A motor phase current with PWM frequencies up to 16 kHz. Use Value: Fast body diode supports regenerative braking without external freewheeling diodes; R_thJC = 0.7 °C/W enables compact heatsink integration.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with active clamp or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side main switch handling 25 A peak current at 100–200 kHz with tight thermal constraints.

Use Value: Low R_DS(on) minimizes conduction loss in high-duty-cycle operation; fast body diode enables zero-voltage switching transitions.

Use Scenario: Boost PFC stage in 3 kW telecom rectifiers operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost converter with 400 V DC output.

Use Value: 600 V rating provides margin against line surges; 88 mJ E_AS withstands inductive kickback during fault conditions.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters' H-bridge output stage feeding grid-tied transformerless topologies.

IC Role / Device Role / Timing Role: Medium-power IGBT replacement in 3–5 kW inverters requiring fast switching and low EMI.

Use Value: 70 V/ns dv/dt rating prevents spurious turn-on from high-speed voltage transients; low Q_gd/Q_g ratio improves gate control stability.

Use Scenario: Inverter leg switching in 3-phase VFDs for HVAC compressors and pumps (0.75–2.2 kW).

IC Role / Device Role / Timing Role: Half-bridge upper/lower switch managing 12–25 A motor phase current with PWM frequencies up to 16 kHz.

Use Value: Fast body diode supports regenerative braking without external freewheeling diodes; R_thJC = 0.7 °C/W enables compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	600 V, 20 A, R_DS(on) = 0.33 Ω, Q_g = 32 nC, no specified E_AS rating	Higher conduction loss; suitable only for lower-current, lower-frequency (<60 kHz) applications	Prefer SIHP125N60EF-GE3 where >12 A continuous current or avalanche robustness is required
IXFH20N60P	600 V, 20 A, R_DS(on) = 0.30 Ω, Q_g = 52 nC, t_rr = 220 ns, E_AS = 120 mJ	Slower diode recovery increases switching loss; higher Q_g demands stronger gate driver	Choose IXFH20N60P only if higher avalanche margin outweighs efficiency penalty in infrequent fault scenarios

Compared with STW20NK60Z and IXFH20N60P, the SIHP125N60EF-GE3 delivers superior conduction efficiency at 12–25 A, faster diode recovery for high-frequency topologies, and verified 88 mJ UIS capability - making it optimal for space-constrained, high-efficiency server and telecom power stages.

Availability

SIHP125N60EF-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP125N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The SIHP125N60EF-GE3 belongs to Vishay's EF Series - engineered specifically for high-efficiency, high-reliability switch-mode power conversion in demanding industrial and communications infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHP125N60EF-GE3 at 100 °C case temperature?

The SIHP125N60EF-GE3 supports 16 A continuous drain current at T_C = 100 °C, derated linearly from 25 A at 25 °C using a 1.4 W/°C factor. This rating assumes proper heatsinking and ambient conditions per the R_thJC = 0.7 °C/W specification. The SIHP125N60EF-GE3 must not exceed its 150 °C maximum junction temperature under steady-state operation.

Does SIHP125N60EF-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, the SIHP125N60EF-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 88 mJ. Per datasheet note b, this is measured at V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.5 A. The SIHP125N60EF-GE3 is not rated for repetitive avalanche operation unless validated per application-specific stress testing.

What is the gate threshold voltage range for SIHP125N60EF-GE3, and how does it affect drive design?

The SIHP125N60EF-GE3 has a gate-source threshold voltage V_GS(th) of 3.0–5.0 V at T_J = 25 °C and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The SIHP125N60EF-GE3 requires ≥8 V V_GS to achieve near-minimum R_DS(on), and gate drive must sustain ≥10 V to maintain low on-resistance across temperature.

Can SIHP125N60EF-GE3 be used in place of logic-level MOSFETs in 5 V gate drive circuits?

No - the SIHP125N60EF-GE3 is not a logic-level device. Its V_GS(th) minimum is 3.0 V, but full enhancement requires ≥10 V to achieve rated R_DS(on) = 0.109 Ω. At 5 V V_GS, R_DS(on) rises significantly (>0.5 Ω), increasing conduction loss beyond acceptable limits. The SIHP125N60EF-GE3 must be driven with a dedicated 10–15 V gate driver, not microcontroller GPIO directly.

What is the thermal resistance from junction to case (R_thJC) for SIHP125N60EF-GE3, and why is it critical?

The SIHP125N60EF-GE3 has a maximum R_thJC of 0.7 °C/W, measured from junction to the TO-220AB drain tab. This low value enables high power dissipation (179 W at T_C = 25 °C) with minimal temperature rise - essential for compact, fanless power supplies. Accurate heatsink design must account for interface resistance between the SIHP125N60EF-GE3 tab and heatsink surface to avoid exceeding T_J(max) = 150 °C.

SIHP125N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1533 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP125N60EF-GE3 FAQ

1.How can I place an order for SIHP125N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP125N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP125N60EF-GE3 reliable?

The price and inventory of SIHP125N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP125N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP125N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP125N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP125N60EF-GE3?

SIHP125N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP125N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP125N60EF-GE3?

For technical support, including SIHP125N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP125N60EF-GE3 requirements.

6.How does Aetrix verify that SIHP125N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP125N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP125N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP125N60EF-GE3?

All SIHP125N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP125N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP125N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHP125N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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