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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP12N50E-BE3

Name: SIHP12N50E-BE3
Brand: Vishay Siliconix
SKU: SIHP12N50E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP12N50E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP12N50E-BE3.pdf

Description:: N-CHANNEL 500V

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Product details

Overview

SIHP12N50E-BE3 from Vishay Siliconix is a 500 V, 10.5 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for hard-switched SMPS topologies including PFC and flyback converters, with R_DS(on) = 0.380 Ω at V_GS = 10 V and Q_g = 50 nC.

For engineers reviewing the SIHP12N50E-BE3 datasheet, SIHP12N50E-BE3 pinout, SIHP12N50E-BE3 application, or SIHP12N50E-BE3 equivalent, key selection criteria include avalanche-rated UIS energy (103 mJ), low C_iss (886 pF), and thermal resistance R_thJC = 1.1 °C/W - critical for high-efficiency, thermally constrained power stages.

Technical Context

This MOSFET employs planar silicon technology with an integral body diode rated for 10.5 A continuous source-drain current and 244 ns reverse recovery time. Its gate threshold voltage (2.0–4.0 V) ensures robust turn-on under standard 10 V drive while maintaining noise immunity.

The device is characterized for operation up to T_J = 150 °C with a positive V_DS temperature coefficient (0.60 V/°C) and supports unclamped inductive switching per JEDEC JESD24-11. Dynamic parameters are specified at V_DS = 400 V, I_D = 6 A, R_g = 9.1 Ω, enabling accurate loss modeling in PFC and forward converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in PFC and industrial SMPS
R_DS(on) max	0.380 Ω @ V_GS = 10 V - determines conduction loss in high-current primary-side switches
Q_g max	50 nC - directly impacts gate drive power and switching speed in 65–100 kHz hard-switched topologies
E_AS	103 mJ - enables reliable operation under unclamped inductive load conditions without external snubbers
C_iss	886 pF - reduces Miller-induced shoot-through risk and eases gate driver sizing in high-dV/dt environments
R_thJC	1.1 °C/W - allows 114 W dissipation with ≤125 °C case-to-ambient delta, supporting compact heatsink integration
I_D cont @ T_C = 100 °C	6.6 A - defines usable current derating in enclosed, convection-cooled enclosures

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.1 °C/W junction-to-case thermal resistance, and RoHS-compliant lead-free/halogen-free finish.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 6 nC Q_gs enables fast turn-on with minimal driver stress
D (Drain)	High-side power output	Connected to drain metallization and package tab; electrically isolated but thermally coupled to heatsink
S (Source)	Power return / reference node	Common return path for load current and gate drive loop; low-inductance layout essential for EMI control

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	19.0 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–100 kHz PFC stages
Avalanche-rated (UIS)	103 mJ single-pulse energy - eliminates need for external clamping in inductive load switching
Low C_iss and C_rss	886 pF input / 6 pF reverse transfer capacitance - minimizes Miller effect and improves dv/dt immunity
Enhanced body diode	244 ns t_rr, 2.5 μC Q_rr - reduces recovery loss and ringing in synchronous rectification and flyback freewheeling
Thermal performance	R_thJC = 1.1 °C/W - enables direct-mount heatsinking for high-power density designs without thermal interface pads

Applications

PC ATX Silver Box Power Supply	Two-Stage LED Driver
Use Scenario: Primary-side switch in active PFC boost stage operating at 65–100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling inductor current to shape input current waveform. Use Value: 500 V rating and 103 mJ UIS energy ensure reliability during line surges and startup transients without snubber circuits.	Use Scenario: Primary-side switch in flyback converter powering constant-current LED strings in commercial lighting fixtures. IC Role / Device Role / Timing Role: Main power switch regulating energy transfer to secondary side via transformer coupling. Use Value: Low 0.380 Ω R_DS(on) and 50 nC Q_g reduce total losses at 70–100 kHz, improving thermal margin in sealed luminaires.
Hard-Switched Two-Switch Forward Converter	Industrial SMPS for Control Systems
Use Scenario: Main switching device in two-switch forward topology for 24–48 V output, 200–500 W industrial power modules. IC Role / Device Role / Timing Role: Synchronized high-side switch managing duty cycle and core reset during each switching cycle. Use Value: 1.1 °C/W R_thJC and 114 W P_D allow direct heatsink mounting, simplifying mechanical design and reducing thermal interface layers.	Use Scenario: Primary-side switch in DIN-rail mounted 24 V/5 A SMPS powering PLC I/O modules and sensors. IC Role / Device Role / Timing Role: Robust main switch handling wide input range (85–265 VAC) and sustained overload conditions. Use Value: -55 to +150 °C operating range and 10.5 A continuous current support long-term reliability in unventilated enclosures.

PC ATX Silver Box Power Supply

Two-Stage LED Driver

Use Scenario: Primary-side switch in active PFC boost stage operating at 65–100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling inductor current to shape input current waveform.

Use Value: 500 V rating and 103 mJ UIS energy ensure reliability during line surges and startup transients without snubber circuits.

Use Scenario: Primary-side switch in flyback converter powering constant-current LED strings in commercial lighting fixtures.

IC Role / Device Role / Timing Role: Main power switch regulating energy transfer to secondary side via transformer coupling.

Use Value: Low 0.380 Ω R_DS(on) and 50 nC Q_g reduce total losses at 70–100 kHz, improving thermal margin in sealed luminaires.

Hard-Switched Two-Switch Forward Converter

Industrial SMPS for Control Systems

Use Scenario: Main switching device in two-switch forward topology for 24–48 V output, 200–500 W industrial power modules.

IC Role / Device Role / Timing Role: Synchronized high-side switch managing duty cycle and core reset during each switching cycle.

Use Value: 1.1 °C/W R_thJC and 114 W P_D allow direct heatsink mounting, simplifying mechanical design and reducing thermal interface layers.

Use Scenario: Primary-side switch in DIN-rail mounted 24 V/5 A SMPS powering PLC I/O modules and sensors.

IC Role / Device Role / Timing Role: Robust main switch handling wide input range (85–265 VAC) and sustained overload conditions.

Use Value: -55 to +150 °C operating range and 10.5 A continuous current support long-term reliability in unventilated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 45 nC, TO-220FP package (full-pack)	Lower R_thJA due to insulated package; slightly lower Q_g reduces gate drive loss	Preferred when isolation from heatsink is required; same footprint but different mounting (no insulator needed for SIHP12N50E-BE3)
IRFP460LC	500 V, 20 A, R_DS(on) = 0.27 Ω, Q_g = 120 nC, TO-247AC package	Higher current rating and lower R_DS(on), but larger package and higher Q_g demands stronger gate driver	Selected for higher-power designs (>300 W) where thermal headroom and peak current margin outweigh layout size constraints

Compared with STP12NK50ZFP and IRFP460LC, SIHP12N50E-BE3 offers best-in-class FOM for mid-power PFC and flyback use cases, with optimized trade-off between conduction loss, switching charge, and thermal resistance in TO-220AB - making it ideal for cost-sensitive, space-constrained 100–250 W systems.

Availability

SIHP12N50E-BE3 is available at Aetrix Electronics and suitable for PC ATX power supplies, LED lighting drivers, and industrial SMPS requiring stable component supply, long-lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for SIHP12N50E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHP12N50E-BE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, hard-switched AC/DC and DC/DC conversion in computing, lighting, and industrial power systems.

FAQ

What is the maximum continuous drain current of SIHP12N50E-BE3 at 100 °C case temperature?

The SIHP12N50E-BE3 supports 6.6 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations under real-world heatsink conditions and must be used for safe operating area (SOA) validation in designs where ambient temperature exceeds 50 °C or airflow is restricted. The SIHP12N50E-BE3 datasheet confirms this rating applies with V_GS = 10 V and T_J ≤ 150 °C.

Does SIHP12N50E-BE3 have avalanche capability, and how is it rated?

Yes, SIHP12N50E-BE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy of 103 mJ at T_J = 25 °C, tested per JEDEC JESD24-11. This rating is measured with L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.7 A. The SIHP12N50E-BE3's ruggedness supports reliable operation in PFC and flyback converters without external avalanche clamping components.

What is the gate threshold voltage range for SIHP12N50E-BE3, and why does it matter?

The SIHP12N50E-BE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures full enhancement at standard 10 V gate drive while providing noise margin against spurious turn-on in high-dV/dt environments. The SIHP12N50E-BE3's typical V_GS(th) of ~3.0 V aligns with industry-standard logic-level drivers, eliminating need for level-shifting circuitry in most SMPS designs.

How does the body diode performance of SIHP12N50E-BE3 compare to standard MOSFETs?

The SIHP12N50E-BE3 features an optimized body diode with t_rr = 244 ns and Q_rr = 2.5 μC at T_J = 25 °C, IS = 6 A, dI/dt = 100 A/μs. This is significantly faster and lower-charge than generic power MOSFETs, reducing recovery loss and EMI in flyback and LLC resonant converters. The SIHP12N50E-BE3's body diode is characterized for hard commutation, supporting quasi-resonant and discontinuous conduction mode operation.

Is SIHP12N50E-BE3 compatible with lead-free reflow soldering processes?

Yes, SIHP12N50E-BE3 is lead (Pb)-free and halogen-free, qualified for peak reflow temperatures up to 300 °C for 10 seconds per IPC/JEDEC J-STD-020. The "-BE3" suffix explicitly denotes Vishay's lead-free/halogen-free manufacturing process and packaging. The SIHP12N50E-BE3's TO-220AB package meets RoHS Directive 2011/65/EU and complies with Vishay's material categorization per document 99912.

SIHP12N50E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 886 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP12N50E-BE3 FAQ

1.How can I place an order for SIHP12N50E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP12N50E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP12N50E-BE3 reliable?

The price and inventory of SIHP12N50E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP12N50E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP12N50E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP12N50E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP12N50E-BE3?

SIHP12N50E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP12N50E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP12N50E-BE3?

For technical support, including SIHP12N50E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP12N50E-BE3 requirements.

6.How does Aetrix verify that SIHP12N50E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP12N50E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP12N50E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP12N50E-BE3?

All SIHP12N50E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP12N50E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP12N50E-BE3 part is unused and in its original packaging.

Return procedure for SIHP12N50E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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