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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP12N60E-E3

Name: SIHP12N60E-E3
Brand: Vishay Siliconix
SKU: SIHP12N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP12N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP12N60E-E3.pdf

Description:: MOSFET N-CH 600V 12A TO220AB

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Product details

Overview

SIHP12N60E-E3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.38 Ω (max) at V_GS = 10 V, Q_g = 58 nC (max), and E_AS = 117 mJ - designed for high-efficiency switching in PFC and SMPS stages of server and telecom power supplies.

For engineers reviewing the SIHP12N60E-E3 datasheet, SIHP12N60E-E3 pinout, SIHP12N60E-E3 application, or SIHP12N60E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated ruggedness, ultra-low gate charge, and thermal performance with R_thJC = 0.85 °C/W - critical for high-density, high-reliability power conversion designs.

Technical Context

This device operates as a unidirectional high-voltage switching element in hard-switched and resonant topologies. Its 600 V V_DS rating supports 400 V DC bus applications with margin, while the 12 A continuous drain current (T_C = 25 °C) and 27 A pulsed rating enable robust transient handling in PFC boost and LLC primary-side switches.

The MOSFET integrates a fast-recovery body diode (t_rr = 350 ns, Q_rr = 4 μC) with low V_SD = 1.2 V (T_J = 25 °C, I_S = 6 A), supporting synchronous rectification and ZVS transitions. Gate drive compatibility is ensured by V_GS(th) = 2–4 V and ±30 V gate rating, enabling standard 10 V or 12 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % voltage margin for surge and ringing in telecom/server PSUs
R_DS(on) max	0.38 Ω at V_GS = 10 V - sets conduction loss floor in PFC/SMPS output stage; enables <1.8 W I²R loss at 6 A
Q_g max	58 nC - determines gate drive power and switching speed; enables <35 ns turn-off delay with 9.1 Ω R_g
E_AS	117 mJ - specifies single-pulse avalanche energy handling without failure; critical for inductive load switching reliability
R_thJC	0.85 °C/W - defines junction-to-case thermal resistance; allows ~125 W dissipation before T_J exceeds 150 °C at T_C = 25 °C
t_rr	350 ns - body diode reverse recovery time at I_F = 6 A, dI/dt = 100 A/μs - impacts switching loss and EMI in bridge configurations

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 3-pin vertical lead configuration. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–10 V logic-level drive; input capacitance C_iss = 937 pF affects driver sizing
D	Drain	High-voltage power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential
S	Source	Power return and reference node for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	22.4 Ω·nC - reduces combined conduction + switching losses vs. legacy 600 V MOSFETs, improving efficiency at 100–300 kHz
Avalanche energy rated (UIS)	117 mJ - guarantees safe operation under unclamped inductive switching events without derating or snubbers
Ultra-low gate charge	Q_g = 29–58 nC - lowers gate driver power consumption and enables faster switching with reduced EMI
Fast body diode recovery	t_rr = 350 ns, Q_rr = 4 μC - minimizes commutation loss and voltage overshoot in half-bridge and synchronous rectifier use
Low input capacitance	C_iss = 937 pF - eases gate drive design and improves Miller immunity in high-dV/dt environments

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating at 100 kHz in 3 kW front-end AC/DC unit with active PFC. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology; handles 12 A RMS input current at 400 V DC bus. Use Value: Low R_DS(on) limits conduction loss to <1.8 W; low Q_g enables clean 20 ns rise/fall times, reducing switching loss and EMI filter size.	Use Scenario: Primary-side switch in phase-shifted full-bridge DC/DC converter for 48 V telecom rectifier. IC Role / Device Role / Timing Role: High-side switching element subjected to 600 V blocking and ZVS transitions; conducts up to 27 A pulsed current. Use Value: Avalanche rating ensures survivability during startup transients; fast t_rr and low Q_rr reduce dead-time loss and improve ZVS window stability.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC link switch in string inverter's DC/AC H-bridge stage, switching at 16 kHz with 600 V bus. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 3-phase inverter leg; blocks 600 V and conducts 12 A continuous motor current. Use Value: R_thJC = 0.85 °C/W enables direct heatsink mounting without thermal derating; low C_oss = 53 pF reduces capacitive turn-on loss.	Use Scenario: Output stage switch in 5 kW variable-frequency drive feeding induction motor. IC Role / Device Role / Timing Role: Hard-switched IGBT alternative in 2-level inverter; handles repetitive 27 A pulses and 70 V/ns dV/dt stress. Use Value: Body diode V_SD = 1.2 V and t_rr = 350 ns support freewheeling with minimal forward drop and recovery loss; dV/dt rating of 70 V/ns ensures noise immunity.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating at 100 kHz in 3 kW front-end AC/DC unit with active PFC.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology; handles 12 A RMS input current at 400 V DC bus.

Use Value: Low R_DS(on) limits conduction loss to <1.8 W; low Q_g enables clean 20 ns rise/fall times, reducing switching loss and EMI filter size.

Use Scenario: Primary-side switch in phase-shifted full-bridge DC/DC converter for 48 V telecom rectifier.

IC Role / Device Role / Timing Role: High-side switching element subjected to 600 V blocking and ZVS transitions; conducts up to 27 A pulsed current.

Use Value: Avalanche rating ensures survivability during startup transients; fast t_rr and low Q_rr reduce dead-time loss and improve ZVS window stability.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC link switch in string inverter's DC/AC H-bridge stage, switching at 16 kHz with 600 V bus.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 3-phase inverter leg; blocks 600 V and conducts 12 A continuous motor current.

Use Value: R_thJC = 0.85 °C/W enables direct heatsink mounting without thermal derating; low C_oss = 53 pF reduces capacitive turn-on loss.

Use Scenario: Output stage switch in 5 kW variable-frequency drive feeding induction motor.

IC Role / Device Role / Timing Role: Hard-switched IGBT alternative in 2-level inverter; handles repetitive 27 A pulses and 70 V/ns dV/dt stress.

Use Value: Body diode V_SD = 1.2 V and t_rr = 350 ns support freewheeling with minimal forward drop and recovery loss; dV/dt rating of 70 V/ns ensures noise immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	600 V, 12 A, R_DS(on) = 0.42 Ω, Q_g = 45 nC, no UIS rating	Lacks avalanche energy specification; lower gate charge but higher conduction loss	Preferable where gate drive power is constrained and inductive fault risk is mitigated externally
IXTH12N60L2	600 V, 12 A, R_DS(on) = 0.39 Ω, Q_g = 62 nC, E_AS = 100 mJ	Slightly higher Q_g and lower E_AS; same TO-247 package (not TO-220AB)	Preferred when higher thermal headroom is needed via TO-247 mounting, accepting larger footprint and cost

Compared with STP12NK60ZFP and IXTH12N60L2, SIHP12N60E-E3 delivers superior FOM (22.4 vs. 18.9 and 24.2 Ω·nC), certified avalanche ruggedness, and TO-220AB compatibility - making it optimal for space-constrained, high-reliability 600 V switching where layout and fault tolerance are prioritized.

Availability

SIHP12N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and Pb-free/halogen-free compliance.

Supply support for SIHP12N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-grade qualification.

The E Series Power MOSFET product line targets high-performance switching applications in server, telecom, industrial, and renewable energy systems - engineered for low FOM, rugged avalanche operation, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for SIHP12N60E-E3 at 100 °C case temperature?

The SIHP12N60E-E3 has a continuous drain current rating of 7.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 to +150 °C operating range. The SIHP12N60E-E3 maintains R_DS(on) stability across this range per Fig. 4 in the datasheet.

Does SIHP12N60E-E3 have avalanche energy rating, and what is its value?

Yes, the SIHP12N60E-E3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 117 mJ, tested per conditions in Note b: V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, I_AS = 4.5 A. This rating is guaranteed and validated across production lots, making SIHP12N60E-E3 suitable for designs where inductive fault protection is required without external snubbers.

What is the gate threshold voltage range for SIHP12N60E-E3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHP12N60E-E3 is specified from 2 V to 4 V at I_D = 250 μA. This range confirms logic-level compatibility with 5 V microcontrollers and standard 10 V gate drivers. To ensure full enhancement and minimize R_DS(on), the SIHP12N60E-E3 requires V_GS ≥ 10 V, as R_DS(on) is characterized at that level and drops only marginally above it.

Can SIHP12N60E-E3 be used in place of a standard 600 V IGBT in motor drive inverters?

The SIHP12N60E-E3 can replace certain 600 V IGBTs in low-to-mid power motor drives (<5 kW) where switching frequency exceeds 10 kHz and conduction loss dominates. Unlike IGBTs, the SIHP12N60E-E3 offers lower gate drive complexity and no tail current, but requires careful attention to dV/dt-induced shoot-through and body diode recovery. Its 70 V/ns dV/dt rating and 350 ns t_rr make SIHP12N60E-E3 viable in well-designed half-bridge layouts.

Is SIHP12N60E-E3 RoHS-compliant and halogen-free?

Yes, SIHP12N60E-E3 is both RoHS-compliant and halogen-free, as indicated by the "-E3" suffix in the part number per Vishay's ordering information. It meets JEDEC JS709B and IEC 61249-2-21 standards. The "-BE3" and "-GE3" variants also meet these requirements, with "-E3" denoting lead (Pb)-free construction and "-GE3" specifying additional halogen-free compliance - all verified in Document Number 91479.

SIHP12N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 937 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP12N60E-E3 FAQ

1.How can I place an order for SIHP12N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP12N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP12N60E-E3 reliable?

The price and inventory of SIHP12N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP12N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHP12N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP12N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP12N60E-E3?

SIHP12N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP12N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP12N60E-E3?

For technical support, including SIHP12N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP12N60E-E3 requirements.

6.How does Aetrix verify that SIHP12N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP12N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP12N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHP12N60E-E3?

All SIHP12N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP12N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP12N60E-E3 part is unused and in its original packaging.

Return procedure for SIHP12N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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