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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP14N50D-E3

Name: SIHP14N50D-E3
Brand: Vishay Siliconix
SKU: SIHP14N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP14N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP14N50D-E3.pdf

Description:: MOSFET N-CH 500V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP14N50D-E3 from Vishay Siliconix is a 500 V, 14 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.4 Ω R_DS(on) at V_GS = 10 V, 58 nC total gate charge, and 56 mJ single-pulse avalanche energy-designed for high-efficiency SMPS in server and telecom power supplies.

For engineers reviewing the SIHP14N50D-E3 datasheet, SIHP14N50D-E3 pinout, SIHP14N50D-E3 application, or SIHP14N50D-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high body diode ruggedness, and validated UIS rating for reliable operation in hard-switched inductive loads.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low area-specific on-resistance and reduced input capacitance (C_iss = 1144 pF). Its gate threshold voltage (3.0–5.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.

The device integrates a fast-recovery body diode (t_rr = 319 ns, Q_rr = 3.0 μC) and is rated for linear-mode operation up to 150 °C junction temperature, with thermal resistance R_thJC = 0.6 °C/W supporting high-power dissipation in TO-220AB mounting configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients
R_DS(on) max @ 10 V	0.4 Ω - enables <1.96 W conduction loss at 7 A continuous drain current
Q_g max	58 nC - determines gate driver power requirement and switching speed trade-off
E_AS	56 mJ - guarantees safe unclamped inductive switching up to specified I_AS = 7 A
t_rr	319 ns - minimizes reverse recovery losses during synchronous rectification or freewheeling
R_thJC	0.6 °C/W - allows 208 W power dissipation with ≤125 °C case-to-ambient delta under heatsink conditions

Pinout & Package

Package: TO-220AB, through-hole, single-ended heat sink mounting, lead (Pb)-free and halogen-free per SiHP14N50D-E3 ordering code.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1144 pF defines Miller effect and drive strength needs
D (Drain)	High-side power terminal	Connected to DC bus or inductive load; electrically tied to metal tab for thermal path and EMI shielding
S (Source)	Reference node / return path	Common connection point for gate drive return, current sensing, and body diode cathode

Key Features

Feature	Design Value
Low Figure-of-Merit (R_DS(on) × Q_g)	23.2 Ω·nC - improves efficiency in high-frequency switch-mode topologies by balancing conduction and switching losses
Avalanche-rated (UIS)	56 mJ - eliminates need for external snubbers in flyback or forward converters with leakage inductance
High body diode ruggedness	Rated for repetitive ISD ≤ ID (14 A) - supports reliable freewheeling in motor drives without external diode
Fast switching performance	td(on) = 32 ns, tf = 52 ns - enables >200 kHz operation in telecom PSUs with minimal dead-time penalty

Applications

Server SMPS	Industrial Motor Drives
Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and server VRMs. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer across isolation boundary. Use Value: 500 V rating and 56 mJ E_AS ensure robustness against line surges and transformer leakage spikes without derating.	Use Scenario: Inverter leg switching in 0.5–2 kW variable-frequency AC drives. IC Role / Device Role / Timing Role: N-channel high-side/low-side switch in three-phase bridge topology. Use Value: Fast t_rr (319 ns) and low Q_rr (3.0 μC) reduce cross-conduction losses and EMI during PWM commutation.
Plasma/LCD TV Power	Battery Charger Systems
Use Scenario: PFC boost switch and main DC-DC converter in flat-panel display power boards. IC Role / Device Role / Timing Role: Critical high-efficiency switching element in continuous conduction mode (CCM) PFC stages. Use Value: Low R_DS(on) (0.4 Ω) and high I_D (14 A) support high-current, low-loss operation at 65–100 kHz switching frequencies.	Use Scenario: Isolated DC-DC stage in multi-kW EV on-board chargers and industrial battery systems. IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge or LLC resonant converters. Use Value: TO-220AB package with R_thJC = 0.6 °C/W enables direct heatsink mounting for stable thermal management under 100 % duty cycling.

Server SMPS

Industrial Motor Drives

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers and server VRMs.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer across isolation boundary.

Use Value: 500 V rating and 56 mJ E_AS ensure robustness against line surges and transformer leakage spikes without derating.

Use Scenario: Inverter leg switching in 0.5–2 kW variable-frequency AC drives.

IC Role / Device Role / Timing Role: N-channel high-side/low-side switch in three-phase bridge topology.

Use Value: Fast t_rr (319 ns) and low Q_rr (3.0 μC) reduce cross-conduction losses and EMI during PWM commutation.

Plasma/LCD TV Power

Battery Charger Systems

Use Scenario: PFC boost switch and main DC-DC converter in flat-panel display power boards.

IC Role / Device Role / Timing Role: Critical high-efficiency switching element in continuous conduction mode (CCM) PFC stages.

Use Value: Low R_DS(on) (0.4 Ω) and high I_D (14 A) support high-current, low-loss operation at 65–100 kHz switching frequencies.

Use Scenario: Isolated DC-DC stage in multi-kW EV on-board chargers and industrial battery systems.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge or LLC resonant converters.

Use Value: TO-220AB package with R_thJC = 0.6 °C/W enables direct heatsink mounting for stable thermal management under 100 % duty cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	R_DS(on) = 0.42 Ω, Q_g = 65 nC, E_AS = 50 mJ, TO-220FP package (shorter leads, lower L_s)	Higher gate charge increases driver loss; slightly lower avalanche rating reduces margin in high-L_leak designs	Preferable where space-constrained PCB layout demands shorter lead inductance
IRFP460LC	R_DS(on) = 0.27 Ω, Q_g = 140 nC, E_AS = 450 mJ, TO-247 package	Lower R_DS(on) improves conduction loss but higher Q_g demands stronger gate drive; larger package requires board rework	Preferred for ultra-high-reliability industrial UPS where avalanche endurance outweighs size and cost

Compared with STP14NK50ZFP and IRFP460LC, the SIHP14N50D-E3 delivers optimal balance of low gate charge, proven avalanche capability, and TO-220AB mechanical compatibility-making it ideal for cost-sensitive, high-volume telecom and consumer power supply designs requiring no PCB redesign.

Availability

SIHP14N50D-E3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and consumer display power systems requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHP14N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The D Series Power MOSFETs-including SIHP14N50D-E3-are engineered for high-voltage, medium-current switching in SMPS, motor control, and industrial power conversion, prioritizing ruggedness, low FOM, and avalanche survivability.

FAQ

What is the maximum continuous drain current rating for SIHP14N50D-E3 at 100 °C case temperature?

The SIHP14N50D-E3 has a maximum continuous drain current (I_D) of 9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within its 208 W power dissipation capability when properly heatsinked. The SIHP14N50D-E3 maintains stable R_DS(on) performance up to 150 °C junction temperature.

Does SIHP14N50D-E3 support logic-level gate drive?

No, the SIHP14N50D-E3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for full enhancement at V_GS = 10 V. It requires a dedicated 10 V gate driver-not 3.3 V or 5 V microcontroller outputs-to achieve its specified R_DS(on) of 0.4 Ω and optimal switching performance. The SIHP14N50D-E3 does not guarantee turn-on below 5 V.

What is the body diode reverse recovery charge (Q_rr) of SIHP14N50D-E3, and why does it matter?

The SIHP14N50D-E3 has a typical reverse recovery charge (Q_rr) of 3.0 μC at T_J = 25 °C, I_F = 7 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in hard-commutated topologies like flyback or half-bridge inverters. Lower Q_rr reduces diode tail current and associated voltage overshoot, making the SIHP14N50D-E3 suitable for high-frequency, high-efficiency designs where body diode conduction occurs regularly.

Is SIHP14N50D-E3 RoHS-compliant and halogen-free?

Yes, the SIHP14N50D-E3 is both RoHS-compliant and halogen-free, as indicated by the "-E3" suffix in its ordering code and confirmed in Vishay's material compliance documentation (Doc. #99912). It uses lead (Pb)-free terminations and meets JEDEC JS709B and IEC 61249-2-21 standards. The SIHP14N50D-E3 is distinct from the "-GE3" variant, which adds halogen-free packaging but shares the same electrical specs.

Can SIHP14N50D-E3 be used in linear (active) region operation?

Yes, the SIHP14N50D-E3 is rated for linear-mode operation, as evidenced by its Safe Operating Area (SOA) curve (Fig. 8), which includes DC and pulsed boundaries up to 150 °C. Its R_thJC = 0.6 °C/W and 208 W P_D rating support controlled dissipation in analog pass elements or electronic loads-but design must respect SOA limits at all V_DS/I_D combinations. The SIHP14N50D-E3 is not optimized for precision linear use but is qualified for limited-duty active regulation.

SIHP14N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1144 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP14N50D-E3 FAQ

1.How can I place an order for SIHP14N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP14N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP14N50D-E3 reliable?

The price and inventory of SIHP14N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP14N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHP14N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP14N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP14N50D-E3?

SIHP14N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP14N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP14N50D-E3?

For technical support, including SIHP14N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP14N50D-E3 requirements.

6.How does Aetrix verify that SIHP14N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP14N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP14N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHP14N50D-E3?

All SIHP14N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP14N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP14N50D-E3 part is unused and in its original packaging.

Return procedure for SIHP14N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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