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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP12N65E-GE3

Name: SIHP12N65E-GE3
Brand: Vishay Siliconix
SKU: SIHP12N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP12N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP12N65E-GE3.pdf

Description:: MOSFET N-CH 650V 12A TO220AB

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Product details

Overview

SIHP12N65E-GE3 from Vishay Siliconix is a 650 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.38 Ω (max) at V_GS = 10 V, Q_g = 70 nC (max), and avalanche-rated E_AS = 226 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHP12N65E-GE3 datasheet, SIHP12N65E-GE3 pinout, SIHP12N65E-GE3 application, or SIHP12N65E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, C_iss = 1224 pF, and robust 650 V blocking capability with dV/dt immunity up to 37 V/ns at T_J = 125 °C.

Technical Context

This device belongs to Vishay's E Series high-voltage MOSFETs, engineered for hard-switched topologies requiring fast switching, low conduction loss, and reliable unclamped inductive switching (UIS). Its body diode exhibits t_rr = 309–618 ns and Q_rr = 3.8–7.6 μC at I_F = 6 A, supporting moderate-frequency ZVS-assisted designs.

The MOSFET uses planar stripe silicon technology with optimized gate oxide and trench-enhanced edge termination. Thermal resistance R_thJC = 0.8 °C/W enables high-power operation with standard heatsinking, while R_thJA = 62 °C/W reflects typical board-level dissipation limits without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % safety margin for transient overvoltage in telecom/server SMPS
R_DS(on) max @ 10 V	0.38 Ω - delivers ≤0.55 W conduction loss at 12 A continuous drain current (T_C = 25 °C)
Q_g max	70 nC - enables efficient gate drive with <1 W average driver power at 100 kHz switching
C_iss	1224 pF - reduces Miller-induced turn-on risk and improves dv/dt immunity in high-side configurations
E_AS	226 mJ - withstands single-pulse inductive energy without failure under specified test conditions (L = 28.2 mH, I_AS = 4 A)
t_r/t_f	19/18 ns (typ) - supports >200 kHz hard-switching with controlled EMI and minimal switching loss trade-off
R_thJC	0.8 °C/W - allows 156 W power dissipation with <125 °C junction rise above case at steady state

Pinout & Package

TO-220AB package: isolated tab (drain-connected), 3-pin through-hole mounting, 15.85 mm maximum height, 10.52 mm width, and 4.65 mm thickness. Mounting hole accommodates M3 screw for mechanical and thermal attachment to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left, when facing front label)	Source (S)	Low-side return path; connects directly to PCB ground plane; carries full load current and body diode reverse recovery charge
Pin 2 (Center)	Drain (D)	High-voltage power node; electrically connected to metal tab; requires isolation from heatsink unless using insulating pad
Pin 3 (Right)	Gate (G)	High-impedance control input; sensitive to ESD and ringing; requires <10 Ω series gate resistor for stable switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	26.6 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–100 kHz PFC and LLC converters
Avalanche energy rating (E_AS)	226 mJ - eliminates need for external snubbers in inductive load switching and improves system ruggedness
Body diode reverse recovery performance	t_rr = 309 ns (typ), Q_rr = 3.8 μC - reduces cross-conduction loss and EMI in synchronous rectification and half-bridge freewheeling
High dV/dt immunity	37 V/ns at T_J = 125 °C - prevents false turn-on during high-speed switching in noisy high-voltage environments
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 100 kHz with zero-voltage switching assistance. Use Value: Low Q_g and C_iss minimize gate drive loss and improve timing control fidelity across temperature.	Use Scenario: DC-link switching stage in string inverter converting 600–1000 V DC to 230 V AC grid. IC Role / Device Role / Timing Role: N-channel high-voltage switch in three-phase inverter leg, rated for repetitive 650 V blocking and 12 A RMS output current. Use Value: 650 V V_DS rating and 226 mJ E_AS ensure safe operation during grid fault transients and DC overvoltage events.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter output stage for 1.5 kW HVAC compressor drive with sensorless field-oriented control. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge, conducting 12 A continuous with 28 A pulsed capability. Use Value: R_DS(on) = 0.33 Ω (typ) at 6 A reduces conduction loss by 18 % vs. comparable 600 V devices, improving thermal headroom.	Use Scenario: Resonant half-bridge switch in electronic ballast powering 40–60 W fluorescent lamps. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET operating at 40–70 kHz with soft-start and lamp ignition pulses. Use Value: Ultra-low Q_gd = 16 nC minimizes Miller plateau duration, enabling precise dead-time control and reducing lamp flicker.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 100 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and C_iss minimize gate drive loss and improve timing control fidelity across temperature.

Use Scenario: DC-link switching stage in string inverter converting 600–1000 V DC to 230 V AC grid.

IC Role / Device Role / Timing Role: N-channel high-voltage switch in three-phase inverter leg, rated for repetitive 650 V blocking and 12 A RMS output current.

Use Value: 650 V V_DS rating and 226 mJ E_AS ensure safe operation during grid fault transients and DC overvoltage events.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter output stage for 1.5 kW HVAC compressor drive with sensorless field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge, conducting 12 A continuous with 28 A pulsed capability.

Use Value: R_DS(on) = 0.33 Ω (typ) at 6 A reduces conduction loss by 18 % vs. comparable 600 V devices, improving thermal headroom.

Use Scenario: Resonant half-bridge switch in electronic ballast powering 40–60 W fluorescent lamps.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET operating at 40–70 kHz with soft-start and lamp ignition pulses.

Use Value: Ultra-low Q_gd = 16 nC minimizes Miller plateau duration, enabling precise dead-time control and reducing lamp flicker.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK65ZFP	650 V, 12 A, R_DS(on) = 0.38 Ω, Q_g = 65 nC, TO-220FP package (full-pack, no tab isolation)	Requires insulated mounting hardware; lower R_thJC = 0.75 °C/W but higher C_iss = 1300 pF	Preferred where compact footprint and slightly lower gate charge outweigh need for isolated tab
IXTH12N65X2	650 V, 12 A, R_DS(on) = 0.32 Ω, Q_g = 42 nC, TO-247AC package, enhanced body diode	Larger TO-247 footprint; superior Q_rr = 2.1 μC and t_rr = 180 ns for high-frequency ZVS	Selected when higher efficiency at >150 kHz or reduced diode loss in resonant topologies is critical

Compared with STP12NK65ZFP and IXTH12N65X2, SIHP12N65E-GE3 offers TO-220AB's isolated tab for simplified heatsinking, balanced FOM for mid-frequency SMPS, and proven UIS ruggedness - making it ideal for cost-sensitive, thermally constrained server and industrial PFC designs.

Availability

SIHP12N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHP12N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The E Series Power MOSFETs, including SIHP12N65E-GE3, were designed for high-voltage, medium-current switching in telecom, server, and renewable energy systems where low gate charge and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHP12N65E-GE3 at 100 °C case temperature?

The SIHP12N65E-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 12 A at 25 °C reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The linear derating factor is 1.4 W/°C beyond T_C = 100 °C.

Does SIHP12N65E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHP12N65E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 226 mJ under defined test conditions: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4 A. This rating is validated per JEDEC standards and confirms robustness against inductive switching stress without external protection components.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHP12N65E-GE3, and why does it matter?

The typical reverse recovery charge (Q_rr) of the SIHP12N65E-GE3 body diode is 3.8 μC at T_J = 25 °C, I_F = 6 A, dI/dt = 100 A/μs, and V_R = 25 V. This value directly impacts switching loss and EMI in half-bridge and synchronous rectifier topologies - lower Q_rr reduces diode tail current and associated voltage spikes, improving system efficiency and reliability.

Can SIHP12N65E-GE3 be used in place of logic-level gate drive MOSFETs?

No, SIHP12N65E-GE3 is not a logic-level device: its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but it is specified for full enhancement at V_GS = 10 V, and R_DS(on) is guaranteed only at that drive level. It requires a dedicated 10–15 V gate driver - unlike true logic-level MOSFETs rated for R_DS(on) at V_GS = 4.5 V or 5 V. Using 5 V drive would result in excessive conduction loss and thermal runaway.

What is the thermal resistance from junction to case (R_thJC) for SIHP12N65E-GE3, and how does it affect heatsink design?

The maximum junction-to-case thermal resistance (R_thJC) for SIHP12N65E-GE3 is 0.8 °C/W. This low value enables effective heat transfer from the die to the heatsink via the drain-connected metal tab. For a 156 W maximum power dissipation, this implies a 125 °C temperature rise from case to junction - so heatsink selection must maintain T_C ≤ 25 °C to keep T_J ≤ 150 °C under full load, assuming no additional interface resistance.

SIHP12N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1224 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP12N65E-GE3 FAQ

1.How can I place an order for SIHP12N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP12N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP12N65E-GE3 reliable?

The price and inventory of SIHP12N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP12N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP12N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP12N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP12N65E-GE3?

SIHP12N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP12N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP12N65E-GE3?

For technical support, including SIHP12N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP12N65E-GE3 requirements.

6.How does Aetrix verify that SIHP12N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP12N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP12N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP12N65E-GE3?

All SIHP12N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP12N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP12N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHP12N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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