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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP12N50C-E3

Name: SIHP12N50C-E3
Brand: Vishay Siliconix
SKU: SIHP12N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP12N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP12N50C-E3.pdf

Description:: MOSFET N-CH 500V 12A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP12N50C-E3 from Vishay Siliconix is a 500 V, 12 A N-channel power MOSFET in TO-220AB package, featuring R_DS(on) = 0.555 Ω at V_GS = 10 V, Q_g = 48 nC, and 100 % avalanche tested for ruggedness in hard-switching applications such as offline SMPS primary-side switching.

For engineers reviewing the SIHP12N50C-E3 datasheet, SIHP12N50C-E3 pinout, SIHP12N50C-E3 application, or SIHP12N50C-E3 equivalent, key selection criteria include its 500 V V_DS rating, low gate charge for high-frequency operation, thermal resistance of 0.6 °C/W (junction-to-case), unclamped inductive switching capability (E_AS = 180 mJ), and RoHS-compliant lead-free termination.

Technical Context

This device uses planar high-voltage silicon technology optimized for fast switching and robust avalanche performance. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers, while low Q_gd/Q_g ratio (15/48 nC) supports reduced Miller-induced switching losses.

The integrated body diode exhibits t_rr = 580 ns and Q_rr = 4.3 μC at T_J = 25 °C, enabling moderate-speed recovery in flyback and resonant topologies. Thermal design is supported by R_thJC = 0.6 °C/W and R_thJA = 40 °C/W (PCB mount), confirming suitability for thermally constrained board-level layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands full mains-referenced DC bus in universal-input 85–265 VAC SMPS
R_DS(on)	0.555 Ω @ V_GS = 10 V - Enables ≤ 67 W conduction loss at 12 A continuous drain current
Q_g	48 nC max - Requires ≥ 1 W gate driver peak power at 100 kHz switching with 10 V swing
E_AS	180 mJ - Supports single-pulse energy handling in 2.5 mH inductive load tests per JEDEC JESD24-11
t_rr	580 ns - Limits reverse recovery stress during hard commutation in non-synchronous converters
R_thJC	0.6 °C/W - Allows > 200 W power dissipation with 120 °C case temperature rise above ambient
I_D (T_C = 100 °C)	7.5 A - Defines practical continuous current limit under heatsink-limited thermal conditions

Pinout & Package

SIHP12N50C-E3 is housed in TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration, and RoHS-compliant matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts 0–10 V logic-level drive; requires external gate resistor to damp ringing and control dV/dt
D (Drain)	High-side power switch node	Connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential
S (Source)	Power return reference	Serves as local ground for gate drive loop; critical for minimizing common-source inductance in high-di/dt operation

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	26.5 Ω·nC - Balances conduction and switching loss for 65–130 kHz SMPS designs
100 % avalanche rated	Guaranteed E_AS = 180 mJ - Eliminates need for external snubbers in clamp-based topologies
Improved Q_gd/Q_g ratio	31 % - Reduces Miller plateau duration and improves controllability during turn-off
Body diode t_rr and Q_rr specified	t_rr = 580 ns, Q_rr = 4.3 μC - Enables predictable recovery behavior in discontinuous conduction mode
RoHS-compliant (Pb-free)	E3 suffix indicates matte tin termination - Meets EU Directive 2002/95/EC without exemptions

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with 380 V DC bus. IC Role / Device Role / Timing Role: Primary-side switching element in LLC resonant half-bridge configuration, handling 12 A peak current pulses. Use Value: Low R_DS(on) minimizes conduction loss at high load; 500 V rating accommodates bus transients up to 450 V.	Use Scenario: 200 W industrial AC-DC adapter with universal input (85–265 VAC) and regulated 24 V output. IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter, switching at 65 kHz with 10 V gate drive. Use Value: Avalanche ruggedness eliminates need for clamping circuitry; TO-220AB package enables cost-effective heatsinking.
Telecom Rectifier Module	LED Driver Power Stage
Use Scenario: 48 V telecom rectifier module converting -54 V DC input to +54 V DC output via phase-shifted full-bridge. IC Role / Device Role / Timing Role: Upper-leg switch in full-bridge topology, subjected to hard commutation and voltage overshoot. Use Value: 100 % avalanche testing ensures reliability under line surge and short-circuit fault conditions.	Use Scenario: High-bay LED driver with 300–450 V DC input and constant-current output for 100 W LED arrays. IC Role / Device Role / Timing Role: Primary switch in flyback converter operating in discontinuous conduction mode at 120 kHz. Use Value: Specified body diode Q_rr and t_rr allow accurate loss modeling and EMI prediction during diode recovery.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with 380 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switching element in LLC resonant half-bridge configuration, handling 12 A peak current pulses.

Use Value: Low R_DS(on) minimizes conduction loss at high load; 500 V rating accommodates bus transients up to 450 V.

Use Scenario: 200 W industrial AC-DC adapter with universal input (85–265 VAC) and regulated 24 V output.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter, switching at 65 kHz with 10 V gate drive.

Use Value: Avalanche ruggedness eliminates need for clamping circuitry; TO-220AB package enables cost-effective heatsinking.

Telecom Rectifier Module

LED Driver Power Stage

Use Scenario: 48 V telecom rectifier module converting -54 V DC input to +54 V DC output via phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Upper-leg switch in full-bridge topology, subjected to hard commutation and voltage overshoot.

Use Value: 100 % avalanche testing ensures reliability under line surge and short-circuit fault conditions.

Use Scenario: High-bay LED driver with 300–450 V DC input and constant-current output for 100 W LED arrays.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating in discontinuous conduction mode at 120 kHz.

Use Value: Specified body diode Q_rr and t_rr allow accurate loss modeling and EMI prediction during diode recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.58 Ω, Q_g = 42 nC, TO-220FP package (full-pack)	Lower Q_g but higher R_DS(on); no avalanche rating specified in datasheet	Preferred where gate drive power is constrained but avalanche margin is secondary
IXTP12N50L2	500 V, 12 A, R_DS(on) = 0.55 Ω, Q_g = 52 nC, TO-220 package with logic-level gate (V_GS(th) = 2–4 V)	Logic-level compatible but higher Q_g; not 100 % avalanche tested	Chosen when 5 V microcontroller drive is required, accepting trade-off in switching loss

Compared with SIHP12N50C-E3, STP12NK50ZFP offers lower gate charge but lacks guaranteed avalanche ruggedness, while IXTP12N50L2 enables direct 5 V MCU drive yet increases switching loss due to higher Q_g - making SIHP12N50C-E3 optimal for 10 V-driven, high-reliability offline SMPS where both conduction efficiency and fault tolerance are critical.

Availability

SIHP12N50C-E3 is available at Aetrix Electronics and suitable for offline AC-DC power supplies, industrial motor drives, and telecom rectifier modules requiring stable component supply and long-term manufacturability.

Supply support for SIHP12N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness and reliability.

The SiHP series targets high-voltage power conversion applications, designed specifically for primary-side switching in universal-input SMPS where avalanche capability, low R_DS(on) × Q_g, and thermal efficiency are essential.

FAQ

What is the maximum continuous drain current for SIHP12N50C-E3 at 100 °C case temperature?

The SIHP12N50C-E3 supports 7.5 A continuous drain current when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the safe 150 °C limit under sustained load conditions. The SIHP12N50C-E3 datasheet confirms this value applies with V_GS = 10 V and proper heatsinking.

Does SIHP12N50C-E3 have a fully specified body diode recovery characteristic?

Yes, the SIHP12N50C-E3 provides full body diode specifications: t_rr = 580 ns, Q_rr = 4.3 μC, and I_RRM = 13 A, all measured at T_J = 25 °C with dI/dt = 100 A/μs and V_R = 20 V. These parameters are explicitly listed in the "Drain-Source Body Diode Characteristics" section of the SIHP12N50C-E3 datasheet and enable accurate loss calculation in flyback and forward converters.

What is the gate threshold voltage range for SIHP12N50C-E3?

The SIHP12N50C-E3 has a gate threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V, measured at V_DS = V_GS and I_D = 250 μA. This range ensures consistent turn-on behavior across process variation and temperature, supporting reliable operation with standard 10 V gate drivers. The SIHP12N50C-E3 is not a logic-level device and requires ≥ 5 V minimum for partial enhancement.

Is SIHP12N50C-E3 qualified for avalanche operation?

Yes, the SIHP12N50C-E3 is 100 % avalanche tested per JEDEC JESD24-11, with a guaranteed single-pulse avalanche energy (E_AS) of 180 mJ under defined test conditions (V_DD = 50 V, L = 2.5 mH, R_g = 25 Ω, I_AS = 12 A). This qualification is explicitly stated in the FEATURES section of the SIHP12N50C-E3 datasheet and confirms robustness in inductive switching faults.

What thermal resistance values apply to SIHP12N50C-E3 in TO-220AB package?

The SIHP12N50C-E3 in TO-220AB package has R_thJC = 0.6 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount). These values are confirmed in the THERMAL RESISTANCE RATINGS table of the SIHP12N50C-E3 datasheet and reflect performance on a 1" square FR-4 PCB. The low R_thJC enables efficient heat transfer to an external heatsink.

SIHP12N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 555mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1375 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: -

SIHP12N50C-E3 FAQ

1.How can I place an order for SIHP12N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP12N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP12N50C-E3 reliable?

The price and inventory of SIHP12N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP12N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHP12N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP12N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP12N50C-E3?

SIHP12N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP12N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP12N50C-E3?

For technical support, including SIHP12N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP12N50C-E3 requirements.

6.How does Aetrix verify that SIHP12N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP12N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP12N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHP12N50C-E3?

All SIHP12N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP12N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP12N50C-E3 part is unused and in its original packaging.

Return procedure for SIHP12N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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