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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP12N60E-GE3

Name: SIHP12N60E-GE3
Brand: Vishay Siliconix
SKU: SIHP12N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP12N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP12N60E-GE3.pdf

Description:: MOSFET N-CH 600V 12A TO220AB

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Product details

Overview

SIHP12N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-efficiency switch-mode power supplies with R_DS(on) = 0.38 Ω at V_GS = 10 V, Q_g = 58 nC, and E_AS = 117 mJ. It serves as the main switching device in PFC and DC-DC stages of telecom rectifiers.

For engineers reviewing the SIHP12N60E-GE3 datasheet, SIHP12N60E-GE3 pinout, SIHP12N60E-GE3 application, or SIHP12N60E-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS compatibility, thermal resistance (R_thJC = 0.85 °C/W), and body diode recovery performance (t_rr = 350 ns, Q_rr = 4 μC).

Technical Context

This MOSFET employs planar VDMOS technology with optimized cell pitch and gate oxide thickness to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of 22.04 Ω·nC. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on under wide input voltage ranges in offline converters.

The device integrates an intrinsic fast-recovery body diode rated for repetitive ID = 12 A and pulsed ISM = 48 A, with controlled dV/dt immunity (70 V/ns) and unclamped inductive switching capability up to 117 mJ - critical for hard-switched PFC and resonant LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 VAC input systems with ≥2× safety margin for surge and line transients
R_DS(on) max	0.38 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 6 A continuous drain current
Q_g max	58 nC - reduces gate drive power and allows use with standard 1 A peak drivers
E_AS	117 mJ - withstands single-pulse inductive energy without failure in PFC choke or transformer primary
t_rr	350 ns - limits reverse recovery losses and EMI generation during hard commutation
R_thJC	0.85 °C/W - permits 147 W dissipation with ≤125 °C junction rise over case at TC = 25 °C
I_D cont	12 A @ T_C = 25 °C - defines maximum continuous current in heatsink-mounted configurations

Pinout & Package

TO-220AB package with isolated tab (drain-connected), through-hole mounting, and JEDEC-standard footprint. Thermal path optimized via copper leadframe and direct die-to-tab bond.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; requires <58 nC charge for full enhancement; sensitive to ESD (±30 V rating)
D (Drain)	High-side power output	Connected to internal die backside and metal tab; electrically tied to heatsink; carries full load current and blocking voltage
S (Source)	Reference node / return path	Common connection point for gate drive reference, current sensing, and low-side switching control; forms source-follower configuration in synchronous rectification

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	22.04 Ω·nC - improves efficiency in both conduction and switching domains simultaneously
Avalanche-rated (UIS)	117 mJ single-pulse energy - eliminates need for external snubbers in inductive switching circuits
Fast body diode recovery	t_rr = 350 ns, Q_rr = 4 μC - reduces cross-conduction losses and voltage overshoot in bridge-leg operation
Low C_iss	937 pF @ V_DS = 100 V - minimizes Miller effect and improves dv/dt immunity during turn-off
High dV/dt immunity	70 V/ns @ T_J = 125 °C - prevents false turn-on in high-noise industrial environments

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) rectifiers with active PFC + LLC resonant stage. IC Role / Device Role / Timing Role: Main high-voltage switch in boost PFC and half-bridge LLC primary; operates at 100–300 kHz with zero-voltage switching. Use Value: Low Q_g and fast t_rr reduce switching losses by ~18% vs. legacy 600 V MOSFETs, enabling >96% system efficiency at full load.	Use Scenario: High-density 48 V telecom rectifier modules handling 230 VAC input with universal line range (90–264 VAC). IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost PFC stage; handles 12 A RMS input current. Use Value: R_thJC = 0.85 °C/W and avalanche rating allow compact heatsink design while surviving AC line surges per IEC 61000-4-5.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters with MPPT input up to 1000 VDC and 10 kW output. IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge inverter leg; blocks 600 V DC bus with 2× safety margin; conducts bidirectionally via body diode during freewheeling. Use Value: Body diode Q_rr = 4 μC and soft recovery minimize shoot-through risk and EMI during PWM dead-time transitions.	Use Scenario: Output stage in 5–15 kW variable frequency drives powering HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET hybrid inverter; handles 12 A continuous phase current with 27 A pulsed capability. Use Value: 150 °C max junction temperature and robust UIS rating ensure reliability under motor stall and overload conditions.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) rectifiers with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Main high-voltage switch in boost PFC and half-bridge LLC primary; operates at 100–300 kHz with zero-voltage switching.

Use Value: Low Q_g and fast t_rr reduce switching losses by ~18% vs. legacy 600 V MOSFETs, enabling >96% system efficiency at full load.

Use Scenario: High-density 48 V telecom rectifier modules handling 230 VAC input with universal line range (90–264 VAC).

IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost PFC stage; handles 12 A RMS input current.

Use Value: R_thJC = 0.85 °C/W and avalanche rating allow compact heatsink design while surviving AC line surges per IEC 61000-4-5.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters with MPPT input up to 1000 VDC and 10 kW output.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge inverter leg; blocks 600 V DC bus with 2× safety margin; conducts bidirectionally via body diode during freewheeling.

Use Value: Body diode Q_rr = 4 μC and soft recovery minimize shoot-through risk and EMI during PWM dead-time transitions.

Use Scenario: Output stage in 5–15 kW variable frequency drives powering HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET hybrid inverter; handles 12 A continuous phase current with 27 A pulsed capability.

Use Value: 150 °C max junction temperature and robust UIS rating ensure reliability under motor stall and overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	600 V, 12 A, R_DS(on) = 0.45 Ω, Q_g = 42 nC, no UIS rating	Lacks avalanche energy specification; lower gate charge but higher on-resistance	Prefer SIHP12N60E-GE3 where unclamped inductive stress is present (e.g., PFC chokes); STP12NK60ZFP suits cost-sensitive non-avalanche designs
IXTH12N60L2	600 V, 12 A, R_DS(on) = 0.39 Ω, Q_g = 65 nC, E_AS = 120 mJ, TO-247 package	Higher Q_g, larger TO-247 package, identical voltage/current ratings	Choose SIHP12N60E-GE3 for TO-220AB footprint compatibility and lower gate drive demand; IXTH12N60L2 preferred when higher thermal mass or PCB layout flexibility is needed

Compared with STP12NK60ZFP and IXTH12N60L2, SIHP12N60E-GE3 delivers optimal balance of avalanche ruggedness, gate drive efficiency, and TO-220AB thermal performance - making it the preferred choice for space-constrained, high-reliability PFC and SMPS designs requiring certified UIS capability.

Availability

SIHP12N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.

Supply support for SIHP12N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHP12N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-frequency, high-efficiency switch-mode power conversion in demanding industrial and communications infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHP12N60E-GE3 at 100 °C case temperature?

The SIHP12N60E-GE3 supports 7.8 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations alongside R_thJC = 0.85 °C/W to ensure junction temperature remains ≤150 °C under operating conditions. The SIHP12N60E-GE3 datasheet confirms this value under "Continuous drain current (T_J = 150 °C)".

Does SIHP12N60E-GE3 have avalanche energy rating, and what is its value?

Yes, the SIHP12N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 117 mJ, tested per industry standard conditions (V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, I_AS = 4.5 A). This rating is explicitly listed in the Absolute Maximum Ratings table and validated across manufacturing lots. The SIHP12N60E-GE3 uses proprietary process enhancements to guarantee this ruggedness without external protection circuitry.

What is the typical gate charge profile of SIHP12N60E-GE3, and how does it affect driver selection?

The SIHP12N60E-GE3 has Q_g = 58 nC (max), Q_gs = 6 nC, and Q_gd = 13 nC at V_GS = 10 V and V_DS = 480 V. Its low Q_gd/Q_g ratio (~22%) indicates reduced Miller plateau duration, enabling faster switching transitions. For reliable operation, drivers delivering ≥1 A peak current are recommended to achieve <50 ns turn-on delay and <40 ns rise time. The SIHP12N60E-GE3 benefits from gate resistors between 5–15 Ω to balance EMI and switching loss.

How does the body diode performance of SIHP12N60E-GE3 compare to standard silicon diodes in freewheeling applications?

The SIHP12N60E-GE3 features an integrated body diode with V_SD = 1.2 V at I_S = 6 A and T_J = 25 °C, t_rr = 350 ns, and Q_rr = 4 μC - significantly faster and lower-loss than discrete FRD alternatives in same current class. Its soft recovery characteristic minimizes voltage overshoot during commutation. In synchronous rectification or half-bridge freewheeling, the SIHP12N60E-GE3 body diode enables efficient operation without external diode replacement, provided dI/dt stays within 100 A/μs limit.

Is SIHP12N60E-GE3 RoHS-compliant and halogen-free?

Yes, SIHP12N60E-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21 requirements. The "-GE3" suffix explicitly denotes compliance with both lead-free soldering (JEDEC J-STD-020) and halogen-free material standards (≤900 ppm bromine, ≤900 ppm chlorine). Vishay documentation S22-0948-Rev. F confirms this status in the Ordering Information section and Material Categorization note.

SIHP12N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 937 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP12N60E-GE3 FAQ

1.How can I place an order for SIHP12N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP12N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP12N60E-GE3 reliable?

The price and inventory of SIHP12N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP12N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP12N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP12N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP12N60E-GE3?

SIHP12N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP12N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP12N60E-GE3?

For technical support, including SIHP12N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP12N60E-GE3 requirements.

6.How does Aetrix verify that SIHP12N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP12N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP12N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP12N60E-GE3?

All SIHP12N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP12N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP12N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHP12N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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