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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP12N50E-GE3

Name: SIHP12N50E-GE3
Brand: Vishay Siliconix
SKU: SIHP12N50E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP12N50E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP12N50E-GE3.pdf

Description:: MOSFET N-CH 500V 10.5A TO220AB

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Product details

Overview

SIHP12N50E-GE3 from Vishay Siliconix is a 500 V, 10.5 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for hard-switched SMPS topologies including PFC and flyback converters, with R_DS(on) = 0.380 Ω at V_GS = 10 V and Q_g = 50 nC.

For engineers reviewing the SIHP12N50E-GE3 datasheet, SIHP12N50E-GE3 pinout, SIHP12N50E-GE3 application, or SIHP12N50E-GE3 equivalent, key selection criteria include avalanche energy rating (E_AS = 103 mJ), low C_iss (886 pF), and thermal resistance R_thJC = 1.1 °C/W for high-efficiency power stage design.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and cell layout to achieve low figure-of-merit (R_DS(on) × Q_g) of 19 mΩ·nC. Its integral body diode supports unclamped inductive switching with t_rr = 244 ns and Q_rr = 2.5 μC at I_F = 6 A.

The device operates with V_GS(th) = 2.0–4.0 V and exhibits positive V_DS temperature coefficient (0.60 V/°C), enabling stable parallel operation. It is rated for T_J = –55 to +150 °C and features ±30 V gate-source voltage tolerance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in 400 V DC bus PFC and offline SMPS
R_DS(on) max	0.380 Ω at V_GS = 10 V - limits conduction loss to ≤2.1 W at 6 A continuous drain current
Q_g max	50 nC - enables efficient 100–300 kHz switching with moderate gate drive strength
E_AS	103 mJ - withstands single-pulse inductive energy without failure in flyback/PFC snubberless designs
C_iss	886 pF - reduces gate drive power and improves noise immunity in high-dV/dt environments
R_thJC	1.1 °C/W - allows 114 W power dissipation with ≤125 °C case-to-junction rise under heatsink cooling
t_rr	244 ns - minimizes reverse recovery loss during hard commutation in two-switch forward converters

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant outline. Thermal pad electrically tied to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance dominated by C_iss = 886 pF
D (Drain)	High-side power output	Connected to heatsink tab; handles 500 V blocking and 21 A pulsed current
S (Source)	Power return / reference	Common node for gate drive return and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Avalanche-rated operation	103 mJ single-pulse UIS capability eliminates need for external clamping in inductive load circuits
Low R_DS(on) × Q_g	19 mΩ·nC FOM enables high efficiency at both conduction and switching frequencies up to 300 kHz
Enhanced body diode performance	Q_rr = 2.5 μC and t_rr = 244 ns reduce cross-conduction loss in synchronous rectification and resonant topologies
Thermal robustness	R_thJC = 1.1 °C/W supports >100 W continuous operation with standard TO-220 heatsinking
Pb-free and halogen-free	Meets RoHS Directive 2011/65/EU and Vishay's material compliance standard #99912

Applications

PC Silver Box / ATX Power Supplies	Two-Stage LED Lighting
Use Scenario: Primary-side switch in active PFC and main DC-DC converter stages of 300–600 W desktop PC power supplies. IC Role / Device Role / Timing Role: High-voltage N-channel switching element controlling energy transfer into bulk capacitor and transformer primary. Use Value: Low Q_g and C_iss minimize gate drive loss and EMI; 500 V rating accommodates 400 V DC bus with margin.	Use Scenario: High-side switch in boost PFC front-end and LLC resonant half-bridge of commercial LED drivers. IC Role / Device Role / Timing Role: Hard-switched power transistor managing input rectification, power factor correction, and isolation-stage switching. Use Value: 103 mJ E_AS sustains unclamped inductive turn-off; R_DS(on) = 0.380 Ω limits conduction loss at 7–10 A RMS.
Power Factor Correction (PFC)	Flyback Converter
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC controllers for industrial AC-DC adapters. IC Role / Device Role / Timing Role: Main energy storage control switch synchronizing with line frequency and PWM controller timing. Use Value: Positive V_DS tempco ensures current sharing stability; low C_oss (52 pF) reduces capacitive turn-on loss.	Use Scenario: Primary-side switch in universal-input (85–265 VAC), 30–100 W flyback converters for consumer wall adapters. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating magnetic energy transfer per switching cycle. Use Value: 21 A pulsed drain rating supports peak currents in discontinuous conduction mode; TO-220AB enables cost-effective heatsinking.

PC Silver Box / ATX Power Supplies

Two-Stage LED Lighting

Use Scenario: Primary-side switch in active PFC and main DC-DC converter stages of 300–600 W desktop PC power supplies.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element controlling energy transfer into bulk capacitor and transformer primary.

Use Value: Low Q_g and C_iss minimize gate drive loss and EMI; 500 V rating accommodates 400 V DC bus with margin.

Use Scenario: High-side switch in boost PFC front-end and LLC resonant half-bridge of commercial LED drivers.

IC Role / Device Role / Timing Role: Hard-switched power transistor managing input rectification, power factor correction, and isolation-stage switching.

Use Value: 103 mJ E_AS sustains unclamped inductive turn-off; R_DS(on) = 0.380 Ω limits conduction loss at 7–10 A RMS.

Power Factor Correction (PFC)

Flyback Converter

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC controllers for industrial AC-DC adapters.

IC Role / Device Role / Timing Role: Main energy storage control switch synchronizing with line frequency and PWM controller timing.

Use Value: Positive V_DS tempco ensures current sharing stability; low C_oss (52 pF) reduces capacitive turn-on loss.

Use Scenario: Primary-side switch in universal-input (85–265 VAC), 30–100 W flyback converters for consumer wall adapters.

IC Role / Device Role / Timing Role: Voltage-controlled current source regulating magnetic energy transfer per switching cycle.

Use Value: 21 A pulsed drain rating supports peak currents in discontinuous conduction mode; TO-220AB enables cost-effective heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 45 nC, TO-220FP package (full-pack, no isolated tab)	Lower R_thJA but higher R_thJC (1.5 °C/W); not drain-isolated - requires insulating washer	Prefer when board space is constrained and heatsink isolation is managed externally
IRFP460LC	500 V, 20 A, R_DS(on) = 0.27 Ω, Q_g = 120 nC, TO-247AC package	Higher current and lower R_DS(on), but larger footprint and 2.4× gate charge increases driver requirements	Choose for higher-power (>150 W) designs where thermal headroom and peak current demand exceed SIHP12N50E-GE3 limits

Compared with STP12NK50ZFP and IRFP460LC, SIHP12N50E-GE3 delivers optimal balance of low gate charge, drain-isolated TO-220AB packaging, and proven avalanche ruggedness for mid-power SMPS - making it preferred for cost-sensitive, thermally constrained PFC and flyback implementations where layout simplicity and reliability are prioritized over raw current rating.

Availability

SIHP12N50E-GE3 is available at Aetrix Electronics and suitable for PC silver box power supplies, two-stage LED lighting drivers, and flyback-based AC-DC adapters requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SIHP12N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHP12N50E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-frequency, hard-switched power conversion in computing, lighting, and consumer electronics applications.

FAQ

What is the maximum continuous drain current rating for SIHP12N50E-GE3 at 100 °C case temperature?

The SIHP12N50E-GE3 has a continuous drain current rating of 6.6 A at T_C = 100 °C, derated linearly from 10.5 A at 25 °C using a 0.91 W/°C factor. This value reflects thermal limits under sustained conduction, not transient capability. The SIHP12N50E-GE3 datasheet specifies this in Absolute Maximum Ratings and confirms it with SOA curves.

Does SIHP12N50E-GE3 have avalanche energy rating, and what is its value?

Yes, the SIHP12N50E-GE3 is fully rated for unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 103 mJ, tested per JEDEC JESD24-1. This rating is confirmed in the Absolute Maximum Ratings table and validated across temperature. The SIHP12N50E-GE3 uses rugged silicon design to sustain this energy without parameter shift or failure.

What is the gate threshold voltage range for SIHP12N50E-GE3, and how does it affect drive requirements?

The SIHP12N50E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while avoiding unintended conduction from noise. The SIHP12N50E-GE3 is not a logic-level device; 5 V drive is insufficient for full enhancement, and operation requires ≥8 V for low R_DS(on).

Is SIHP12N50E-GE3 lead (Pb)-free and halogen-free, and which compliance standards does it meet?

Yes, SIHP12N50E-GE3 is lead-free and halogen-free per Vishay's material categorization standard #99912 and complies with RoHS Directive 2011/65/EU. The "-GE3" suffix explicitly denotes Pb-free and halogen-free construction. The SIHP12N50E-GE3 datasheet confirms this in the Ordering Information section and references compliance documentation at www.vishay.com/doc?99912.

What is the typical reverse recovery time (t_rr) of the body diode in SIHP12N50E-GE3, and under what conditions is it measured?

The SIHP12N50E-GE3 body diode has a typical reverse recovery time (t_rr) of 244 ns, measured at T_J = 25 °C, I_F = I_S = 6 A, dI/dt = 100 A/μs, and V_R = 25 V. This value appears in the Specifications table and is critical for estimating switching loss in hard-commutated topologies. The SIHP12N50E-GE3 body diode is optimized for fast recovery without excessive ringing or peak reverse current.

SIHP12N50E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 886 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP12N50E-GE3 FAQ

1.How can I place an order for SIHP12N50E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP12N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP12N50E-GE3 reliable?

The price and inventory of SIHP12N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP12N50E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP12N50E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP12N50E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP12N50E-GE3?

SIHP12N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP12N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP12N50E-GE3?

For technical support, including SIHP12N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP12N50E-GE3 requirements.

6.How does Aetrix verify that SIHP12N50E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP12N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP12N50E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP12N50E-GE3?

All SIHP12N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP12N50E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP12N50E-GE3 part is unused and in its original packaging.

Return procedure for SIHP12N50E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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